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    1024K 128K X 8 Search Results

    1024K 128K X 8 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    AM27C010-200DM/B Rochester Electronics LLC 27C010 - 1024K (128K x 8) CMOS EPROM Visit Rochester Electronics LLC Buy
    AM27C010-55DI Rochester Electronics LLC 27C010 - 1024K (128K x 8) CMOS EPROM Visit Rochester Electronics LLC Buy
    27C010-120DI Rochester Electronics LLC 27C010 - 1024K (128K x 8) CMOS EPROM Visit Rochester Electronics LLC Buy
    TN28F010-150-G Rochester Electronics LLC 28F010 - 128K X 8 Flash Visit Rochester Electronics LLC Buy
    TN28F010-90-G Rochester Electronics LLC 28F010 - 128K X 8 Flash Visit Rochester Electronics LLC Buy

    1024K 128K X 8 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    59CF8010

    Abstract: SRAM TTL 1024K x 8
    Text: PRELIMINARY LINVEX TECHNOLOGY, CORP. 59CF8010 1024K x 8 Bit FLASH and 128K x 8 Bit SRAM Low Voltage Combo Memory FEATURES GENERAL DESCRIPTION • • • The LX59CF8010 is a combination memory chip consist of 8M-bit FLASH Memory organized as 1024K words by 8 bits and a 1-Meg-bit Static


    Original     		PDF 59CF8010 1024K LX59CF8010 A14-A0 A1-A19 59CF8010 SRAM TTL 1024K x 8

    72-PIN

    Abstract: DS3803
    Text: DS3803 1024k Flexible NV SRAM SIMM www.dalsemi.com FEATURES PIN ASSIGNMENT 1 Flexibly organized as 32k x 32, 64k x 16 or 128k x 8bits 10 years minimum data retention in the absence of external power Nonvolatile circuitry transparent to and independent from host system


    Original     		PDF DS3803 1024k 72-position DS3803 72-Pin 72-PIN

    72-PIN

    Abstract: DS3803
    Text: DS3803 1024k Flexible NV SRAM SIMM www.dalsemi.com FEATURES PIN ASSIGNMENT 1 Flexibly organized as 32k x 32, 64k x 16 or 128k x 8bits 10 years minimum data retention in the absence of external power Nonvolatile circuitry transparent to and independent from host system


    Original     		PDF DS3803 1024k 72-position DS3803 72-Pin 72-PIN

    DS1210

    Abstract: DS3803
    Text: DS3803 DS3803 1024K Flexible NV SRAM SIMM FEATURES PIN ASSIGNMENT • Flexibly organized as 32K x 32, 64K x 16 or 128K x 8 bits 1 • 10 years minimum data retention in the absence of external power 256K SRAM • Nonvolatile circuitry transparent to and independent


    Original     		PDF DS3803 1024K DS3803 DS1210

    d7b component

    Abstract: DS1210 DS3803 simm 256K
    Text: DS3803 PRELIMINARY DS3803 1024K Flexible NV SRAM SIMM FEATURES PIN ASSIGNMENT • Flexibly organized as 32K x 32, 64K x 16 or 128K x 8 bits 1 • 10 years minimum data retention in the absence of external power 256K SRAM • Nonvolatile circuitry transparent to and independent


    Original     		PDF DS3803 1024K DS3803 d7b component DS1210 simm 256K

    32-PIN

    Abstract: 34-PIN DS1245 DS1245AB DS1245AB-70 DS1245AB-85 DS1245Y DS1245Y-70 DS9034PC
    Text: DS1245Y/AB 1024k Nonvolatile SRAM www.dalsemi.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 128k x 8 volatile static RAM, EEPROM or Flash memory Unlimited write cycles


    Original     		PDF DS1245Y/AB 1024k DS1245Y) DS1245AB) 32-pin 34-PIN DS1245 DS1245AB DS1245AB-70 DS1245AB-85 DS1245Y DS1245Y-70 DS9034PC

    DS1245

    Abstract: 32-PIN 34-PIN DS1245AB DS1245AB-70 DS1245AB-85 DS1245Y DS1245Y-70 DS9034PC
    Text: DS1245Y/AB 1024k Nonvolatile SRAM www.dalsemi.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 128k x 8 volatile static RAM, EEPROM or Flash memory Unlimited write cycles


    Original     		PDF DS1245Y/AB 1024k DS1245Y) DS1245AB) 32-pin DS1245 34-PIN DS1245AB DS1245AB-70 DS1245AB-85 DS1245Y DS1245Y-70 DS9034PC

    DS1245

    Abstract: DS1245AB DS1245W DS9034PC
    Text: DS1245W PRELIMINARY DS1245W 3.3V 1024K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss • Replaces 128K x 8 volatile static RAM, EEPROM or


    Original     		PDF DS1245W 1024K DS1245 DS1245AB DS1245W DS9034PC

    SRAM 34 pin

    Abstract: 32-PIN 34-PIN DS1245 DS1245AB DS1245W DS1245W-150 DS9034PC
    Text: DS1245W 3.3V 1024k Nonvolatile SRAM www.dalsemi.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 128k x 8 volatile static RAM, EEPROM or Flash memory Unlimited write cycles


    Original     		PDF DS1245W 1024k 32-pin SRAM 34 pin 34-PIN DS1245 DS1245AB DS1245W DS1245W-150 DS9034PC

    Untitled

    Abstract: No abstract text available
    Text: 1 MEGABIT 128K x 8 REGISTERED/BUFFERED/ LATCHED CMOS STATIC RAM SUBSYSTEMS IDT7M824 FAMILY FEATURES: DESCRIPTION: • High-density 1024K-bit (128K x 8-bit) CMOS static RAM modules with registered/buffered/latched addresses and l/Os The IDT7M824 fam ily is a set of 1024K-bit (128K x 8-bit) high­


    OCR Scan     		PDF 1024K-bit -15mA 64-pin, IDT49C802 IDT49C802

    D28F512

    Abstract: flash eeprom D28F010
    Text: SEEQ TECHNOLOGY FLASH EEPROM ALTERNATE SOURCE DIRECTORY Alternate Manufacturer INTEL INTEL NATIONAL NATIONAL Functionally Configuration Part# 6 4KX8 128K X 8 64KX8 128K X 8 D28F512 D28F010 MC48F512 MC48F010 1024K Flash EEPROM Technology, Incorporated 2-1 Equivalent


    OCR Scan     		PDF D28F512 D28F010 MC48F512 MC48F010 64KX8 48F512 48F010 48F010 1024K flash eeprom

    Untitled

    Abstract: No abstract text available
    Text: 1 MEGABIT 128K x 8-BIT CMOS STATIC RAM PLASTIC SIP MODULE i d ï 8MP824S FEATURES: DESCRIPTION: • High-density 1024K (128K x 8) CMOS static RAM module The IDT8MP824S is a1024K (131,072 x 8-bit) high-speed static RAM constructed on an epoxy laminate substrate using four


    OCR Scan     		PDF 8MP824S 1024K IDT8MP824S a1024K IDT71256 8MP824

    1024K

    Abstract: No abstract text available
    Text: Dense-Pac M icrosystem s, Inc. DPS1MS16P 1024K X 16 CMOS SRAM MODULE O DESCRIPTION: The DPS1MS16P is a 16 megabit, low-power static RAM module. The module is comprised o f sixteen 128K X 8 SRAM devices and tw o high-speed decoders. The DPS1MS16P can be user configurable as 1024K X 16 o r as 2048K X 8 bits.


    OCR Scan     		PDF DPS1MS16P 1024K DPS1MS16P 2048K DPS1MS16XP) DPS1MS16XP thePS1MS16P

    Untitled

    Abstract: No abstract text available
    Text: LOGIC DEVICES INC SbE D • 5Sfc>ST05 Q D Q i n b 7 ■ T-46-23-14 1 Megabit 128K x 8-bit Static RAM Module DESCRIPTION FEATURES □ 1024K (128K x 8-bit) Static RAM Module Q Advanced CMOS Technology □ High Speed — to 25 ns worst-case □ Low Power Operation


    OCR Scan     		PDF T-46-23-14 1024K IDT8M824S 32-pin LMM824 LMM824 L7C199 DG01S01

    mc27c010

    Abstract: NMC27C010 04 ow NMC27C010QE170
    Text: NMC27C010 PRELIMINARY KgM National ÆÆ Semiconductor NMC27C010 Former NMC27C1023 * 1,048,576-Bit (128k x 8) UV Erasable CMOS PROM General Description Features The NMC27C010 is a high-speed 1024k UV erasable and electrically reprogrammable CMOS EPROM, ideally suited


    OCR Scan     		PDF NMC27C010 NMC27C1023) 576-Bit NMC27C010 1024k 32-pin 32-Lead mc27c010 04 ow NMC27C010QE170

    Untitled

    Abstract: No abstract text available
    Text: DS3803 PRELIMINARY DALLAS SEMICONDUCTOR DS3803 1024K Flexible NV SRAM SIMM PIN ASSIGNMENT FEATURES • Flexibly organized as 32K x 3 2 ,64K x 16 or 128K x 8 bits o • 10 years minimum data retention in the absence of external power • Nonvolatile circuitry transparent to and independent


    OCR Scan     		PDF DS3803 1024K 72-position S3803 DS3803 72-PIN 72-PIN

    72-PIN

    Abstract: AO-A14 DS3803
    Text: !H i DS3803 1024k Flexible NV SRAM SIMM ln*: |pr mmm om mtm com PIN ASSIGNMENT FEATURES • Flexibly organized as 32k x 32, 64k x 16 or 128k x 8bits ■ 10 years minimum data retention in the absence of external power ■ Nonvolatile circuitry transparent to and


    OCR Scan     		PDF DS3803 1024k 72-position DS3803 72-Pin 72-PIN AO-A14

    Untitled

    Abstract: No abstract text available
    Text: 28F010 1024K 128K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Command Register Architecture for Microprocessor/Microcontroller Compatible Write interface ■ Quick-Pulse Programming Algorithm — 10 ¿is Typical Byte-Program


    OCR Scan     		PDF 28F010 1024K EF010-120 TF28F010-120 ER-20, ER-24, RR-60, AP-316, AP-325

    28F010-120

    Abstract: 28f010
    Text: in te l 28F010 1024K 128K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase • Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface Qulck-Pulse Programming Algorithm — 10 jus Typical Byte-Program


    OCR Scan     		PDF 28F010 1024K N28F010-120 TN28F010-120 N28F010-150 F28F010-120 F28F010-150 TE28F010-120 TF28F010-120 ER-20, 28F010-120

    27c32

    Abstract: EPROM 27C32 27c32 eprom EPROM 2764 nmc27cp128q300 27C128 eprom 27C16 Vpp of 27256 eprom 2716 eprom datasheet 27C512
    Text: NMC27C1023 VJFÊ National /2 /m Semiconductor ÆUm Corporation ADVANCED INFORMATION NMC27C1023 1,048,576-Bit 128k x 8 UV Erasable CMOS PROM General Description Features The NMC27C1023 is a high-speed 1024k UV erasable and electrically reprogrammable CMOS EPROM, ideally suited


    OCR Scan     		PDF NMC27C1023 576-Bit NMC27C1023 1024k 32-pin tl/d/8805-2 NMC27CP128 NMC27CP128Q 27c32 EPROM 27C32 27c32 eprom EPROM 2764 nmc27cp128q300 27C128 eprom 27C16 Vpp of 27256 eprom 2716 eprom datasheet 27C512

    Untitled

    Abstract: No abstract text available
    Text: DALLAS SEMICONDUCTOR DS1645Y/AB, DS1645YLPM/ABLPM Partitionable 1024K NV SRAM FEATURES PIN ASSIGNMENT • Data retention in the absence of Vcc • Data is automatically protected during power loss • Directly replaces 128K x 8 volatile static RAM or EEPROM


    OCR Scan     		PDF DS1645Y/AB, DS1645YLPM/ABLPM 1024K 32-pin DS1645Y/AB) DS1645YLPM) DS1645Y DS1645YLPM/ABLPM

    NMC27C010

    Abstract: No abstract text available
    Text: NMC27C010 PRELIMINARY O T National À jÌ Semiconductor NMC27C010 Former NMC27C1023 * 1,048,576-Bit (128k x 8) UV Erasable CMOS PROM General Description Features The NMC27C010 is a high-speed 1024k UV erasable and electrically reprogrammable CMOS EPROM, ideally suited


    OCR Scan     		PDF NMC27C010 NMC27C1023) 576-Bit NMC27C010 1024k 32-pin TL/D/9182-10

    transistor t 2190

    Abstract: intel 2114 SmartDie 28F010
    Text: inte] 28F010 1024K 128K x 8 FLASH MEMORY SmartDie Product Specification Flash Electrical Chip Erase — 1 Second Typical Chip Erase Quick-Pulse Programming Algorithm — 10ns Typical Byte Program — 2 Second Chip Program 100K Erase/Program Cycles Typical


    OCR Scan     		PDF 28F010 1024K X2BF010-90 ER-20 ER-24, RR-60, AP-316, AP-325, USA/DP-019/694 transistor t 2190 intel 2114 SmartDie

    Untitled

    Abstract: No abstract text available
    Text: D S 3803 PRELIMINARY DALLAS SEMICONDUCTOR DS3803 1024K Flexible NV SRAM SIMM FEATURES PIN ASSIGNMENT • Flexibly organized as 32K x 32, 64K x 16 or 128K x 8 bits _ r ~ • 10 years m inimum data retention in the absence of external power • Nonvolatile circuitry transparent to and independent


    OCR Scan     		PDF DS3803 1024K 72-PIN