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    Samsung Electro-Mechanics CL10B105MO8NNWC

    CAP CER 1UF 16V X7R 0603
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    DigiKey CL10B105MO8NNWC Digi-Reel 581,904 1
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    CL10B105MO8NNWC Cut Tape 581,904 1
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    CL10B105MO8NNWC Reel 580,000 4,000
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    Mouser Electronics CL10B105MO8NNWC 142,532
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    Newark CL10B105MO8NNWC Reel 48,000 4,000
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    CL10B105MO8NNWC Cut Tape 3,519 1
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    Samsung Electro-Mechanics CL03A105MO3NRNH

    CAP CER 1UF 16V X5R 0201
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    DigiKey CL03A105MO3NRNH Cut Tape 438,282 1
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    CL03A105MO3NRNH Digi-Reel 438,282 1
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    Mouser Electronics CL03A105MO3NRNH 579,125
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    Samsung Electro-Mechanics CL03A105MO3NRNC

    CAP CER 1UF 16V X5R 0201
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    DigiKey CL03A105MO3NRNC Cut Tape 44,380 1
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    CL03A105MO3NRNC Digi-Reel 44,380 1
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    CL03A105MO3NRNC Reel 40,000 10,000
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    Mouser Electronics CL03A105MO3NRNC 145,252
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    Samsung Electro-Mechanics CL14A105MO8NANC

    CAP ARRAY 1.0UF 16V X5R 0504
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    DigiKey CL14A105MO8NANC Digi-Reel 1
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    Samsung Electro-Mechanics CL05A105MO5NNNC

    CAP CER 1UF 16V X5R 0402
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    105MO Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    5a6 zener diode

    Abstract: dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415
    Text: Subscriber Linecard Table of Contents DATA LINE, Ethernet. 3 DATA LINE, Optical


    Original
    Si4418DY 130mOhm@ Si4420BDY Si6928DQ 35mOhm@ Si6954ADQ 53mOhm@ SiP2800 SUM47N10-24L 24mOhm@ 5a6 zener diode dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415 PDF

    MOSFET P channel SOT-23

    Abstract: MOSFET P-channel SOT-23 mosfet vgs 5v P-Channel MOSFET 12V SOT 23 sot-23 P-Channel MOSFET ST2305
    Text: P Channel Enchancement Mode MOSFET ST2305 -3.5A DESCRIPTION The ST2305 is the P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


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    ST2305 ST2305 OT-23-3L -10V/-3 50m-ohm 70m-ohm -10V/-2rn-On OT-23-3L MOSFET P channel SOT-23 MOSFET P-channel SOT-23 mosfet vgs 5v P-Channel MOSFET 12V SOT 23 sot-23 P-Channel MOSFET PDF

    tag 8442

    Abstract: paladin 172 410 rg213 au COAXIAL CABLE raychem termination kit PRICE filotex rg213 NSR 2051 PL155-47 2576 cable filotex RG58 filotex et
    Text: 1753 Technical portal and online community for Design Engineers - www.element-14.com Connectors - RF Coaxial Page Adaptors and Accessories . . . . . . . . . . . . . . . . . . BNC Economy Series . . . . . . . . . . . . . . . . . . . . . . BNC Series . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original
    element-14 14x14mm: tag 8442 paladin 172 410 rg213 au COAXIAL CABLE raychem termination kit PRICE filotex rg213 NSR 2051 PL155-47 2576 cable filotex RG58 filotex et PDF

    n-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR

    Abstract: ST3402 MOSFET SOT-23 mosfet vgs 5v
    Text: N Channel Enhancement Mode MOSFET ST3402 4.0A DESCRIPTION The ST3402 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance.


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    ST3402 ST3402 OT-23-3L 50m-ohm 65m-ohm OT-23-3L n-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR MOSFET SOT-23 mosfet vgs 5v PDF

    ST3403

    Abstract: No abstract text available
    Text: P Channel Enchancement Mode MOSFET ST3403 -3.5A DESCRIPTION The ST3403 is the P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


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    ST3403 ST3403 OT-23-3L -30V/-2 105m-ohm 115m-ohm -4OT-23-3L PDF

    Untitled

    Abstract: No abstract text available
    Text: STN6562 Dual N Channel Enhancement Mode MOSFET 4.0A DESCRIPTION The STN6562 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are


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    STN6562 STN6562 65mohm 75mohm 105mohm STP6562 PDF

    Untitled

    Abstract: No abstract text available
    Text: STP6506 Dual P Channel Enhancement Mode MOSFET -2.8A DESCRIPTION The STC6506 is the dual P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching


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    STP6506 STC6506 -30V/-2 105mohm STP6506 PDF

    MOSFET NOTEBOOK

    Abstract: ST2304 25a surface mountain
    Text: N Channel Enchancement Mode MOSFET ST2304 2.5A DESCRIPTION The ST2304 is the N-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


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    ST2304 ST2304 OT-23-3L 70m-ohm 105m-ohm OT-23-3L MOSFET NOTEBOOK 25a surface mountain PDF

    TCA160

    Abstract: BY164 Mullard C296 TAA310A TAA435 TAA700 TBA550 TBA480 PCC88 TAA300
    Text: MULLARD DATA BOOK 1973-74 ER R A TA A U G U S T 1973 j\ 1 d - ^ Mullard Limited Renewal Sales Department Mullard House Torrington Place London WC1E 7HD N / , S E M IC O M D U C Type No. Page No. AC187 13 Correction Delete minus signs to read: *IC = 300m A;


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    AC187 BC157 BC158 BC159 BC186 BC187 BD201 BD202 BD203 BD204 TCA160 BY164 Mullard C296 TAA310A TAA435 TAA700 TBA550 TBA480 PCC88 TAA300 PDF

    Untitled

    Abstract: No abstract text available
    Text: NP 111 SERIES PGA 2.54mm pitch •Outline Dimensions FEATURES • ZIF (zero insertion force) sockets for PGA packages. • Low profile design. • Designed for universal pin patterns by pin removal. SPECIFICATIONS i PERFORMANCE it p r r \_ L . , t n t r r .


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    105MO 500VDC 700VAC UL94V-0 11X11, 15X15, 19X19, 21X21 PDF

    250HCA

    Abstract: No abstract text available
    Text: I 148 Series Metallized Polyproplyene I Axial Leads Axial Leads Close CapacitanceTolerances Available Tape and Reel MallorY Total Self Inductance L : 1nH maximum per 1mm lead and capacitor length GENERAL SPECIFICATIONS Operating Temperature: -55°C to +105°C with voltage


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    UL510 UL94V0 10x10-4for0 500MF 1284/Indianapolis 46206-1284/Phone: 273-0090/Fax: 250HCA PDF

    DIL Reed relay RS -349-399

    Abstract: LK NES IEC 292-1 ECG transistor replacement guide book free electrode oven calibration certificate formats dl-1d31 1a. 250v /reed relay rs 349-355 LCD LM 225X Ferroxcube pot core 6656 Semicon volume 1 l/DIL Reed relay RS -349-399 Siemens Optoelectronic Data Book
    Text: Issued November 1987 8420 Data Library Contents list and semiconductor device type index Data library contents Subject Title Number Communications Equipment B.T. telephone connection system Digital compact paging system Escort 2 + 6 telephone switching system


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    Triac TAG 9022

    Abstract: Transistor TEO 1279 DIL Reed relay RS -349-399 AKO 544 271 tda 7977 Triac TAG 9031 RS 434-396 TV SHARP IC TDA 9381 PS hall marking code A04 px625
    Text: Issued November 1986 7376 r Contents list and semiconductor device type index data Data library contents Issue Date Subject Title Number Communications Equipment B.T. telephone connection system Digital compact paging system 'Minimaster 3' 2+10 telephone switching system


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