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    1038 MOSFET Search Results

    1038 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    1038 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transformer winding formula step down

    Abstract: EF25 transformer resistor 2m2 EF25 ferrite transformer ungapped IR2156 notes capacitor 220uF 50v IR2156 IR21592 dimmer circuit diagram for input 5v to 300v output EF25 bobbin
    Text: Application Note AN-1038 Low Voltage DC Supply Dimmable Ballast for 1 x 36W T8 Lamp By Peter Green, Senior Lighting Systems Engineer Table of Contents Page Introduction .1


    Original     		PDF AN-1038 470pF 100uF 100nF transformer winding formula step down EF25 transformer resistor 2m2 EF25 ferrite transformer ungapped IR2156 notes capacitor 220uF 50v IR2156 IR21592 dimmer circuit diagram for input 5v to 300v output EF25 bobbin

    AP3039

    Abstract: AP3608
    Text: Application Note 1038 WLED Backlighting Solution for Medium LCD Panel Designed with AP3608E+AP3039 Prepared by Yuan Shan Shan, Han Lu System Engineering Dept. 1. Introduction solution for medium LCD panel under this condition. With the enhancement of environment-protecting


    Original     		PDF AP3608E AP3039 AP3039 AP3608

    SS550

    Abstract: 948S
    Text: ON Semiconductor Selector Guide − Power MOSFET Products MOSFET − Surface Mount 2.5 V/2.7 V* 1.8 V QT Typ nC @ VGS = 4.5 V (5.0 V)/10 V* 0.052 0.072 0.12 12 −3.7 0.96 0.085 0.12 0.21 7.5 −3.2 0.20 0.35 −1.3 −1.0 RDS(on) Max (W) @ VGS = VDSS (V)


    Original     		PDF OT-23 NTGS3433 NTGS3443 NTGS3441 NTGS4111P NTGS3455 NTGS3446 NUD3048MT1 NTR2101P NTR4101P SS550 948S

    6P02

    Abstract: ZXM66P02N8 ZXM66P02N8TA ZXM66P02N8TC
    Text: ZXM66P02N8 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY BR DSS=-20V; RDS(ON)=0.025 D=-8.0A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching


    Original     		PDF ZXM66P02N8 ZXM66P02N8TA ZXM66P02N8TC INFORMATI64-7630 6P02 ZXM66P02N8 ZXM66P02N8TA ZXM66P02N8TC

    6P02

    Abstract: ZXM66P02N8 ZXM66P02N8TA ZXM66P02N8TC
    Text: ZXM66P02N8 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY BR DSS=-20V; RDS(ON)=0.025 D=-8.0A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching


    Original     		PDF ZXM66P02N8 ZXM66P02N8TA ZXM66P02N8TC 6P02 ZXM66P02N8 ZXM66P02N8TA ZXM66P02N8TC

    Mosfet

    Abstract: SSPL2015
    Text: SSPL2015 200V N-Channel MOSFET Main Product Characteristics VDSS 200V RDS on 0.13ohm(typ.) ID 18A ① TO - 220 Schematic Diagram Marking and Pin Assignment Features and Benefits   Advanced Process Technology Special designed for PWM, load switching and


    Original     		PDF SSPL2015 13ohm O-220 to175 Mosfet SSPL2015

    diode bs 9300

    Abstract: lvt 817 Automatic Railway Gate Control system, PD9002 U3158 jan,tx series semiconductors 2n2369 die smd code marking a3a SMD-05 smd diodes s4 1.5w
    Text: IRFNJ9130 IRF9130SMD05 MECHANICAL DATA Dimensions in mm inches 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 3.175 (0.125) Max. 2.41 (0.095) P–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS 3 5.72 (.225) 0.76 (0.030) min. 1 2 VDSS ID(cont) RDS(on) 10.16 (0.400)


    Original     		PDF IRFNJ9130 IRF9130SMD05 -100V SMD05 O-276AA) IRFNJ9130 IRF9130SMD05DSG" IRF9130SMD05DSG O276AA) diode bs 9300 lvt 817 Automatic Railway Gate Control system, PD9002 U3158 jan,tx series semiconductors 2n2369 die smd code marking a3a SMD-05 smd diodes s4 1.5w

    2N2369 equivalent

    Abstract: No abstract text available
    Text: IRFNJ9130 IRF9130SMD05 MECHANICAL DATA Dimensions in mm inches 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 3.175 (0.125) Max. 2.41 (0.095) P–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS 3 5.72 (.225) 0.76 (0.030) min. 1 2 VDSS ID(cont) RDS(on) 10.16 (0.400)


    Original     		PDF IRFNJ9130 IRF9130SMD05 -100V SMD05 O-276AA) O276AA) 860pF IRF9130SMD05DGS 2N2369 equivalent

    dk 434

    Abstract: No abstract text available
    Text: APTM100UM45D-AlN Single switch with Series diode MOSFET Power Module SK VDSS = 1000V RDSon = 45mΩ max @ Tj = 25°C ID = 215A @ Tc = 25°C Application D G DK DK S D SK G • Zero Current Switching resonant mode Features • Power MOS 7 MOSFETs - Low RDSon


    Original     		PDF APTM100UM45D-AlN dk 434

    Untitled

    Abstract: No abstract text available
    Text: APTM100UM45DAG Single switch with Series diode MOSFET Power Module SK S D G DK S VDSS = 1000V RDSon = 45m typ @ Tj = 25°C ID = 215A @ Tc = 25°C Application • Zero Current Switching resonant mode Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance


    Original     		PDF APTM100UM45DAG

    APT0502

    Abstract: APT0601 APTM100UM45DAG max1814
    Text: APTM100UM45DAG Single switch with Series diode MOSFET Power Module SK S D G DK Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance


    Original     		PDF APTM100UM45DAG APT0502 APT0601 APTM100UM45DAG max1814

    APT0502

    Abstract: APT0601 APTM100UM45DAG
    Text: APTM100UM45DAG VDSS = 1000V RDSon = 45mΩ typ @ Tj = 25°C ID = 215A @ Tc = 25°C Single switch with Series diode MOSFET Power Module SK S D G DK S DK Application • Zero Current Switching resonant mode Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance


    Original     		PDF APTM100UM45DAG APT0502 APT0601 APTM100UM45DAG

    Untitled

    Abstract: No abstract text available
    Text: APTM100UM45FAG VDSS = 1000V RDSon = 45m typ @ Tj = 25°C ID = 215A @ Tc = 25°C Single Switch MOSFET Power Module SK D S DK G S Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features


    Original     		PDF APTM100UM45FAG

    Untitled

    Abstract: No abstract text available
    Text: APTM100UM45DAG Single switch with Series diode MOSFET Power Module SK VDSS = 1000V RDSon = 45mΩ typ @ Tj = 25°C ID = 215A @ Tc = 25°C Application S D G DK S Zero Current Switching resonant mode Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance


    Original     		PDF APTM100UM45DAG

    NS6040

    Abstract: apt 2100
    Text: APTM100UM45F-AlN VDSS = 1000V RDSon = 45mΩ typ @ Tj = 25°C ID = 215A @ Tc = 25°C Single Switch MOSFET Power Module SK S D DK G S Features • Power MOS 7 FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode


    Original     		PDF APTM100UM45F-AlN NS6040 apt 2100

    Untitled

    Abstract: No abstract text available
    Text: APTM100UM45F-AlN VDSS = 1000V RDSon = 45mΩ max @ Tj = 25°C ID = 215A @ Tc = 25°C Single Switch MOSFET Power Module SK S D DK G S Features • Power MOS 7 FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode


    Original     		PDF APTM100UM45F-AlN

    133 Diode

    Abstract: 66P02 ZXM66P02N8 ZXM66P02N8TA
    Text: A Product Line of Diodes Incorporated ZXM66P02N8 20V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits V BR DSS RDS(on) ID -20V 0.025Ω -8.0A • High pulse current handling in linear mode


    Original     		PDF ZXM66P02N8 DS31965 133 Diode 66P02 ZXM66P02N8 ZXM66P02N8TA

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXM66P02N8 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(on) ID -20V 0.025Ω -8.0A • High pulse current handling in linear mode • Low on-resistance • Fast switching speed


    Original     		PDF ZXM66P02N8 DS31965

    20S60

    Abstract: AOTF20S60L AOB20S60L
    Text: AOT20S60/AOB20S60/AOTF20S60 600V 20A MOS Power Transistor General Description Product Summary The AOT20S60& AOB20S60 & AOTF20S60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC


    Original     		PDF AOT20S60/AOB20S60/AOTF20S60 AOT20S60& AOB20S60 AOTF20S60 AOT20S60L AOB20S60L AOTF20S60L O-220 O-220F O-263 20S60 AOTF20S60L AOB20S60L

    marking code g1s

    Abstract: No abstract text available
    Text: BF 1012 SIEMENS Silicon N-Channel MOSFET Tetrode ’ For low-rioise, gain-controlled input stages up to 1GHz •Operating voltage 12V 1Integrated bias network X Oroin 0 -J-G 2 AGC HF o Input G1 1 HF Output + DC > " J gñd" ESD : Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF Q62702-F1487 T-143 800MHz marking code g1s

    G2 marking

    Abstract: G2 MARKING CODE
    Text: SÌ1026X Vishay Siliconix New Product N-Channel 60 -V D-S MOSFET TrenchFET MOSFET PRODUCT SUMMARY V(BR)OSS(min) (V) 60 rDS(on)(ö ) V GS(th) 1.40 @ VGs = 10 V (V) lD (m A ) 1 to 2.5 500 ESD Protected 2000 V FEATURES • • • • • • BENEFITS APPLICATIONS


    OCR Scan     		PDF 1026X SC-89 S-03518-- 23-Apr-01 G2 marking G2 MARKING CODE

    1038 MOSFET

    Abstract: No abstract text available
    Text: SSF22N50A Advanced Power MOSFET FEATURES BVdss = 500 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 p A Max. @ VDS= 500V


    OCR Scan     		PDF SSF22N50A 1038 MOSFET

    soc 1041

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS30SM-3 HIGH-SPEED SWITCHING USE FS30SM-3 OUTLINE DRAWING Dimensions in mm 15.9MAX. . 4 .5 . 1.5 öT “Ü "T 0 3.2 1.0 , 5.45 5.45 0.6 2.8 • 10V DRIVE • V dss . 150 V


    OCR Scan     		PDF FS30SM-3 110ns soc 1041

    B 1038 superior

    Abstract: irfp9240
    Text: PD-9.481C International IrâRi Rectifier IRFP9240 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements Description


    OCR Scan     		PDF IRFP9240 O-247 O-218 B 1038 superior irfp9240