OAOLP2
Abstract: temperature digital display JUMO Lan M smd transistor 1p7 bti ml-2 transistor SMD 1p6 transistor DK qe smd edto 116.4 8052ah basic toba 639 270645
Text: MCS@51 MICROCONTROLLER FAMILY USER’S MANUAL ORDER NO.: 272383-002 FEBRUARY 1994 Intel Corporation makes no warrsnfy for the uee of ite products and assumes no responsibility for any ewors which may appear in this document nor does it make a commitment to update the information contained herein.
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15consecutive
OAOLP2
temperature digital display JUMO Lan M
smd transistor 1p7
bti ml-2
transistor SMD 1p6
transistor DK qe smd
edto 116.4
8052ah basic
toba 639
270645
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IL102
Abstract: SHC298 SHC298A SHC298AM SHC298AJP SHC298JP SHC298JU
Text: SHC298 SHC298A B U R R -B R O W N j • B B B • LESS THAN 1f pS ACQUISITION TIME • WIDEBAND NOISE LESS THAN 20pVrms • RELIABLE MONOLITHIC CONSTRUCTION • 101oO INPUT RESISTANCE • TTL/CMOS-COMPATIBLE LOGIC INPUT M ode C o n tro l S /H ) Input O ffset A djust
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SHC298
SHC298A
12-BIT
20pVrms
101oO
SHC298A
IL102
SHC298AM
SHC298AJP
SHC298JP
SHC298JU
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Untitled
Abstract: No abstract text available
Text: A M D il ADVANCE INFORM ATIO N M i i .i i n - i i i i n i i in.i i i « Am29DL162C/Am29DL163C 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Sim ultaneous Operation Flash Mem ory DISTINCTIVE CHARACTERISTICS A R C H ITEC TU R A L AD VA N TA G ES
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Am29DL162C/Am29DL163C
16-Bit)
29DL162C/Am
29DL163C
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Untitled
Abstract: No abstract text available
Text: COMPONENTS B U R R -B R O W N H INA258WG/883B INA258WL/883B INA2S8WQ INA258WL INA258VG/883B INA2S8VL/883B INA258VG INA258VL INA258UG/883B ÌNA258UL/883B INA258UG INA2S8UL INA258/883B H INA258/883B SER IES MODEL NUM BERS: REVISIO N B JAN U ARY, 1989 Very-High Accuracy Military
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INA258WG/883B
INA258WL/883B
INA258WL
INA258VG/883B
INA2S8VL/883B
INA258VG
INA258VL
INA258UG/883B
NA258UL/883B
INA258UG
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80386DXL
Abstract: WT 7525 80286 microprocessor paging mechanism microprocessor 80288 INTEL 386DX Audi b5 8086 microprocessor pin description interfacing of memory devices with 80286 power module hd 110M TAG 8816
Text: ADVANCE] MICRO D E V I C E S 4ÖE D • G 2 57 52 5 G 0 4 1 3 0 4 5 ■ A U D I T - ^ - n -y \ Am386 DXL Advanced Micro Devices High-Performance, Low-Power, 32-Bit Microprocessor DISTINCTIVE CHARACTERISTICS ■ Ideal for portable PCs -True static design for long battery life
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02S75BS
Am386â
32-Bit
386DX
i386SX
132-pin
20-MHz
16-bit
BS16to
Am386DXL
80386DXL
WT 7525
80286 microprocessor paging mechanism
microprocessor 80288
INTEL 386DX
Audi b5
8086 microprocessor pin description
interfacing of memory devices with 80286
power module hd 110M
TAG 8816
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pc-24-450
Abstract: No abstract text available
Text: P.C. Power Transformers— Concentric or Split Bobbin & FORM-TRAN Construction STYLE B NO CHANNEL FRAME PAR ALLEL CO N N ECTED SERIES CO N N EC TED STYLE E CHANNEL FRAME DPC-8 PINS C O N N EC TED CO N N ECTED R ECO M M EN D ED P.C. HOLE DIA = .052 HOW TO ORDER
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115/230V
pc-24-450
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SILVER MICA capacitor high voltage
Abstract: 2091J Silver mica capacitor 1000pF 100V ARCO Mica capacitors Arco mica capacitor
Text: 72E D • 0=500^72 0 0 0 0 7 0 1 74^ ■ _ UC SERIES CHIP MICA CAPACITORS A small package with . . . SUPERIOR HIGH FREQUENCY CHARACTERISTICS IN A CH IP. Natural mica exhibits superior and stable electrical charac teristics as well as excellent high frequency performance.
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100WV
500WV
SILVER MICA capacitor high voltage
2091J
Silver mica capacitor 1000pF 100V
ARCO Mica capacitors
Arco mica capacitor
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Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION AMDZ1 Am29DL16xC 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Sim ultaneous Operation Flash Mem ory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • — Data can be continuously read from one bank w hile executing erase/program functions in other bank.
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Am29DL16xC
16-Bit)
20-year
FBC048.
40-pin
29DL16xC
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Untitled
Abstract: No abstract text available
Text: Data Sheet June 1999 microelectronics group Lucent Technologies Bell Labs Innovations ORCA Series 3C and 3T Field-Programmable Gate Arrays Features • High-performance, cost-effective, 0.35 pm OR3C and 0.3 pm (OR3T) 4-level metal technology, (4- or 5-input
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GD3T75fci
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SHC298A
Abstract: No abstract text available
Text: SHC298 SHC298A B U R R -B R O W N | Monolithic SAMPLE/HOLD AMPLIFIER Offset Adjust These sam ple/holds will operate over a wide supply voltage ranging from ±5V to ±18V with very little change in performance. A separate Offset Adjust pin is used to adjust the offset in either the Sample or
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SHC298
SHC298A
SHC298AM
SHC298JP
SHC298JU
SHC298AJP,
SHC298
SHC298A
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JESD-95
Abstract: No abstract text available
Text: ADVANCE INFORMATION AMDZ1 Am29DL16xC 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Sim ultaneous Operation Flash Mem ory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank w hile
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Am29DL16xC
16-Bit)
29DL16xC
JESD-95
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Untitled
Abstract: No abstract text available
Text: PR ELIM IN ARY A M D il Am29DL16xC 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS A R C H ITEC TU R A L A D VANTAG ES • ■ ■ Sim ultaneous R ead/W rite o perations — Data can be continuously read from one bank w hile
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Am29DL16xC
16-Bit)
29DL16xC
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BR16 switch transistors
Abstract: Lucent wifi PB11D R2C15 PTC 8750 R5C13 5s805 W847 R12G5
Text: microelectronics Preliminary Data Sheet November 1997 group L u c e n t T t o c h n û lo a ie s Bell Late Innovations ORG&Q R3Cxx 5 V and OR3Txxx (3.3 V) Series Field-Programmable Gale Arrays Features • High-performance, cost-effective, 0.35 nm 4-level
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16-bit
p65900
DS97-282FPGA
BR16 switch transistors
Lucent wifi
PB11D
R2C15
PTC 8750
R5C13
5s805
W847
R12G5
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LM1808
Abstract: LM1800 TRANSISTOR LM371 ks2 6k MC7812CP LM3026 SN52101AJ transistor bf 175 LM170 Germanium drift transistor
Text: Edge Index by Product Family Here is the new Linear Data Handbook from National. It gives complete specifications for devices useful in building nearly all types of electronic systems, from communications and consumer oriented circuits to precision instrumentation and computer designs.
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LM741
MIL-M-38510,
M-38510/
10101BCC.
MIL-M-38510
L-M-38510
LM1808
LM1800
TRANSISTOR LM371
ks2 6k
MC7812CP
LM3026
SN52101AJ
transistor bf 175
LM170
Germanium drift transistor
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY A M D il Am29DL16xC 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Minimum 1 million write cycles guaranteed per sector ■ ■ 20 Year data retention at 125°C
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Am29DL16xC
16-Bit)
DL162.
29DL16xC
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TOSHIBA TLCS-870 SPEC
Abstract: pt 2097
Text: TOSHIBA 8 Bit Microcontroller 870C Series TMP86CH47AUG TOSHIBA CORPORATION TMP86CH47AUG The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No
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TMP86CH47AUG
TOSHIBA TLCS-870 SPEC
pt 2097
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet, Rev. 1 September 1998 m i c r o e l e c t r o n i c s group Lucent Technologies Bell Labs Innovations ORCA Series 3 Field-Programmable Gate Arrays Features • High-performance, cost-effective, 0.35 OR3C and 0.3 urn (OR3T) 4-level metal technology, with a migra
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208-Pin
240-Pin
256-Pin
352-Pin
432-Pin
600-Pin
PS208
PS240
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6N0 953 235
Abstract: No abstract text available
Text: Preliminary Data Sheet microelectronics group Lucent Technologies Bell Labs Innovations ORCA OR3Cxx 5 V and OR3Txxx (3.3 V) Series Field-Programmable Gate Arrays Features • High-performance, cost-effective, 0.35 nm 4-level metal technology, with a migration plan to 0.25 urn
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16-bit
208-Pin
240-Pin
256-Pin
352-Pin
432-Pin
600-Pin
PS208
PS240
BA256
6N0 953 235
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Untitled
Abstract: No abstract text available
Text: ALUMINUM ELECTROLYTIC CAPACITORS NT nichicon mm Screw Term inal Type, W ide Tem perature Range series High Ripple Client • Load life of 5.000 hours {2,000 hours for 10-250V application of ripple current at + 105C. • Extended voltage range from 10V up to 450V.
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0-250V)
leakage70_
90X190
90X170
90X220
90X230
90X220"
93X250"
00X220
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AMD marking CODE flash AM29DL
Abstract: 29DL163
Text: A D V A N C E IN F O R M A T IO N AMD* Am29DL162C/Am29DL163C 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Sim ultaneous Operation Flash Mem ory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • ■ ■ Simultaneous Read/Write operations
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Am29DL162C/Am29DL163C
16-Bit)
29DL162C/Am
29DL163C
AMD marking CODE flash AM29DL
29DL163
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Untitled
Abstract: No abstract text available
Text: in te i 80C186EC/80C188EC AND 80L186EC/80L188EC 16-BIT HIGH-INTEGRATION EMBEDDED PROCESSORS • Fully Static Operation ■ True CMOS Inputs and Outputs ■ —40°C to + 85°C Operating Temperature Range Integrated Feature Set: — Low-Power, Static, Enhanced 8086
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80C186EC/80C188EC
80L186EC/80L188EC
16-BIT
32-Bit
80C186EC/188EC,
80L186EC/188EC
80C186EC/80L186EC
0002H
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