59CF8010
Abstract: SRAM TTL 1024K x 8
Text: PRELIMINARY LINVEX TECHNOLOGY, CORP. 59CF8010 1024K x 8 Bit FLASH and 128K x 8 Bit SRAM Low Voltage Combo Memory FEATURES GENERAL DESCRIPTION • • • The LX59CF8010 is a combination memory chip consist of 8M-bit FLASH Memory organized as 1024K words by 8 bits and a 1-Meg-bit Static
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59CF8010
1024K
LX59CF8010
A14-A0
A1-A19
59CF8010
SRAM TTL 1024K x 8
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72-PIN
Abstract: DS3803
Text: DS3803 1024k Flexible NV SRAM SIMM www.dalsemi.com FEATURES PIN ASSIGNMENT 1 Flexibly organized as 32k x 32, 64k x 16 or 128k x 8bits 10 years minimum data retention in the absence of external power Nonvolatile circuitry transparent to and independent from host system
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DS3803
1024k
72-position
DS3803
72-Pin
72-PIN
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72-PIN
Abstract: DS3803
Text: DS3803 1024k Flexible NV SRAM SIMM www.dalsemi.com FEATURES PIN ASSIGNMENT 1 Flexibly organized as 32k x 32, 64k x 16 or 128k x 8bits 10 years minimum data retention in the absence of external power Nonvolatile circuitry transparent to and independent from host system
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DS3803
1024k
72-position
DS3803
72-Pin
72-PIN
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DS1210
Abstract: DS3803
Text: DS3803 DS3803 1024K Flexible NV SRAM SIMM FEATURES PIN ASSIGNMENT • Flexibly organized as 32K x 32, 64K x 16 or 128K x 8 bits 1 • 10 years minimum data retention in the absence of external power 256K SRAM • Nonvolatile circuitry transparent to and independent
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DS3803
1024K
DS3803
DS1210
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d7b component
Abstract: DS1210 DS3803 simm 256K
Text: DS3803 PRELIMINARY DS3803 1024K Flexible NV SRAM SIMM FEATURES PIN ASSIGNMENT • Flexibly organized as 32K x 32, 64K x 16 or 128K x 8 bits 1 • 10 years minimum data retention in the absence of external power 256K SRAM • Nonvolatile circuitry transparent to and independent
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DS3803
1024K
DS3803
d7b component
DS1210
simm 256K
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32-PIN
Abstract: 34-PIN DS1245 DS1245AB DS1245AB-70 DS1245AB-85 DS1245Y DS1245Y-70 DS9034PC
Text: DS1245Y/AB 1024k Nonvolatile SRAM www.dalsemi.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 128k x 8 volatile static RAM, EEPROM or Flash memory Unlimited write cycles
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DS1245Y/AB
1024k
DS1245Y)
DS1245AB)
32-pin
34-PIN
DS1245
DS1245AB
DS1245AB-70
DS1245AB-85
DS1245Y
DS1245Y-70
DS9034PC
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DS1245
Abstract: 32-PIN 34-PIN DS1245AB DS1245AB-70 DS1245AB-85 DS1245Y DS1245Y-70 DS9034PC
Text: DS1245Y/AB 1024k Nonvolatile SRAM www.dalsemi.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 128k x 8 volatile static RAM, EEPROM or Flash memory Unlimited write cycles
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DS1245Y/AB
1024k
DS1245Y)
DS1245AB)
32-pin
DS1245
34-PIN
DS1245AB
DS1245AB-70
DS1245AB-85
DS1245Y
DS1245Y-70
DS9034PC
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DS1245
Abstract: DS1245AB DS1245W DS9034PC
Text: DS1245W PRELIMINARY DS1245W 3.3V 1024K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss • Replaces 128K x 8 volatile static RAM, EEPROM or
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DS1245W
1024K
DS1245
DS1245AB
DS1245W
DS9034PC
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SRAM 34 pin
Abstract: 32-PIN 34-PIN DS1245 DS1245AB DS1245W DS1245W-150 DS9034PC
Text: DS1245W 3.3V 1024k Nonvolatile SRAM www.dalsemi.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 128k x 8 volatile static RAM, EEPROM or Flash memory Unlimited write cycles
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DS1245W
1024k
32-pin
SRAM 34 pin
34-PIN
DS1245
DS1245AB
DS1245W
DS1245W-150
DS9034PC
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Untitled
Abstract: No abstract text available
Text: 1 MEGABIT 128K x 8 REGISTERED/BUFFERED/ LATCHED CMOS STATIC RAM SUBSYSTEMS IDT7M824 FAMILY FEATURES: DESCRIPTION: • High-density 1024K-bit (128K x 8-bit) CMOS static RAM modules with registered/buffered/latched addresses and l/Os The IDT7M824 fam ily is a set of 1024K-bit (128K x 8-bit) high
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1024K-bit
-15mA
64-pin,
IDT49C802
IDT49C802
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D28F512
Abstract: flash eeprom D28F010
Text: SEEQ TECHNOLOGY FLASH EEPROM ALTERNATE SOURCE DIRECTORY Alternate Manufacturer INTEL INTEL NATIONAL NATIONAL Functionally Configuration Part# 6 4KX8 128K X 8 64KX8 128K X 8 D28F512 D28F010 MC48F512 MC48F010 1024K Flash EEPROM Technology, Incorporated 2-1 Equivalent
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D28F512
D28F010
MC48F512
MC48F010
64KX8
48F512
48F010
48F010
1024K
flash eeprom
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Untitled
Abstract: No abstract text available
Text: 1 MEGABIT 128K x 8-BIT CMOS STATIC RAM PLASTIC SIP MODULE i d ï 8MP824S FEATURES: DESCRIPTION: • High-density 1024K (128K x 8) CMOS static RAM module The IDT8MP824S is a1024K (131,072 x 8-bit) high-speed static RAM constructed on an epoxy laminate substrate using four
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8MP824S
1024K
IDT8MP824S
a1024K
IDT71256
8MP824
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1024K
Abstract: No abstract text available
Text: Dense-Pac M icrosystem s, Inc. DPS1MS16P 1024K X 16 CMOS SRAM MODULE O DESCRIPTION: The DPS1MS16P is a 16 megabit, low-power static RAM module. The module is comprised o f sixteen 128K X 8 SRAM devices and tw o high-speed decoders. The DPS1MS16P can be user configurable as 1024K X 16 o r as 2048K X 8 bits.
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DPS1MS16P
1024K
DPS1MS16P
2048K
DPS1MS16XP)
DPS1MS16XP
thePS1MS16P
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Untitled
Abstract: No abstract text available
Text: LOGIC DEVICES INC SbE D • 5Sfc>ST05 Q D Q i n b 7 ■ T-46-23-14 1 Megabit 128K x 8-bit Static RAM Module DESCRIPTION FEATURES □ 1024K (128K x 8-bit) Static RAM Module Q Advanced CMOS Technology □ High Speed — to 25 ns worst-case □ Low Power Operation
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T-46-23-14
1024K
IDT8M824S
32-pin
LMM824
LMM824
L7C199
DG01S01
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mc27c010
Abstract: NMC27C010 04 ow NMC27C010QE170
Text: NMC27C010 PRELIMINARY KgM National ÆÆ Semiconductor NMC27C010 Former NMC27C1023 * 1,048,576-Bit (128k x 8) UV Erasable CMOS PROM General Description Features The NMC27C010 is a high-speed 1024k UV erasable and electrically reprogrammable CMOS EPROM, ideally suited
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NMC27C010
NMC27C1023)
576-Bit
NMC27C010
1024k
32-pin
32-Lead
mc27c010
04 ow
NMC27C010QE170
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Untitled
Abstract: No abstract text available
Text: DS3803 PRELIMINARY DALLAS SEMICONDUCTOR DS3803 1024K Flexible NV SRAM SIMM PIN ASSIGNMENT FEATURES • Flexibly organized as 32K x 3 2 ,64K x 16 or 128K x 8 bits o • 10 years minimum data retention in the absence of external power • Nonvolatile circuitry transparent to and independent
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DS3803
1024K
72-position
S3803
DS3803
72-PIN
72-PIN
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72-PIN
Abstract: AO-A14 DS3803
Text: !H i DS3803 1024k Flexible NV SRAM SIMM ln*: |pr mmm om mtm com PIN ASSIGNMENT FEATURES • Flexibly organized as 32k x 32, 64k x 16 or 128k x 8bits ■ 10 years minimum data retention in the absence of external power ■ Nonvolatile circuitry transparent to and
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DS3803
1024k
72-position
DS3803
72-Pin
72-PIN
AO-A14
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Untitled
Abstract: No abstract text available
Text: 28F010 1024K 128K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Command Register Architecture for Microprocessor/Microcontroller Compatible Write interface ■ Quick-Pulse Programming Algorithm — 10 ¿is Typical Byte-Program
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28F010
1024K
EF010-120
TF28F010-120
ER-20,
ER-24,
RR-60,
AP-316,
AP-325
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28F010-120
Abstract: 28f010
Text: in te l 28F010 1024K 128K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase • Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface Qulck-Pulse Programming Algorithm — 10 jus Typical Byte-Program
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28F010
1024K
N28F010-120
TN28F010-120
N28F010-150
F28F010-120
F28F010-150
TE28F010-120
TF28F010-120
ER-20,
28F010-120
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27c32
Abstract: EPROM 27C32 27c32 eprom EPROM 2764 nmc27cp128q300 27C128 eprom 27C16 Vpp of 27256 eprom 2716 eprom datasheet 27C512
Text: NMC27C1023 VJFÊ National /2 /m Semiconductor ÆUm Corporation ADVANCED INFORMATION NMC27C1023 1,048,576-Bit 128k x 8 UV Erasable CMOS PROM General Description Features The NMC27C1023 is a high-speed 1024k UV erasable and electrically reprogrammable CMOS EPROM, ideally suited
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NMC27C1023
576-Bit
NMC27C1023
1024k
32-pin
tl/d/8805-2
NMC27CP128
NMC27CP128Q
27c32
EPROM 27C32
27c32 eprom
EPROM 2764
nmc27cp128q300
27C128
eprom 27C16
Vpp of 27256 eprom
2716 eprom datasheet
27C512
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Untitled
Abstract: No abstract text available
Text: DALLAS SEMICONDUCTOR DS1645Y/AB, DS1645YLPM/ABLPM Partitionable 1024K NV SRAM FEATURES PIN ASSIGNMENT • Data retention in the absence of Vcc • Data is automatically protected during power loss • Directly replaces 128K x 8 volatile static RAM or EEPROM
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DS1645Y/AB,
DS1645YLPM/ABLPM
1024K
32-pin
DS1645Y/AB)
DS1645YLPM)
DS1645Y
DS1645YLPM/ABLPM
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NMC27C010
Abstract: No abstract text available
Text: NMC27C010 PRELIMINARY O T National À jÌ Semiconductor NMC27C010 Former NMC27C1023 * 1,048,576-Bit (128k x 8) UV Erasable CMOS PROM General Description Features The NMC27C010 is a high-speed 1024k UV erasable and electrically reprogrammable CMOS EPROM, ideally suited
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NMC27C010
NMC27C1023)
576-Bit
NMC27C010
1024k
32-pin
TL/D/9182-10
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transistor t 2190
Abstract: intel 2114 SmartDie 28F010
Text: inte] 28F010 1024K 128K x 8 FLASH MEMORY SmartDie Product Specification Flash Electrical Chip Erase — 1 Second Typical Chip Erase Quick-Pulse Programming Algorithm — 10ns Typical Byte Program — 2 Second Chip Program 100K Erase/Program Cycles Typical
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28F010
1024K
X2BF010-90
ER-20
ER-24,
RR-60,
AP-316,
AP-325,
USA/DP-019/694
transistor t 2190
intel 2114
SmartDie
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Untitled
Abstract: No abstract text available
Text: D S 3803 PRELIMINARY DALLAS SEMICONDUCTOR DS3803 1024K Flexible NV SRAM SIMM FEATURES PIN ASSIGNMENT • Flexibly organized as 32K x 32, 64K x 16 or 128K x 8 bits _ r ~ • 10 years m inimum data retention in the absence of external power • Nonvolatile circuitry transparent to and independent
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DS3803
1024K
72-PIN
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