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    Essentra Components 0601024WNA

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    DigiKey 0601024WNA Bulk 990 1
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    TDK-Lambda Corporation PXC-M10-24WS24-A

    DC DC CONVERTER 24V 10W
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    DigiKey PXC-M10-24WS24-A Tube 642 1
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    Essentra Components 0601024WN

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    TDK-Lambda Corporation PXD10-24WS12

    DC DC CONVERTER 12V 10W
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    DigiKey PXD10-24WS12 Bulk 269 1
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    TDK-Lambda Corporation PXC-M10-24WS12-A

    DC DC CONVERTER 12V 10W
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    DigiKey PXC-M10-24WS12-A Tube 201 1
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    1024W Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SLAA012

    Abstract: Data-Sheet TLC2543
    Text: TLC2543C, TLC2543I, TLC2543M 12-BIT ANALOG-TO-DIGITAL CONVERTERS WITH SERIAL CONTROL AND 11 ANALOG INPUTS SLAS079E – DECEMBER 1993 – REVISED JUNE 2000 D D D D D DB, DW, J, OR N PACKAGE TOP VIEW AIN0 AIN1 AIN2 AIN3 AIN4 AIN5 AIN6 AIN7 AIN8 GND 1 20 2


    Original     		PDF TLC2543C, TLC2543I, TLC2543M 12-BIT SLAS079E 12-Bit-Resolution TLC2543MJB 59629688601QRA TLC2543EVM TLC2543 SLAA012 Data-Sheet TLC2543

    Untitled

    Abstract: No abstract text available
    Text: TLV2543C, TLV2543I 12-BIT ANALOG-TO-DIGITAL CONVERTERS WITH SERIAL CONTROL AND 11 ANALOG INPUTS SLAS096C – MARCH 1995 – REVISED JUNE 2000 D D D D D D D D D D D D D 12-Bit-Resolution A/D Converter 10-µs Conversion Time Over Operating Temperature Range


    Original     		PDF TLV2543C, TLV2543I 12-BIT SLAS096C 12-Bit-Resolution

    SOP 8 200MIL

    Abstract: serial flash 256Mb fast erase spi TM 1628 IC SOP Micron 512MB NOR FLASH HN29V1G91T-30 HN58C1001FPI-15 M5M51008DFP-70HI 256mb EEPROM Memory CSP-48 TSOP 28 SPI memory Package flash
    Text: Renesas Memory General Catalog 2003.11 Renesas Memory General Catalog Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with


    Original     		PDF D-85622 REJ01C0001-0100Z SOP 8 200MIL serial flash 256Mb fast erase spi TM 1628 IC SOP Micron 512MB NOR FLASH HN29V1G91T-30 HN58C1001FPI-15 M5M51008DFP-70HI 256mb EEPROM Memory CSP-48 TSOP 28 SPI memory Package flash

    IBM "embedded dram"

    Abstract: m5m4v4169 Intel 1103 DRAM Nintendo64 IBM98 toshiba fet databook dynamic memory controler MOSYS eDRAM "1t-sram" MoSys
    Text: ABSTRACT MODERN DRAM ARCHITECTURES by Brian Thomas Davis Co-Chair: Assistant Professor Bruce Jacob Co-Chair: Professor Trevor Mudge Dynamic Random Access Memories DRAM are the dominant solid-state memory devices used for primary memories in the ubiquitous microprocessor systems of


    Original     		PDF conn95] 64-Mbit Woo00] EE380 class/ee380/ Wulf95] Xanalys00] Yabu99] IBM "embedded dram" m5m4v4169 Intel 1103 DRAM Nintendo64 IBM98 toshiba fet databook dynamic memory controler MOSYS eDRAM "1t-sram" MoSys

    MSM6389C

    Abstract: SAS controller chip MSM6389CJS
    Text: E2D0033-39-21 ¡ Semiconductor MSM6389C ¡ Semiconductor This version: MSM6389C Feb. 1999 Previous version: May. 1997 1,048,576-Word x 1-Bit Solid-State Recorder Data Register GENERAL DESCRIPTION The MSM6389C is a solid-state recorder data register in 1,048,576 words x 1 bit configuration.


    Original     		PDF E2D0033-39-21 MSM6389C 576-Word MSM6389C SAS controller chip MSM6389CJS

    MSM6596A

    Abstract: MSM6388 MSM6389 MSM6588 SSOP30-P-56-0
    Text: E2D0039-39-21 This version: Feb. 1999 MSM6596A-xxx Previous version: May. 1997 ¡ Semiconductor MSM6596A-xxx ¡ Semiconductor 2-Mbit Serial Voice ROM GENERAL DESCRIPTION The MSM6596A is the shorter-TAT processing version of the MSM6596. The MSM6596A is a serial voice ROM with a 1,048,576-word ¥ 1-bit ¥ 2-bank configuration.


    Original     		PDF E2D0039-39-21 MSM6596A-xxx MSM6596A MSM6596. 576-word MSM6388 MSM6389 MSM6588 SSOP30-P-56-0

    HN58X2508FPIE

    Abstract: HN58X2508I HN58X2508TIE HN58X2516FPIE HN58X2516I HN58X2516TIE
    Text: HN58X2508I HN58X2516I Serial Peripheral Interface 8k EEPROM 1024-word x 8-bit 16k EEPROM (2048-word × 8-bit) Electrically Erasable and Programmable Read Only Memory REJ03C0222-0200 Rev.2.00 Aug.19.2004 Description HN58X25xxx Series is the Serial Peripheral Interface (SPI) EEPROM (Electrically Erasable and


    Original     		PDF HN58X2508I HN58X2516I 1024-word 2048-word REJ03C0222-0200 HN58X25xxx 32-byte HN58X2508FPIE HN58X2508I HN58X2508TIE HN58X2516FPIE HN58X2516I HN58X2516TIE

    Untitled

    Abstract: No abstract text available
    Text: Fo r t une Semiconductor Corporation 富晶半導體股份有限公司 FS9168 8-bit MCU with 1k program ROM, 64-byte RAM, 1 R2F module and 3 x 13 LCD driver. Data Sheet TD-0410001 Rev. 1.2 This manual contains new product information. Fortune Semiconductor Corporation reserves the rights to


    Original     		PDF FS9168 64-byte TD-0410001 CR-004

    TMS320C6713pyp

    Abstract: SPRS186 TMS320C6713 ccfg C6713 SPRU190 TMS320C6000 TMS320C6713 TMS320C6713B TMS320c6713 hpi mcbsp
    Text: TMS320C6713, TMS320C6713B Digital Signal Processors Silicon Errata C6713 Silicon Revision 1.1 C6713B Silicon Revision 2.0 SPRZ191G December 2002 Revised May 2004 Copyright  2004, Texas Instruments Incorporated TMS320C6713, TMS320C6713B Silicon Errata SPRZ191G


    Original     		PDF TMS320C6713, TMS320C6713B C6713 C6713B SPRZ191G TMS320C6713B TMS320C6713pyp SPRS186 TMS320C6713 ccfg SPRU190 TMS320C6000 TMS320C6713 TMS320c6713 hpi mcbsp

    Untitled

    Abstract: No abstract text available
    Text: USER’S GUIDE LSI403LP Digital Signal Processor April 2004 DB15-000230-02 This document contains proprietary information of LSI Logic Corporation. The information contained herein is not to be used by or disclosed to third parties without the express written permission of an officer of LSI Logic Corporation.


    Original     		PDF LSI403LP DB15-000230-02 DB15-000230-02,

    HE8P1603P

    Abstract: HE8P1603S P12W hxosc
    Text: HE8P1603 HE8P1603 PRODUCT SPECIFICATION 1. GENERAL DESCRIPTION . 3 2. FEATURES . 3


    Original     		PDF HE8P1603 HE8P1603 HE8P1603P HE8P1603S P12W hxosc

    intel 2758 eprom

    Abstract: MSM2758 INTEL 24 PIN CERAMIC DUAL-IN-LINE PACKAGE 1024-words msm2128 2758 eprom
    Text: MARCH 1980 | 003831 semiconductor t -3 J 3 I MSM2758 8,192-BIT 1024 X 8 UV ERASABLE PROM GENERAL DESCRIPTION FEATURES The Oki MSM2758 is a 8192-bit ultraviolet erasable and electrical program m able read-only m emory organized as 1024w ords by 8-bits using O ki's Floating Gate N-channe7 Silicon Gate


    OCR Scan     		PDF MSM2758 192-BIT 8192-bit 1024-words 24-pin intel 2758 eprom INTEL 24 PIN CERAMIC DUAL-IN-LINE PACKAGE msm2128 2758 eprom

    intel 2758 eprom

    Abstract: MSM2128 MSM2758
    Text: C - f2- * i - 003831 sem iconductor *MSM2758 MARCH 1980 | •i i 8,192-B IT 1024 X 8 UV ERASABLE PROM GENERAL DESCRIPTION FEATURES The Oki M SM2758 is a 8192-bit ultraviolet erasable and electrical program m able read-only memory organized as 1024words by 8-bits using O ki’s Floating Gate N-channei S ilicon Gate


    OCR Scan     		PDF MSM2758 192-BIT 8192-bit 1024-words 24-pin S1980 intel 2758 eprom MSM2128

    MB7122E

    Abstract: MB7122 mb7121 16as15 v024v MB7100 68Vt
    Text: APR 2 1993 May 1990 Edition 4.0 FUJITSU DATASHEET'- MB7121E/H/L, MB7122E/H/Y/L PROGRAMMABLE SCHOTTKY 4096-BIT READ ONL Y MEMORY SCHOTTKY 4096-RT DEAP PROM 1024WORDS x 4BITS The Fujitsu MB7121 and MB7122 are high speed Schottky TTL electrically field programmable read only memories organized as 1024words by 4bits. With


    OCR Scan     		PDF MB7121E/H/L, MB7122E/H/Y/L 4096-BIT 4096-RT 1024WORDS MB7121 MB7122 MB7122, MB7122E 16as15 v024v MB7100 68Vt

    2102 Static RAM

    Abstract: 2102 Ram RAM 2102 2102 2102-2 RAM I2102 21l0 21L02 2102L2 2102LH
    Text: 2 1 0 2 /2 1 0 2 L /2 1 L 0 2 1024 x 1 Static RAM M O S M em ory P ro d u cts Logic Sym bol D escrip tio n The 2102 fa m ily c o n s is ts of 1024-w ord by 1-bit s ta tic Random A c c e s s re a d /w rite M em o rie s RAM th a t req u ire a single 5 V supply, have fully T T L -com p a tib le


    OCR Scan     		PDF 2102/2102L/21L02 1024-word 2102L) 21L02) 2102L 21L02 16-pin 2102/2102L/21L02 2102 Static RAM 2102 Ram RAM 2102 2102 2102-2 RAM I2102 21l0 2102L2 2102LH

    HN25088L

    Abstract: HN25089L Hitachi Scans-001
    Text: H N 2 5 8 8 L , H N 2 5 Ö 9 L 1024-word x 8-bit Programmable Read Only Memories The H IT A C H I H N 2 5 0 8 8 L and H N 2 5 0 8 9 L are lo w po w e r and high speed e le c tric a lly program m able, fu lly decoded T T L B ip o la r 8192 b it read o n ly m em ories organized as 1024 w ord s b y 8 bits w ith onc h ip address decoding and fo u r c h ip enable inputs.


    OCR Scan     		PDF HN25088L, HN25089L 1024-word HN25088L HN25089L 100ns 350mW 70max Hitachi Scans-001

    high level block diagram for asynchronous FIFO

    Abstract: DIP28-W-300 LH540202 LJH540202
    Text: LH540202 CMOS 1024 X 9 Asynchronous FIFO FEATURES FUNCTIONAL DESCRIPTION • Fast Access Times: 15/20/25/35/50 ns The LH540202 is a FIFO First-In, First-Out memory device, based onfully-staticCMOSdual-portSRAM tech­ nology, capable of storing up to 1024 nine-bit words. It


    OCR Scan     		PDF LH540202 LH5497 ArrVIDT/MS7202 LH5497H 28-Pin, 300-mil 32-Pin 32PLCC high level block diagram for asynchronous FIFO DIP28-W-300 LH540202 LJH540202

    Untitled

    Abstract: No abstract text available
    Text: 57C4502-50/65/80 High Density First-in First-out FIFO 1024x9 CMOS Memory cn ~>l O Advance Information DISTINCTIVE CHARACTERISTICS RAM based FIFO 1024x9 organization Cycle times of 65/80/100 nanoseconds Asynchronous and simultaneous writes and reads Low power consumption - 80 mA maximum


    OCR Scan     		PDF 57C4502-50/65/80 1024x9 57C4502

    Untitled

    Abstract: No abstract text available
    Text: Am27S35/Am27S37 8,192-Bit 1024x8 Bipolar Registered PROM with Programmable INITIALIZE Input Versatile programmable asynchronous or synchronous enable for simplified word expansion Buffered common INITIALIZE input either asynchronous (Am27S35) or synchronous (Am27S37)


    OCR Scan     		PDF Am27S35/Am27S37 192-Bit 1024x8) 24-pin, 300-mil Am27S35 Am27S37

    Untitled

    Abstract: No abstract text available
    Text: H I T A C H I / LOGIC/ARRAYS/MEN TS D Ë | 44=11,203 0010=135 b | ~ 92D H M I 0 0 4 7 4 , H M 1 4 7 4 F 10932 -^ T -4 6 -2 3 -0 8 1 0 2 4 - w o r d x 4 - b i t F u lly D e c o d e d R a n d o m A c c e s s M e m o r y The H M 100474 is a 1024-words x 4-bit, read/write, random access


    OCR Scan     		PDF 1024-words

    Untitled

    Abstract: No abstract text available
    Text: DOC BU-61590 ILC DATA DEVICE CORPORATION — MIL-STD-1553A/B & Me AIR BC/RT/MT, ADVANCED COMMUNICATION ENGINE ACE FEATURES DESCRIPTION DDC’s BU-61590 BC/RT/MT Universal Advanced C om m unication Engine (ACE) terminal comprises a complete integrated interface between a host


    OCR Scan     		PDF BU-61590 MIL-STD-1553A/B BU-61590 BU61590 78-pin 1553B, A3818, A5232, A5690 15/-15v

    HD63183

    Abstract: No abstract text available
    Text: Under Development H D63185- D ocum ent Im age Com pression and Expansion Processor Enhanced DICEP-E DICEP-E is an LSI th a t perform s com pression (encoding) and expansion (decoding) of 2value d a ta used to rep resen t a docum ent image. It is positioned a t th e high en d of th e


    OCR Scan     		PDF D63185--------- HD63085) HD63183) HD63183

    RAM 2102

    Abstract: 2102 Static RAM 2102 ram 2102 2102-2 RAM 2102L 2102F 2102H 2102L1 2102L2
    Text: Extended Temperature Range Supplement 2 1 0 2 /2 1 02L 1024 x 1 Static RAM M OS M em ory P ro d u cts D escrip tio n T he 2 1 0 2 fam ily c o n s is ts o f 1024-w ord by 1-bit s ta tic Random A c c e s s re a d /w rite M em o rie s RAM th a t req u ire a single 5 V supply, h a ve fu liy T T L -co m p a tib le


    OCR Scan     		PDF 2102/2102L 1024-word 2102L 16-pin 2102L) 2102H 2102LH 2102F 2102LF 2102L1 RAM 2102 2102 Static RAM 2102 ram 2102 2102-2 RAM 2102L2

    HM 1211

    Abstract: HM2110 HM2110-1 Jj-80
    Text: H M 2 1 1 0 , H M 2 1 1 0 -1 1 0 2 4 - w o rd x 1 - b i t F u lly D e c o d e d R a n d o m A c c e s s M e m o ry The H M 21 10 Series item is an ECL compatible, 1024-word x 1-bit, read/write, random access memory developed for application to scratch pads, control and buffer memories, etc. which require high


    OCR Scan     		PDF HM2110, 1024-word HM2110 HM2110: HM2110-1: jj-80% HM2110-1 HM2110 HM 1211 HM2110-1 Jj-80