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    1014 BATTERY Search Results

    1014 BATTERY Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    BATTERY-FUEL-GAUGE-IC-STARTER-KIT Renesas Electronics Corporation Starter Kit for Battery Fuel Gauge IC Visit Renesas Electronics Corporation
    PM2.5-Monitor-with-Portable-Battery Renesas Electronics Corporation PM2.5 Monitor with Portable Battery Reference Design Visit Renesas Electronics Corporation
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    1014 BATTERY Price and Stock

    ITT Interconnect Solutions 102-1014-000

    1021014000; MIL-DTL 26482 Series I & Mil Battery;
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 102-1014-000 1,862
    • 1 $25.12
    • 10 $24.38
    • 100 $16.9
    • 1000 $16.9
    • 10000 $16.9
    		Buy Now

    ITT Interconnect Solutions 103-1014-000

    1031014000; MIL-DTL 26482 Series I & Mil Battery;
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 103-1014-000 633
    • 1 $36.95
    • 10 $35.85
    • 100 $24.86
    • 1000 $24.86
    • 10000 $24.86
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    1014 BATTERY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FM28V020-T

    Abstract: No abstract text available
    Text: FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM Organized as 32K x 8 1014 Read/Write Cycles NoDelay Writes Page Mode Operation Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules


    Original     		PDF FM28V020 256Kbit 32Kx8 28-pin -T28G) 32-pin FM28V020-T

    FM28V100-TG

    Abstract: RAMTRON
    Text: FM28V100 1Mbit Bytewide F-RAM Memory Features 1Mbit Ferroelectric Nonvolatile RAM Organized as 128Kx8 High Endurance 100 Trillion 1014 Read/Writes NoDelay Writes Page Mode Operation to 33MHz Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules


    Original     		PDF FM28V100 128Kx8 33MHz 32-pin FM28V100 FM28V100-TG RAMTRON

    CDEP105-3R2MC-88

    Abstract: 10TPD150M LTC3835 LTC3835-1 Si4840DY DN1014
    Text: advertisement 80µA Quiescent Current Synchronous Step-Down Controller Extends Battery Life in Automotive Applications – Design Note 1014 Julian Zhu Introduction Battery powered applications that have a significant amount of time in standby mode, require electrical circuits


    Original     		PDF LTC3835 100mV/ DN1014 dn1014f CDEP105-3R2MC-88 10TPD150M LTC3835-1 Si4840DY

    FM28V020-SG

    Abstract: FM28V020-SGTR FM28V020 FM18L08
    Text: Preliminary FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32Kx8 • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 40MHz • Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules


    Original     		PDF FM28V020 256Kbit 32Kx8 40MHz FM28V020 28-pin MS-013D FM28V020, FM28V020-SG FM28V020-SG FM28V020-SGTR FM18L08

    Untitled

    Abstract: No abstract text available
    Text: Preliminary FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32Kx8 • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules


    Original     		PDF FM28V020 256Kbit 32Kx8 33MHz 32Kx8 28-pin FM28V020 32-pin

    Untitled

    Abstract: No abstract text available
    Text: Pre-Production FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32K x 8  1014 Read/Write Cycles  NoDelay Writes  Page Mode Operation  Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules


    Original     		PDF FM28V020 256Kbit FM28V020 FM28V020-TG, FM28V020-TG A9482296TG 32Kx8

    Untitled

    Abstract: No abstract text available
    Text: Pre-Production FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32K x 8  1014 Read/Write Cycles  NoDelay Writes  Page Mode Operation  Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules


    Original     		PDF FM28V020 256Kbit FM28V020 FM28V020-TG, FM28V020-TG A9482296TG 32Kx8

    FM28V020-SG

    Abstract: FM18L08 FM28V020 FM28V020-SGTR FM28V020-T FM28V020-TGTR
    Text: Preliminary FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32Kx8 • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules


    Original     		PDF FM28V020 256Kbit 32Kx8 33MHz FM28V020 FM28V020-TG, FM28V020-T A09316340282 FM28V020-SG FM18L08 FM28V020-SGTR FM28V020-T FM28V020-TGTR

    FM28V020-TG

    Abstract: AEC-Q100-002 FM18L08 FM28V020 FM28V020-SG FM28V020-SGTR FM28V020TG AEC-Q100-003
    Text: Pre-Production FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32K x 8  1014 Read/Write Cycles  NoDelay Writes  Page Mode Operation  Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules


    Original     		PDF FM28V020 256Kbit FM28V020 FM28V020-TG, FM28V020-TG A9482296TG 32Kx8 FM28V020-TG AEC-Q100-002 FM18L08 FM28V020-SG FM28V020-SGTR FM28V020TG AEC-Q100-003

    FM21L16

    Abstract: No abstract text available
    Text: Pre-Production FM21L16 2Mbit F-RAM Memory Features 2Mbit Ferroelectric Nonvolatile RAM Organized as 128Kx16 Configurable as 256Kx8 Using /UB, /LB 1014 Read/Write Cycles NoDelay Writes Page Mode Operation to 33MHz Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM21L16 128Kx16 256Kx8 33MHz FM21L16

    AN1014

    Abstract: APP1014 MAX1692 MAX1729 MAX1749 MAX1879 1014 battery dc-dc-converter blockdiagram
    Text: Maxim > App Notes > BATTERY MANAGEMENT POWER-SUPPLY CIRCUITS Keywords: portable power supply, wireless contact manager, shockfish SA, shockfish, PDA, Spotme, Max1879, max1729, max1749, max1692, portable power Mar 27, 2002 APPLICATION NOTE 1014 Design Case Study: Designing a Power Supply for a Portable, Wireless Contact


    Original     		PDF Max1879, max1729, max1749, max1692, com/an1014 MAX1692: MAX1729: MAX1749: MAX1879: AN1014, AN1014 APP1014 MAX1692 MAX1729 MAX1749 MAX1879 1014 battery dc-dc-converter blockdiagram

    FM28V100-TG

    Abstract: FM28V100-TGTR tca 335 A
    Text: FM28V100 1Mbit Bytewide F-RAM Memory Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8  High Endurance 100 Trillion 1014 Read/Writes  NoDelay Writes  Page Mode Operation to 33MHz  Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM28V100 128Kx8 33MHz 128Kx8 32-pin FM28V100 FM28V100, FM28V100-TG A9482296TG FM28V100-TGTR tca 335 A

    fm18W08-pg

    Abstract: FM18W08
    Text: FM18W08 PDIP 256Kb Wide Voltage Bytewide F-RAM Features 256Kbit Ferroelectric Nonvolatile RAM Organized as 32,768 x 8 bits High Endurance 100 Trillion (1014) Read/Writes 38 year Data Retention @ +75C NoDelay Writes Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM18W08 256Kb 256Kbit 32Kx8 28-pin FM18ess fm18W08-pg FM18W08

    Untitled

    Abstract: No abstract text available
    Text: Pre-Production FM18W08 256Kb Wide Voltage Bytewide F-RAM Features 256Kbit Ferroelectric Nonvolatile RAM Organized as 32,768 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 38 year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM18W08 256Kb 256Kbit 32Kx8 28-piness

    Untitled

    Abstract: No abstract text available
    Text: Pre-Production FM16W08 64Kb Wide Voltage Bytewide F-RAM Features 64Kbit Ferroelectric Nonvolatile RAM Organized as 8,192 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 38 year Data Retention (@ +75C) NoDelay Writes Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM16W08 64Kbit

    FM28V010

    Abstract: 16KX8 16kx8 ram FM28V020
    Text: Preliminary FM28V010 128Kbit Bytewide F-RAM Memory Features 128Kbit Ferroelectric Nonvolatile RAM • Organized as 16,384 x 8 • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM28V010 128Kbit 33MHz 16Kx8 28-pin MS-013D FM28V010, FM28V010-SG A102196464473 FM28V010 16kx8 ram FM28V020

    TSOP-II 44 layout

    Abstract: FM28V102
    Text: Preliminary FM28V102 1Mbit 64Kx16 F-RAM Memory FEATURES 1Mbit Ferroelectric Nonvolatile RAM Organized as 64Kx16 Configurable as 128Kx8 Using /UB, /LB 1014 Read/Write Cycles NoDelay Writes Page Mode Operation to 33MHz Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM28V102 64Kx16 128Kx8 33MHz 44-pin TSOP-II 44 layout FM28V102

    FM28V020-SG

    Abstract: AEC-Q100-002 FM18L08 FM28V020 FM28V020-SGTR
    Text: Pre-Production FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32K x 8 • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM28V020 256Kbit 33MHz FM28V020 FM28V020-TG, FM28V020-TG A9482296TG 32Kx8 FM28V020-SG AEC-Q100-002 FM18L08 FM28V020-SGTR

    FM28V100

    Abstract: No abstract text available
    Text: Preliminary FM28V100 1Mbit Bytewide F-RAM Memory Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8 • High Endurance 100 Trillion 1014 Read/Writes • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM28V100 128Kx8 33MHz 128Kx8 FM28V100 32-pin FM28V100, FM28V100-T A08316340282

    FM28V100-TG

    Abstract: FM28V100 FM28V100-T FM18L08 FM20L08 A16-A3
    Text: Preliminary FM28V100 1Mbit Bytewide F-RAM Memory Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8 • High Endurance 100 Trillion 1014 Read/Writes • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM28V100 128Kx8 33MHz FM28V100 while13 128Kx8 32-pin FM28V100, FM28V100-T FM28V100-TG FM28V100-T FM18L08 FM20L08 A16-A3

    Untitled

    Abstract: No abstract text available
    Text: n FM16W08 PDIP 64Kb Wide Voltage Bytewide F-RAM Features 64Kbit Ferroelectric Nonvolatile RAM Organized as 8,192 x 8 bits High Endurance 100 Trillion (1014) Read/Writes 38 year Data Retention @ +75C NoDelay Writes Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM16W08 64Kbit 28-pin FM16Wess

    Untitled

    Abstract: No abstract text available
    Text: FM28V100 1Mbit Bytewide F-RAM Memory Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8  High Endurance 100 Trillion 1014 Read/Writes  NoDelay Writes  Page Mode Operation to 33MHz  Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM28V100 128Kx8 33MHz FM28V100 FM28V100, FM28V100-TG A9482296TG 128Kx8

    FM28V202

    Abstract: FM28V202TG TSOP-II 44 Recommended PCB Footprint
    Text: Preliminary FM28V202 2Mbit 128Kx16 F-RAM Memory FEATURES 2Mbit Ferroelectric Nonvolatile RAM Organized as 128Kx16 Configurable as 256Kx8 Using /UB, /LB 1014 Read/Write Cycles NoDelay Writes Page Mode Operation to 33MHz Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM28V202 128Kx16 256Kx8 33MHz -40ess FM28V202 FM28V202TG TSOP-II 44 Recommended PCB Footprint

    FM22L16-55-TG

    Abstract: FM20L08 FM22L16 256KX16
    Text: Preliminary FM22L16 4Mbit F-RAM Memory Features 4Mbit Ferroelectric Nonvolatile RAM • Organized as 256Kx16 • Configurable as 512Kx8 Using /UB, /LB • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 40MHz • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM22L16 256Kx16 512Kx8 40MHz 256Kx16 FM22L16 FM22L16, FM22L16-55-TG FM22L16-55-TG FM20L08