Toshiba TC528267J
Abstract: TC528267J 1g17s TC528267 0027T11 D271S W1A01 STO511 TC528267FT
Text: TOSHIBA SILICON GATE CMOS TC528267 t a r g e t s p e c 262,144WORDS x 8BITS MULTIPORT DRAM DESCRIPTION The TC528267 is a 2M bit CM OS m ultiport m emory equipped w ith a 262,144-w ords by 8-bits dynam ic random access mem ory RAM port and a 512-words by 8-bits static serial access m emory (SA M ) port. The
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TC528267
144WORDS
TC528267
144-words
512-words
TC52B267J/
Z/n7TR-70
tC52S267J/SZ/FT/TR-M
Toshiba TC528267J
TC528267J
1g17s
0027T11
D271S
W1A01
STO511
TC528267FT
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Untitled
Abstract: No abstract text available
Text: _ _ • TOSHIBA ^0^7240 DD2öb3S 315 T C 5 9 S 1 6 1 6 A F T -1 0 , -1 2 T C 5 9 S 1 6 0 8 A F T -1 0 , -12 T C 5 9 S 1 6 0 4 A F T -1 0 , -12 PRELIMINARY 524,288 WORDS X 2 BANK X 16 BITS 1,048,576 WORDS X 2 BANK X 8 BITS 2,097,152 WORDS X 2 BANK X 4 BITS SYNCHRONOUS DRAM
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TC59S1616AFT
288-words
x16-bits
TC59S1608AFT
576-words
andTC59S1604FT
100M-words
SD16010496
TC59S1616AFT,
TC59S1608AFT,
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TC5116100
Abstract: No abstract text available
Text: TOSHIBA TC5116100J/Z/FT-60/70 16,777,216 WORD X 1 BIT DYNAMIC RAM DESCRIPTION The TC5116100J/Z/FT is the new generation dynamic RAM organized 16,777,216 word by 1 bit. The TC5116100J/Z/FT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit
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TC5116100J/Z/FT-60/70
TC5116100J/Z/FT
TC5116100J/Z/FT.
TC5116100
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Untitled
Abstract: No abstract text available
Text: TOSHIBA cIOtì 7 2 4 f l 0Q2R00S 370 TC58A040F PRELIMINARY 4Mbit 4M x 1 BIT CMOS AUDIO NAND EEPROM Description The TC58A040 is a single 5 volt 4M bit NAND Electrically Erasable and Programmable Read Only Memory (NAND EEPROM) organized as 256 bits x 128 pages x 128 blocks.
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0Q2R00S
TC58A040F
TC58A040
NV04010196
OP28-P-45Q
0QETD31
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Untitled
Abstract: No abstract text available
Text: /TOS H I B A ÍLOGIC/HEHORY3- 14E D TD^7SMä D o n a l i 4 TOSHIBA MOS MEMORY PRODUCTS TC55257APL-85L/APL-1OL/APL-12L TC55257AFL-85L/AFL-1OL/AFL-12L 1d e s c r i p t i o n ! The TC55257APL is 262,144 bit static random access memory organized as 32,768 words by 8 bits using CMOS technology, and operated from a single 5V supply. Advanced
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TC55257APL-85L/APL-1OL/APL-12L
TC55257AFL-85L/AFL-1OL/AFL-12L
TC55257APL
output6-23-14
101724a
TC55257APL-85L/APL-10I/APL-12L
TC55257AFL-85L/AFL-1
Ol/AFL-12L
6D28A-P)
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC5117400J/Z/FT-60/70 4,194,304 WORD X 4 BIT DYNAMIC RAM DESCRIPTION The TC5117400J/Z/FT-60/70 is the new generation dynamic RAM organized 4,194,304 woid by 4 bit. The TC5117400J/Z/FT-60/70 utilizes Toshiba’s CMOS silicon gate process technology as well as advanced
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TC5117400J/Z/FT-60/70
TC5117400J/Z/FT-60/70
TC5117400J/Z/FT.
Q0254fcjfl
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Untitled
Abstract: No abstract text available
Text: • DDBMñññ ÖSE ■ T O S E " . TOSHIBA LOGIC/riEMORY » TC524162 TC524165 b'iE SILICON GATE CMOS 262,144 WORDS x 16 BITS MULTIPORT DRAM t a r g e t DESCRIPTION The TC524162/165 is a 4M bit CMOS multiport memory equipped with a 262,144-words by 16-bits
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TC524162
TC524165
TC524162/165
144-words
16-bits
512-words
16-bits
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT THM3251F5BS/BSG-60/70 PRELIMINARY 524,288 WORD X 32 BIT DYNAMIC RAM MODULE Description The THM3251F5BS/BSG is a 524,288 word by 32 bit dynamic RAM module which is assembled with 1 pc of TC5118325BJ on the printed circuit board. This module utilizes Toshiba's 512 x 32 DRAM and is optimized to replace modules based on older DRAM
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THM3251F5BS/BSG-60/70
THM3251F5BS/BSG
TC5118325BJ
1128mW
THMxxxxxx-60)
990mW
THMxxxxxx-70)
DM02020396
QQ3D20t>
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY SILICON GATE CMOS x 1 BIT/1,048,576 WORD X 4 BIT CMOS STATIC RAM Description TheTC551402J is a 4,194,304 bits high speed static random access memory, it is possible to change the organization between 4,194,304 words by 1 bit and 1,048,576 words by 4 bits using CMOS technology, and operated from a single 5-volt
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TheTC551402J
TC551402J
1G17EMÃ
SR04010995
TC551402J-25
SOJ32-P-400A)
38MAX
1D17H4Ã
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Untitled
Abstract: No abstract text available
Text: TOSHIBA =10=17240 O D S M T M b 264 • T 0 S 2 TOSHIBA L 0 6 I C / M E M 0 R Y tR E SILICON GATE CMOS 262,144 WORDS x 16 BITS MULTIPORT DRAM TC524262 TC524265 D t a r g e t DESCRIPTION The TC524262/265 is a 4M bit CMOS multiport memory equipped with a 262,144-words by 16-bits
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TC524262
TC524265
TC524262/265
144-words
16-bits
512-words
16-bits
TC524262
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