SOP 8 200MIL
Abstract: serial flash 256Mb fast erase spi TM 1628 IC SOP Micron 512MB NOR FLASH HN29V1G91T-30 HN58C1001FPI-15 M5M51008DFP-70HI 256mb EEPROM Memory CSP-48 TSOP 28 SPI memory Package flash
Text: Renesas Memory General Catalog 2003.11 Renesas Memory General Catalog Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with
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D-85622
REJ01C0001-0100Z
SOP 8 200MIL
serial flash 256Mb fast erase spi
TM 1628 IC SOP
Micron 512MB NOR FLASH
HN29V1G91T-30
HN58C1001FPI-15
M5M51008DFP-70HI
256mb EEPROM Memory
CSP-48
TSOP 28 SPI memory Package flash
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IBM "embedded dram"
Abstract: m5m4v4169 Intel 1103 DRAM Nintendo64 IBM98 toshiba fet databook dynamic memory controler MOSYS eDRAM "1t-sram" MoSys
Text: ABSTRACT MODERN DRAM ARCHITECTURES by Brian Thomas Davis Co-Chair: Assistant Professor Bruce Jacob Co-Chair: Professor Trevor Mudge Dynamic Random Access Memories DRAM are the dominant solid-state memory devices used for primary memories in the ubiquitous microprocessor systems of
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conn95]
64-Mbit
Woo00]
EE380
class/ee380/
Wulf95]
Xanalys00]
Yabu99]
IBM "embedded dram"
m5m4v4169
Intel 1103 DRAM
Nintendo64
IBM98
toshiba fet databook
dynamic memory controler
MOSYS eDRAM
"1t-sram"
MoSys
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MSM6389C
Abstract: SAS controller chip MSM6389CJS
Text: E2D0033-39-21 ¡ Semiconductor MSM6389C ¡ Semiconductor This version: MSM6389C Feb. 1999 Previous version: May. 1997 1,048,576-Word x 1-Bit Solid-State Recorder Data Register GENERAL DESCRIPTION The MSM6389C is a solid-state recorder data register in 1,048,576 words x 1 bit configuration.
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E2D0033-39-21
MSM6389C
576-Word
MSM6389C
SAS controller chip
MSM6389CJS
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MSM6596A
Abstract: MSM6388 MSM6389 MSM6588 SSOP30-P-56-0
Text: E2D0039-39-21 This version: Feb. 1999 MSM6596A-xxx Previous version: May. 1997 ¡ Semiconductor MSM6596A-xxx ¡ Semiconductor 2-Mbit Serial Voice ROM GENERAL DESCRIPTION The MSM6596A is the shorter-TAT processing version of the MSM6596. The MSM6596A is a serial voice ROM with a 1,048,576-word ¥ 1-bit ¥ 2-bank configuration.
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E2D0039-39-21
MSM6596A-xxx
MSM6596A
MSM6596.
576-word
MSM6388
MSM6389
MSM6588
SSOP30-P-56-0
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HN58X2508FPIE
Abstract: HN58X2508I HN58X2508TIE HN58X2516FPIE HN58X2516I HN58X2516TIE
Text: HN58X2508I HN58X2516I Serial Peripheral Interface 8k EEPROM 1024-word x 8-bit 16k EEPROM (2048-word × 8-bit) Electrically Erasable and Programmable Read Only Memory REJ03C0222-0200 Rev.2.00 Aug.19.2004 Description HN58X25xxx Series is the Serial Peripheral Interface (SPI) EEPROM (Electrically Erasable and
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HN58X2508I
HN58X2516I
1024-word
2048-word
REJ03C0222-0200
HN58X25xxx
32-byte
HN58X2508FPIE
HN58X2508I
HN58X2508TIE
HN58X2516FPIE
HN58X2516I
HN58X2516TIE
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Untitled
Abstract: No abstract text available
Text: Fo r t une Semiconductor Corporation 富晶半導體股份有限公司 FS9168 8-bit MCU with 1k program ROM, 64-byte RAM, 1 R2F module and 3 x 13 LCD driver. Data Sheet TD-0410001 Rev. 1.2 This manual contains new product information. Fortune Semiconductor Corporation reserves the rights to
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FS9168
64-byte
TD-0410001
CR-004
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TMS320C6713pyp
Abstract: SPRS186 TMS320C6713 ccfg C6713 SPRU190 TMS320C6000 TMS320C6713 TMS320C6713B TMS320c6713 hpi mcbsp
Text: TMS320C6713, TMS320C6713B Digital Signal Processors Silicon Errata C6713 Silicon Revision 1.1 C6713B Silicon Revision 2.0 SPRZ191G December 2002 Revised May 2004 Copyright 2004, Texas Instruments Incorporated TMS320C6713, TMS320C6713B Silicon Errata SPRZ191G
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TMS320C6713,
TMS320C6713B
C6713
C6713B
SPRZ191G
TMS320C6713B
TMS320C6713pyp
SPRS186
TMS320C6713 ccfg
SPRU190
TMS320C6000
TMS320C6713
TMS320c6713 hpi
mcbsp
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Untitled
Abstract: No abstract text available
Text: USER’S GUIDE LSI403LP Digital Signal Processor April 2004 DB15-000230-02 This document contains proprietary information of LSI Logic Corporation. The information contained herein is not to be used by or disclosed to third parties without the express written permission of an officer of LSI Logic Corporation.
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LSI403LP
DB15-000230-02
DB15-000230-02,
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HE8P1603P
Abstract: HE8P1603S P12W hxosc
Text: HE8P1603 HE8P1603 PRODUCT SPECIFICATION 1. GENERAL DESCRIPTION . 3 2. FEATURES . 3
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HE8P1603
HE8P1603
HE8P1603P
HE8P1603S
P12W
hxosc
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S590
Abstract: S-29530A S-29590A S-29590ADPA S-29630A S-29690A S-29690ADPA S-29X90A S690
Text: Contents Features. 1 Pin Assignment . 1 Pin Functions . 1 Block Diagram. 2
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SPH-002T-P0.5S
Abstract: motorolla processor DSP56000 DSP56300 DSP56307 DSP56L307
Text: Order Number EB361/D: Rev. 1, 3/2001 MOTOROLA Semiconductor Products Sector Engineering Bulletin Functional Differences Between the Motorola DSP56307 and DSP56L307 The DSP56307 and DSP56L307, two members of the Motorola DSP56300 family of programmable digital signal processors
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EB361/D:
DSP56307
DSP56L307
DSP56L307,
DSP56300
DSP56000
EB361/D
SPH-002T-P0.5S
motorolla processor
DSP56L307
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SN74ACT8994
Abstract: PIN CONFIGURATION pci 32 bit 5 v
Text: SN74ACT8994 DIGITAL BUS MONITOR IEEE STD 1149.1 JTAG SCAN-CONTROLLED LOGIC/SIGNATURE ANALYZER SCAS196E – JULY 1990 – REVISED DECEMBER 1996 D D D D D D D Member of the Texas Instruments SCOPE Family of Testability Products Compatible With the IEEE Standard
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SN74ACT8994
SCAS196E
1024-Word
16-Bit
SN74ACT8994
PIN CONFIGURATION pci 32 bit 5 v
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BR24L04
Abstract: BR24L08 BR24L08FJ-W BR24L08FVM-W BR24L08FV-W BR24L08F-W BR24L08-W BR24L16
Text: BR24L08-W / BR24L08F-W / BR24L08FJ-W BR24L08FV-W / BR24L08FVM-W Memory ICs 1024x8 bit electrically erasable PROM BR24L08-W / BR24L08F-W / BR24L08FJ-W / BR24L08FV-W / BR24L08FVM-W The BR24L08-W series is 2-wire I2C BUS type serial EEPROMs which are electrically programmable.
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BR24L08-W
BR24L08F-W
BR24L08FJ-W
BR24L08FV-W
BR24L08FVM-W
BR24L08FJ-W
BR24L04
BR24L08
BR24L08FVM-W
BR24L16
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intel 2758 eprom
Abstract: MSM2128 MSM2758
Text: C - f2- * i - 003831 sem iconductor *MSM2758 MARCH 1980 | •i i 8,192-B IT 1024 X 8 UV ERASABLE PROM GENERAL DESCRIPTION FEATURES The Oki M SM2758 is a 8192-bit ultraviolet erasable and electrical program m able read-only memory organized as 1024words by 8-bits using O ki’s Floating Gate N-channei S ilicon Gate
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MSM2758
192-BIT
8192-bit
1024-words
24-pin
S1980
intel 2758 eprom
MSM2128
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MB7122
Abstract: MB7100 MB7122E LCC-20C-F02 MB712 MB7122E-W 1024-words eutec
Text: APR 2 1993 June 1990 Edition 3.0 FUJITSU DATA SHEET MB7122E-W/L-W PROGRAMMABLE SCHOTTKY 4096-BIT READ ONLY MEMORY SCHOTTKY 4096-BIT DEAP PROM 1024WORDS X 4BITS The Fujitsu MB7122-W is high speed Schottky TTL electrically field programmable read only memory organized as 1024words by 4bits. With three-state outputs on
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MB7122E-W/L-W
4096-BIT
1024WORDS
MB7122-W
MB7122,
MB7122
MB7100
MB7122E
LCC-20C-F02
MB712
MB7122E-W
1024-words
eutec
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HN25088L
Abstract: HN25089L Hitachi Scans-001
Text: H N 2 5 8 8 L , H N 2 5 Ö 9 L 1024-word x 8-bit Programmable Read Only Memories The H IT A C H I H N 2 5 0 8 8 L and H N 2 5 0 8 9 L are lo w po w e r and high speed e le c tric a lly program m able, fu lly decoded T T L B ip o la r 8192 b it read o n ly m em ories organized as 1024 w ord s b y 8 bits w ith onc h ip address decoding and fo u r c h ip enable inputs.
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HN25088L,
HN25089L
1024-word
HN25088L
HN25089L
100ns
350mW
70max
Hitachi Scans-001
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high level block diagram for asynchronous FIFO
Abstract: DIP28-W-300 LH540202 LJH540202
Text: LH540202 CMOS 1024 X 9 Asynchronous FIFO FEATURES FUNCTIONAL DESCRIPTION • Fast Access Times: 15/20/25/35/50 ns The LH540202 is a FIFO First-In, First-Out memory device, based onfully-staticCMOSdual-portSRAM tech nology, capable of storing up to 1024 nine-bit words. It
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LH540202
LH5497
ArrVIDT/MS7202
LH5497H
28-Pin,
300-mil
32-Pin
32PLCC
high level block diagram for asynchronous FIFO
DIP28-W-300
LH540202
LJH540202
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Untitled
Abstract: No abstract text available
Text: 57C4502-50/65/80 High Density First-in First-out FIFO 1024x9 CMOS Memory cn ~>l O Advance Information DISTINCTIVE CHARACTERISTICS RAM based FIFO 1024x9 organization Cycle times of 65/80/100 nanoseconds Asynchronous and simultaneous writes and reads Low power consumption - 80 mA maximum
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57C4502-50/65/80
1024x9
57C4502
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Untitled
Abstract: No abstract text available
Text: Am27S35/Am27S37 8,192-Bit 1024x8 Bipolar Registered PROM with Programmable INITIALIZE Input Versatile programmable asynchronous or synchronous enable for simplified word expansion Buffered common INITIALIZE input either asynchronous (Am27S35) or synchronous (Am27S37)
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Am27S35/Am27S37
192-Bit
1024x8)
24-pin,
300-mil
Am27S35
Am27S37
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Untitled
Abstract: No abstract text available
Text: H I T A C H I / LOGIC/ARRAYS/MEN TS D Ë | 44=11,203 0010=135 b | ~ 92D H M I 0 0 4 7 4 , H M 1 4 7 4 F 10932 -^ T -4 6 -2 3 -0 8 1 0 2 4 - w o r d x 4 - b i t F u lly D e c o d e d R a n d o m A c c e s s M e m o r y The H M 100474 is a 1024-words x 4-bit, read/write, random access
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1024-words
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Untitled
Abstract: No abstract text available
Text: DOC BU-61590 ILC DATA DEVICE CORPORATION — MIL-STD-1553A/B & Me AIR BC/RT/MT, ADVANCED COMMUNICATION ENGINE ACE FEATURES DESCRIPTION DDC’s BU-61590 BC/RT/MT Universal Advanced C om m unication Engine (ACE) terminal comprises a complete integrated interface between a host
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BU-61590
MIL-STD-1553A/B
BU-61590
BU61590
78-pin
1553B,
A3818,
A5232,
A5690
15/-15v
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HD63183
Abstract: No abstract text available
Text: Under Development H D63185- D ocum ent Im age Com pression and Expansion Processor Enhanced DICEP-E DICEP-E is an LSI th a t perform s com pression (encoding) and expansion (decoding) of 2value d a ta used to rep resen t a docum ent image. It is positioned a t th e high en d of th e
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D63185---------
HD63085)
HD63183)
HD63183
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HM 1211
Abstract: HM2110 HM2110-1 Jj-80
Text: H M 2 1 1 0 , H M 2 1 1 0 -1 1 0 2 4 - w o rd x 1 - b i t F u lly D e c o d e d R a n d o m A c c e s s M e m o ry The H M 21 10 Series item is an ECL compatible, 1024-word x 1-bit, read/write, random access memory developed for application to scratch pads, control and buffer memories, etc. which require high
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HM2110,
1024-word
HM2110
HM2110:
HM2110-1:
jj-80%
HM2110-1
HM2110
HM 1211
HM2110-1
Jj-80
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ic 2114
Abstract: 2114 static ram memory ic 2114 pin out
Text: SEMI 2114 STATIC, TTL IN/OUT 1024x4 N-MOS RAM's FEATURES • 1024 words x 4 bits • Three access times 200, 300, and 450 nsec • Low operating power — 175 mW typical • Common output bus • Three-state output drivers • Fully STATIC — no clock or refresh
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1024x4
18-pin
ic 2114
2114 static ram
memory ic 2114 pin out
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