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    Nisshinbo Micro Devices RP105N071B-TR-FE

    IC REG LINEAR 0.7V 400MA SOT23-5
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    DigiKey RP105N071B-TR-FE Reel 3,000
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    • 10000 $0.44329
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    Mouser Electronics RP105N071B-TR-FE
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    Nisshinbo Micro Devices RP105N071D-TR-FE

    IC REG LINEAR 0.7V 400MA SOT23-5
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RP105N071D-TR-FE Reel 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.44329
    		Buy Now
    Mouser Electronics RP105N071D-TR-FE
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.426
    		Get Quote

    105N07 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    110N06

    Abstract: 9000 044 053 siemens 110N07 P8000
    Text: HiPerFETTM Power MOSFETs VDSS IXFK 110 N06 IXFK 105 N07 IXFK 110 N07 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions VDSS TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; RGS = 1 MW VGS VGSM Maximum Ratings N07 N06 N07


    Original     		PDF ID130 150OC 100OC 110N06 9000 044 053 siemens 110N07 P8000

    C1162

    Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
    Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)


    Original     		PDF O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1162 C1280 26n60 60N25 C1328 120N20 C1146 C1104 C1158

    9000 044 053 siemens

    Abstract: 110N07
    Text: HiPerFETTM Power MOSFETs VDSS IXFK 110 N06 IXFK 105 N07 IXFK 110 N07 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions VDSS TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; RGS = 1 MW VGS VGSM Maximum Ratings N07 N06 N07


    Original     		PDF O-264 ID130 150OC 100OC 9000 044 053 siemens 110N07

    C1146

    Abstract: C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60
    Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)


    Original     		PDF O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1146 C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60

    TO-264 Jedec package outline

    Abstract: ID130 110N07
    Text: HiPerFETTM Power MOSFETs VDSS IXFK 110 N06 IXFK 105 N07 IXFK 110 N07 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions VDSS TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; RGS = 1 MW VGS VGSM Maximum Ratings N07 N06 N07


    Original     		PDF O-264 ID130 150OC 100OC TO-264 Jedec package outline ID130 110N07

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS HiPerFET VDSS Power MOSFETs IXFK 110 N06 IXFK 105 N07 IXFK 110 N07 N -C h an n el E n h a n ce m e n t M ode A v a la n c h e R ated, High dv/dt, L o w trr Symbol TestConditions v DSS Tj = 25°C to 150°C v DGR Td = 25°C to 150°C; RGS = 1 M£i


    OCR Scan     		PDF O-264 110N06 105N07 110N07