Untitled
Abstract: No abstract text available
Text: 2. 1. M echanical Dim ensions: Schem atic: 1 o- -o 10 2 o- -o 8 4 o- -o 6 5 o- 3. Electrical S p ecifica tio ns: 0.050 Typ 0CL: P 1 — 5 2 8 m H ± 1 0% @10KHz 1.0V T ie 2 -4 Leakage L: P (1— 5) 60uH Max @100KHz 0.1V Short Pins 6 — 10 CW/W: P(1 — 10) 10OpF Max @10KHz 1.0V
|
OCR Scan
|
PDF
|
MIL-STD-202,
UL94V-0
E151556
10KHz
100KHz
10OpF
|
Untitled
Abstract: No abstract text available
Text: CAPACITANCE CONN FILTER SIZE CIRCUITS VALUE TOLERANCE FT 10OpF + / - 20% 9 3 dB MAX DIELECTRIC CONTACT CONTACT CUTOFF WITHSTANDING RATING RESIST FREQ MHz VOLTAGE 700V WORKING VOLTAGE DC - 2 5 T TO +85'C .008 OHM MAX 5A MINIMUM INSERTION LOSS-DECIBELS (dB)
|
OCR Scan
|
PDF
|
10OpF
|
Untitled
Abstract: No abstract text available
Text: MX23C513 512K -B IT M ASK ROM 8 BIT OUTPUT ORDER INFORMATION FEATURES • Bit organization - 64K x 8 (byte mode) • Fast access time - Random access: 100ns (max.) (Output load 10OpF) • Current - Operating: 30mA@5MHz - Standby:5uA • Supply voltage - 4.5V ~ 5.5V
|
OCR Scan
|
PDF
|
MX23C513
100ns
10OpF)
MX23C513TC-12
120ns
A0-A15
28TSOP
23C513-12
|
Untitled
Abstract: No abstract text available
Text: NEW W GP Series Lug/Snap-in Terminal Type fil!A/£ilz:ll! , Ultra-Sm aller-Sized(^/J\f|fi) FEATURES 1. One rank smaller case sized than HP series. 2. Suited fo r equipment down sizing. S A M X O ^^ 10OpF 450^, 1 ^SAMXCW 820pF 8Q^ SAMXOlsi 10OpF 450^ \ * L'
|
OCR Scan
|
PDF
|
10OpF
820pF
820pF
3300pF
120Hz,
30x50
35x45
35x50
22x40
|
Untitled
Abstract: No abstract text available
Text: CONN SIZE 9 FILTER CIRCUITS VALUE TOLERANCE FT 10OpF + / - 20% CAPACITANCE 3 dB MAX DIELECTRIC CONTACT CONTACT CUTOFF WITHSTANDING RATING RESIST FREQ MHz VOLTAGE 700V 25 MHz -2 5T TO +85'C .008 OHM MAX 5A MINIMUM INSERTION LOSS-DECIBELS (dB) WORKING VOLTAGE
|
OCR Scan
|
PDF
|
10OpF
UL94V-0,
|
Untitled
Abstract: No abstract text available
Text: CAPAC ITANCE CONN FILTER FILTER SIZE DESIGNATION CIRCUITS 50 FT VALUE TOLERANCE ±15% 10OpF - 3 dB MAX DIELECTRIC CONTACT CONTACT CUTOFF WITHSTANDING RATING RESIST FREQ MHz VOLTAGE 1000VDC - - 5 5 'C — 5A MINIMUM INSERTION LOSS-DECIBELS (d B ) WORKING VOLTAGE
|
OCR Scan
|
PDF
|
10OpF
1000VDC
500VDC
|
Untitled
Abstract: No abstract text available
Text: CWR06 SST S0LID TANTALUM: Chip PRODUCT FEA TU R ES • • • • • Established Reliability Military Product Terminations Available from 4 to 50 VDC 0.1 to 10OpF Tape and Reel Option CW R06 Characteristics: Tansitor’s CW R06 capacitors are qualified to the latest version
|
OCR Scan
|
PDF
|
10OpF
requiremR06N
CWR06N
|
Untitled
Abstract: No abstract text available
Text: 'S S T • MX23C512 512K -B IT M ASK ROM 8 BIT OUTPUT ORDER INFORMATION FEATURES • Bit organization - 64K x 8 (byte mode) • Fast access time - Random access: 100ns (max.) (Output load 10OpF) • Current - Operating: 30mA @ 5M Hz • Supply voltage - 4.5V ~ 5.5V
|
OCR Scan
|
PDF
|
MX23C512
MX23C512PC-10
MX23C512MC-10
MX23C512QC-10
100ns
100ns
10OpF)
A0-A15
|
Untitled
Abstract: No abstract text available
Text: V NEW QP Series Lug/Snap-in Terminal Type fil!A/£ilz:ll! , Withstanding Vibration(i5fti|i]) FEATURES 1. Designed for withstanding vibration. 2. Suited for washing machines and etc. ^SAMXCW S A M X O ^^ 10OpF 450^, 1 820pF 8Q^ SAMXOlsi 10OpF 450^ S A M X o^.
|
OCR Scan
|
PDF
|
10OpF
820pF
120Hz,
30x40
30x50
35x35
120Hz
|
Untitled
Abstract: No abstract text available
Text: • ■ ! ■ ■ ■ ■ • '|<f TOSHIBA MIOS MEMORY PRODUCTS 8,192 WORD X 8 BIT CM OS STATIC RAM SILICON GATE C M O S T C 5 5 63 A P L-1 0, T C 5563A P L-12 T C 55 6 3 A P L -1 5 DESCRIPTIO N The TC5563APL is 65,536 bit static random access memory organized as 8,1 92 words by 8 bits
|
OCR Scan
|
PDF
|
TC5563APL
TMM2764D)
6D28A-P)
|
500 watt mosfet power amplifier circuit diagram
Abstract: transistor v2w power supply IRF830 APPLICATION 300 watt mosfet amplifier
Text: y IN T E G R A T E D C I R C U IT S UC1852 UC2852 UC3852 UNITRQDE High Power Factor Preregulator FEATURES • Low-Cost Power Factor Correction • Power Factor Greater Than 0.99 • Few External Parts Required • Controlled On-Time Boost PWM • Zero-Current Switching
|
OCR Scan
|
PDF
|
UC1852
UC2852
UC3852
F/250VAC
1nF/16V
68nF/35V
180pF/16V
F/16V
82nF/450V
500 watt mosfet power amplifier circuit diagram
transistor v2w
power supply IRF830 APPLICATION
300 watt mosfet amplifier
|
UCC3813-4
Abstract: UCCx813
Text: UCC2813-0/-1/-2/-3/-4/-5 UCC3813-0/-1 /-2/-3/-4Z-5 U N IT R O D E Low Power Economy BiCMOS Current Mode PWM FEATURES DESCRIPTION • The UCC3813-0/-1/-2/-3/-4/-5 family of high-speed, low-power integrated circuits contain all of the control and drive components required for off-line
|
OCR Scan
|
PDF
|
UCC2813-0/-1/-2/-3/-4/-5
UCC3813-0/-1
UCC3813-0/-1/-2/-3/-4/-5
UCC3802ator
UCC3813-3/-5
UCC3813-0/-2/-3
UCC3813-1/-4/-5
UCC3813-0
UCC3813-5
UCC3813-4
UCCx813
|
TC518129
Abstract: de interlace
Text: TOSHIBA TC518129AP/ASP/AF/AFW-80/10/12 TC518129APL/ASPL/AFL/AFWL30/10/12 TC518129AFTLS0/10/12 SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The T C 5 1 8 1 2 9 A is a 1M bit high speed C M O S p se udo static R AM organized as 131,07 2 w o rd s by 8 bits. The TC 5 18 1 29A utilizes
|
OCR Scan
|
PDF
|
TC518129AP/ASP/AF/AFW-80/10/12
TC518129APL/ASPL/AFL/AFWL30/10/12
TC518129AFTLS0/10/12
TC518129APL/ASPL/AFL/AFWL/AFTL-80/10/12
AO-A16
TC518129
de interlace
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA TLCS-90 Series TMP90CH45 CMOS 8—Bit Microcontrollers TMP90CH45N/TMP90CH45F 1. Outline and Characteristics The TMP90CH45 is a high-speed, high performance 8-bit microcontroller developed for application in the control of various devices. The TMP90CH45 CMOS 8-bit microcontroller integrates an 8bit CPU, RAM, A/D converter, multi-function timer/event counter,
|
OCR Scan
|
PDF
|
TLCS-90
TMP90CH45
TMP90CH45N/TMP90CH45F
TMP90CH45
TMP90CH45N
64-pin
TMP90CH45F
TMP90CH45:
|
|
|
RL3792
Abstract: 500 watt mosfet power amplifier circuit diagram
Text: y UC1852 UC2852 UC3852 U N IT R O D E High Power-Factor Preregulator FEATURES DESCRIPTION • Low-Cost Power Factor Correction • Power Factor Greater Than 0.99 • Few External Parts Required The UC1852 provides a low-cost solution to active power-factor correction PFC
|
OCR Scan
|
PDF
|
UC1852
UC2852
UC3852
47nF/250VAC
1nF/16V
iF/35V
180pF/16V
iF/16V
82nF/450V
RL3792
500 watt mosfet power amplifier circuit diagram
|
TAB 429 H toshiba
Abstract: R53 P1F SM5544TE-4.194304M
Text: TOSHIBA TMP47C800/980 CMOS 4-BIT MICROCONTROLLER TMP47C800N TMP47C800F The 47C800 Is a high speed and high perform ance 4-bit single chip microcomputer, Integrating RO M , RAM , Input/output ports, timer/counters, a serial Interface, and tw o clock generators on a chip.
|
OCR Scan
|
PDF
|
TMP47C800/980
TMP47C800N
TMP47C800F
47C800
TLCS-470
P47C800N
P47C800F
P47P8
TAB 429 H toshiba
R53 P1F
SM5544TE-4.194304M
|
Q110B
Abstract: No abstract text available
Text: TOSHIBA TMP47C800N TMP47C800F CMOS 4-B it Microcontrollers The 47C800 is a high speed and high performance 4-bit single chip microcomputer, integrating ROM, RAM, input/output ports, timer/counters, a serial interface, and two clock genera tors on a chip.
|
OCR Scan
|
PDF
|
TMP47C800N
TMP47C800F
TMP47C800F
47C800
TLCS-470
TMP47C800N
SOIP42
QFP44
Q110B
|
ta25 du14
Abstract: No abstract text available
Text: ST1641OOOAG1 -xxLVG 144-PIN SO-DIMMS 1M X 64 Bits DRAM SO-DIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: *R A C *C A C ‘ rc STI. •-60LVG 60ns 15ns 110ns STI. •-70LVG 70ns 20ns 130ns STI. •-80LVG 80ns 20ns 150ns The Simple Technology STI641000AG1 is a 1M x 64 bits
|
OCR Scan
|
PDF
|
ST1641OOOAG1
144-PIN
STI641000AG1
44-pin
-60LVG
ta25 du14
|
jeida+dram+88+pin
Abstract: jeida 88 pin jeida dram 88 pin
Text: STI321000C1 -xxVx 88-PIN CARDS 1M X 32 DRAM Card FEATURES • Performance range: ^RAC ^CAC *RC STI321000C1-60Vx 60ns 15ns 110ns STI32100OC1-7OVx 70ns 18ns 130ns STI321000C1-80Vx 80ns 20ns 150ns The Simple Technology STI321000C1 is a 1M bit x 32 Dynamic RAM high density memory card. The Simple Technology
|
OCR Scan
|
PDF
|
STI321000C1
STI321000C1-60Vx
STI32100OC1-7OVx
STI321000C1-80Vx
110ns
130ns
150ns
88-PIN
jeida+dram+88+pin
jeida 88 pin
jeida dram 88 pin
|
fr108
Abstract: LA1185 la1260 mitsumi coils sanyo fm front end YT-30105 YT-3019 la12so mitsumi fm KW-30011
Text: Ordering number: EN 1 506D Monolithic Linearle i LA1260 N0.15Ö6D r SANYO i FM/AM T u n e r S y s t e m for Ra d i o -Ca s s e t t e Re c o r d e r s , M u s i c C e n t e r s Functions FM: IF amp., quadrature detector, AF preamp., tuning indicator drive output
|
OCR Scan
|
PDF
|
LA1260
130mV
24MHz)
100dB/m
fr108
LA1185
la1260
mitsumi coils
sanyo fm front end
YT-30105
YT-3019
la12so
mitsumi fm
KW-30011
|
Untitled
Abstract: No abstract text available
Text: STI368003 72-PIN SIMMS 8M X 36 BITS DRAM SIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: ^RAC ^CAC ^RC STI368003-60 60ns 15ns 110ns STI368003-70 70ns 20ns 130ns • Fast Page Mode operation • CAS-before-RAS refresh capability • RAS-only and Hidden refresh capability
|
OCR Scan
|
PDF
|
STI368003
STI368003-60
STI368003-70
110ns
130ns
72-PIN
STI368003
24pin
28-pin
|
tc55257cfl
Abstract: No abstract text available
Text: TOSHIBA TC55257CPiyCFL/CSPL/CFTL/CTRIr70/85/10 PRELIMINARY SILICON GATE CMOS 32,768 WORD x 8 BIT STATIC RAM Description The TC55257CPL is a 262,14^ b t CMOS static random access memory organized as 32,768 words by 8 oits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating current of
|
OCR Scan
|
PDF
|
TC55257CPiyCFL/CSPL/CFTL/CTRIr70/85/10
TC55257CPL
5257CPL/CFL/CSPL/CFTL/CTRL-70/85/10
tc55257cfl
|
30-pin SIMM RAM
Abstract: No abstract text available
Text: STI94000 30-PIN SIMMS 4M X 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI94000 is a 4M bit x 9 Dynamic RAM high density memory module. The Simple Technology STI94000 consist of nine CMOS 4 M x 1 DRAMs in 20-pin SOJ package
|
OCR Scan
|
PDF
|
STI94000
30-PIN
110ns
130ns
150ns
STI94000
20-pin
30-pin SIMM RAM
|
Untitled
Abstract: No abstract text available
Text: STI648100G1 -xxVG 144-PIN SO-DIMMS 8M X 64 Bits DRAM SO-DIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI648100G1 is a 8M x 6^- bits Dynamic RAM high density memory module. The Simple Technology STI648100G1 consist of eight CMOS 8M x 8 bits DRAMs in 32pin TSOP packages, and one 256 bits x 8 bits serial EEPROM
|
OCR Scan
|
PDF
|
STI648100G1
144-PIN
32pin
-50VG*
|