TIP105
Abstract: TIP107 A 107 transistor TIP106 transistor TIP105 transistor 107 A
Text: TIP105/106/107 TIP105/106/107 ◎ SEMIHOW REV.A0,Oct 2007 TIP105/106/107 TIP105/106/107 Monolithic Construction With Built In Base-Emitter Shunt Resistors PNP Epitaxial Silicon Darlington Transistor - High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A Min.
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TIP105/106/107
TIP100/101/102
TIP105
TIP106
TIP107
TIP105
TIP107
A 107 transistor
TIP106
transistor TIP105
transistor 107 A
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RG-107 diode
Abstract: marking BS Q67000-S078
Text: BS 107 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 S Pin 3 G Type VDS ID RDS(on) Package Marking BS 107 200 V 0.13 A 26 Ω TO-92 BS 107 Type BS 107 Ordering Code Q67000-S078 D Tape and Reel Information
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Q67000-S078
E6288
RG-107 diode
marking BS
Q67000-S078
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Q67000-S078
Abstract: BS 107
Text: BS 107 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 S Pin 3 G Type VDS ID RDS(on) Package Marking BS 107 200 V 0.13 A 26 Ω TO-92 BS 107 Type BS 107 Ordering Code Q67000-S078 D Tape and Reel Information
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Q67000-S078
E6288
Q67000-S078
BS 107
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22 J1J
Abstract: No abstract text available
Text: Product Description SSW-107 Stanford Microdevices’ SSW-107 is a high performance Gallium Arsenide Field Effect Transistor MMIC switch housed in a low-cost surface-mountable miniature small outline plastic package. DC-4 GHz High Isolation GaAs MMIC SPDT Switch
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SSW-107
SSW-107
500MHz
22 J1J
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design of 4-20mA transmitter for bridge type transducer using op-amp
Abstract: "Current to Voltage Converter" 4-20ma using LM358 0-10v to 4-20ma LM341A eeg amplifier examples LOC111 4-20mA transmitter for a bridge type transducer using op-amp lm358 4-20mA bridge transducer 4-20mA transmitter using op-amp circuit diagram bridge transducer 4-20ma using op
Text: APPLICATION NOTE AN-107 Linear Optocouplers AN-107 Introduction This application note describes isolation amplifier design principles for the LOC Series linear optocoupler devices. It describes the circuit operation in photoconductive and photovoltaic modes and provides some
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AN-107
AN-107-R2
design of 4-20mA transmitter for bridge type transducer using op-amp
"Current to Voltage Converter" 4-20ma using LM358
0-10v to 4-20ma
LM341A
eeg amplifier examples
LOC111
4-20mA transmitter for a bridge type transducer using op-amp
lm358 4-20mA
bridge transducer 4-20mA transmitter using op-amp
circuit diagram bridge transducer 4-20ma using op
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Untitled
Abstract: No abstract text available
Text: TIP105/106/107 TIP105/106/107 Monolithic Construction With Built In BaseEmitter Shunt Resistors • • • • • High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A Min. Collector-Emitter Sustaining Voltage Low Collector-Emitter Saturation Voltage Industrial Use
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TIP105/106/107
TIP100/101/102
O-220
TIP105
TIP106
TIP107
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Untitled
Abstract: No abstract text available
Text: TIP105/106/107 TIP105/106/107 Monolithic Construction With Built In BaseEmitter Shunt Resistors • • • • • High DC Current Gain : hFE=1000 @ VCE= -4v, IC= -3A Min. Collector-Emitter Sustaining Voltage Low Collector-Emitter Saturation Voltage Industrial Use
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TIP105/106/107
TIP100/101/102
O-220
TIP105
TIP106
TIP107
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PDF
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Untitled
Abstract: No abstract text available
Text: TIP105/106/107 TIP105/106/107 Monolithic Construction With Built In BaseEmitter Shunt Resistors • • • • • High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A Min. Collector-Emitter Sustaining Voltage Low Collector-Emitter Saturation Voltage Industrial Use
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TIP105/106/107
TIP100/101/102
O-220
TIP105
TIP106
TIP107
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TIP105
Abstract: TIP106 TIP107
Text: TIP105/106/107 TIP105/106/107 Monolithic Construction With Built In BaseEmitter Shunt Resistors • • • • • High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A Min. Collector-Emitter Sustaining Voltage Low Collector-Emitter Saturation Voltage Industrial Use
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TIP105/106/107
TIP100/101/102
O-220
TIP105
TIP106
TIP107
TIP105
TIP106
TIP107
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2n2222 -331 transistors
Abstract: 2N2222A 331 2n2222 -331 2n2222 a 331 2n2222 331 transistors JA101P 2n2222 331 2n3904 331 BC876 bd131 bd132
Text: Philips Sem iconductors Small-signal Transistors TYPE NUMBER PAGE Index TYPE NUMBER PAGE TYPE NUMBER PAGE BC107 87 BC338 107 BC558C 135 BC107A 87 BC338-16 107 BC559 139 BC107B 87 BC338-25 107 BC559A 139 BC108 87 BC338-40 107 BC559B 139 BC108A 87 BC368 111
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BC107
BC107A
BC107B
BC108
BC108A
BC108B
BC108C
BC109
BC109B
BC109C
2n2222 -331 transistors
2N2222A 331
2n2222 -331
2n2222 a 331
2n2222 331 transistors
JA101P
2n2222 331
2n3904 331
BC876
bd131 bd132
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A1E transistor
Abstract: No abstract text available
Text: B S 107 Infineon tcehnologi*» SIPMOS * Small-Signal Transistor • N channel • Enhancement mode • Logic Level 3 •^GS th = 0.8.2.0V Pin 1 VPT05548 Pin 2 S Pin 3 G Type Vbs fe BDS(on) Package Marking BS 107 200 V 0.13 A 26 a tO -92 BS 107 Type BS 107
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Q67000-S078
E6288
S35bQ5
Q133777
SQT-89
B535bQ5
D13377Ã
B235bG5
D13377T
A1E transistor
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BS107
Abstract: No abstract text available
Text: SIEMENS BS 107 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V Pin 1 Pin 2 S Type BS 107 ^DS 200 V Type BS 107 Ordering Code Q67000-S078 lD 0.13 A ffDS(on) 26 Q Pin 3 D G Package Marking TO-92 BS 107
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Q67000-S078
E6288
BS107
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MARKING BS
Abstract: BS107
Text: SIEMENS BS 107 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level ' ^GS th = 0.8.2.0V 3 VPT05 158 Pin 1 Pin 2 S Type b BS 107 Vds 200 V Type BS 107 BS 107 Ordering Code Q67000-S060 Q67000-S078 0.13 A Pin 3 D G ^DS(on) Package
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VPT05
Q67000-S060
Q67000-S078
E6288
MARKING BS
BS107
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equivalent schematic of LM107
Abstract: LM307N A 107 transistor LM101 LM101A LM107 LM107F LM107H LM107J-14 LM307
Text: DOTÜ^IOIL LM 107, LM 307 O perational A m plifiers FEATURES • • • • • Offset voltage 3 mV m axim um over tem perature 107 Input current 100 nA maximum over temperature (107) Offset current 20 nA maxim um over temperature (107) Guaranteed drift characteristics
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LM107,
LM307
LM101.
LM101A
150CC.
equivalent schematic of LM107
LM307N
A 107 transistor
LM101
LM107
LM107F
LM107H
LM107J-14
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equivalent schematic of LM107
Abstract: LM307N LM307J LM307N equivalent lm 307 operational amplifier LM101 LM101A LM107 LM107F LM107H
Text: LM107, LM307 Operational Amplifiers DWÜ^DL FEATURES • • • • • Offset voltage 3 mV m axim um over tem perature 107 Input current 100 nA m axim um over tem perature (107) Offset current 20 nA m axim um over tem perature (107) Guaranteed drift characteristics
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LM107,
LM307
LM101,
LM101A
equivalent schematic of LM107
LM307N
LM307J
LM307N equivalent
lm 307 operational amplifier
LM101
LM107
LM107F
LM107H
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Untitled
Abstract: No abstract text available
Text: VCO-107 Voltage Controlled Oscillator 500-1000 MHz DESCRIPTION The V C O 107 Voltage Controlled Oscillator* combines film circuit technology with a custom, stable high-Q varactor design. A unique, low-noise bipolar transistor and a proprietary output coupling circuit are utilized to provide flat
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VCO-107
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Untitled
Abstract: No abstract text available
Text: SSW-107 Product Description Stanford M icrodevices’ SSW -107 is a high performance Gallium Arsenide Field Effect Transistor M MIC switch housed in a low-cost surface-m ountable m iniature small outline plastic package. DC-4 GHz High Isolation GaAs MMIC SPDT Switch
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SSW-107
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Untitled
Abstract: No abstract text available
Text: SSW-107 Product Description Stanford M icrodevices’ SSW -107 is a high performance Gallium Arsenide Field Effect Transistor MMIC switch housed in a low-cost surface-m ountable m iniature small outline plastic package. DC-4 GHz High Isolation GaAs MMIC SPDT Switch
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SSW-107
30dBat2GHz
500MHz
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TRANSISTOR BC 137
Abstract: BC107 characteristic BC 108 transistor transistor bc 102 TRANSISTOR BC 109 NT 101 bc108 b 108 b BC 107 transistor transistor bc 107
Text: 2SC D • û23SbG5 OOGMOÛT T ■ S IE G ^ T -*?-// NPN Silicon Transistors SIEMENS A KTIEN G ESELLSCH A F IC 107 J C 108 - BC 109 B C 107, BC 108, and BC 109 are epitaxial NPN silicon planar transistors in T 0 18 metal case
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23SbG5
Q62702-C680
Q60203-X107-A
Q60203-X107-B
Q60203-X108
Q60203-X108-A
Q60203-X108-B
Q60203-X108-C
60203-X109
Q60203-X109-B
TRANSISTOR BC 137
BC107 characteristic
BC 108 transistor
transistor bc 102
TRANSISTOR BC 109
NT 101
bc108
b 108 b
BC 107 transistor
transistor bc 107
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bc 303 transistor
Abstract: BC 109 Transistor TRANSISTOR BC 109 BC 107 transistor A 107 transistor transistor bc 107 bc 107 npn transistor BC 108 transistor BC107 BC109
Text: * B C 107 * BC 108 BC 109 \IPN SILICON TRANSISTORS, EPITAXIAL PLANAR rRANSISTORS NPN SILICIUM, PLANAR EPITAXIAUX Jompl. of BC 177, BC 178, BC 179 îfc Preferred device Dispositif recommandé The NPN "plan epitaxial" transi ton BC 107, 3C 108 and BC 109 are intended for use in
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15VPH
Abstract: I-10K
Text: CONSUMER MICROCIRCUITS LTD PRODUCT INFORMATION! SELECTIVE SIGNALLING DEVICES Obsolete Product - For Information Only '07 SERIES FX-107 GENERAL DESCRIPTION The FX-107, FX-207 and FX-307 are a powerful and flexible fam ily of high performance m onolithic signalling devices,
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FX-107,
FX-207
FX-307
FX-207,
FX-307,
C-073
15VPH
I-10K
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square wave tone generator
Abstract: FX-207 sequential logic circuit experiments rs 307 FX-107 FX-307 1803 FX FX107
Text: CONSUMER MICROCIRCUITS LTD PRODUCT INFORMATIOM SELECTIVE SIGNALLING DEVICES Obsolete Product - For Information Only ’07 SERIES FX-107 GENERAL DESCRIPTION The FX -107, FX-207 and FX-307 are a powerful and flexible family of high performance monolithic signalling devices,
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FX-107
FX-107,
FX-207
FX-307
FX-207,
FX-307,
C-073
C-073
FX-307)
square wave tone generator
sequential logic circuit experiments
rs 307
FX-107
1803 FX
FX107
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transistor BS 107
Abstract: No abstract text available
Text: SIEMENS SIPMOS Small-Signal Transistor vDS ^ D S o n BS 107 = 200 V = 0.13 A = 26 Q • N channel • Enhancement mode • Package: T O -9 2 ') Type Ordering code for version on tape Ordering code for version in bulk BS 107 Q67000-S078 Q67000-S060 Maximum Ratings
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Q67000-S078
Q67000-S060
transistor BS 107
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BC109
Abstract: bc107 BC 107 BC108 bc 230 BC178 BC179 bc 750 BC-1096 bc audio transistors
Text: BC 107 BC 108 BC 109 SILICON PLANAR NPN LOV/ NOISE GENERAL PURPOSE AUDIO AMPLIFIERS The BC 107, BC 108 and BC109 are silicon planar epitaxial NPN transistors in TO-18 metal case. They are suitable fo r use in driver stages, low noise input stages and signal processing circu its of television receivers.
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BC109
BC178
BC179.
100mA
Jun108
bc107
BC 107
BC108
bc 230
BC179
bc 750
BC-1096
bc audio transistors
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