10A60 Search Results

10A60D

Abstract: 20A60 10A60 6B10A60D single phase igbt based inverter 200 amps circuit
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Hybrid Power Module M H PM 6B 10A60D M H PM 6B 20A 60D Integrated Power Stage for 230 VAC Motor Drives Motorola Preferred Devices These VersaPower modules integrate a 3-phase inverter in a single convenient package. They are designed for 1.0 and 2.0 hp

10A60

Abstract: FR202 10A10 10A05 10A100 10A20 10A40 10A80 GPA801 GPA802
Contextual Info: LEADED THRU-HOLE General Purpose & Fast Recovery Rectifiers GENERAL PURPOSE RECTIFIERS (Including Glass Passivated, use G suffix) RF Cross Max Avg. Peak Peak Fwd Surge Max Forward Max Reverse Part Number Reference Rectified Inverse Current @ 8.3ms Voltage @ 25°C Current @ 25°C

20A60

Abstract: RQ 300 W
Contextual Info: MOTOROLA Order this document by MHPM6B1OA6OD/D SEMICONDUCTOR TECHNICAL DATA Preliminary Data Sheet M HPM 10A60D M H PM 6B20A60D H y b rid P o w e r M o d u le Motorola Preferred Devices Integrated Power Stage for 230 VAC Motor Drives 10, 20 AMP, 600 V HYBRID POWER MODULES

10A60

Abstract: MHPM6B20A60D MHPM6BIOA60D
Contextual Info: MOTOROLA SEMICONDUCTOR — TECHNICAL Order this document by MHPM6B1OA6ODID DATA I Preliminary Data Sheet MHPM6BIOA60D MHPM6B20A60D — Hybrid Power- Module ~~ Motorola Preferred Devices Integrated Power Stage for 230 VAC Motor Drives ,:!$,. These modules integrate a&phase inverter in a single convenient package,

10A60

Abstract: MBRS130LT3 MC33153 MHPM6B10A60D MHPM6B20A60D
Contextual Info: MOTOROLA Order this document by 10A60D/D SEMICONDUCTOR TECHNICAL DATA Hybrid Power Module 10A60D MHPM6B20A60D Integrated Power Stage for 230 VAC Motor Drives Motorola Preferred Devices These VersaPower modules integrate a 3–phase inverter in a

B10A60VIC

Contextual Info: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA 10A60VIC SCHOTTKY BARRIER TYPE DIODE STACK SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. FEATURES • Average Output Rectified Current : Io=10A Tc=114°C . • Repetitive Peak Reverse Voltage

Contextual Info: Rectifiers Part No. RL251M RL252M RL253M RL254M RL255M RL256M RL257M RL258M RL251 RL252 RL253 RL254 RL255 RL256 RL257 RL258 1N5400 1N5401 1N5402 1N5403 1N5404 1N5405 1N5406 1N5407 1N5408 BY255 GI500 GI501 GI502 GI504 GI506 GI508 GI510 P300A P300B P300D P300G

Contextual Info: Tsi500 Parallel RapidIO Multi-port Switch User Manual Document Number: 80A7200_MA001_06 Document Status: Final Release Date: October 2004 This document discusses the features, capabilities, and configuration requirements of the Tsi500. It is intended for hardware and software

10A10

Abstract: 10A60 10A100 10A05 10A20 10A40 10A80 10A-100
Contextual Info: CURRENT 10.0 Amperes VOLTAGE 50 to 1000 Volts 10A05 THRU 10A100 Features • The plastic package carries Underwrites Laboratory Flammability Classification 94V-0 · High forward current capability · High surge current capability · Construction utilizes void-free molded plastic technique

AK 1022

Contextual Info: TitlePage - 80A7200_MA001_03 Tsi500 Parallel RapidIO Multi-port Switch User Manual Document Number: 80A7200_MA001_03 Document Status: Preliminary Release Date: March 2003 This document discusses the features, capabilities, and configuration requirements of the Tsi500. It is intended for hardware and software

Contextual Info: 10A05C-10A100C Plastic Silicon Rectifiers VOLTAGE RANGE: 50 - 1000 V CURRENT: 10.0 A TO-220AB 2.8± 0.1 Features Low cost Diffused junction 4.5± 0.2 10.2± 0.2 1.4± 0.2 19.0± 0.5 1 8.9± 0.2 ? 3.8± 0.15 Low leakage Low forward voltage drop High current capability

10A60

Abstract: 20A60 MC33153 MHPM6B10A60D MHPM6B20A60D TR1400 D2146
Contextual Info: MOTOROLA Order this document by 10A60D/D SEMICONDUCTOR TECHNICAL DATA Preliminary Data Sheet 10A60D MHPM6B20A60D Hybrid Power Module Motorola Preferred Devices Integrated Power Stage for 230 VAC Motor Drives 10, 20 AMP, 600 V HYBRID POWER MODULES

utx hqx

Abstract: ps223 MOV 471K t3 15A 250V mst POT3319 SUSCON capacitor power supply ATX12v SCHEMATICS smd diode S4 58a ncp1396 ic ps223 equivalent
Contextual Info: TND359/D Rev 0, Jan-09 High-Efficiency 255 W ATX Power Supply Reference Design Documentation Package 1 2009 ON Semiconductor Disclaimer: ON Semiconductor is providing this reference design documentation package “AS IS” and the recipient assumes all risk associated with the use and/or

nokia lcd pinout

Abstract: Tsi500 NORTEL 980 module
Contextual Info: Tsi500 Parallel RapidIO Multi-port Switch User Manual Document Number: 80A7200_MA001_04 Document Status: Preliminary Release Date: April 2004 This document discusses the features, capabilities, and configuration requirements of the Tsi500. It is intended for hardware and software

Contextual Info: 10A05T-10A100T Plastic Silicon Rectifiers VOLTAGE RANGE: 50 - 1000 V CURRENT: 10.0 A TO-220AC 2.8± 0.1 Features Low cost Diffused junction 4.5± 0.2 10.2± 0.2 1.4± 0.2 19.0± 0.5 8.9± 0.2 φ 3.8± 0.15 Low leakage Low forward voltage drop High current capability

SR10A-8

Abstract: 10A60
Contextual Info: SR10A20F THRU SR10A100F Schottky Barrier Rectifier YENYO Voltage Range 20 to 100 V Current 10.0 Ampere Features ¬ Low forward voltage drop ¬ High current capability ¬ High reliability ¬ High surge current capability Mechanical Data ITO-220AC .185 4.70

10A80

Abstract: 10A05 10A10 10A100 10A20 10A40 10A60 GPA801 GPA802 GPA803
Contextual Info: LEADED THRU-HOLE General Purpose & Fast Recovery Rectifiers GENERAL PURPOSE RECTIFIERS (Including Glass Passivated, use G suffix) Operating Temperature: -65°C to 125°C RF Cross Max Avg. Peak Peak Fwd Surge Max Forward Max Reverse Package Outline Part Number Reference Rectified Inverse Current @ 8.3ms Voltage @ 25°C Current @ 25°C

k 10a60d

Abstract: 10A60D 10A60 20A60 JSD 3E
Contextual Info: MOTOROLA 0rderthjsdocument SEMICONDUCTOR TECHNICAL DATA by 10A60D/D Hybrid Pow er M odule M HPM 10A60D M HPM 6B20A60D Integrated Power Stage for 230 VAC Motor Drives Motorola Preferred Devices These VersaPower modules integrate a 3 -p h a se inverter in a

10A600V

Abstract: 1XGH20N60AU1 IGBT cross reference HGTP20N6QB3 IXSH20N60AU1 20a600v 12A600V CT60AM-20 5N60RUFD 5A1200V
Contextual Info: SAMSUNG IGBT TOSHIBA MOTOLORA HARRIS SIEM ENS IXYS HUfU3NÖ0B3S hü'mSNtäoöä U ltiJ 102 H U IU /N Ö Ü B 3 HGIP12NB0B3 IXGP10N60A U 115J101 IXGH10N60A HGTP20N6QB3 GT25JT01 HGlu2UfJt>063 IXGH20N6QA IXGH24N6QA HU Î J4UNöUt33 IXGH40N60A IXGH50N6ÛA, HU I P^NbUBaU

diode 10A6

Abstract: 7805 molex 51021 D6F-20A6-000 AWG28 D6F-10A5-000 D6F-10A6-000 D6F-20A5-000 D6F-50A5-000 D6F-50A6-000
Contextual Info: MEMS Flow Sensor D6F-@A5/D6F-@A6 High-accuracy Sensing with a Compact Body for 10 to 50 L/min Flow Rates. • Accurately detects a mass flow rate of 10 to 50 L/min. ■ A compact size of 30 x 78 × 30 mm D × W × H . RoHS Compliant Ordering Information

zp 5a

Contextual Info: 6.螺栓型平板型整流管、晶闸管 序号 1 名称 整流管 型号 IF VRRM Trr T g A V µs ZP 系列 5A-500A 300V-4000V 2 快速整流管 ZK 系列 5A-800A 300V-2500V 3 晶闸管

jointal Z

Abstract: 5n fast recovery diodes 30DL4 diode 30dl4 F10P20F circuit SCHEMATIC DIAGRAM SMPS 12v 5A diode RP 6040 31DF2 diode f5kq100 smps 8085
Contextual Info: APPLICATION NOTE FRED U ltr a F a st R ec o v er y AND SCHOTTKY BARRIER D i ODE SBD APPLICATION NOTE TABLE OF CONTENTS Introduction. 27 1.Fast Recovery Diode . 27 2 .FRD and SBD .'. 28

bus Door lock systems

Abstract: KLKR Fuses Class CC NEC 701 LPSC001ID 277 volt fuse
Contextual Info: Pre-Engineered Solutions LCP Fused Coordination Panel Standard Features • 3 Different Voltage Ratings • Copper Bus • Branch Circuit Breakers Coordinated w/ Class CC Fuses • Class CC Fuse Holders have Built-In Blown Fuse Indication • Multiple NEMA Enclosures

LPG GAS SENSOR

Abstract: AIR FLOW DETECTOR CIRCUIT DIAGRAM LPG GAS DETECTION AND CONTROL laparoscopic surgery LPG GAS DETECTOR Velocity Sensors OZONE GENERATOR mems Flow Sensor in cpap D6F-V03A1 air flow detector sensor
Contextual Info: MEMS flow sensors MEMS flow sensors you can rely on Precise, dependable mass flow measurement in a small package. We have introduced a new generation of MEMS based flow sensors used for gas flow velocity and mass flow rate measurements. The 3D MEMS structure offers outstanding