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    108 TO 174 MHZ Search Results

    108 TO 174 MHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ADC1038CIWM Rochester Electronics LLC ADC, Successive Approximation, 10-Bit, 1 Func, 8 Channel, Serial Access, PDSO20, SOP-20 Visit Rochester Electronics LLC Buy
    TL505CN Rochester Electronics LLC ADC, Dual-Slope, 10-Bit, 1 Func, 1 Channel, Serial Access, BIMOS, PDIP14, PACKAGE-14 Visit Rochester Electronics LLC Buy
    ML2258CIQ Rochester Electronics LLC ADC, Successive Approximation, 8-Bit, 1 Func, 8 Channel, Parallel, 8 Bits Access, PQCC28, PLASTIC, LCC-28 Visit Rochester Electronics LLC Buy
    CA3310AM Rochester Electronics LLC ADC, Successive Approximation, 10-Bit, 1 Func, 1 Channel, Parallel, Word Access, CMOS, PDSO24, PLASTIC, MS-013AD, SOIC-24 Visit Rochester Electronics LLC Buy
    CA3310M Rochester Electronics LLC ADC, Successive Approximation, 10-Bit, 1 Func, 1 Channel, Parallel, Word Access, CMOS, PDSO24, PLASTIC, MS-013AD, SOIC-24 Visit Rochester Electronics LLC Buy

    108 TO 174 MHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DBM20

    Abstract: No abstract text available
    Text: 5530 UNION CENTRE DRIVE WEST CHESTER, OHIO 45069 USA PH: 513-870-9060 FAX: 513-870-9064 PRELIMINARY MINI-HYBRID Digitally Tunable Bandpass Filter Frequency Coverage …………….….….108 to 505 MHz 108-156 MHz 118-174 MHz 225-400 MHz 240-360 MHz 275-505 MHz


    Original     		PDF 292-318MHz 250mA 28VDC 10-Apr-01 DBM20

    ericsson 10159

    Abstract: PTF10159 470-860 mhz Power amplifier w
    Text: PTF 10159 120 Watts, 470–860 MHz GOLDMOS Field Effect Transistor Description The PTF 10159 is an internally matched, common source N-channel enhancement-mode lateral MOSFET intended for large signal television amplifier applications from 470 to 860 MHz. It is rated at 120 watts power


    Original     		PDF UT-85-25 1-877-GOLDMOS 1301-PTF ericsson 10159 PTF10159 470-860 mhz Power amplifier w

    ericsson 10159

    Abstract: PTF 10159 10159 atc 174 capacitor siemens 4700 35 G200 K1206 UT-85-25 470-860 mhz Power amplifier w UT85-25
    Text: PTF 10159 120 Watts, 470–860 MHz GOLDMOS Field Effect Transistor Description The PTF 10159 is an internally matched, LDMOS FET intended for large signal television amplifier applications from 470 to 860 MHz. It is rated at 130 watts power output. Nitride surface passivation and


    Original     		PDF UT-85-25 1-877-GOLDMOS 1301-PTF ericsson 10159 PTF 10159 10159 atc 174 capacitor siemens 4700 35 G200 K1206 470-860 mhz Power amplifier w UT85-25

    RFW8021

    Abstract: heraeus Heraeus PD 860002 SA chip antenna express card DVB 86-0002
    Text: RFW8021 Vishay RFWaves RFW8021 Chip Antenna for Mobile Devices FEATURES • Small outline 10.5 x 15.5 x 1.2 mm • • • • Omni directional, linear polarization Complies with MBRAI standard Complete UHF band coverage (470 MHz to 860 MHz) Requires a tuning circuit and ground plane for optimal


    Original     		PDF RFW8021 RFW8021 18-Jul-08 heraeus Heraeus PD 860002 SA chip antenna express card DVB 86-0002

    vitramon VJ

    Abstract: Heraeus PD 860002 SA
    Text: VJ 6040 Vishay Vitramon VJ 6040 UHF Chip Antenna for Mobile Devices FEATURES • Small outline 10.5 mm x 15.5 mm x 1.2 mm • Omni directional, linear polarization • Complies with MBRAI standard • Complete UHF band coverage (470 MHz to 860 MHz) • Requires a tuning circuit and ground plane for optimal


    Original     		PDF WO2008250262 US2008303720 US2008305750 WO2008154173 2002/95/EC 18-Jul-08 vitramon VJ Heraeus PD 860002 SA

    CMMB antenna

    Abstract: 6040 vitramon VJ antenna radiation 86-0002
    Text: VJ 6040 Vishay Vitramon VJ 6040 UHF Chip Antenna for Mobile Devices FEATURES • Small outline 10.5 mm x 15.5 mm x 1.2 mm • Omni-directional, linear polarization • Complies with MBRAI standard • Complete UHF band coverage (470 MHz to 860 MHz) up to 1.1 GHz


    Original     		PDF WO2008250262 US2008303720 US2008305750 WO2008154173 2002/95/EC 18-Jul-08 CMMB antenna 6040 vitramon VJ antenna radiation 86-0002

    Untitled

    Abstract: No abstract text available
    Text: VJ 6040 Vishay Vitramon VJ 6040 UHF Chip Antenna for Mobile Devices FEATURES • Small outline 10.5 mm x 15.5 mm x 1.2 mm • Omni-directional, linear polarization • Complies with MBRAI standard • Complete UHF band coverage (470 MHz to 860 MHz) up to 1.1 GHz


    Original     		PDF WO2008250262 US2008303720 US2008305750 WO2008154173 2002/95/EC 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: VJ 6040 Vishay Vitramon VJ 6040 UHF Chip Antenna for Mobile Devices FEATURES • Small outline 10.5 mm x 15.5 mm x 1.2 mm • Omni-directional, linear polarization • Complies with MBRAI standard • Complete UHF band coverage (470 MHz to 860 MHz) up to 1.1 GHz


    Original     		PDF WO2008250262 US2008303720 US2008305750 WO2008154173 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    heraeus

    Abstract: uhf pcb antenna VJ6040 WO2008154173 Heraeus PD 860002 SA
    Text: VJ 6040 Vishay Vitramon VJ 6040 UHF Chip Antenna for Mobile Devices FEATURES • Small outline 10.5 mm x 15.5 mm x 1.2 mm • Omni-directional, linear polarization • Complies with MBRAI standard • Complete UHF band coverage (470 MHz to 860 MHz) up to 1.1 GHz


    Original     		PDF WO2008250262 US2008303720 US2008305750 WO2008154173 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 heraeus uhf pcb antenna VJ6040 WO2008154173 Heraeus PD 860002 SA

    "RF Power Modules"

    Abstract: BLW85 bfq34 RF Power Modules BLF147 BLF244 BLW83 BLW33 BLF175 bfg97
    Text: DISCRETE SEMICONDUCTORS Line-ups RF & Microwave Power Transistors and RF Power Modules Supersedes data of 1998 Feb 5 2000 Mar 02 Philips Semiconductors RF & Microwave Power Transistors and RF Power Modules Line-ups SSB TRANSMITTERS 1.5 to 30 MHz INPUT POWER


    Original     		PDF BLV10 BLW87 BLV20 BLW83 BLV11 BLW85 BLW87 BLW83 BLW76 "RF Power Modules" BLW85 bfq34 RF Power Modules BLF147 BLF244 BLW33 BLF175 bfg97

    MRF5811LT1

    Abstract: MRF5811L 742 792 07 742 792 71 Transistor motorola 418 742 792 116 NF50 TUNER 0436 HP11590B
    Text: MOTOROLA Order this document by MRF5811LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF5811LT1 NPN Silicon High-Frequency Transistor • • • • • • • • Designed for high current, low power amplifiers up to 1.0 GHz. Low Noise 2.0 dB @ 500 MHz


    Original     		PDF MRF5811LT1/D MRF5811LT1 MRF5811LT1/D* MRF5811LT1 MRF5811L 742 792 07 742 792 71 Transistor motorola 418 742 792 116 NF50 TUNER 0436 HP11590B

    CLY29

    Abstract: CLY29-00 CLY29-05 CLY29-10 GMW05880 IDp12
    Text: CLY29. HiRel C-Band GaAs Power- MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 100 MHz to 8 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application


    Original     		PDF CLY29. CLY29-00 MWP-25 CLY29-05 CLY29-10 CLY29 CLY29-00 CLY29-05 CLY29-10 GMW05880 IDp12

    mfc-1780a

    Abstract: No abstract text available
    Text: VOLTAGE CONTROLLED OSCILLATORS MINIATURE SURFACE-MOUNT PACKAGE FREQUENCY RANGE NOMINAL TUNING VOLTAGE DC BIAS REQUIREMENTS OUTPUT POWER Tolerance dB TYPICAL TYPICAL PHASE NOISE HARMONIC dBc/Hz SUPPRESSION Offset at 10 KHz/100 KHz (dBc) PUSHING PULLING (MHz/Volt)


    Original     		PDF KHz/100 -MFC2130A MFC2140A MFC2160A MFC2180A MFC2200A MFC2200B MFC2250A MFC2265A MFC2270A mfc-1780a

    CLY29

    Abstract: CLY29-00 CLY29-05 CLY29-10
    Text: CLY29 HiRel C-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 100 MHz to 8 GHz • Hermetically sealed microwave power package • • Low thermal resistance for high voltage application


    Original     		PDF CLY29 CLY29-00 MWP-25 CLY29-05 CLY29-10 CLY29-nn: QS9000 CLY29 CLY29-00 CLY29-05 CLY29-10

    CLY29

    Abstract: CLY29-00 CLY29-05 CLY29-10
    Text: CLY29 HiRel C-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 100 MHz to 8 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application


    Original     		PDF CLY29 CLY29-00 MWP-25 CLY29-05 CLY29-10 CLY29-nn: QS9000 CLY29 CLY29-00 CLY29-05 CLY29-10

    Untitled

    Abstract: No abstract text available
    Text: WJ-PA12/SMPA12 10 to 1200 M H z TO-8 CASCADABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ HIGH OUTPUT POWER: +24.5 dBm TYP. @ +20 Vdc ♦ WIDE POWER SUPPLY RANGE: +12 TO +20 VOLTS ♦ WIDE BANDWIDTH: 10 TO 1200 MHz ♦ LOW VSWR: < 1.5:1 (TYP.) Outline Drawings


    OCR Scan     		PDF WJ-PA12/SMPA12 D007E31

    surface mount transistor A40

    Abstract: transistor BC 157
    Text: W J - A 4 / S M A 4 500 TO 4000 MHz TO-8 CASCAD ABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT ULTRA-WIDE BANDWIDTH: 500-4000 MHz HIGH GAIN -TWO STAGES: 14.5 dB TYP. HIGH OUTPUT LEVEL: +15.0 dBm (TYP.) Outline Drawings A40 Specifications’* 0.450 n


    OCR Scan     		PDF 50-ohm WJ-CA40 WJ-A40 surface mount transistor A40 transistor BC 157

    WJ-A35-1

    Abstract: WJ-CA35-1
    Text: WJ-A35-1 / SMA35-1 2 to 2400 MHz TO-8 CASCADABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ ULTRA WIDE BANDWIDTH: 1 - 2600 MHz TYP. ♦ MEDIUM OUTPUT LEVEL: +9.5 dBm (TYP.) Outline Drawings A35-1 Specifications 0.200 (5.08) Guaranteed Typical Characteristics


    OCR Scan     		PDF WJ-A35-1 SMA35-1 A35-1 WJ-CA35-1

    RF Power Modules

    Abstract: BGY47 Philips Semiconductors RF Power Modules BGY145B BGY110E SOT-246 BGY110F "RF Power Modules" GP 132
    Text: Philips Semiconductors RF power modules Type number survey INTRODUCTION In this alphanumeric list we present all RF power modules mentioned in this handbook, together with the most important data. TYPE NUMBER ENVELOPE Vs V f Pl (MHz) (W) Gp (dB) PAGE BGY32


    OCR Scan     		PDF BGY32 BGY33 BGY35 BGY36 BGY43 BGY46A BGY46B BGY47A BGY95A BGY95B RF Power Modules BGY47 Philips Semiconductors RF Power Modules BGY145B BGY110E SOT-246 BGY110F "RF Power Modules" GP 132

    Philips Semiconductors RF Power Modules

    Abstract: RF Power Modules Philips Semiconductors Selection Guide BGY110E "RF Power Modules"
    Text: Philips Semiconductors RF power modules Selection guide INTRODUCTION The following tables represent our complete range of RF power modules. VHF modules for mobile transminers f MHz Pl (W) Vs (V) 18 12.5 68 to 88 18 12.5 80 to 108 18 12.5 132 to 156 18 12.5


    OCR Scan     		PDF OT132B OT288C OT183A Philips Semiconductors RF Power Modules RF Power Modules Philips Semiconductors Selection Guide BGY110E "RF Power Modules"

    SMA66-1

    Abstract: No abstract text available
    Text: W J - A 6 6 - 1 / S M A 6 6 - 1 10 to 1000 MHz TO-8 CASCAD ABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH GAIN - TWO STAGES: 27.5 dB TYP. LOW NOISE: < 3.0 dB (TYP.) HIGH POWER OUTPUT: 15.0 dBm (TYP.) WIDE POWER SUPPLY RANGE: 5 VOLTS TO 15 VOLTS


    OCR Scan     		PDF A66-1 Compre27 DQ71D3 SMA66-1

    WJ-A88-1

    Abstract: WJ-A88 ATIC 91
    Text: WJ-A88-1 / SMA88-1 5 to 300 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH GAIN: 18.5 dB TYP. HIGH OUTPUT POWER: +18.5 dBm (TYP.) HIGH THIRD ORDER I.P.: +30 dBm (TYP.) Outline Drawings A88-1 Specifications* 0.460 □ (11.41)°


    OCR Scan     		PDF WJ-A88-1 SMA88-1 50-ohm A88-1 000710b WJ-A88 ATIC 91

    TRANSISTOR C 5387

    Abstract: No abstract text available
    Text: WJ-LA45-1 / SMLA45-1 1000 to 4000 MHz TO-8 CASCADABLE LIMITING AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ SYMMETRICAL CLIPPING: GOOD EVEN ORDER SUPPRESSION Outline Drawings LA45-1 . o«„ ♦ HIGH OUTPUT LEVEL: +17 dBm TYP. ♦ MEDIUM GAIN: 14.0 dB (TYP.)


    OCR Scan     		PDF WJ-LA45-1 SMLA45-1 LA45-1 0D0731D TRANSISTOR C 5387

    rfsemi

    Abstract: No abstract text available
    Text: S IE M E N S CLY29 HiRel C-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 100 MHz to 8 GHz • Hermetically sealed microwave power package • Low thermal resistance for


    OCR Scan     		PDF CLY29 CLY29-00 CLY29-05 CLY29-10 MWP-25 CLY29-nn: QS9000 rfsemi