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    1024K 16 Search Results

    1024K 16 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    AM27C010-200DM/B Rochester Electronics LLC 27C010 - 1024K (128K x 8) CMOS EPROM Visit Rochester Electronics LLC Buy
    AM27C010-55DI Rochester Electronics LLC 27C010 - 1024K (128K x 8) CMOS EPROM Visit Rochester Electronics LLC Buy
    27C010-120DI Rochester Electronics LLC 27C010 - 1024K (128K x 8) CMOS EPROM Visit Rochester Electronics LLC Buy
    70T3509MS133BPI Renesas Electronics Corporation 1024K x 36 Sync, 3.3V/2.5V Dual-Port RAM Visit Renesas Electronics Corporation
    70T3509MS133BP Renesas Electronics Corporation 1024K x 36 Sync, 3.3V/2.5V Dual-Port RAM Visit Renesas Electronics Corporation
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    1024K 16 Price and Stock

    Samtec Inc PMSS-10-24-K-16.00-D-LUS

    Cable Assembly Discrete Wire 0.406m 24AWG 10 POS Discrete Wire Housing to 10 POS Discrete Wire Housing RCP-RCP - Bulk (Alt: PMSS-10-24-K-16.00)
    Free Sample
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    Avnet Americas PMSS-10-24-K-16.00-D-LUS Bulk 1
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    Samtec Inc PMSD-10-24-K-16.00-D-LUS

    Cable Assembly Discrete Wire 0.406m 24AWG 20 POS Discrete Wire Housing to 20 POS Discrete Wire Housing RCP-RCP - Bulk (Alt: PMSD-10-24-K-16.00)
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    Master Electronics PMSD-10-24-K-16.00-D-LUS
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    Samtec Inc PMSS-10-24-K-16.00-D-LDS

    Cable Assembly Discrete Wire 0.406m 24AWG 10 POS Discrete Wire Housing to 10 POS Discrete Wire Housing RCP-RCP - Bulk (Alt: PMSS-10-24-K-16.00)
    Free Sample
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    Dynapar HS35R1024K16J

    Encoder, Heavy Duty, Hollow Shaft, 1-1/4in Bore, 1024 PPR, 8 pin M12 Termination | Dynapar HS35R1024K16J
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    RS HS35R1024K16J Bulk 2 Weeks 1
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    PennEngineering (PEM) AEA1024K166

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    DB Roberts AEA1024K166
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    Find more 1024K 16 price and stock on Findchips.com

    1024K 16 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    EDI9G361024C

    Abstract: No abstract text available
    Text: EDI9G361024C 1024K x 36 Static RAM CMOS, High Speed Module FEATURES DESCRIPTION n 1024K x 36 bit CMOS Static The EDI9G361024C is a high speed 36Mb Static RAM module organized as 1024K words by 36 bits. This module is constructed from nine 1024K x 4 Static RAMs in SOJ packages on an epoxy


    Original     		PDF EDI9G361024C 1024K EDI9G361024C 9G361024C EDI9G361024C15MNC

    CY14B108N-BA25XI

    Abstract: 54TSOP CY14B108L-BA25XI
    Text: CY14B108L CY14B108N 8 Mbit 1024K x 8/512K x 16 nvSRAM 8 Mbit (1024K x 8/512K x 16) nvSRAM Features Functional Description • 20 ns, 25 ns, and 45 ns Access Times ■ Internally Organized as 1024K x 8 (CY14B108L) or 512K x 16 (CY14B108N) ■ Hands off Automatic STORE on Power Down with only a Small


    Original     		PDF CY14B108L CY14B108N 1024K 8/512K CY14B108L) CY14B108N) CY14B108L/CY14B108N CY14B108N-BA25XI 54TSOP CY14B108L-BA25XI

    Untitled

    Abstract: No abstract text available
    Text: CY14B108L CY14B108N 8 Mbit 1024K x 8/512K x 16 nvSRAM 8 Mbit (1024K x 8/512K x 16) nvSRAM Features Functional Description • 20 ns, 25 ns, and 45 ns access times ■ Internally organized as 1024K x 8 (CY14B108L) or 512K x 16 (CY14B108N) ■ Hands off automatic STORE on power down with only a small


    Original     		PDF CY14B108L CY14B108N 1024K 8/512K CY14B108L/CY14B108N

    EDI9G361024C

    Abstract: No abstract text available
    Text: EDI9G361024C 1024K x 36 Static RAM CMOS, High Speed Module FEATURES DESCRIPTION •1024K x 36 bit CMOS Static The EDI9G361024C is a high speed 36Mb Static RAM module organized as 1024K words by 36 bits. This module is constructed from nine 1024K x 4 Static RAMs in SOJ packages on an epoxy


    Original     		PDF EDI9G361024C 1024K EDI9G361024C 9G361024C EDI9G361024C15MNC

    AS7C316098B

    Abstract: No abstract text available
    Text: AS7C316098B 1024K X 16 BIT HIGH SPEED CMOS SRAM Rev. 1.0 REVISION HISTORY Revision Rev. 1.0 Confidential Description Initial Issued Issue Date June 2014 Rev1.0 – June 2014 AS7C316098B 1024K X 16 BIT HIGH SPEED CMOS SRAM Rev. 1.0 FEATURES GENERAL DESCRIPTION


    Original     		PDF AS7C316098B 1024K 54-pin AS7C316098B 16M-R

    LE28DW3215AT-80

    Abstract: flash "simultaneous read write" 198 DQ15-DQ0 A20-A0
    Text: 32 Megabit FlashBank Memory LE28DW3215AT-80 1 FEATURES: Single 3.0-Volt Read and Write Operations Separate Memory Banks by Address Space − Bank1: 16Mbit 1024K x 16 Flash − Bank2: 16Mbit(1024K x 16) Flash − Simultaneous Read and Write Capability Superior Reliability


    Original     		PDF LE28DW3215AT-80 16Mbit 1024K 000Cycles 000Cycies 10years 15sec 500ms LE28DW3215AT-80 flash "simultaneous read write" 198 DQ15-DQ0 A20-A0

    54-pin TSOP thermal resistance junction to case

    Abstract: No abstract text available
    Text: CY14B108L, CY14B108N 8 Mbit 1024K x 8/512K x 16 nvSRAM Features Functional Description • 20 ns, 25 ns, and 45 ns Access Times ■ Internally Organized as 1024K x 8 (CY14B108L) or 512K x 16 (CY14B108N) ■ Hands off Automatic STORE on Power Down with only a Small


    Original     		PDF CY14B108L, CY14B108N 1024K 8/512K CY14B108L/CY14B108N 54-pin TSOP thermal resistance junction to case

    CY14B108M

    Abstract: No abstract text available
    Text: CY14B108K, CY14B108M 8 Mbit 1024K x 8/512K x 16 nvSRAM with Real Time Clock Features • Watchdog Timer ■ 25 ns and 45 ns access times ■ Clock alarm with programmable interrupts ■ Internally organized as 1024K x 8 (CY14B108K) or 512K x 16 (CY14B108M)


    Original     		PDF CY14B108K, CY14B108M 1024K 8/512K 54-pin CY14B108K) CY14B108M) CY14B108M

    Untitled

    Abstract: No abstract text available
    Text: CY14B108K, CY14B108M 8 Mbit 1024K x 8/512K x 16 nvSRAM with Real Time Clock Features • Watchdog Timer ■ 25 ns and 45 ns Access Times ■ Clock Alarm with Programmable Interrupts ■ Internally Organized as 1024K x 8 (CY14B108K) or 512K x 16 (CY14B108M)


    Original     		PDF CY14B108K, CY14B108M 1024K 8/512K CY14B108K) CY14B108M) 54-pin

    10262 to-3

    Abstract: psoc c code for ring counter
    Text: CY14B108K, CY14B108M 8 Mbit 1024K x 8/512K x 16 nvSRAM with Real Time Clock Features • Watchdog Timer ■ 25 ns and 45 ns Access Times ■ Clock Alarm with Programmable Interrupts ■ Internally Organized as 1024K x 8 (CY14B108K) or 512K x 16 (CY14B108M)


    Original     		PDF CY14B108K, CY14B108M 1024K 8/512K CY14B108K) CY14B108M) 54-pin 10262 to-3 psoc c code for ring counter

    CY14B108N-BA20XIT

    Abstract: 54-TSOP
    Text: CY14B108L, CY14B108N 8 Mbit 1024K x 8/512K x 16 nvSRAM Features Functional Description • 20 ns, 25 ns, and 45 ns Access Times ■ Internally Organized as 1024K x 8 (CY14B108L) or 512K x 16 (CY14B108N) ■ Hands off Automatic STORE on Power Down with only a Small


    Original     		PDF CY14B108L, CY14B108N 1024K 8/512K CY14B108L/CY14B108N CY14B108N-BA20XIT 54-TSOP

    cy14b108l-zs20xi

    Abstract: CY14B108L-ZS45XI CY14B108N-BA25XI 164uf
    Text: CY14B108L, CY14B108N 8 Mbit 1024K x 8/512K x 16 nvSRAM Features Functional Description • 20 ns, 25 ns, and 45 ns Access Times ■ Internally Organized as 1024K x 8 (CY14B108L) or 512K x 16 (CY14B108N) ■ Hands off Automatic STORE on Power Down with only a Small


    Original     		PDF CY14B108L, CY14B108N 1024K 8/512K CY14B108L/CY14B108N cy14b108l-zs20xi CY14B108L-ZS45XI CY14B108N-BA25XI 164uf

    CYM1471

    Abstract: CYM1471PS-85C CYM1481
    Text: CYM1471 CYM1481 1024K x 8 SRAM Module 2048K x 8 SRAM Module Features Functional Description D The CYM1471 and CYM1481 are highĆ performance 8Ćmegabit and 16Ćmegabit static RAM modules organized as 1024K words 1471 or 2048K words (1481) by 8 bits. These modules are constructed from


    Original     		PDF CYM1471 CYM1481 1024K 2048K CYM1471 CYM1481 16megabit 1024K 8/16megabit CYM1471PS-85C

    TSOP II 54

    Abstract: No abstract text available
    Text: CY14B108L, CY14B108N 8 Mbit 1024K x 8/512K x 16 nvSRAM Features Functional Description • 20 ns, 25 ns, and 45 ns Access Times ■ Internally Organized as 1024K x 8 (CY14B108L) or 512K x 16 (CY14B108N) ■ Hands off Automatic STORE on Power Down with only a Small


    Original     		PDF CY14B108L, CY14B108N 1024K 8/512K CY14B108L) CY14B108N) 48-Ball 44/54-Pin CY14B108L/CY14B108N TSOP II 54

    Untitled

    Abstract: No abstract text available
    Text: A29800 Series 1024K X 8 Bit / 512K X 16 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory Document Title 1024K X 8 Bit / 512K X 16 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory Revision History Rev. No. History Issue Date Remark 0.0 Initial issue May 4, 2001


    Original     		PDF A29800 1024K XX11h XX03h

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE CY14E108L, CY14E108N 8 Mbit 1024K x 8/512K x 16 nvSRAM Features Functional Description • 20 ns, 25 ns, and 45 ns access times ■ Internally organized as 1024K x 8 (CY14E108L) or 512K x 16 (CY14E108N) ■ Hands off automatic STORE on power down with only a small


    Original     		PDF CY14E108L, CY14E108N 1024K 8/512K CY14E108L) CY14E108N) CY14E108L/CY14E108N

    Untitled

    Abstract: No abstract text available
    Text: CY14B108K, CY14B108M 8 Mbit 1024K x 8/512K x 16 nvSRAM with Real Time Clock Features • Watchdog Timer ■ 20 ns, 25 ns, and 45 ns Access Times ■ Clock Alarm with Programmable Interrupts ■ Internally Organized as 1024K x 8 (CY14B108K) or 512K x 16 (CY14B108M)


    Original     		PDF CY14B108K, CY14B108M 1024K 8/512K 54-pin CY14B108K) CY14B108M)

    Untitled

    Abstract: No abstract text available
    Text: CY14B108K, CY14B108M 8 Mbit 1024K x 8/512K x 16 nvSRAM with Real Time Clock Features • Watchdog Timer ■ 20 ns, 25 ns, and 45 ns Access Times ■ Clock Alarm with Programmable Interrupts ■ Internally Organized as 1024K x 8 (CY14B108K) or 512K x 16 (CY14B108M)


    Original     		PDF CY14B108K, CY14B108M 1024K 8/512K 54-pin CY14B108K) CY14B108M)

    CY14B108N-BA25XI

    Abstract: 54TSOP
    Text: ADVANCE CY14B108L, CY14B108N 8-Mbit 1024K x 8/512K x 16 nvSRAM Features Functional Description • 20 ns, 25 ns, and 45 ns access times ■ Internally organized as 1024K x 8 (CY14B108L) or 512K x 16 (CY14B108N) ■ Hands off automatic STORE on power down with only a small


    Original     		PDF CY14B108L, CY14B108N 1024K 8/512K CY14B108L) CY14B108N) CY14B108L/CY14B108N CY14B108N-BA25XI 54TSOP

    A29800UV-70F

    Abstract: A29800TV-70F a29800um-70f A29800 A29800V
    Text: A29800 Series 1024K X 8 Bit / 512K X 16 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory Document Title 1024K X 8 Bit / 512K X 16 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory Revision History Rev. No. History Issue Date Remark 0.0 Initial issue May 4, 2001


    Original     		PDF A29800 1024K XX11h XX03h A29800UV-70F A29800TV-70F a29800um-70f A29800V

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE CY14B108L, CY14B108N 8-Mbit 1024K x 8/512K x 16 nvSRAM Features Functional Description • 20 ns, 25 ns, and 45 ns access times ■ Internally organized as 1024K x 8 (CY14B108L) or 512K x 16 (CY14B108N) ■ Hands off automatic STORE on power down with only a small


    Original     		PDF CY14B108L, CY14B108N 1024K 8/512K CY14B108L) CY14B108N) CY14B108L/CY14B108N

    A29800UV-70F

    Abstract: a29800uv-70if A29800TV-70I A29800TV-70F a29800um-70f A29800TV-70IF A29800UV70F A29800 A29800UV-55 A29800UV-70I
    Text: A29800 Series 1024K X 8 Bit / 512K X 16 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory Document Title 1024K X 8 Bit / 512K X 16 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory Revision History Rev. No. History Issue Date Remark 0.0 Initial issue May 4, 2001


    Original     		PDF A29800 1024K XX11h XX03h A29800UV-70F a29800uv-70if A29800TV-70I A29800TV-70F a29800um-70f A29800TV-70IF A29800UV70F A29800UV-55 A29800UV-70I

    Untitled

    Abstract: No abstract text available
    Text: I 1 MEGABIT CM O S STATIC RAM MODULE IDT7M624S Integrated D evice Technology. Inc FEATURES: DESCRIPTION: • High-density 1024K-bit CMOS static RAM module The IDT7M624 is a 1024K-bit high-speed CMOS static RAM constructed on a multi-layered ceramic substrate using 16


    OCR Scan     		PDF IDT7M624S 1024K-bit IDT7M624 IDT7187 lntoa64K IDT7187s 624S1 IDT7M624 MIL-STD-883,

    Untitled

    Abstract: No abstract text available
    Text: 1 M EG ABIT CM O S STATIC RAM PLASTIC M O DULE ADVANCE IDT7MB624 Integrated Devicelechnology. Inc FEATURES: DESCRIPTION: • High-denslty 1024K-bit CMOS static RAM module The IDT7MB624 is a 1024K-bit high-speed CMOS static RAM constructed on an epoxy laminate substrate using 16 IDT7187


    OCR Scan     		PDF IDT7MB624 1024K-bit IDT7187 40-pln, 40-PIN