DDX-1080
Abstract: 1060 fet car mosfet audio amplifier diagram full bridge mosfet DDX-1050
Text: DDX-1080/DDX-1060/DDX-1050 All-Digital High Efficiency Power Amplifiers FEATURES • • PRODUCT OVERVIEW HIGH OUTPUT CAPABILITY DDX Full-Bridge Mode: * * * DDX-1080: 1 x 80 / 80 W, 6 / 8Ω, <10% THD DDX-1060: 1 x 62 / 80 W, 6 / 8Ω, <10% THD DDX-1050: 1 x 50 / 65 W, 6 / 8Ω, <10% THD
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DDX-1080/DDX-1060/DDX-1050
DDX-1080:
DDX-1060:
DDX-1050:
Rev02
DDX-1080
1060 fet
car mosfet audio amplifier diagram
full bridge mosfet
DDX-1050
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C30817E
Abstract: SILICON APD Pre-Amplifier
Text: DATASHEET Photon Detection C30659 Series 900/1060/1550/1550E Si and InGaAs APD Preamplifier Modules Key Features E C -1550E InGasAs APD Preamplifier Modules exhibit enhanced damage threshold and greater resilience when exposed to higher optical power densities.
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C30659
900/1060/1550/1550E
-1550E
C30817EH,
C30902EH,
C30954EH
C30956EH
C30645EH
C30662EH
C30817E
SILICON APD Pre-Amplifier
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diode d1n914
Abstract: d1n914 DIODE d1n914 C30817E C30659-1550-R2A InGaas PIN photodiode, 1550 NEP C30950 Silicon and InGaAs APD Preamplifier Modules C30954E avalanche photodiode 1550nm sensitivity
Text: 117142_C30659.qxd 6/21/04 2:33 PM Page 1 Preliminary Data Sheet C30659-900-1060-1550nm Series Silicon and InGaAs APD Preamplifier Modules Applications Range Finding LIDAR Featur es System bandwidth 50 MHz and 200 MHz Ultra low noise equivalent power NEP
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C30659
C30659-900-1060-1550nm
1100nm
1700nm
12-lead
C30817com.
diode d1n914
d1n914 DIODE
d1n914
C30817E
C30659-1550-R2A
InGaas PIN photodiode, 1550 NEP
C30950
Silicon and InGaAs APD Preamplifier Modules
C30954E
avalanche photodiode 1550nm sensitivity
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Untitled
Abstract: No abstract text available
Text: DATASHEET Photon Detection LLAM Series 900/1060/1550/1550E Si and InGaAs Low-Light Analog APD Receiver Modules LLAM Key Features E LLAM-1550E InGasAs APD Preamplifier Modules exhibit enhanced damage threshold and greater resilience when exposed to higher optical power densities.
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900/1060/1550/1550E
LLAM-1550E
12-lead
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C30817E
Abstract: No abstract text available
Text: 117142_C30659.qxd 6/21/04 2:33 PM Page 1 Preliminary Data Sheet C30659-900-1060-1550nm Series Silicon and InGaAs APD Preamplifier Modules Applications Range Finding LIDAR Featur es System bandwidth 50 MHz and 200 MHz Ultra low noise equivalent power NEP
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C30659
C30659-900-1060-1550nm
1100nm
1700nm
12-lead
C30om.
C30817E
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SII3132
Abstract: SII3132CNU gather capacitor power one pmp 7.24 111B 1.5G msi 9121 SiI-DS-0138-C 0xeb140101 MSI 7129 diagram MS 7125
Text: SiI-DS-0138-C Revision C 02 Feb 2007 SiI3132 PCI Express to Serial ATA Controller Data Sheet Silicon Image, Inc. 1060 East Arques Ave. Sunnyvale CA 94085 408 616-4000 www.siliconimage.com Copyright 2006, Silicon Image, Inc. All rights reserved. No part of this publication may be reproduced, transmitted,
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SiI-DS-0138-C
SiI3132
SII3132CNU
gather capacitor
power one pmp 7.24
111B 1.5G
msi 9121
0xeb140101
MSI 7129 diagram
MS 7125
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Untitled
Abstract: No abstract text available
Text: Low Cost 270 MHz Differential Receiver Amplifiers AD8129/AD8130 CONNECTION DIAGRAM High speed AD8130: 270 MHz, 1090 V/µs @ G = +1 AD8129: 200 MHz, 1060 V/µs @ G = +10 High CMRR 94 dB min, dc to 100 kHz 80 dB min @ 2 MHz 70 dB @ 10 MHz High input impedance: 1 MΩ differential
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AD8129/AD8130
AD8130:
AD8129:
AD8130,
AD8129,
AD8129/AD8130
C02464â
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AD8131
Abstract: AD8129 AD8129AR AD8130 AD8132
Text: a Low-Cost 270 MHz Differential Receiver Amplifiers AD8129/AD8130 FEATURES High Speed AD8130: 270 MHz, 1090 V/s @ G = 1 AD8129: 200 MHz, 1060 V/s @ G = 10 High CMRR 94 dB Min, DC to 100 kHz 80 dB Min @ 2 MHz 70 dB @ 10 MHz High-Input Impedance: 1 M⍀ Differential
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AD8129/AD8130
AD8130:
AD8129:
AD8130,
AD8129,
AD8129
C02464
AD8131
AD8129AR
AD8130
AD8132
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Untitled
Abstract: No abstract text available
Text: Low Cost 270 MHz Differential Receiver Amplifiers AD8129/AD8130 CONNECTION DIAGRAM High speed AD8130: 270 MHz, 1090 V/ s @ G = 1 AD8129: 200 MHz, 1060 V/μs @ G = 10 High CMRR 94 dB min, dc to 100 kHz 80 dB min @ 2 MHz 70 dB @ 10 MHz High input impedance: 1 MΩ differential
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AD8129/AD8130
AD8130:
AD8129:
AD8130,
AD8129,
AD8129/
AD8130
AD812d
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HSMS-2822
Abstract: P6245 TEK 461 AD8129 AD8129AR AD8130 AD8131 AD8132 analog devices branding HPA AD8130ARM2
Text: a Low Cost 270 MHz Differential Receiver Amplifiers AD8129/AD8130 FEATURES High Speed AD8130: 270 MHz, 1090 V/s @ G = 1 AD8129: 200 MHz, 1060 V/s @ G = 10 High CMRR 94 dB Min, DC to 100 kHz 80 dB Min @ 2 MHz 70 dB @ 10 MHz High Input Impedance: 1 M⍀ Differential
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AD8129/AD8130
AD8130:
AD8129:
AD8130,
AD8129,
AD8129
C02464
3/05--Data
HSMS-2822
P6245
TEK 461
AD8129AR
AD8130
AD8131
AD8132
analog devices branding HPA
AD8130ARM2
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Oasis SiliconSystems AG
Abstract: AD8132 AD8139 P6245 AD8129 AD8130 AD8131
Text: Low Cost 270 MHz Differential Receiver Amplifiers AD8129/AD8130 CONNECTION DIAGRAM High speed AD8130: 270 MHz, 1090 V/ s @ G = +1 AD8129: 200 MHz, 1060 V/μs @ G = +10 High CMRR 94 dB min, dc to 100 kHz 80 dB min @ 2 MHz 70 dB @ 10 MHz High input impedance: 1 MΩ differential
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AD8129/AD8130
AD8130:
AD8129:
AD8130,
AD8129,
AD8129/AD8130
C02464
Oasis SiliconSystems AG
AD8132
AD8139
P6245
AD8129
AD8130
AD8131
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PDF
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Untitled
Abstract: No abstract text available
Text: Low Cost 270 MHz Differential Receiver Amplifiers AD8129/AD8130 CONNECTION DIAGRAM High speed AD8130: 270 MHz, 1090 V/ s @ G = +1 AD8129: 200 MHz, 1060 V/μs @ G = +10 High CMRR 94 dB min, dc to 100 kHz 80 dB min @ 2 MHz 70 dB @ 10 MHz High input impedance: 1 MΩ differential
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AD8129/AD8130
AD8130:
AD8129:
AD8130,
AD8129,
AD8129/
AD8130
AD8129/AD8130
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Untitled
Abstract: No abstract text available
Text: 80 & 200 m InGaAs Avalanche Photodiode Preamplifier Module MICROELECTRONICS 264-339757-VAR Description CMC Electronics’ 264-339757-VAR are using a low noise InGaAs APD with an ionization ratio of 0.2 with a GaAs FET input transimpedance amplifier in a 12-lead TO-8 package. The
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264-339757-VAR
264-339757-VAR
12-lead
1000-1600nm
200um
Opto757-VAR
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tef 6624
Abstract: SEG382 Hitachi DSA002733 1301H
Text: HD66763 384-channel Segment Driver with Internal RAM for 256-color Displays Rev.1.0 July, 2001 Description The HD66763, 384-channel segment driver LSI, displays 128RGB-by-176-dot graphics on STN displays in 256 colors. It is for driving STN color LCD displays to a maximum of 128RGB by 176
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HD66763
384-channel
256-color
HD66763,
128RGB-by-176-dot
128RGB
HD66764
HD66763
16bit
tef 6624
SEG382
Hitachi DSA002733
1301H
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scr tic 1060
Abstract: tic 1060 BH 1060 TSI 568 HD6432655F REJ09B0331-0500 CMOS HD6432653 HD6472655F BCRH HD6432653
Text: REJ09B0331-0500 The revision list can be viewed directly by clicking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. H8S/2655 Group 16 Hardware Manual
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REJ09B0331-0500
H8S/2655
16-Bit
Family/H8S/2600
H8S/2655
H8S/2653
HD6432655
HD6472655
HD6432653
dama2730-6071
scr tic 1060
tic 1060
BH 1060
TSI 568
HD6432655F
REJ09B0331-0500
CMOS HD6432653
HD6472655F
BCRH
HD6432653
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free transistor equivalent book
Abstract: Nippon capacitors japan transistors book
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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H8S/2655
REJ09B0331-0500
free transistor equivalent book
Nippon capacitors
japan transistors book
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T4 1060
Abstract: SST29EE512-70-4I-NHE 32-PIN SST29EE512
Text: 512 Kbit 64K x8 Page-Write EEPROM SST29EE512 SST29EE512512Kb (x8) Page-Write, Small-Sector flash memories Data Sheet FEATURES: • Single Voltage Read and Write Operations – 4.5-5.5V for SST29EE512 • Superior Reliability – Endurance: 100,000 Cycles (typical)
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SST29EE512
SST29EE512512Kb
S71060
S71060-09-000
T4 1060
SST29EE512-70-4I-NHE
32-PIN
SST29EE512
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GLS29EE512
Abstract: GLS29EE512-70-4I-NH GLS29EE512-70-4I-NHE GLS29EE512-70-4C-NH GLS29EE512-70-4C-EHE 32-PIN GLS29EE512-70-4C-NHE GLS29EE512-70
Text: 512 Kbit 64K x8 Page-Write EEPROM GLS29EE512 GLS29EE512512Kb (x8) Page-Write, Small-Sector flash memories Data Sheet FEATURES: • Single Voltage Read and Write Operations – 4.5-5.5V for GLS29EE512 • Superior Reliability – Endurance: 100,000 Cycles (typical)
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GLS29EE512
GLS29EE512512Kb
S71060-10-000
GLS29EE512
GLS29EE512-70-4I-NH
GLS29EE512-70-4I-NHE
GLS29EE512-70-4C-NH
GLS29EE512-70-4C-EHE
32-PIN
GLS29EE512-70-4C-NHE
GLS29EE512-70
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sunplus LCD
Abstract: 001C SEG23 SPL15B1 4T128
Text: SPL15B1 72KB LCD CONTROLLER/DRIVER GENERAL DESCRIPTION FEATURES The SPL15B1 is a CMOS 8-bit single chip microprocessor which Built-in 8-bit CPU contains RAM, ROM, I/Os, interrupt controller, 8-bit PWM audio 128 bytes SRAM output and automatic display controller/driver for LCD.
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SPL15B1
SPL15B1
768KHz
sunplus LCD
001C
SEG23
4T128
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001C
Abstract: SEG23 SPL15B1
Text: S PL15B1 SP 7 2KB LCD Controller/Driver 72 AUG. 23, 2001 Version 1.2 SUNPLUS TECHNOLOGY CO. reserves the right to change this documentation without prior notice. Information provided by SUNPLUS TECHNOLOGY CO. is believed to be accurate and reliable. However, SUNPLUS TECHNOLOGY CO. makes no warranty for any errors which may appear in this document.
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SPL15B1
001C
SEG23
SPL15B1
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TM1060
Abstract: TELMOS INC h1080 TML1060 TML1060CCE
Text: <7 TML1060 FLASH CONVERTER TELMOS INC. September 1983 Features Description • • • • • • • The Model TML 1060 is a CMOS 6 bit parallel flash A/D converter designed for 7MHz sampling at low power levels. Although nominal power level is 150mW,
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TML1060CCE
TM1060
TELMOS INC
h1080
TML1060
TML1060CCE
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Untitled
Abstract: No abstract text available
Text: SN751730 TRIPLE LINE DRIVERS/RECEIVERS D3404, MAY 1060 Meets IBM 360/370 Input/Output Interface Specification for 4.5 Mb/s Operation D O R N PACKAGE TOP VIEW Single 5-V Supply DE1 [ 1 U i e ] V CC RI1 [ 2 15 ] D01 14 □ D ll R01 [ 3 Uncommitted Emltter-Follower Output
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SN751730
D3404,
1N3O04X2
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SD 1083
Abstract: SD1087 2SD1084 2sd1033 2SD1238 2sd1245 2SD987 2SD772B 2SD1706 2SD1134
Text: 230 - m « Type No. 2SD 1055 ^ =fet □— A 2SD 1059 ✓ 2SD 1060 2SD 1061 ^ 2SD 1062 2SD 1 0 6 3 * * é ?sn inß* , 2 SD 106 5 - 2 SD 1067 2SD 1069 € Manuf. m = = & E & E & E ß E Pß E # M 'S. 2SD 1070 2SD 1071 n±m m 2 SD 1072 m ±w » 2 SD 1073 « ± s «
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2SD1055
2SD1246
2SD613
2SD525
2SC2562
2SD843
2SD1137
2SD1134
2SD743
2SD568
SD 1083
SD1087
2SD1084
2sd1033
2SD1238
2sd1245
2SD987
2SD772B
2SD1706
2SD1134
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Untitled
Abstract: No abstract text available
Text: MwT-14 _ 12 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y • 2 WATT POWER OUTPUT AT 6 GHz • HIGH ASSOCIATED GAIN • 0.3 MICRON REFRACTORY METAI7GOLD GATE • 5 mm GATE WIDTH • DIAMOND-LIKE CARBON DLC PASSIVATION DESCRIPTION
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MwT-14
MwT-14
MvvT-14
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