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    10B10 Search Results

    10B10 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    RFC1010B-106KE Coilcraft Inc General Purpose Inductor, 10000uH, 10%, Ferrite-Core Visit Coilcraft Inc
    RFC1010B-104KE Coilcraft Inc General Purpose Inductor, 100uH, 10%, Ferrite-Core Visit Coilcraft Inc
    RFC0810B-105KE Coilcraft Inc General Purpose Inductor, 1000uH, 10%, 1 Element, Ferrite-Core, RADIAL LEADED Visit Coilcraft Inc
    RFC1010B-105KE Coilcraft Inc General Purpose Inductor, 1000uH, 10%, Ferrite-Core Visit Coilcraft Inc
    RFC0810B-106KE Coilcraft Inc General Purpose Inductor, 10000uH, 10%, Ferrite-Core Visit Coilcraft Inc
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    Samsung Electro-Mechanics CL10B102KB8WPJC

    CAP CER 1000PF 50V X7R 0603
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    DigiKey CL10B102KB8WPJC Reel 152,000 4,000
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    Samsung Electro-Mechanics CL10B103KB8NNNL

    CAP CER 10000PF 50V X7R 0603
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    DigiKey CL10B103KB8NNNL Reel 120,000 15,000
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    Avnet Americas CL10B103KB8NNNL Reel 2,550,000 20 Weeks 15,000
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    Vyrian CL10B103KB8NNNL 517,994
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    Samsung Electro-Mechanics CL10B104KA8NNWC

    CAP CER 0.1UF 25V X7R 0603
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    DigiKey CL10B104KA8NNWC Digi-Reel 103,046 1
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    CL10B104KA8NNWC Cut Tape 103,046 1
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    CL10B104KA8NNWC Reel 100,000 4,000
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    Samsung Electro-Mechanics CL10B102KC8NNND

    CAP CER 1000PF 100V X7R 0603
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    DigiKey CL10B102KC8NNND Cut Tape 94,750 1
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    CL10B102KC8NNND Digi-Reel 94,750 1
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    CL10B102KC8NNND Reel 90,000 10,000
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    Samsung Electro-Mechanics CL10B105KA8NNNL

    CAP CER 1UF 25V X7R 0603
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    DigiKey CL10B105KA8NNNL Cut Tape 76,280 1
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    Vyrian CL10B105KA8NNNL 311,649
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    Find more 10B10 price and stock on Findchips.com

    10B10 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    10B10 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    10B-100A IC Sensors TO-8 Series Pressure Sensor Selection Guide, PC Board Mountable Scan PDF
    10B-100D IC Sensors TO-8 Series Pressure Sensor Selection Guide, PC Board Mountable Scan PDF
    10B-100G IC Sensors TO-8 Series Pressure Sensor Selection Guide, PC Board Mountable Scan PDF
    10B1051 Unknown GE Transistor Specifications Scan PDF
    10B1055 Unknown GE Transistor Specifications Scan PDF
    10B10T Unknown Catalog Scans - Shortform Datasheet Scan PDF

    10B10 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 10B10 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current1.3 @Temp (øC) (Test Condition)50’ V(RRM)(V) Rep.Pk.Rev. Voltage1.0k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.40 V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)3.0 @Temp. (øC) (Test Condition)25õ


    Original     		10B10 Current10u Current500u PDF

    10B10T

    Abstract: No abstract text available
    Text: 10B10T Diodes Single-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current10 @Temp (øC) (Test Condition)50 V(RRM)(V) Rep.Pk.Rev. Voltage100 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.350 V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition)


    Original     		10B10T Current10 Voltage100 PDF

    Untitled

    Abstract: No abstract text available
    Text: HL-LC002H399W-10B10C8 White Description Features Dimension:22mmx18mm×2.80mm The White source color devices are made with GaN on Single color. sapphire White Light Emitting Diode. Emitting Color:White Easy installation with screws. Package:100pcs/white box.


    Original     		HL-LC002H399W-10B10C8 100pcs/white Feb/20/2012 100um. PDF

    Untitled

    Abstract: No abstract text available
    Text: SOLID ELECTROLYTIC CAPACITORS WITH ORGANIC SEMICONDUCTOR @105C, 1000 hours @Miniaturized series of FA series ?SPECIFICATIONS Items Performance Requirements Category Temperature Range –55 to +105C Rated Voltage Range Rated Capacitance Range Tolerance on Rated


    Original     		20Vdc 470MF 120Hz) 1000hours 20FS150M 10B10 6FS220M 100kHz PDF

    2R5FP1200M

    Abstract: 10FP470M 6FP220MA 6FP390M 4FP330M 4FP560M 4FP820M 6FP220M capacitor 200mF
    Text: SOLID ELECTROLYTIC CAPACITORS WITH ORGANIC SEMICONDUCTOR @105C, 1000 hours @Higher capacitance and lower ESR @Suitable for the backup capacitor of the power supply circuit of CPU ?SPECIFICATIONS Items Performance Requirements Category Temperature Range –55 to +105C


    Original     		20Vdc 200MF 120Hz) 100kHz 300kHz 100kHz, 10B10 2R5FP1200M 10FP470M 6FP220MA 6FP390M 4FP330M 4FP560M 4FP820M 6FP220M capacitor 200mF PDF

    BW35

    Abstract: No abstract text available
    Text: ADVANCE‡ 4 MEG X 8, 4 MEG X 9, 2 MEG X 18, 1 MEG X 36 1.8V VDD, HSTL, DDRIIb4 SRAM 36Mb DDRII CIO SRAM 4-WORD BURST MT57W4MH8J MT57W4MH9J MT57W2MH18J MT57W1MH36J FEATURES • • • • • • • • • • • • • • • Figure 1 165-Ball FBGA


    Original     		MT57W1MH36J BW35 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY‡ 2 MEG X 8, 1 MEG X 18, 512K X 36 1.8V VDD, HSTL, DDR SIO SRAM 18Mb DDR SIO SRAM 2-WORD BURST MT57W2MH8C MT57W1MH18C MT57W512H36C FEATURES • • • • • • • • • • • • • • • • • • DLL circuitry for accurate output data placement


    Original     		MT57W1MH18C PDF

    2N773

    Abstract: U6 em BC127 BC199B BFY47 TF252
    Text: SYMBOLS & CODES EXPLAINED IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 2 MEG X 8, 1 MEG X 18, 512K X 36 1.8V VDD, HSTL, DDRIIb2 SRAM 18Mb DDRII CIO SRAM 2-Word Burst MT57W2MH8B MT57W1MH18B MT57W512H36B FEATURES • • • • • • • • • • • • • • • • DLL circuitry for accurate output data placement Pipelined, double-data rate operation


    Original     		PDF

    6CS3

    Abstract: Infrared Receiver sensor HD6432631 HD6432632 HD6432633 HD64F2633 HD64F2633R 433 transmitter, pcb layout master guide st semiconductor ERN 1387
    Text: To all our customers Information regarding change of names mentioned within this document, to Renesas Technology Corp. On April 1st 2003 the following semiconductor operations were transferred to Renesas Technology Corporation: operations covering microcomputer, logic,


    Original     		FP-128B FP-128B H8S/2633 H8S/2633R H8S/2695 6CS3 Infrared Receiver sensor HD6432631 HD6432632 HD6432633 HD64F2633 HD64F2633R 433 transmitter, pcb layout master guide st semiconductor ERN 1387 PDF

    Untitled

    Abstract: No abstract text available
    Text: 3714 Kinnear Place Saskatoon, SK Canada S7P 0A6 Ph: 306 373-5505 Fx: (306) 374-2245 www.littelfuse.com/relayscontrols SE-701 MANUAL GROUND-FAULT MONITOR Revision 10-C-072414 Copyright 2014 by Littelfuse Startco All rights reserved. Document Number: PM-1040-EN


    Original     		SE-701 10-C-072414 PM-1040-EN 10-B-102113 EFCT-26 SE-CS30-26. PDF

    rt930H

    Abstract: BF229 2N2935 11G702 2N2935 pnp BC127 BC198 10D701 2N701 BFY47
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		PMT024 15Om0 rt930H BF229 2N2935 11G702 2N2935 pnp BC127 BC198 10D701 2N701 BFY47 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2 MEG X 8, 1 MEG X 18, 512K X 36 1.8V VDD, HSTL, DDR SIO SRAM 18Mb DDR SIO SRAM 2-WORD BURST MT57W2MH8C MT57W1MH18C MT57W512H36C FEATURES • • • • • • • • • • • • • • • • • • DLL circuitry for accurate output data placement


    Original     		MT57W1MH18C PDF

    4FB3

    Abstract: 4Fb390M
    Text: SOLID ELECTROLYTIC CAPACITORS WITH ORGANIC SEMICONDUCTOR @105C, 1000 hours @Larger capacitance than FP series @Low ESR same as FP series @For VRM and DC-DC converter ?SPECIFICATIONS Items Performance Requirements Category Temperature Range –55 to +105C Rated Voltage Range


    Original     		20Vdc 200MF 100Hz) 1000hours 10B10 100kHz 4FB3 4Fb390M PDF

    sanyo Solid Capacitor

    Abstract: No abstract text available
    Text: SOLID ELECTROLYTIC CAPACITORS WITH ORGANIC SEMICONDUCTOR @105C, 1000 hrs. @Higher capacitance and lower ESR. @Suitable for the backup capacitor of the power supply circuit of CPU. ?SPECIFICATIONS No. Items Performance requirements 1 Category temperature range


    Original     		20Vdc Shal10B5 10B10 100kHz 300kHz sanyo Solid Capacitor PDF

    LM3900 VCO

    Abstract: 10b2 zener diode zener 10B2 quad comparator LM3900 mixer lm3900 staircase waveform Zener diode 10b3 audio mixer ic lm3900 T1EB 953a pnp
    Text: National Semiconductor Application Note 72 September 1972 PREFACE With all the existing literature on ‘‘how to apply op amps’’ why should another application note be produced on this subject There are two answers to this question 1 the LM3900 operates in quite an unusual manner compared to a conventional op


    Original     		LM3900 LM3900 VCO 10b2 zener diode zener 10B2 quad comparator LM3900 mixer lm3900 staircase waveform Zener diode 10b3 audio mixer ic lm3900 T1EB 953a pnp PDF

    MCR03J102

    Abstract: MCR03*J102 MCH185A150J MCR03*J102 resistor SGA-8343 CL10B104KONC sga8343 samsung bluetooth sige an-061 sga8343z
    Text: AN RFMD APPLICATION NOTE SGA-8343 GPS Application Circuits RFMD Worldwide Applications Design Application Note - AN-061 Abstract RFMD’s SGA-8343 is a high performance SiGe amplifier designed for operation from DC to 6GHz. This application note illustrates application circuits for GPS Global Positioning System frequency band (1575MHz). The first application circuit is optimized for noise performance; the second one is optimized for input return loss. Introduction The application circuits were


    Original     		SGA-8343 AN-061 1575MHz) MCR03J102 MCR03*J102 MCH185A150J MCR03*J102 resistor CL10B104KONC sga8343 samsung bluetooth sige an-061 sga8343z PDF

    cq 721

    Abstract: am26ls31 27LS00 TRANSISTOR SUBSTITUTION Amdasm am2911pc 25S558 STK 025 power amplifier GE semiconductor data handbook am29811adc-b
    Text: í i í i í i n z ta a a a a a a a a a a a r n a a a a a a a a a a a a a i: 33a a a a a a n a a a a a ; a a a a a a a a n a a iia a r r ia a a a a a n a a iia a a r l a n g a s í i í i í i * i¿ w n r w a s a jn sü n n a n a n n n n íiíi íiíiíi n n s n n n


    OCR Scan     		F-28-2 F-42-1 F-48-2 cq 721 am26ls31 27LS00 TRANSISTOR SUBSTITUTION Amdasm am2911pc 25S558 STK 025 power amplifier GE semiconductor data handbook am29811adc-b PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE‡ 2 MEG X 8, 1 MEG X 18, 512K X 36 1.8V VDD, HSTL, DDRIIb2 SRAM 18Mb DDRII CIO SRAM 2-Word Burst MT57W2MH8B MT57W1MH18B MT57W512H36B FEATURES • DLL circuitry for wide-output, data valid window, and future frequency scaling • Pipelined, double-data rate operation


    Original     		MT57W2MH8B MT57W1MH18B MT57W512H36B PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE‡ 2 MEG X 8, 1 MEG X 18, 512K X 36 1.8V VDD, HSTL, DDRIIb4 SRAM 18Mb DDRII CIO SRAM 4-WORD BURST MT57W2MH8J MT57W1MH18J MT57W512H36J FEATURES • DLL circuitry for wide-output, data valid window, and future frequency scaling • Pipelined double data rate operation


    Original     		MT57W2MH8J MT57W1MH18J MT57W512H36J MT57W1MH18J PDF

    VN01 016 0002 2

    Abstract: TN01 016 0011 1 PA66 - GF 25 relay
    Text: Amphenol Amphenol-Tuchel Electronics GmbH heavy|mate Heavy Duty Connectors www.industrial-amphenol.com Note from the CEO Ladies and Gentlemen, For over 75 years Amphenol has enjoyed success as the interconnection technology provider of choice to industry-leading companies around the world. One of our key strategic areas of focus has been and is the Industrial market. Our organization works with


    Original     		C1023 VN01 016 0002 2 TN01 016 0011 1 PA66 - GF 25 relay PDF

    DG11 Transistor

    Abstract: fq13 FQ06 Devlin Electronics pin diagram for IC cd 1619 cp dB06 diode FQ11 fQ-17 ML87V2301 FD13
    Text: OKI Semiconductor ML87V2301 FEDL87V2301-01 Issue Date: Jan. 15, 2003 Scan Converter for FPD-TV GENERAL DESCRIPTION The ML87V2301 is an interlace/progressive I/P conversion and resolution conversion IC developed for flat panel displays and CRT television sets.


    Original     		ML87V2301 FEDL87V2301-01 ML87V2301 1125i, 1250i) ML87V2301. DG11 Transistor fq13 FQ06 Devlin Electronics pin diagram for IC cd 1619 cp dB06 diode FQ11 fQ-17 FD13 PDF

    MT57W1MH18C

    Abstract: MT57W2MH8C MT57W512H36C
    Text: ADVANCE‡ 2 MEG X 8, 1 MEG X 18, 512K X 36 1.8V VDD, HSTL, DDR SIO SRAM 18Mb DDR SIO SRAM 2-WORD BURST MT57W2MH8C MT57W1MH18C MT57W512H36C FEATURES • DLL circuitry for wide-output, data valid window, and future frequency scaling • Separate independent read and write data ports


    Original     		MT57W2MH8C MT57W1MH18C MT57W512H36C MT57W1MH18C MT57W2MH8C MT57W512H36C PDF

    Untitled

    Abstract: No abstract text available
    Text: SOLID ELECTROLYTIC CAPACITORS WITH ORGANIC SEMICONDUCTOR @105C, 5000 hours @Long life and high reliability @Suitable for a industrial usage ?SPECIFICATIONS Items Performance Requirements Category Temperature Range –55 to +105C Rated Voltage Range Rated Capacitance Range


    Original     		25Vdc 330MF 120Hz) 25FH15M 10B10 100kHz 300kHz 100kHz, PDF