IGCT thyristor ABB
Abstract: IGCT igct abb IGCT thyristor current max IGCT thyristor CS 213 35L4503 MTA-156 thyristor 325 V 1 kW 640389-4
Text: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 4500 4000 32 1.40 0.325 2800 V A kA V mΩ V Asymmetric Integrated GateCommutated Thyristor 5SHY 35L4503 Doc. No. 5SYA1228-01 Jan. 01 • • • • • • Highest snubberless turn-off rating Suitable for series connection
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35L4503
5SYA1228-01
CH-5600
IGCT thyristor ABB
IGCT
igct abb
IGCT thyristor current max
IGCT thyristor
CS 213
35L4503
MTA-156
thyristor 325 V 1 kW
640389-4
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NTE6128
Abstract: 4500a maximum current rating of diodes Vrsm 106A2
Text: NTE6128 Silicon Power Rectifier Diode, 430 Amp Features: D Fast Recovery Time D Soft Recovery Characteristics D High Surge Current Rating D High Rated Blocking Voltages Applications: D Inverter D Chopper D Transmitter D Free–Wheeling Diode Absolute Maximum Ratings:
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NTE6128
NTE6128
4500a
maximum current rating of diodes
Vrsm
106A2
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NTE6128
Abstract: 4500a diode marking 430a 106A2S
Text: NTE6128 Silicon Power Rectifier Diode 430 Amp, DO200AA Features: D Fast Recovery Time D Soft Recovery Characteristics D High Surge Current Rating D High Rated Blocking Voltages Applications: D Inverter D Chopper D Transmitter D Free−Wheeling Diode Absolute Maximum Ratings:
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NTE6128
DO200AA
NTE6128
4500a
diode marking 430a
106A2S
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igct abb
Abstract: 16L45 IGCT a7000 5SDF16L4502
Text: VRRM IFAVM IFRMS IFSM VF0 rF VDClink = = = = = = = 4500 1300 2000 33 2.00 0.55 2800 Fast Recovery Diode for IGCT applications V A A kA V mΩ V 5SDF 16L4502 MARKETING INFORMATION Doc. No. 5SYA 1153-00 Feb. 99 • • • • • Patented free-floating silicon technology
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16L4502
CH-5600
igct abb
16L45
IGCT
a7000
5SDF16L4502
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35L4502
Abstract: 106A2 IGCT thyristor ABB high power igct abb IGCT
Text: Key Parameters VDRM = 4500 V ITGQM = 4000 A ITSM = 25 kA VT0 = 1.2 V rT = 0.37 mΩ VDClink = 2800 V Integrated Gate-Commutated Thyristor 5SHY 35L4502 PRELIMINARY Doc. No. 5SYA 1218-04 Feb. 99 • Direct fiber optic control • Fast response tdon < 3 µs, tdoff < 6 µs
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35L4502
HFBR-2412T,
HFBR-1412T,
CH-5600
35L4502
106A2
IGCT thyristor ABB
high power igct abb
IGCT
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7000UC
Abstract: 5SDF16L4502 106A2 16L4502
Text: Key Parameters VRRM = 4500 IFAVM = 1300 IFRMS = 2000 IFSM = 33 VF0 = 2.00 rF = 0.55 VDClink = 2800 Fast Recovery Diode for IGCT applications V A A kA V mΩ V 5SDF 16L4502 MARKETING INFORMATION Doc. No. 5SYA 1153-00 Feb. 99 Features • Patented free-floating silicon technology
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16L4502
CH-5600
7000UC
5SDF16L4502
106A2
16L4502
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Westinghouse thyristor 1000A
Abstract: Westinghouse thyristor N760CH02 3240A 3890A Westinghouse thyristor t 378 n
Text: ÜIESTCODE S E M I C O N D U C T O R S ^70^55 3TE D 0 0 0 2 23 7 7 • U E S B 2 sr-ej W ESTCO DE SEMICONDUCTORS Advance Data TN760G Issue A Jan. 198 ^ Capsule Thyristor Type N760CHQ2-H2Q 63mm diameter, regersative gate, phase control type Ratings and Characteristica
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tn760c
n760ch02-h20
hd2-h20
2dq-2000v
3d0-2100v
200-20d0v
10rns;
12SOC
00V/us
15D0uC
Westinghouse thyristor 1000A
Westinghouse thyristor
N760CH02
3240A
3890A
Westinghouse
thyristor t 378 n
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SKN1500/12
Abstract: SKN 21 DO-200 SKN 2700 106A2 semikron SKN 70
Text: 51E D • ai3bb?l 0003070 ÔE4 « S E K G b t l V II IV K U N SEMIKRON INC V rsm If a v V rrm Rectifier Diodes sin. 180;Tcase = 75 °C SKN 1500 " " P O ( - Z - 3 SKN 2000 V 1550 A 400 SKN 1500/04 600 - SKN 2000/06 2000 A - 1200 SKN 1500/12 SKN 2000/12 1600
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SKN1500/04
SKN1500/12
106A2s
-106A2s
B8-41
13bb71
T-01-23
DO-200
B8-42
SKN 21
SKN 2700
106A2
semikron SKN 70
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B848
Abstract: b847 SKN40 W0024
Text: fll3bb71 OOOBÛôb TTG 5 IE D sem ikro n SEMIKRON INC Rectifier Diodes VrsM V rrm V 4000 A 50 °C 6000 A (85 °C) 100 SKN 4000/01 - 200 SKN 4000/02 SKN 6000/02 400 SKN 4000/04 SKN 6000/04 600 SKN 4000/06 - Ifav (sin. 18 Symbol Conditions Ifav Tease Ifsm
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13bti71
-106A2s
DSC11
13bb71
B848
b847
SKN40
W0024
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pc817u
Abstract: 106A2 triac tic 221 s SHARP ssr
Text: Precautions for Use 2 -2 Precautions fo r Use Sharp’s line of optoelectronic products includes light e m ittin g e le m e n ts, lig h t p h o to d e te c to r e le m e n ts, compound elem ents, power devices and optoelectric app lication m odules. Each device type has its own
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semikron skn
Abstract: M11-P
Text: s e M IK R O n V rsm V rrm V 100 200 400 600 4000 A 50 °C 6000 A (85 °C) SKN 4000/01 SKN 4000/02 SKN 4000/04 SKN 4000/06 SKN 6000/02 SKN 6000/04 Symbol Conditions Ifav Tease Ifsm Tvj T vj ft Ir Rectifier Diodes Ifav (sin. 180; Tease — •■•) - SKN 6000
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-106A2s
semikron skn
M11-P
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b847
Abstract: SKN40 106A2
Text: fll3bb71 OOOBÛôb TTG 5 IE D sem ikro n SEMIKRON INC Rectifier Diodes VrsM V rrm V 4000 A 50 °C 6000 A (85 °C) 100 SKN 4000/01 - 200 SKN 4000/02 SKN 6000/02 400 SKN 4000/04 SKN 6000/04 600 SKN 4000/06 - If av (sin. 18 Symbol Conditions Ifav Tease Ifsm
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13bti71
-106A2s
DSC11
13bb71
T-01-23
b847
SKN40
106A2
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W0007
Abstract: 106A2
Text: SEMIKRON V rsm Ifa v sin. V rrm V Rectifier Diodes 180; Tease = 75 °C 1550 A 2000 A SKN1500 SKN2000 SKN1500/04 — 600 - 1200 SKN 1500/12 SKN 2000/06 SKN 2000/12 1600 SKN 1500/16 SKN 1500/20 SKN 1500/24 SKN 1500/29 400 2000 2400 2900 Symbol Conditions I fav
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SKN1500
SKN2000
SKN1500/04
-106A2s
3400inimi
DO-200
W0007
106A2
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water flow sensor
Abstract: diode ed 85 "water Flow Sensor" DIODE ED 32306700
Text: s e M IK R D n V rsm/V rrm V SKWD 7000/02 400 SKWD 7000/04 600 SKWD 7000/06 Conditions T v|= 25 °C; II IT Tvj = Rthjw Volw Tvj max. Tstg Pw max. W Case o If = 180°C = 19 kA 22 kA 10 ms â VF V TO i2t = = CO = = H Volw = 4 l/m in ; Tw = 40 °C ; ED = 100%
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106A2s
water flow sensor
diode ed 85
"water Flow Sensor"
DIODE ED
32306700
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