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    1061 TRANSISTOR Search Results

    1061 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    1061 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    d215

    Abstract: 2SD2226K 2SD2227S 2SD2351 2SD2537 2SD2227 94S-374-D215 d212
    Text: Transistors 2SD2537 2SD2351 / 2SD2226K / 2SD2227S 94L-1061-D212 (94S–374-D215) 322


    Original     		PDF 2SD2537 2SD2351 2SD2226K 2SD2227S 94L-1061-D212) 374-D215) d215 2SD2227S 2SD2537 2SD2227 94S-374-D215 d212

    AN-1061

    Abstract: Ultrasonic welding circuit centrifuge machine for acceleration epoxy adhesive paste cte table soft solder die bonding ultrasonic flow meter ultrasonic transducer circuit ultrasonic generator ultrasonic bond Ultrasonic Transducer for gas meter
    Text: Application Note AN-1061 Bare Die: Die Attach and Wire Bonding Guidance for setting up assembly processes By Richard Clark Table of Contents Page Introduction .1 Storage and Handling .2


    Original     		PDF AN-1061 AN-1061 Ultrasonic welding circuit centrifuge machine for acceleration epoxy adhesive paste cte table soft solder die bonding ultrasonic flow meter ultrasonic transducer circuit ultrasonic generator ultrasonic bond Ultrasonic Transducer for gas meter

    Untitled

    Abstract: No abstract text available
    Text: 1061 FIBER SENSORS Ultra-compact Digital Panel Controller CA2 SERIES Related Information •■General terms and conditions. F-17 ■■General precautions. P.1405 LASER SENSORS PHOTOELECTRIC SENSORS Conforming to EMC Directive


    Original     		PDF

    dual photodiode

    Abstract: Frequency Generator 1MHz PHOTODIODE 4 CHANNEL RESISTOR POTENTIOMETER CMPD4448 MAX3664 MAX3664ESA MAX3664EVKIT-SO SBLP-467 TAJE336K025R
    Text: 19-1061; Rev 0; 4/96 MAX3664 Evaluation Kit _Features Single +3.3V Supply ® Differential Output Drives 100Ω Load ® 590MHz Bandwidth ® Electrical or Optical Input ® Provision for User-Supplied Photodiode ® Fully Assembled and Tested


    Original     		PDF MAX3664 590MHz MAX3664EVKIT-SO MAX3664 dual photodiode Frequency Generator 1MHz PHOTODIODE 4 CHANNEL RESISTOR POTENTIOMETER CMPD4448 MAX3664ESA MAX3664EVKIT-SO SBLP-467 TAJE336K025R

    photodiode 516

    Abstract: MAX3664 Frequency Generator 1MHz SBLP-467 TAJE336K025R CMPD4448 MAX3664ESA MAX3664EVKIT-SO single phase meter board connection
    Text: 19-1061; Rev 1; 1/99 MAX3664 Evaluation Kit The MAX3664 evaluation kit EV kit simplifies evaluation of the MAX3664 transimpedance preamplifier. The MAX3664 is optimized for hybrid applications that place the preamplifier die in the same package with a photodetector. The EV kit uses a packaged version of


    Original     		PDF MAX3664 MAX3664 photodiode 516 Frequency Generator 1MHz SBLP-467 TAJE336K025R CMPD4448 MAX3664ESA MAX3664EVKIT-SO single phase meter board connection

    Untitled

    Abstract: No abstract text available
    Text: 19-1061; Rev 1; 1/99 MAX3664 Evaluation Kit The MAX3664 evaluation kit EV kit simplifies evaluation of the MAX3664 transimpedance preamplifier. The MAX3664 is optimized for hybrid applications that place the preamplifier die in the same package with a photodetector. The EV kit uses a packaged version of


    Original     		PDF MAX3664 MAX3664

    SOT23

    Abstract: SOT323 BCX70G SOT23 BCF33 956 sot23 BCF30 sot23 bcf81 transistor 1061 BC850C SOT-23
    Text: Philips Semiconductors Small-signal Transistors TYPE NUMBER PACKAGE Selection guide VCEO max. V IC max. (mA) Ptot max. (mW) hFE min. hFE max. fT min. (MHz) PNP COMPL. PAGE BC850C SOT23 45 100 250 420 800 100 BC860C 324 BC850CW SOT323 45 100 200 420 800 100


    Original     		PDF BC850C BC860C BC850CW OT323 BC860CW BC850W BC860W BCF32 BCF29 SOT23 SOT323 BCX70G SOT23 BCF33 956 sot23 BCF30 sot23 bcf81 transistor 1061 BC850C SOT-23

    2N5466

    Abstract: SDT1062 sdt1061
    Text: industrial power transistors 132 SILICON NPN HI-VOLTAGE TRANSISTORS 5 Amp TO-3 TO-66 TO-61 NUMBERS NUMBERS NUMBERS SDr SDr SDr SDr SDr SDr SDr SDr SDr SDr 1050 1051 1052 1053 1054 TO-3 1150 1151 1152 1153 1154 TO-66 SDr SDr SDr SDr SDr 1250 1251 1252 1253


    Original     		PDF

    CT914

    Abstract: philips audio amplifier ic guide UMA1000LT P-Channel RF Amplifier Philips Semiconductors Selection Guide All Microphone CT918 "true Logarithmic Amplifier" TDA7050 bs107 transistor
    Text: Philips Semiconductors Selection guide Functional index PAGE SPEECH/TRANSMISSION CIRCUITS PCA1070 programmable analog CMOS transmission IC TEA1060/1061 versatile telephone transmission circuits with dialler interface; 304 TEA1060: low-impedance input for dynamic and magnetic microphones;


    OCR Scan     		PDF PCA1070 TEA1060/1061 TEA1060: TEA1061: TEA1062/A TEA1064A TEA1064B TEA1065 TEA1066T TEA1067 CT914 philips audio amplifier ic guide UMA1000LT P-Channel RF Amplifier Philips Semiconductors Selection Guide All Microphone CT918 "true Logarithmic Amplifier" TDA7050 bs107 transistor

    Untitled

    Abstract: No abstract text available
    Text: File Number 1061 2N6609, MJ15004, RCA9116C, RCA9116D, RCA9116E HARRIS SEMICONi SECTOR SbE D • M302271 OGMOS'îS ETT ■ HAS 7 =3 3 - 2 3 Silicon P-N-P Epitaxial-Base High-Power Transistors Rugged Devices, Broadly Applicable For Industrial and Commerical Use


    OCR Scan     		PDF 2N6609, MJ15004, RCA9116C, RCA9116D, RCA9116E M302271

    transistor D 982

    Abstract: TDA7050 All Microphone tda7052 ic POCSAG Receiver piezoelectric mobile charger "true Logarithmic Amplifier" TDA7052 Audio power amplifier IC tda7052
    Text: Philips S em iconductors Semiconductors for Telecom systems Functional index page SPEECH/TRANSMISSION CIRCUITS PCA1070 programmable analog CMOS transmission IC 339 TEA1060/1061 versatile telephone transmission circuits with dialler interface; TEA1060: low impedance input for dynamic and magnetic


    OCR Scan     		PDF PCA1070 TEA1060/1061 TEA1060: TEA1061: BGY46A BGY46B BGY47A BGY95A/B BGY96A/B BGY110D/E/F/G transistor D 982 TDA7050 All Microphone tda7052 ic POCSAG Receiver piezoelectric mobile charger "true Logarithmic Amplifier" TDA7052 Audio power amplifier IC tda7052

    mj15004 equivalent

    Abstract: 2N6609 2N6609 equivalent mj15003 mj15004 clare mercury relay J15003 2N8809 RCA3773 RCA8638D
    Text: G E SO LID 3875081 X T A I T G E SOLID □ STATE 1 DE 01E | 3 ñ 7 S D fll 17456 D DD174Sb T - $ 3 - / r ' General-Purpose Power Transistors_ 2N6609, MJ15004, RCA9116C, RCA9116D, RCA9116E File Number 1061 Silicon P-N-P Epitaxial-Base * High-Power Transistors


    OCR Scan     		PDF 56---DT" 2N6609, MJ15004, RCA9116C, RCA9116D, RCA9116E O-204AA RCA2N6609, mj15004 equivalent 2N6609 2N6609 equivalent mj15003 mj15004 clare mercury relay J15003 2N8809 RCA3773 RCA8638D

    transistor h 1061

    Abstract: No abstract text available
    Text: CSC 1061 CSC1061 NPN PLASTIC POWER TRANSISTOR Low frequency Power Amplifier DIM A B C D E F G H J K L M N MIN MAX 14.42 9.63 3,56 16.51 10.67 4.83 0.90 1.15 1,40 3.75 3.68 2,29 2.79 2,54 3.43 0,56 12.70 14.73 6,35 2.03 2,92 31.24 7 DEG ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF CSC1061 transistor h 1061

    2N6609

    Abstract: J1S004
    Text: 2N6609, MJ15004, RCA9116C, RCA9116D, RCA9116E File Number 1061 Silicon P-N-P Epitaxial-Base High-Power Transistors R ugged Devices, B roadly A p p lica b le For Industrial and C o m m erical Use _ . TE R M IN A L D E S IG N A T IO N S Features: • ■ •


    OCR Scan     		PDF 2N6609, MJ15004, RCA9116C, RCA9116D, RCA9116E J15004, RCA9116E 2N6609 J1S004

    2N660

    Abstract: RCA9116E
    Text: G E S OL ID 3875081 XTA I T G E SOLID □ STATE Ï DE | 3 ñ 7 S D f l l 01E 17456 D DD174Sb , r General-Purpose Power Transistors_ 2N6609, MJ15004, RCA9116C, RCA9116D, RCA9116E File N um ber 1061 Silicon P-N-P Epitaxial-Base * High-Power Transistors Rugged Devices, B roadly A pplicable For Industrial and


    OCR Scan     		PDF DD174Sb 2N6609, MJ15004, RCA9116C, RCA9116D, RCA9116E 2N660 RCA9116E

    1061 transistor

    Abstract: c 111 transistor NPN Transistor isolated
    Text: TABLE OF CONTENTS Poge Power Transistor Technology . 2 Type/Rage Locato r.


    OCR Scan     		PDF O-39/TO-5. O-114. O-111. 1061 transistor c 111 transistor NPN Transistor isolated

    EZ 932

    Abstract: LM6162J/883 Tektronix 2212 E20A J08A LM6162N LM6262N LM6362 LM6362N M08A
    Text: LM6162/LM6262/LM6362 N a t i o n a l S e m i c o n d u c t o r LM6162/LM6262/LM6362 High Speed Operational Amplifier General Description The LM6362 family of high-speed amplifiers exhibits an ex­ cellent speed-power product, delivering 300 V /fis and 100 MHz gain-bandwidth product stable for gains as low as


    OCR Scan     		PDF LM6162/LM6262/LM6362 LM6362 TL/H/11061-11 TL/H/11061 L5011EM 010S202 LM6321. TL/H/11061-13 EZ 932 LM6162J/883 Tektronix 2212 E20A J08A LM6162N LM6262N LM6362N M08A

    Transistor BFX 59

    Abstract: Transistor BFX 25 BFX59 Transistor BFX 4 bfx 34 transistor marking code 7C transistor BFX59 MARKING 7C RF NPN POWER TRANSISTOR C 10-50 GHZ BFX59F
    Text: SIEMENS NPN Silicon RF Transistor BFX59 BFX 59F • For broadband amplifiers at collector currents up to 30 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code B FX 59 B FX 59F BFX 59 BFX 59F Q60206-X59


    OCR Scan     		PDF Q60206-X59 Q60206-X59-S5 GQb747E BFX59 ehtq8q44 6235b05 D0L7473 Transistor BFX 59 Transistor BFX 25 Transistor BFX 4 bfx 34 transistor marking code 7C transistor BFX59 MARKING 7C RF NPN POWER TRANSISTOR C 10-50 GHZ BFX59F

    2SK1213

    Abstract: transistor 2sk1213 D 1062 transistor adit Field Effect Transistor Silicon N Channel MOS vdss 600
    Text: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSH 2SK1213 HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR,DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. INDUSTRIAL APPLICATIONS FEATURES: • Low Drain-Source ON Resistance : RDS(0N)= 0.95Q (Typ.)


    OCR Scan     		PDF DD300V 00A/j 2SK1213 transistor 2sk1213 D 1062 transistor adit Field Effect Transistor Silicon N Channel MOS vdss 600

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 569 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R-|=4.7kfl JZL LÜ XLs UPON INQUIRY 1 =B Package o BCR 569 Pin Configuration II CO Marking Ordering Code liJ HI II


    OCR Scan     		PDF OT-23

    marking BFG

    Abstract: sot 223 marking code 4c
    Text: SIEMENS BFG 194 PNP Silicon RF Transistor • For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF Q62702-F1321 OT-223 900MHz marking BFG sot 223 marking code 4c

    pcf79735S

    Abstract: PCF79735 PCF7930XP philips PCF7931XP PCF7931 pcf7973 PCF7930 TRANSISTOR 612 Voltage Regulator Diodes Temperature Sensors
    Text: Philips Semiconductors Selection guide Alphanumerical index PAGE AU2901 Quad voltage comparator AU2902 Low power quad voltage comparator 1421 AU2903 Low power dual voltage comparator 1426 AU2904 Low power dual operational amplifier 1431 1416 BUK100-50DL PowerMOS transistor logic level TOPFET


    OCR Scan     		PDF AU2901 AU2902 AU2903 AU2904 BUK100-50DL BUK100-50GL BUK100-50GS BUK101-50DL BUK101-50GL BUK101-50GS pcf79735S PCF79735 PCF7930XP philips PCF7931XP PCF7931 pcf7973 PCF7930 TRANSISTOR 612 Voltage Regulator Diodes Temperature Sensors

    transistor h 1061

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN high-voltage transistors PMST5550: PMST5551 FEATURES PINNING • Low current max. 300 mA PIN • High voltage (max. 160 V). 1 base 2 emitter 3 collector APPLICATIONS DESCRIPTION • Switching and amplification in high voltage applications


    OCR Scan     		PDF OT323 PMST5401. PMST5550 PMST5551 PMST5550: PMST5551 OT323) transistor h 1061

    2N4896

    Abstract: 2N4897 2n4895
    Text: r Z 7 SGS-THOMSON 2N4895 ^ 7 # MtOtHKmKMMQS_ 2N4896/2N4897 HIGH CURRENT, FAST SWITCHING APPLICATIONS DESCRIPTIO N The 2N4895, 2N4896 and 2N4897 are silicon epi­ taxial planar NPN transistors in Jedec TO-3 metal case. They are intended for high current, fast switching


    OCR Scan     		PDF 2N4895 2N4896/2N4897 2N4895, 2N4896 2N4897 2N4895-2N489b-^ 2N4895-2N 4896-2N 2n4895