MC34063 design examples
Abstract: mc34063 step down external transistor 24v to 12v converter using mc34063 schematic diagram mc34063 constant current led MC34063 current source mc34063 flyback flyback MC34063 MC34063 driver led MOTOROLA SEMICONDUCTOR mc34063 LPKL
Text: Order this document by AN920/D Rev. 2 MOTOROLA — SEMICONDUCTOR AN920 APPLICATION NOTE Rev. 2 Theory and Applications of the MC34063 and ~A78S4O Switching Regulator Control Circuits Prepared by Jade Alberkrack This paper describes in detail the principle of operation of the MC34063 and pA7SS4O switching regulator
|
Original
|
PDF
|
AN920/D
AN920
MC34063
A78S4O
A78S40
23905-2PRINTEO
lilt11111
MC34063 design examples
mc34063 step down external transistor
24v to 12v converter using mc34063
schematic diagram mc34063 constant current led
MC34063 current source
mc34063 flyback
flyback MC34063
MC34063 driver led
MOTOROLA SEMICONDUCTOR mc34063
LPKL
|
MC34063 5v
Abstract: MC34063 driver led motorola AN920 mc34063 AN920 MC34063 current source schematic SMPS 12V 20A PA78s LED DRIVER BY MC34063 flyback MC34063 MC34063 design examples
Text: Order this document by AN9201D Rev. 2 MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN920 Rev. 2 Theory and Applications of the MC34063 and PA78S40 Switching Regulator Control Circuits , -*{\!,>l\~ This paper describes in detail the principle of operation of the MC34063 and PA78S40 switching reg,Wl&@q}”>
|
Original
|
PDF
|
AN9201D
AN920
MC34063
PA78S40
MC34063 5v
MC34063 driver led
motorola AN920
mc34063 AN920
MC34063 current source
schematic SMPS 12V 20A
PA78s
LED DRIVER BY MC34063
flyback MC34063
MC34063 design examples
|
TRANSISTOR A107
Abstract: transistor A143 Transistor A119 TRANSISTOR A117 A124 transistor transistor a124 A124
Text: ARCH I V ED BY FREESCALE SEM I CON DU CT OR, I N C. 2 0 0 5 MOTOROLA Order this document by MRF6522–5/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF6522-5R1 N–Channel Enhancement–Mode Lateral MOSFET
|
Original
|
PDF
|
MRF6522â
MRF6522-5R1
TRANSISTOR A107
transistor A143
Transistor A119
TRANSISTOR A117
A124 transistor
transistor a124
A124
|
850C
Abstract: C7JC
Text: MV21O L Vvc + [– r I p-q-+” SEATING PLANE 1 3- 11111 K STYLE 1. PIN1. ANUUt 2. CATHODE DIM A A.A MI LLIMETERSI MIN I MAX 4.45 MAX 4.70 0.175 0.185 0.41 0.48 0.016 0.019 J 2.29 1270 2.79 – 0.090 0.500 0.110 - K CASE +radema,k of M~~orola ~MOTOROLA
|
Original
|
PDF
|
MV21O
10pAdc)
OS-855Z
850C
C7JC
|
MMVL2101T1
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMVL2101T1/D SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diode These devices are designed in the popular Plastic Surface Mount Package for high volume requirements of FM Radio and TV tuning and AFC, general frequency control
|
Original
|
PDF
|
MMVL2101T1/D
MMVL2101T1
MMVL2101T1
|
MMVL2101T1
Abstract: 106 CT motorola 65t marking
Text: MOTOROLA Order this document by MMVL2101T1/D SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diode These devices are designed in the popular Plastic Surface Mount Package for high volume requirements of FM Radio and TV tuning and AFC, general frequency control
|
Original
|
PDF
|
MMVL2101T1/D
MMVL2101T1
MMVL2101T1
106 CT motorola
65t marking
|
1N5456A
Abstract: motorola 986 1N5446ARL 1N5448ARL
Text: MOTOROLA Order this document by 1N5446ARL/D SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diodes 1N5446ARL 1N5448ARL 1N5456A These are epitaxial passivated abrupt junction tuning diodes designed for electronic tuning, FM, AFC and harmonic–generation applications in AM through UHF ranges,
|
Original
|
PDF
|
1N5446ARL/D
1N5446ARL
1N5448ARL
1N5456A
204AA)
1N5456A
motorola 986
1N5446ARL
1N5448ARL
|
1N5148
Abstract: 1N5148A 106 CT motorola
Text: MOTOROLA Order this document by 1N5148/D SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diodes 1N5148 1N5148A Designed for electronic tuning and harmonic–generation applications, and provide solid–state reliability to replace mechanical tuning methods. • Guaranteed High–Frequency Q
|
Original
|
PDF
|
1N5148/D
1N5148
1N5148A
1N5148
1N5148A
106 CT motorola
|
Untitled
Abstract: No abstract text available
Text: ARCH I V ED BY FREESCALE SEM I CON DU CT OR, I N C. 2 0 0 5 MOTOROLA Order this document by MRF185/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF185 RF Power Field-Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET • High Gain, Rugged Device
|
Original
|
PDF
|
MRF185/D
MRF185
|
sem 2005
Abstract: No abstract text available
Text: ARCH I V ED BY FREESCALE SEM I CON DU CT OR, I N C. 2 0 0 5 MOTOROLA Order this document by MRF6522–60/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF6522-60 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz and specified for the GSM 925 – 960 MHz band. The high
|
Original
|
PDF
|
MRF6522â
MRF6522-60
sem 2005
|
WY transistor
Abstract: wy 84 MCM67Q709A MCM67Q909 MCM69D536 MCM69D618
Text: Freescale Semiconductor, Inc. MOTOROLA Order this document by MCM69D536/D SEMICONDUCTOR TECHNICAL DATA MCM69D536 Freescale Semiconductor, Inc. 32K x 36 Bit Synchronous Dual I/O, Dual Address SRAM The MCM69D536 is a 1M–bit static random access memory, organized as 32K
|
Original
|
PDF
|
MCM69D536/D
MCM69D536
MCM69D536
WY transistor
wy 84
MCM67Q709A
MCM67Q909
MCM69D618
|
ax16 diode
Abstract: MCM63D736A
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MCM63D736A/D SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. 128K x 36 Bit Synchronous Dual I/O, Dual Address SRAM MCM63D736A The MCM63D736A is a 4M–bit static random access memory, organized as
|
Original
|
PDF
|
MCM63D736A/D
MCM63D736A
MCM63D736A
ax16 diode
|
Motorola diode SMD code B14
Abstract: smd diode code a30 SMD Transistor PD8 smd diode code a28 transistor SMD PB28 transistor A25 SMD Motorola diode SMD code B13 smd diode b13 smd code A9 3 pin transistor Motorola diode SMD code B12
Text: Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. O IC EM R, O CT U ND C IN . MPC821FADS S E AL C S E User’s Manual RE CH R A ED V I BY F Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
|
Original
|
PDF
|
MPC821FADS
74LCX08D
74LCX08D
S-8051HN-CD-X
S-8051
LM317MDT
LM317MD
768kHz,
30ppm,
16-Pin
Motorola diode SMD code B14
smd diode code a30
SMD Transistor PD8
smd diode code a28
transistor SMD PB28
transistor A25 SMD
Motorola diode SMD code B13
smd diode b13
smd code A9 3 pin transistor
Motorola diode SMD code B12
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMBV2101LT1/D SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diodes These devices are designed in the popular PLASTIC PACKAGE for high volume requirements of FM Radio and TV tuning and AFC, general frequency control and tuning applications.They provide solid–state reliability in replacement of mechanical
|
Original
|
PDF
|
MMBV2101LT1/D
MMBV2101LT1
MMBV2103LT1
MMBV2105LT1
MMBV2107LT1
MMBV2108LT1
MMBV2109LT1
MV2101
MV2104
MV2105
|
|
|
Untitled
Abstract: No abstract text available
Text: ARCH I V ED BY FREESCALE SEM I CON DU CT OR, I N C. 2 0 0 5 MOTOROLA Order this document by MRF187/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF187 MRF187R3 MRF187SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs
|
Original
|
PDF
|
MRF187/D
MRF187
MRF187R3
MRF187SR3
MRF187
MRF187R3
|
Untitled
Abstract: No abstract text available
Text: ARCH I V ED BY FREESCALE SEM I CON DU CT OR, I N C. 2 0 0 5 MOTOROLA Order this document by MRF186/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF186 RF Power Field-Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 800 MHz to 1.0 GHz. The high gain and broadband performance of this
|
Original
|
PDF
|
MRF186/D
MRF186
|
1N5441A
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA S ilic o n Tuning D iod es 1 N 5 4 46 A R L 1 N 5 4 48 A R L 1N 5456A These are epitaxial passivated abrupt junction tuning diodes designed for electronic tuning, FM, AFC and harmonic-generation applications in AM through UHF ranges,
|
OCR Scan
|
PDF
|
DO-204AA)
1N5446ARL
1N5448ARL
1N5456A
1N5441A
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC10E404 MC100E404 D ifferential D a nd Q 7 0 0 ps M ax. P ro pa g a tion D elay H igh Fre q ue n cy O utputs E xte n d ed 100E V E E R ange of -4.2V to -5.46V Internal 75ki2 Input P ulldow n R esistors QUAD DIFFERENTIAL
|
OCR Scan
|
PDF
|
MC10E404
MC100E404
75ki2
|
1N5148A
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diodes 1N5148 1N5148A Designed for electronic tuning and harmonic-generation applications, and provide solid-state reliability to replace mechanical tuning methods. • Guaranteed High-Frequency Q • Guaranteed Wide Tuning Range
|
OCR Scan
|
PDF
|
1N5148
1N5148A
1N5148A
|
cq 447
Abstract: diode CQ 745
Text: MOTOROLA Order th is docum ent by 1N5148/D SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diodes 1N5148 1N5148A Designed for electronic tuning and harmonic-generation applications, and provide solid-state reliability to replace mechanical tuning methods. • Guaranteed High-Frequency Q
|
OCR Scan
|
PDF
|
1N5148/D
1N5148
1N5148A
b3b72SS
cq 447
diode CQ 745
|
APPLE A4
Abstract: APPLE A5 CHIP km 1667 Nippon capacitors
Text: MPC106EC/D Motorola Order Number 5/98 REV 1 PowerPC Advance Information MPC106 PCI Bridge/Memory Controller Hardware Specifications The Motorola MPC106 PCI bridge/memory controller provides a PowerPC microprocessor common hardware reference platform (CHRP™) compliant bridge
|
OCR Scan
|
PDF
|
MPC106EC/D
MPC106
Ove-8488
106EC
APPLE A4
APPLE A5 CHIP
km 1667
Nippon capacitors
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information 256KB Secondary Cache Module With Tag and Optional Dirty for 486 Processor Systems MCM32N864 MCM32N865 MCM32P864 MCM32P865 These 256K Byte cache modules offer dual asynchronous 32K x 32 banks of memory. There is a 16K x 8 tag memory for main memory cacheability up to 64
|
OCR Scan
|
PDF
|
256KB
MCM32N865
MCM32P865
MCM32N864
MCM32P864
|
MV2107
Abstract: BV2108 MV2113 BV-2108
Text: MOTOROLA SEMICONDUCTOR MMBV2101L thru MMBV2109L MV2101 thru MV2115 TECHNICAL DATA W V O L T A G E -V A R IA B L E C A PA C ITA N C E D IO D ES C 6.8-100 pF 30 VOLTS SILIC O N EPIC A P D IO D ES % C A S E 318-07 TO-236AB SOT-23 MMBV2101L thru MMBV2109L C A SE 182-02
|
OCR Scan
|
PDF
|
MMBV2101L
MMBV2109L
MV2101
MV2115
O-236AB
OT-23
MMBV2109L
MV2107
BV2108
MV2113
BV-2108
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by 1N5446ARL/D SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diodes 1N5446ARL 1N5448ARL 1N 5456A These are epitaxial passivated abrupt junction tuning diodes designed for electronic tuning, FM, AFC and harmonic-generation applications in AM through UHF ranges,
|
OCR Scan
|
PDF
|
1N5446ARL/D
1N5446ARL
1N5448ARL
1N5446ARUD
|
