CAPACITOR 330 NF
Abstract: PD85025-E ATC capacitor 100b 470jw murata CAPACITOR grm32nf51e106za01b 334k X7R 50 PD85025 102J DB-85025-520 EEVHB1V100P EXCELDRC35C
Text: DB-85025-520 RF power amplifier using PD85025-E for UHF OFDM radio Features • Excellent thermal stability ■ Frequency: 340 - 520 MHz ■ Supply voltage: 15 V ■ Output power: 10 WPEP ■ Gain: 19 ± 1 dB ■ Efficiency: 45 % - 52 % ■ Load mismatch: 20:1
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DB-85025-520
PD85025-E
DB-85025-520
CAPACITOR 330 NF
ATC capacitor 100b 470jw
murata CAPACITOR grm32nf51e106za01b
334k X7R 50
PD85025
102J
EEVHB1V100P
EXCELDRC35C
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Untitled
Abstract: No abstract text available
Text: VRF148A PRELIMINARY 50V, 30W, 175MHz RF POWER VERTICAL MOSFET The VRF148A is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation
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VRF148A
175MHz
VRF148A
30MHz,
175MHz,
MRF148A
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Untitled
Abstract: No abstract text available
Text: VRF148A VRF148AMP 50V, 30W, 175MHz RF POWER VERTICAL MOSFET The VRF148A is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation
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VRF148A
VRF148AMP
175MHz
VRF148A
30MHz,
175MHz,
MRF148A
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MRF148A
Abstract: 2204B M113 VRF148A 10WPEP 300WPEP 92010 647s
Text: VRF148A VRF148AMP 50V, 30W, 175MHz RF POWER VERTICAL MOSFET The VRF148A is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation
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VRF148A
VRF148AMP
175MHz
VRF148A
30MHz,
175MHz,
MRF148A
MRF148A
2204B
M113
10WPEP
300WPEP
92010
647s
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MRF148A
Abstract: No abstract text available
Text: VRF148A VRF148AMP 50V, 30W, 175MHz RF POWER VERTICAL MOSFET The VRF148A is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation
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Original
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PDF
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VRF148A
VRF148AMP
175MHz
VRF148A
30MHz,
175MHz,
MRF148A
MRF148A
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VRF148A
Abstract: 2204B M113 MRF148A 647s
Text: VRF148A 50V, 30W, 175MHz RF POWER VERTICAL MOSFET The VRF148A is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation
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Original
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PDF
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VRF148A
175MHz
VRF148A
30MHz,
175MHz,
MRF148A
2204B
M113
MRF148A
647s
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Untitled
Abstract: No abstract text available
Text: VRF148A G VRF148AMP(G) 50V, 30W, 175MHz RF POWER VERTICAL MOSFET The VRF148A is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation
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VRF148A
VRF148AMP
175MHz
30MHz,
175MHz,
MRF148A
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2SC2509
Abstract: 10WPEP 0.8 ENAMEL COATED COPPER WIRE, 9ID, 20T 121ID AC75 C8 15t
Text: 2SC2509 S IL IC O N N P N 'E P IT A X IA L P L A N A R TYPE Unit in mm 2 -30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS. LOW SUPPLY VOLTAGE USE P- FEATURES : _ § I 1 £ to 1 . Specified 12.5V, 28MHz Characteristics . | irj H : Output Power : Po=10WpEP <
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2SC2509
2-30MHz
28MHz
10WpeP
-30dB
121ID,
30lnA
10WPEP
0.8 ENAMEL COATED COPPER WIRE, 9ID, 20T
121ID
AC75
C8 15t
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SC2395 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm 2~30M Hz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Specified 12.5V, 28MHz Characteristics Output Power Po = 10WpEP (Min.) Power Gain Gp = 17dB (Min.)
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2SC2395
28MHz
10WpEP
2-10H1A
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2SC2395
Abstract: CC125 AN374 NC35
Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2395 2 ~ 3 0M Hz SSB LINEAR POWER AMPLIFIER APPLICATIONS. Unit in mm LOW SUPPLY VOLTAGE USE FEATURES : . Specified 12.5V, 28MHz Characteristics Output Power : Po=10WpEP Minimum Gain : Gpe=17dB Efficiency nc=35%(Min.)
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2SC2395
10WpEP
28MHz
-30dB
150pF
200pF
350pF
2SC2395
CC125
AN374
NC35
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2SC2395
Abstract: E5OU 12ID 2SC239
Text: TOSHIBA 2SC2395 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2395 Unit in mm 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Specified 12.5V, 28MHz Characteristics Output Power Po = 10WpEP (Min.) Power Gain Gp = 17dB (Min.)
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2SC2395
30MHz
28MHz
000MHz
001MHz
961001EAA2'
2SC2395
E5OU
12ID
2SC239
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2SC2509
Abstract: No abstract text available
Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2509 Unit in mm 2 ' 30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS. LOW SUPPLY VOLTAGE USE p&6±gg 10.3 MAX, FEATURES : . Specified 12.5V, 28MHz Characteristics : Output Power : P o=10WpEP : M i n i m u m Gain : G p e = L^dB
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2SC2509
30MHz
28MHz
10WpEP
2SC2509
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Untitled
Abstract: No abstract text available
Text: TOSHIBA -CDISCRETE/OPTOJ 9097250 TOSHIBA ~5b DE~J TDTTESD 00D7S4b □ 56C 0 7 5 4 6 <DIS C R E T E/ OP TO r~33-°? o SILICON NPN EPITA XIA L PLANAR TYPE Unit in mm 2 ~ 3 0 M H z SSB LINEAR POWER AMPLIFIER APPLICATIONS. LOW SUPPLY VOLTAGE USE) y _ § IS
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00D7S4b
28MHz
-30dB
400pF
200pF
121ID,
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2SC2509
Abstract: AC75
Text: TOSHIBA -CDISCRETE/OPTOJ 9097250 TOSHIBA ~5b DeTJiG^SSD 56C <DIS CR ET E/ OP TO 07546 D D D 7 S 4t. □ r - 3 3 ~ ° ? o 2SC2509 S IL IC O N NPN E P IT A X IA L P LA N A R T Y P E _ Unit in mm 2 ~ 3 0 M H z SSB LINEAR POWER AMPLIFIER APPLICATIONS. LOW SUPPLY VOLTAGE USE)
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2SC2509
2-30MHz
28MHz
10WpeP
-30dE
400pF
200pF
30lnA
lllllltlllllIIII11I1IIIIEII1II11IIlllilIl
llllllllII11III1LLIIMIEllllllllllIlltllEl
AC75
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