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    APM HEXSEAL R10-24X9/16 2701

    Screws & Fasteners 10-24X9/16", Phillips Pan Head, 18-8 Stainless Steel with Silicone O-Ring, Seal Screw
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    Mouser Electronics R10-24X9/16 2701 22
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    • 1000 $0.467
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    LCMXO2-1200HC-4TG100C

    Abstract: LCMXO2-256HC-4TG100I LCMXO2-1200 tn1200 lcmxo2 LCMXO2-1200HC-4TG100 LCMXO2-2000 LCMXO2-7000 MachXO2-1200 LCMXO2-4000HC
    Text: MachXO2 Family Handbook HB1010 Version 01.0, November 2010 MachXO2 Family Handbook Table of Contents November 2010 Section I. MachXO2 Family Data Sheet Introduction Features . 1-1


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    PDF HB1010 LCMXO2-1200HC-4TG100C LCMXO2-256HC-4TG100I LCMXO2-1200 tn1200 lcmxo2 LCMXO2-1200HC-4TG100 LCMXO2-2000 LCMXO2-7000 MachXO2-1200 LCMXO2-4000HC

    Untitled

    Abstract: No abstract text available
    Text: SN74ACT2235 1024x9x2 ASYNCHRONOUS BIDIRECTIONAL FIRST-IN, FIRST-OUT MEMORY SCAS148E - DECEMBER 1990 - REVISED APRIL 1998 • Independent Asynchronous Inputs and Outputs • Access Times of 25 ns With a 50-pF Load • Data Rates up to 50 MHz • Low-Power Advanced CMOS Technology


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    PDF SN74ACT2235 1024x9x2 SCAS148E 50-pF 44-Pin 64-Pin

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    Abstract: No abstract text available
    Text: 67C4502-35/50/65/80 a Deep First-in First-out FIFO 1024x9 C M O S Memory o> O .u cn DISTINCTIVE CHARACTERISTICS M Retransmit capability Expandable in both width an djtepth Increased noise immunity for XI • CMOS threshold Functional and pin compatible with industry


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    PDF 67C4502-35/50/65/80 1024x9 67C4502

    Untitled

    Abstract: No abstract text available
    Text: 57C4502-50/65/80 High Density First-in First-out FIFO 1024x9 CMOS Memory cn ~>l O Advance Information DISTINCTIVE CHARACTERISTICS RAM based FIFO 1024x9 organization Cycle times of 65/80/100 nanoseconds Asynchronous and simultaneous writes and reads Low power consumption - 80 mA maximum


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    PDF 57C4502-50/65/80 1024x9 57C4502

    AM7202

    Abstract: No abstract text available
    Text: A d v a n c e In f o r m a t i o n Advanced Micro Devices Am7202-40/50/65/80 High Density First-in First-out FIFO 1024x9 CM O S Memory DISTINCTIVE CHARACTERISTICS • RAM based FIFO Status flags - full, half-full, empty • 1024x9 organization Retransmit capability


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    PDF Am7202-40/50/65/80 1024x9 Am7202

    Z/tda 7281

    Abstract: No abstract text available
    Text: CMOS DUAL ASYNCHRONOUS FIFO DUAL 256 x 9, DUAL 512 x 9, DUAL 1024x9 IDT7280 IDT7281 IDT7282 PRELIMINARY INFORMATION FEATURES: • • • • • • • • • • • • The 7280 is equivalent to tw o 7200 256x9 FIFOs The 7281 is equivalent to tw o 7201 512x9 FIFOs


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    PDF 1024x9 IDT7280 IDT7281 IDT7282 256x9 512x9 1024x9 IDT7280/7281/7282 4A2S771 0G2D42fl Z/tda 7281

    AM7202

    Abstract: am7202-25
    Text: Advanced Micro Devices Am7202-25/35/50/65/80 CMOS First-In First Out FIFO 1024x9-Bit Buffer DISTINCTIVE CHARACTERISTICS • RAM based FIFO Status flags - full, half-full, empty • 1024x9 organization Retransmit capability • Cycle times of 35/45/65/80/100 nanoseconds


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    PDF Am7202-25/35/50/65/80 1024x9 1024x9-Bit Am7202 am7202-25

    Untitled

    Abstract: No abstract text available
    Text: 2048x 9-BitRFO- Radiation Hardened 7203ERP CMOS epi Parallel Cascadeable FIFO DATA INPUTS ‘ D O -0 8 For Space Applications Ü WRITE POINTER s . RAM ARRAY 512x9 1024x9 2040x9 K= READ POINTER UJ-L1I I,I THREE El's 7 2 0 3 ERP (RP for STATE BUFFERS RAD-PAK ) high speed


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    PDF 2048x 7203ERP 512x9 1024x9 2040x9 7203ERP CY7C429 TD11241

    Untitled

    Abstract: No abstract text available
    Text: KM75C02A CMOS FIFO First-in First-out FIFO 1024x9 CMOS Memory FEATURES DESCRIPTION • F irst-in, F irs t-o u t dual p o rt m em ory — 1024 x 9 organization • Very high speed independent o f de p th /w id th — 20 ns cycle tim es • Asynchronous and sim ultaneous read and w rite


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    PDF KM75C02A 1024x9

    Untitled

    Abstract: No abstract text available
    Text: DALLAS SEMICONDUCTOR DS2010 1024x9 FIFO Chip PIN ASSIGNMENT FEATURES • First-in, first-out memory-based architecture W C 1* 28 □ V C C 27 □ D4 • Flexible 1024 x 9 organization D SC 2 D3C 3 • Low-power HCMOS technology D 2Ü 4 24 • Asychronous and simultaneous read/write


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    PDF 120ns DS2010 1024x9 DS2010 DS2009 2bl4130 0001b5b

    d1607

    Abstract: S2010
    Text: O S2010 DALLAS SEMICONDUCTOR DS2010 1024x9 FIFO Chip FEATURES PIN ASSIG NM ENT • First-in, first-out memory-based architecture C 1» DBC 2 D3C 3 W • Flexible 1024 x 9 organization • Low-power H C M O S technology D2C D iC DOC XI c FFC • Asychronous and simultaneous read/write


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    PDF S2010 120ns DS2010 1024x9 32-Pin S2010 DS2009 d1607

    Untitled

    Abstract: No abstract text available
    Text: VIT EL IC CORP Tö VITELIC ¿'Ëj 1SD531D □□□□35b .0 | T-V6-35 PRELIMINARY V61C03 FAMILY HIGH PERFORMANCE LOW POWER 1024x9 CMOS PARALLEL FIFO MEMORY Features I • Specifications are the same as V61C01/02 except as listed. ■ First-In/First-Out Memory


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    PDF 1SD531D T-V6-35 V61C03 1024x9 V61C01/02 V61C03

    Untitled

    Abstract: No abstract text available
    Text: 67C4502-35/50/65/80 a Deep First-in First-out FIFO 1024x9 CMOS Memory Oi O cn to 1 DISTINCTIVE CHARACTERISTICS w U) Dì Retransmit capability Expandable in both width and depth Increased noise immunity for XI - CMOS threshold RAM based FIFO 1024x9 organization


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    PDF 67C4502-35/50/65/80 1024x9 67C4502

    Untitled

    Abstract: No abstract text available
    Text: european space agency agence spatiale européenne Pages 1 to 66 INTEGRATED CIRCUITS, SILICON MONOLITHIC, CMOS SILICON GATE, STATIC 9K 1024x9 BIT FIRST IN, FIRST OUT MEMORY WITH 3-STATE OUTPUTS, BASED ON TYPE M67202FV ESA/SCC Detail Specification No. 9301/032


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    PDF 1024x9 M67202FV CKBD-000

    Untitled

    Abstract: No abstract text available
    Text: Am99Cl9 1 0 2 4 x 9 First-In/First-Out FIFO ADVANCE INFORMATION First-In/First-Out dual-port memory 1024x9 organization Fast cycle time - 45 ns typical • Fast throughput time > 20 MHz • Expandable by both word depth and/or bit width • Empty, half-full, and fullwarning flags


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    PDF Am99Cl9 Am99C19 1024x9 28-pln 600-inch) 28-pin

    Untitled

    Abstract: No abstract text available
    Text: 67C4502-35/50/65/80 Deep First-in First-out FIFO 1024x9 CMOS Memory a s DISTINCTIVE CHARACTERISTICS RAM based FIFO 1024x9 organization Cycle tim es of 45/65/80/100 nanoseconds Asynchronous and simultaneous writes and reads Retransmit capability Expandable in both width andjtepth


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    PDF 67C4502-35/50/65/80 1024x9 67C4502

    Untitled

    Abstract: No abstract text available
    Text: 67C4502-35/50/65/80 Deep First-in First-out FIFO 1024x9 C M O S Memory a o> -vl O 4* in DISTINCTIVE CHARACTERISTICS o in Retransmit capability Expandable in both width and depth Increased noise immunity for XI • CMOS threshold Functional and pin compatible with industry


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    PDF 67C4502-35/50/65/80 1024x9 67C4502

    D426

    Abstract: No abstract text available
    Text: Advanced Micro Devices Am7202A High Density First-In First-Out FIFO 1024x9-Bit CMOS Memory DISTINCTIVE CHARACTERISTICS • ■ ■ RAM based FIFO 1024x9 organization ■ Cycle times of 40/65 nanoseconds for APL products Asynchronous and simultaneous writes


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    PDF Am7202A 1024x9-Bit 1024x9 4430-016A D426

    Untitled

    Abstract: No abstract text available
    Text: 67C4502-35/50/65/80 Deep First-in First-out FIFO 1024x9 C M O S Memory a o> O .u cn DISTINCTIVE CHARACTERISTICS Retransmit capability Expandable in both width an djtepth Increased noise immunity for XI • CMOS threshold Functional and pin compatible with industry


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    PDF 67C4502-35/50/65/80 1024x9 67C4502

    high level block diagram for asynchronous FIFO

    Abstract: DIP28-W-300 LH540202 LJH540202
    Text: LH540202 CMOS 1024 X 9 Asynchronous FIFO FEATURES FUNCTIONAL DESCRIPTION • Fast Access Times: 15/20/25/35/50 ns The LH540202 is a FIFO First-In, First-Out memory device, based onfully-staticCMOSdual-portSRAM tech­ nology, capable of storing up to 1024 nine-bit words. It


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    PDF LH540202 LH5497 ArrVIDT/MS7202 LH5497H 28-Pin, 300-mil 32-Pin 32PLCC high level block diagram for asynchronous FIFO DIP28-W-300 LH540202 LJH540202

    Untitled

    Abstract: No abstract text available
    Text: 3.3 VOLT DUAL CMOS SyncFlFO DUAL 256 x 9, DUAL 512 x 9, DUAL 1,024 x 9, DUAL 2,048 x 9, DUAL 4,096 x 9 Integrated D ev ice TechnoJogy, S c . FEATURES: • The IDT72V801 is equivalent to two IDT72V201 256 x 9 FIFOs • The IDT72V811 is equivalent to two IDT72V211 5 1 2 x 9 FIFOs


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    PDF IDT72V801 IDT72V201 IDT72V811 IDT72V211 IDT72V821 IDT72V221 IDT72V831 IDT72V231 IDT72V841 IDT72V241

    Untitled

    Abstract: No abstract text available
    Text: BUS-MATCHING BIDIRECTIONAL FIFO 512 x 1 8 -B IT -1024 x 9-BIT 1024 x 18-BIT - 2048 x 9-BIT Integrated D evice Technology, Inc. IDT72510 IDT72520 FEATURES: DESCRIPTION: • Two side-by-side FIFO memory arrays for bidirectional data transfers • 512 x 18-Bit - 1024 x 9-Bit IDT72510


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    PDF 18-BIT IDT72510 IDT72520 IDT72510) IDT72520) 18-to-9-bit, 36-to-9-bit,

    Untitled

    Abstract: No abstract text available
    Text: 3.3 Volt CMOS DUAL ASYNCHRONOUS FIFO IDT72V81 DUAL 512 X 9, DUAL 1024 x 9 IDT72V82 PRELIMINARY INFORMATION Integrated Device Technology, Inc. FEATURES: single package with all associated control, data, and flag lines assigned to separate pins. The devices use Full and Empty


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    PDF IDT72V81 IDT72V82 2S771 D027n3 IDT72V81/72V82 S056-2) 72V81 72V82

    CY7C428-65PC

    Abstract: CY7C419 CY7C421 CY7C425 CY7C429 CY7C433 IDT7200 IDT7201 IDT7202 IDT7203
    Text: fax id: 5404 CY7C419/21/25/29/33 -= C Y P R E S S 256/512 /1K /2K/4K x 9 Asynchronous FIFO Features • • • • • • • • • • • • • • • Asynchronous first-in first-out FIFO buffer memories 256 x 9 (CY7C419) 512 x 9 (CY7C421) 1 K x 9 (CY7C425)


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    PDF CY7C419/21/25/29/33 CY7C419) CY7C421) CY7C425) CY7C429) CY7C433) 300-mil 600-mil IDT7200, IDT7201, CY7C428-65PC CY7C419 CY7C421 CY7C425 CY7C429 CY7C433 IDT7200 IDT7201 IDT7202 IDT7203