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    10B104 Search Results

    10B104 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    RFC1010B-104KE Coilcraft Inc General Purpose Inductor, 100uH, 10%, Ferrite-Core Visit Coilcraft Inc
    RFC0810B-104KE Coilcraft Inc General Purpose Inductor, 100uH, 10%, Ferrite-Core Visit Coilcraft Inc
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    10B104 Price and Stock

    Samsung Electro-Mechanics CL10B104KA8NNNC

    CAP CER 0.1UF 25V X7R 0603
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CL10B104KA8NNNC Reel 667,439 4,000
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    Mouser Electronics CL10B104KA8NNNC 788,346
    • 1 $0.1
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    • 10000 $0.004
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    Avnet Asia CL10B104KA8NNNC 20,000 16 Weeks 4,000
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    • 10000 $0.00525
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    Samsung Electro-Mechanics CL10B104KO8NFNC

    CAP CER 0.1UF 16V X7R 0603
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CL10B104KO8NFNC Reel 312,000 4,000
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    Avnet Asia CL10B104KO8NFNC 28 Weeks 4,000
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    Samsung Electro-Mechanics CL10B104JB8NNNC

    CAP CER 0.1UF 50V X7R 0603
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CL10B104JB8NNNC Digi-Reel 302,654 1
    • 1 $0.1
    • 10 $0.037
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    CL10B104JB8NNNC Cut Tape 302,654 1
    • 1 $0.1
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    • 100 $0.0165
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    Avnet Americas CL10B104JB8NNNC Reel 132,000 20 Weeks 4,000
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    Samsung Electro-Mechanics CL10B104KO8NNWC

    CAP CER 0.1UF 16V X7R 0603
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CL10B104KO8NNWC Cut Tape 203,864 1
    • 1 $0.1
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    CL10B104KO8NNWC Digi-Reel 203,864 1
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    CL10B104KO8NNWC Reel 200,000 4,000
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    Avnet Americas CL10B104KO8NNWC Reel 184,000 20 Weeks 4,000
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    Samsung Electro-Mechanics CL10B104KB8WPND

    CAP CER 0.1UF 50V X7R 0603
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    DigiKey CL10B104KB8WPND Digi-Reel 167,401 1
    • 1 $0.1
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    CL10B104KB8WPND Cut Tape 167,401 1
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    • 100 $0.0249
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    CL10B104KB8WPND Reel 150,000 10,000
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    Find more 10B104 price and stock on Findchips.com

    10B104 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MCR03J102

    Abstract: MCR03*J102 MCH185A150J MCR03*J102 resistor SGA-8343 CL10B104KONC sga8343 samsung bluetooth sige an-061 sga8343z
    Text: AN RFMD APPLICATION NOTE SGA-8343 GPS Application Circuits RFMD Worldwide Applications Design Application Note - AN-061 Abstract RFMD’s SGA-8343 is a high performance SiGe amplifier designed for operation from DC to 6GHz. This application note illustrates application circuits for GPS Global Positioning System frequency band (1575MHz). The first application circuit is optimized for noise performance; the second one is optimized for input return loss. Introduction The application circuits were


    Original     		PDF SGA-8343 AN-061 1575MHz) MCR03J102 MCR03*J102 MCH185A150J MCR03*J102 resistor CL10B104KONC sga8343 samsung bluetooth sige an-061 sga8343z

    SGA8343Z

    Abstract: MCR03*J102 SGA8343ZSR SGA-8343Z EVB1 1608-FS3N9S lot code RFMD MCH185A150J MCR03J5R1 toko 10k series
    Text: SGA8343Z SGA8343ZLow Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA8343Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to


    Original     		PDF SGA8343Z SGA8343ZLow OT-343 SGA8343Z DS100909 SGA8343Z-EVB4 1575MHz MCR03*J102 SGA8343ZSR SGA-8343Z EVB1 1608-FS3N9S lot code RFMD MCH185A150J MCR03J5R1 toko 10k series

    Untitled

    Abstract: No abstract text available
    Text: SGA8343Z SGA8343ZLow Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA8343Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to


    Original     		PDF SGA8343Z SGA8343ZLow OT-343 SGA8343Z DS110620 SGA8343Z-EVB4 1575MHz

    SGA-8343Z

    Abstract: samsung cl SGA8343Z SOT343 lna MICROWAVE DEVICES GaAs pHEMT LOW SOT-343
    Text: SGA8343Z SGA8343ZLow Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA8343Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to


    Original     		PDF SGA8343ZLow SGA8343Z OT-343 SGA8343Z DS110205 SGA8343Z-EVB4 1575MHz SGA-8343Z samsung cl SOT343 lna MICROWAVE DEVICES GaAs pHEMT LOW SOT-343

    SGA8343z

    Abstract: SGA-8343Z CL10B104K MCR03*J100 MCR03J242 MCR03J620 MCR03J SOT343 lna ROHM TRACE CODE ROHM trace code of lot
    Text: SGA8343Z SGA8343ZLow Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA8343Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to


    Original     		PDF SGA8343ZLow SGA8343Z OT-343 SGA8343Z DS110620 SGA8343Z-EVB4 1575MHz SGA-8343Z CL10B104K MCR03*J100 MCR03J242 MCR03J620 MCR03J SOT343 lna ROHM TRACE CODE ROHM trace code of lot

    samsung bluetooth

    Abstract: SGA8343Z SGA-8343 MCR03*J102 CL10B104KONC SGA-8343Z 8343
    Text: SGA-8343 Z SGA-8343(Z) Low Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA-8343 is a high performance Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) designed for operation from DC to


    Original     		PDF SGA-8343 OT-343 SGA8343ZPCK-EVB2 SGA8343ZPCK-EVB3 SGA8343ZPCK-EVB4 DS100111 samsung bluetooth SGA8343Z MCR03*J102 CL10B104KONC SGA-8343Z 8343

    FEPROM

    Abstract: YL41 10B60 LM 10841 7v71 10B28 U131-1-2
    Text: PRELIM INARY VF1 FPGA Family B EY O N D P ER F O R M A N C E FEATURES AND BENEFITS ♦ The industry’s first Variable-Grain-Architecture enables high-density, high-performance designs for a wide range of applications — Architecture adapts to logic to enable synthesis-friendly, high-performance designs


    OCR Scan     		PDF leng0B96 IOB97 IOB98 IOB99 10B100 10B101 IOB102 10B103 10B104 10B105 FEPROM YL41 10B60 LM 10841 7v71 10B28 U131-1-2