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    1030 PULSED Search Results

    1030 PULSED Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4162F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4206F Toshiba Electronic Devices & Storage Corporation Intelligent power device 500V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    UC1847J/B Rochester Electronics LLC UC1847 - PWM Visit Rochester Electronics LLC Buy

    1030 PULSED Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Emitter

    Abstract: APG2C1-1030
    Text: APG2C1-1030 IR High Power single chip LED APG2C1-1030 is a GaAlAs based, high power 1030 nm single chip LED in standard emitter package for general application. Specifications • • • • • Structure: GaAlAs Peak Wavelength: 1030 nm Optical Output Power: typ. 60 mW


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    APG2C1-1030 APG2C1-1030 Emitter PDF

    J264

    Abstract: No abstract text available
    Text: ITC1100 1000 WATT, 50V, Pulsed Avionics 1030 MHz GENERAL DESCRIPTION CASE OUTLINE 55SW, Style 1 Common Base The ITC1100 is a common base bipolar transistor. It is designed for pulsed interrogator systems in the frequency band of 1030 MHz. The device has gold


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    ITC1100 ITC1100 1030MHz, J264 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1011LD110 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION CASE OUTLINE 55QZ-1 Common Source The 1011LD110 is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 110 Wpk of RF power from 1030 to 1090


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    1011LD110 55QZ-1 1011LD110 PDF

    1030MHz-1090MHz

    Abstract: No abstract text available
    Text: 10502 500 Watts, 50 Volts, Pulsed Avionics 1030 / 1090 MHz GENERAL DESCRIPTION CASE OUTLINE 55SM Common Base The 10502 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030/1090 MHz, with the pulse width


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    25oC1 1030MHz 1090MHz 1030MHz-1090MHz PDF

    transistor DF 50

    Abstract: transistor 1000W 1030mhz 1000W TRANSISTOR ITC1100 1000W TRANSISTOR POWER
    Text: R.1.120799 ITC1100 1000 WATT, 50V, Pulsed Avionics 1030 MHz GENERAL DESCRIPTION CASE OUTLINE 55SW, Style 1 Common Base The ITC1100 is a common base bipolar transistor. It is designed for pulsed interrogator systems in the frequency band of 1030 MHz. The device has gold


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    ITC1100 ITC1100 1030MHz, transistor DF 50 transistor 1000W 1030mhz 1000W TRANSISTOR 1000W TRANSISTOR POWER PDF

    1030MHz-1090MHz

    Abstract: 1030mhz
    Text: 10502 500 Watts, 50 Volts, Pulsed Avionics 1030 / 1090 MHz GENERAL DESCRIPTION CASE OUTLINE 55SM Common Base The 10502 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030/1090 MHz, with the pulse width


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    25oC1 1030MHz 1090MHz 1030MHz-1090MHz 1030mhz PDF

    TCS1200

    Abstract: 55TU-1
    Text: TCS1200 1200 Watts, 53 Volts Pulsed Avionics at 1030 MHz PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55TU-1 The TCS1200 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems at 1030 MHz, with the pulse width and duty


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    TCS1200 55TU-1 TCS1200 55TU-1 PDF

    1030

    Abstract: MDS170L 1030 PULSED
    Text: MDS170L 170 Watts, 36 Volts, Pulsed Avionics 1030/1090 MHz GENERAL DESCRIPTION The MDS170L is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030 - 1090 MHz. The transistor includes input and output prematch for broadband performance. The


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    MDS170L MDS170L 25oC2 1030 1030 PULSED PDF

    1011LD300

    Abstract: "RF MOSFET" 300W
    Text: 1011LD300 300 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION CASE OUTLINE 55QM Common Source The 1011LD300 is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 300 Wpk of RF power from 1030 to 1090


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    1011LD300 1011LD300 "RF MOSFET" 300W PDF

    f-1030-1090

    Abstract: No abstract text available
    Text: 1011LD110 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION CASE OUTLINE 55QZ-1 Common Source The 1011LD110 is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 110 Wpk of RF power from 1030 to 1090


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    1011LD110 1011LD110 55QZ-1 f-1030-1090 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1011LD200 200 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION CASE OUTLINE 55QX-1 Common Source The 1011LD200 is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 200 Wpk of RF power from 1030 to 1090


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    1011LD200 1011LD200 55QX-1 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1011LD300 300 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION CASE OUTLINE 55QM Common Source The 1011LD300 is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 300 Wpk of RF power from 1030 to 1090


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    1011LD300 1011LD300 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1011LD200 200 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION CASE OUTLINE 55QX-1 Common Source The 1011LD200 is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 200 Wpk of RF power from 1030 to 1090


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    1011LD200 55QX-1 1011LD200 PDF

    df transistor

    Abstract: 55KT
    Text: TPR 500A 500 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz GENERAL DESCRIPTION The TPR 500A is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization and diffused ballasting for proven


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    25oC2 1750ower df transistor 55KT PDF

    "RF MOSFET" 300W

    Abstract: No abstract text available
    Text: 1011LD300 300 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION CASE OUTLINE 55QM Common Source The 1011LD300 is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 300 Wpk of RF power from 1030 to 1090


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    1011LD300 1011LD300 1011L300 "RF MOSFET" 300W PDF

    1011LD200

    Abstract: 1090MHZ
    Text: 1011LD200 200 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION CASE OUTLINE 55QX-1 Common Source The 1011LD200 is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 200 Wpk of RF power from 1030 to 1090


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    1011LD200 55QX-1 1011LD200 1090MHZ PDF

    1011LD110

    Abstract: No abstract text available
    Text: 1011LD110 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION CASE OUTLINE 55QZ-1 Common Source The 1011LD110 is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 110 Wpk of RF power from 1030 to 1090


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    1011LD110 55QZ-1 1011LD110 PDF

    TPR500

    Abstract: No abstract text available
    Text: TPR 500 500 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz GENERAL DESCRIPTION The TPR 500 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization for proven highest MTTF. The


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    25oC2 TPR500 TPR500 PDF

    TPR400

    Abstract: max7540
    Text: TPR 400 400 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz GENERAL DESCRIPTION The TPR 400 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization for proven highest MTTF. The


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    25oC2 TPR400 TPR400 max7540 PDF

    df transistor

    Abstract: 1000W TRANSISTOR 1030mhz ITC1000 DF 1 transistor 1000W
    Text: R.A.P.990305-BEHRE ITC1000 1000 WATT, 50V, Pulsed Avionics 1030 MHz GENERAL DESCRIPTION CASE OUTLINE 55SW, Style 1 Common Base The ITC1000 is a common base bipolar transistor. It is designed for pulsed interrogator systems in the frequency band of 1030 MHz. The device has gold


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    990305-BEHRE ITC1000 ITC1000 1030MHz, df transistor 1000W TRANSISTOR 1030mhz DF 1 transistor 1000W PDF

    transistor A 1030

    Abstract: 1030 PULSED
    Text: MDS550L 550 Watts, 45 Volts Pulsed Avionics at 1030/1090 MHz PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55ST-1 Common Base The MDS550L is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems at 1030 and 1090 MHz, with the pulse width and


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    MDS550L MDS550L 55ST-1 transistor A 1030 1030 PULSED PDF

    1458

    Abstract: TCS600
    Text: R.1.A.992005-HERICK TCS600 600 Watts, 50 Volts, Pulsed Avionics 1030 MHz GENERAL DESCRIPTION CASE OUTLINE 55ST Style 1 The TCS600 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030/1090 MHz, with the


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    992005-HERICK TCS600 TCS600 Volta25 1458 PDF

    j329

    Abstract: J3-29 duroid 5880 20AWG TPR400A J251
    Text: TPR400A 400 Watts, 50 Volts, Pulsed Avionics 1030-1090 MHz GENERAL DESCRIPTION The TPR400A is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization for proven highest MTTF. Low


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    TPR400A TPR400A 25oC2 150oC 200oC 20AWG, 10mils j329 J3-29 duroid 5880 20AWG J251 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary PTVA101K02EV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz Description The PTVA101K02EV LDMOS FET is designed for use in power ampliier applications in the 1030 MHz / 1090 MHz frequency band.


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    PTVA101K02EV PTVA101K02EV H-36275-4 PDF