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    10D4 DIODE Search Results

    10D4 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    10D4 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    1N538

    Abstract: 1n1085a AMERICAN MICROSEMICONDUCTOR 1N1079 1HV15K 1N1084 Thyr
    Text: American Microsemiconductor manufacturers of Diodes, Transistors, Thyr. 1 of 2 Home Part Number: 1N538 Online Store 1N538 Diodes Silic o n Re c t ifier Transistors Integrated Circuits Optoelectronics


    Original     		com/1n538 1N538 1N538 1n1085a AMERICAN MICROSEMICONDUCTOR 1N1079 1HV15K 1N1084 Thyr PDF

    CS518

    Abstract: No abstract text available
    Text: DS26518DK Octal T1/E1/J1 Transceiver Demo Kit Daughter Card www.maxim-ic.com FEATURES GENERAL DESCRIPTION The DS26518DK is an easy-to-use evaluation board for the DS26518 octal T1/E1/J1 transceiver. The DS26518DK is a stand-alone system. The board comes complete with a transceiver, transformers,


    Original     		DS26518DK DS26518DK DS26518 RS-232 DS26518 ds26528 TXENA518 CS518 PDF

    cs1m

    Abstract: 11d8 Schottky 16a8 k6n137 rb69 rb60 RECTIFIER rj45 extended vertical socket DS26518 11B8 dat518
    Text: DS26518DK Octal T1/E1/J1 Transceiver Demo Kit Daughter Card www.maxim-ic.com GENERAL DESCRIPTION FEATURES The DS26518DK is an easy-to-use evaluation board for the DS26518 octal T1/E1/J1 transceiver. The DS26518DK is a stand-alone system. The board comes complete with a transceiver, transformers,


    Original     		DS26518DK DS26518DK DS26518 RS-232 DS26518 DS26528DK02A0 ds26528 cs1m 11d8 Schottky 16a8 k6n137 rb69 rb60 RECTIFIER rj45 extended vertical socket 11B8 dat518 PDF

    11d8 Schottky

    Abstract: T1341 RB39 pdata 16a8 RB35 RB59 csr schematic usb to spi rj45 k6n137 RB40
    Text: DS26518DK Octal T1/E1/J1 Transceiver Demo Kit Daughter Card www.maxim-ic.com GENERAL DESCRIPTION FEATURES The DS26518DK is an easy-to-use evaluation board for the DS26518 octal T1/E1/J1 transceiver. The DS26518DK is a stand-alone system. The board comes complete with a transceiver, transformers,


    Original     		DS26518DK DS26518DK DS26518 RS-232 DS26518 DS26528DK02A0 ds26528 11d8 Schottky T1341 RB39 pdata 16a8 RB35 RB59 csr schematic usb to spi rj45 k6n137 RB40 PDF

    DIODE 20B2

    Abstract: CIS10J270NC ELM7S08WS BA41-0071 D5092 28B3 KBC3_SUSPWR RS600ME 218s6ecla21fg K45 S2
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. D Table of Contents FIRENZE2-R Sheet 1. COVER Sheet 2 - 7. DIAGRAM Block/Power & ANNOTATIONS


    Original     		533/667MHz) RS600ME SB600 BA41-00714A BA41-00715A 022nF 027nF 047nF 0033nF 018nF DIODE 20B2 CIS10J270NC ELM7S08WS BA41-0071 D5092 28B3 KBC3_SUSPWR RS600ME 218s6ecla21fg K45 S2 PDF

    rtl8103

    Abstract: mec1308 tps51620 N10M-GE BA41-01100A h3 379 RTL8103EL ALC269 AON6912L adc633
    Text: 4 3 1 2 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. D QingDao_ULCPC g n l u a s i t m n a e S fid n o


    Original     		BA41-01100A BA41-01097A BA41-01098A rtl8103 mec1308 tps51620 N10M-GE h3 379 RTL8103EL ALC269 AON6912L adc633 PDF

    ICS951461

    Abstract: CQ533 218s6ecla21fg R5538 by503 TP2205 TP2136 b536 AF45 DIODE SMD SS338A
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. D D Table of Contents 1. COVER 2-7. DIAGRAM & ANNOTATION


    Original     		RS600M SB600 BA41-XXXXXA RS600 REV500 TP2123 TP2124 TP2125 ICS951461 CQ533 218s6ecla21fg R5538 by503 TP2205 TP2136 b536 AF45 DIODE SMD SS338A PDF

    SS338A

    Abstract: Diode smd BD27 BD2430 cq521 18b2 diode BE513 3b506 HAINAN2 TP2041 B538
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. D D Table of Contents 1. COVER 2-7. DIAGRAM & ANNOTATION


    Original     		RS600M SB600 BA41-XXXXXA RS600 REV500 TP2165 TP2123 TP2124 SS338A Diode smd BD27 BD2430 cq521 18b2 diode BE513 3b506 HAINAN2 TP2041 B538 PDF

    BA41-00695A

    Abstract: TP1274 CONN-50P-FPC Socket AM2 samsung 30 pin lvds diagram 25a44 SMD AC P27 CY28447 samsung electronics ba41 GND103
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents D Sheet 1. COVER Sheet 2 - 7. DIAGRAM Block/Power & ANNOTATIONS


    Original     		BA41-00694A BA41-00695A YONAH667 047nF RHU002N06 12-C4 TP1274 CONN-50P-FPC Socket AM2 samsung 30 pin lvds diagram 25a44 SMD AC P27 CY28447 samsung electronics ba41 GND103 PDF

    TP2788

    Abstract: TP2801 l xd 402 HAINAN3 mx25l8005m2c-15g NH82801HBM timer 8254 circuit LE88CLPM SI2315BDS-T1 20b1 diode
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. D D Table of Contents 1. COVER 2-7. DIAGRAM & ANNOTATION


    Original     		BA41-00844A BA41-00845A TP2074 TP2075 TP2076 TP2077 TP2735 TP2736 TP2737 TP2754 TP2788 TP2801 l xd 402 HAINAN3 mx25l8005m2c-15g NH82801HBM timer 8254 circuit LE88CLPM SI2315BDS-T1 20b1 diode PDF

    BA41-00808A

    Abstract: BA41-00807A samsung schematic ICS95461 TP2136 tp2116 hainan3 HU-1M2012-121JT BA41-00809A 2u42
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. D D Table of Contents HAINAN3_INT C CPU : Chip Set :


    Original     		RS600M SB600 BA41-00807A BA41-00808A RS600 TP2656 REV500 TP2660 samsung schematic ICS95461 TP2136 tp2116 hainan3 HU-1M2012-121JT BA41-00809A 2u42 PDF

    B30C300

    Abstract: 29A4 samsung electronics 10K 34C1 TP678 gfx E3 diode diode 39b2 TP730 NC7SZ175P6X_NL HDR-10P-SMD
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents Sheet 1. COVER Sheet 2 - 7. DIAGRAM Block/Power & ANNOTATIONS


    Original     		BA41-00574A YONAH667 Sheet18. Sheet19. 047nF RHU002N06 12-C4 B30C300 29A4 samsung electronics 10K 34C1 TP678 gfx E3 diode diode 39b2 TP730 NC7SZ175P6X_NL HDR-10P-SMD PDF

    ST T4 D560

    Abstract: ST D560 T4 ST 1803 DHI B-566 u574 j5512 46d1 BA09-00009A SAMSUNG GDDR3 54B4
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents CICHLID 3 CPU :Intel Yonah 533/667 Merom


    Original     		YONAH667 Sheet18. Sheet19. Sheet20 Sheet24. Sheet25 Sheet29. Sheet30 Sheet32. Sheet33. ST T4 D560 ST D560 T4 ST 1803 DHI B-566 u574 j5512 46d1 BA09-00009A SAMSUNG GDDR3 54B4 PDF

    16D 22 varistor

    Abstract: ERZVA9D270 ERZVA9V220 ERZVA7D680 znr k 330 ERZV14V680 ERZVA9D470 ERZV14V470 ERZV14D470 ERZVA7V330
    Text: ÒZNRÓ Transient/Surge Absorbers, ÒSeries VÓ Type D ÒZNR Ó Transient/Surge Absorbers (Low Voltage Rating) V D Series: Type: ÒZNR Ó Transient/Surge Absorber, Series V is newly released through our continued research in ceramic material composition of ZnO varistor and manufacturing


    Original     		ERZV05V220CS ERZV07V220CS ERZV10V220CS ERZV14V220CS ERZV05V270CS ERZV07V270CS ERZV10V270CS ERZV14V270CS ERZV05V330CS ERZV07V330CS 16D 22 varistor ERZVA9D270 ERZVA9V220 ERZVA7D680 znr k 330 ERZV14V680 ERZVA9D470 ERZV14V470 ERZV14D470 ERZVA7V330 PDF

    2SD618

    Abstract: MOTHERBOARD INTEL G31 ICH7 SCHEMATIC DIAGRAM BC615 DIODE 20B2 samsung u252 20b1 diode TP-107-02 SAMSUNG R60 plus S3F94 SLB9635TT1.2
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents SEDONA_plus Sheet 1. COVER Sheet 2 - 7. DIAGRAM Block/Power & ANNOTATIONS


    Original     		Yonah667 BA41-00697A CALISTP11574 TP11575 TP11578 TP11579 TP11516 TP11517 TP11520 2SD618 MOTHERBOARD INTEL G31 ICH7 SCHEMATIC DIAGRAM BC615 DIODE 20B2 samsung u252 20b1 diode TP-107-02 SAMSUNG R60 plus S3F94 SLB9635TT1.2 PDF

    BA41-00809A

    Abstract: HAINAN3_EXT BA41 HAINAN3 BA41-00810A 218s6ecla21fg RS600ME smd diode code ak12 SI2315BDS-T1 B502 samsung p28
    Text: 4 3 1 2 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. D D Table of Contents HAINAN3_EXT C 1. COVER 2-7. DIAGRAM & ANNOTATION


    Original     		RS600 SB600 BA41-00809A BA41-00810A TP2123 TP2124 TP2125 TP2062 TP2063 HAINAN3_EXT BA41 HAINAN3 218s6ecla21fg RS600ME smd diode code ak12 SI2315BDS-T1 B502 samsung p28 PDF

    10D4 DIODE

    Abstract: 10d4
    Text: SILICON RECTIFIER DIODE IODI— IODIO i a /i oo ~ i o o o v FEATURES • Miniature Size 0 Low Forward Voltage Drop • Low Reverse Leakage Current • High Surge Capability ° 52mm Inside Tape Spacing Package Available MAXIMUM RATINGS >vs TYPE Voltage Rating


    OCR Scan     		10D10 bbl5123 DDD2314 10D4 DIODE 10d4 PDF

    10D10 diode

    Abstract: 10d2 diode 10D4 DIODE 10D10 10D4 DIODE 10D2
    Text: IODI-IODIO ÌA/IOO— IOOOV SILICON RECTIFIER DIODE FEA TU R ES » Miniature Size » Low Forward Voltage Drop ° Low Reverse Leakage Current ° High Surge Capability ° 52mm Inside Tape Spacing Package Available MAXIMUM RATINGS \TYPE Voltage Rating Symbol'''^


    OCR Scan     		10D10 10D10 diode 10d2 diode 10D4 DIODE 10D4 DIODE 10D2 PDF

    10D10 diode

    Abstract: 10D10 10d2 diode 10D4 T3B diode 10D6 diode 10dl 10D2 10D8 10D4 DIODE
    Text: SILICON RECTIFIER DIODE IODI— IODIO ia /ioo ~ iooov FEATUR ES • Miniature Size 0 Low Forward Voltage Drop ° Low Reverse Leakage Current • High Surge Capability ° 52mm Inside Tape Spacing Package Available MAXIMUM R A T IN G S >\T¥PE Voltage Rating


    OCR Scan     		10D10 bbl51EB 000E314 10D10 diode 10d2 diode 10D4 T3B diode 10D6 diode 10dl 10D2 10D8 10D4 DIODE PDF

    11505A

    Abstract: diode zener 1n4002 10D10 diode 11708a 30S4 DIODE ir 10d10 diode 30S10 diode DIODE 10D1 34301a IR 10D4
    Text: Sem iconductors International Rectifier Zener Diodes & Silicon Rectifiers 10 W a ffs a f 95‘C B a s e - 5 % toteran ce co n tin u e d RE F E R E N C E T A B L E Max. D C Zener Current Zener Voltage Type Stock No. 1028.2T5 10Z9.1T5 10Z10T5 10Z11T5 10Z12T5


    OCR Scan     		11701D 11702B 10Z10T5 It703X 10Z11T5 11704R 10Z12T5 11705G 10Z13T5 11706E 11505A diode zener 1n4002 10D10 diode 11708a 30S4 DIODE ir 10d10 diode 30S10 diode DIODE 10D1 34301a IR 10D4 PDF

    1n4816

    Abstract: 1N5054 1N5052 PD2004C 10D10 1n5053
    Text: INTERNATI ONAL RECTIFIER 4855452 SS d ËTJ 4ÖSS4S5 D D D 4 IiOb D 55C 04906 INTERNATIONAL R EC TIFIER Data Sheet No. PD-2.004C INTERNATIONAL RECTIFIER I O R 1N4816,1N5052,1QD, SOD SERIES 1.5 and 2 .0 Amp Molded Silicon Rectifier Diodes Description/Features


    OCR Scan     		1N4816 1N5052 1N4816-22 1N5052-54 1N5054 PD2004C 10D10 1n5053 PDF

    1N4822

    Abstract: 1N4820 1N5054 IR 20D2 1N4816 10d05 IR 10D4 IR 10D 7 7510D1 1N4817
    Text: INTERNATIONAL RECTIFIER 4855452 SS INTERNATIONAL DE~| 4ÖSS4S5 DDD4clDt. 55C RECTIFIER 04906 D Data Sheet No. PD-2.004C IN T E R N A T IO N A L R E C T IF IE R IÖR <11X14816,1IM5052S10IDSSOD SERIES 1.5 and 8 .0 Amp Molded Silicon R ectifier Diodes Description/Features


    OCR Scan     		DD04clDb 1IM4816, 1N4816 1N5052 1N4816-22 1N5052-54 1N4822 1N4820 1N5054 IR 20D2 10d05 IR 10D4 IR 10D 7 7510D1 1N4817 PDF

    motorola diode cross reference

    Abstract: replacement UF5402 1m5819 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement"
    Text: CROSS REFERENCE Schottky Barrier Diode -Single MOTOROLA IR 1N5817 SANKEN G I 1N5817 AK03 AK04 AK06 AK09 EK03 EK04 EK06 EK09 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 MBR330 MBR340 MBR350 MBR360 MBR390 MBR3100 MBRS120LT3 MBRS130LT3 MBRS130T3 MBRS140T3 MBRS190T3


    OCR Scan     		1N5817 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 11DQ03 11DQ04 motorola diode cross reference replacement UF5402 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement" PDF

    F10P100

    Abstract: 10EF1 12MF30 diode f40c 60KQ10B 30MF40 F10KF20B 12MF40 C16P04Q C25P40F
    Text: SELECTORS GUIDE S c h o ttk y B a rrie r Diode-Single C ase Style Io A V FM (V) 1.0 0.45 30 11EQS03L 52 0.45 20 ♦ 11EQS02L 50 0.55 30 40 ♦ 11EQ03 11EQ04 60 0.58 50 60 ♦ 11EQ05 11EQ06 62 0.85 90 100 ♦ 11EQ09 11EQ10 64 0.55 30 40 ♦ 11EQS03 11EQS04


    OCR Scan     		11EQS03L 11EQS02L 11EQ03 11EQ04 11EQ05 11EQ06 11EQ09 11EQ10 11EQS03 11EQS04 F10P100 10EF1 12MF30 diode f40c 60KQ10B 30MF40 F10KF20B 12MF40 C16P04Q C25P40F PDF