80C85

Abstract: timing diagram of call instruction in 8085 microprocessor INSTRUCTION SET 8085 with opcode 80c85 8085 8085 opcode sheet free 8085 mnemonic opcode 8085 microprocessor opcode sheet opcode sheet 8085 8085 opcode sheet for addition of two numbers TCA 321
Contextual Info: [ /Title HS80C85 RH /Subject (Radiation Hardened 8Bit CMOS Microprocessor) /Autho r () /Keywords (Intersil Corporation, semiconductor, Radiation Hardened, RH, Rad Hard, QML, Satellite, SMD, Class T UCT ROD RODUC P E P T E E OL UT OBS UBSTIT RH S 8 E 0C 6

y4 smd transistor

Abstract: smd g2a smd g2b 30373 y0 smd transistor y4 smd y6 smd transistor smd transistor y5 HS SMD SMD Transistor Y6
Contextual Info: HS-54C138RH T CT DUC PRO PRODU E T E E 8 L T 3 t 1 O U OBS UBSTIT S/HCTS Center a S C port c H s E t , / L 8 om 13 Sheetup SIB Data POS S/ACTS hnical S intersil.c . AC ur Tec www ct o RSIL or a t n E co 8-INT 1-88 Radiation Hardened 3-Line to 8-Line Decoder/Demultiplexer

Contextual Info: Provisional Data Sheet No. PD-9.1432 International IQ R Rectifier \ dv/dt R A T E D HEXFET* TRANSISTOR R E P E T IT IV E A V A L A N C H E A N D IRHNA7264SE N -C H A N N E L S IN G L E E V E N T E F F E C T S E E R A D H A R D 250Volt, 0.1100, (SEE) RAD HARD HEXFET

Contextual Info: International SIRectifier Provisional Data Sheet No. PD-9.1400 IRHY9130CM JANSR2N7382 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR [REF: MIL-PRF-19500/615] P-CHANNEL RAD HARD •100 Volt, 0.30Q, RAO HARD HEXFET International Rectifier’s P-Channel RAD HARD technology

Contextual Info: Provisional Data Sheet No. PD - 9.1564B International l R Rectifier dv/dt R A TE D HEXFET TRANSISTOR IRHM7064 IRHM8064 REPETITIVE A V A L A N C H E AND N -C H A N N E L MEGA RAD HARD 60Volt, 0.021 il, MEGA RAD HARD HEXFET International R ectifie r’s RAD HARD technology

Contextual Info: International IOR Rectifier Provisional Data Sheet No. PD-9.720B REPETITIV E AVALANCHE AND d v /d t RATED IRHN7150 IRHN8150 HEXFET TRANSISTOR N -CH A N N EL M EGA RAD HARD 100 Volt, 0.0550, MEGA RAD HARD HEXFET International Rectifier’s MEGA RAO HARD technology

y4 smd

Abstract: y6 smd transistor y6 smd y4 smd transistor smd g2b smd g2a Y5 smd 30373 smd y7 smd transistor y5
Contextual Info: [ /Title HS54C13 8RH /Subject (Radiation Hardened 3Line to 8-Line Decod er/Dem ultiplexer) /Autho r () /Keywords (Intersil Corporation, semiconductor, Radiation Hardened, RH, Rad Hard, QML, Satellite, SMD, HS-54C138RH T CT DUC PRO PRODU E T E E 8 L T 3 O

level shifter . CMOS to TTL

Abstract: CD40116 HS-3374RH level shifter from TTL to CMOS TTL USB Level Converter 5962R9678601QWC 5962R9678601VWC SA2996 30382
Contextual Info: UCT NT R O D A C EM E a t P E r T L E P t en e OL RE OBS ENDED upport C om/tsc lS MM sil.c ECO echnica w.inter R O T w N r w Sheet uData I L or act o cont -INTERS 8 1-88 August 2000 Two control inputs, ENABLE and DISABLE, are used to determine the direction of data flow, and to set both the in

Contextual Info: International IOR Rectifier Pro, *. dv/dt R ATED HEXFET TRANSISTOR R E P E T IT IV E A V A L A N C H E A N D IRH N A7264SE N-CHANNEL S IN G L E E V E N T E F F E C T S E E R A D H A R D 250Volt, 0.11 on, (SEE) RAD HARD HEXFET International Rectifier’s (SEE) RAD HARD technology

STATIC RAM 8464

Abstract: IMS1433 SSM6116 IMS1630 SSM6171 SSM7188 hitachi selection guide SSM7164 hm6264 ic 6116 ram
Contextual Info: 16K Product S e le c tio n -C ro s s Reference Guide 16K Static RAM — Product Selection Typical Power mW Maximum Speed (ns) Part No/'» L7C167 Description Packages Available121 Com. Mil. Oper. Inactive Pins 8 10 135 75 20 DIP, LCC SOIC (Gull-Wing) SOJ (J-Lead)

Contextual Info: bitemational »Rectifier Provisional Data Sheet No. PD-9.1400 IRHY9130CM JANSR2N7382 REPETITIVE AVALANCHE AND dv/dt RATED HEX PET TRANSISTOR [REF: MIL-PRF-19500/615] P-CHANNEL _ RAD HARD -100 Volt, 0.30ft, RAD HARD HEXFET International Rectifier’s P-Channel RAO HARD technology

Contextual Info: HARRIS S E M I C O N D U C T O R HARRIS HCSOO RCA GE PRELIMINARY INTERSIL HCS04 High Reliability, Radiation Hardened High Speed CMOS SOS Gates with CMOS Compatible Inputs HCS08 Aerospace Class S Screening HCS27 Radiation Features HCS02 HCS32 • Radiation hardened to 200k or 1 M RADs Si

8085 opcode sheet free

Abstract: HS1-80C85RH-8 80c85 HS-80C85RH 8085 opcode sheet instructions 8085 TCA 321 5962R9582401QQC 5962R9582401QXC HS80C85RH
Contextual Info: T UCT ROD RODUC P E P T E E OL UT r at OBS UBSTIT H or e n te c S R C 6 t E 8 r /t s Sheet 0C po IBL S SData H -8 i c a l S u p e r s i l . c o m PO S t n n h i . c ur Te or w ww IL ac t o c o n t - IN T E R S 8 8 8 1- HS-80C85RH Radiation Hardened 8-Bit CMOS

FRM6756D

Abstract: FRM6756H FRM6756M FRM6756R 1E1A
Contextual Info: Radiation-Hardened MOSFETs FRM6756M, FRM6756D FRM6756R, FRM6756H File Number 2173 Radiation-Hardened N-Channel Power MOSFETs Radiation-Hardened to: 1 Megarad Si 2 x 1012 Neutrons 14 A, 100 V rDs(on) = 0.18 f i N-CHANNEL ENHANCEMENT MODE Features: • Linear transfer characteristics

Contextual Info: Provisional Data Sheet PD 9.679C International I R Rectifier irhn725o dv/dt RATED HEXFET TRANSISTOR IRHN8250 REPETITIVE AVALANCHE AND N-CHANNEL MEGA RAD HARD Product Summary 200 Volt, 0.1 On, MEGA RAD HARD HEXFET International Rectifier’s M EG A RAD HARD technology

Contextual Info: Provisional Data Sheet No. PD - 9.1393C International IGR Rectifier IRHM7264SE R E P E T IT IV E A V A LA N C H E A N D d v / d t R A T E D HEXFET TRANSISTOR N -C H A N N E L S IN G L E E V E N T E F F E C T S E E R A D H A R D 250Volt, 0.11Q, (SEE) RAD HARD HEXFET

Contextual Info: Into f nQ t iO nQ I I R Rectifier Provisional Data Sheet No. PD-9.886A IRHN9130 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR p -c h a n n e l RAD HARD Product Sum m ary -100Volt,0.30Q, RAD HARD H EX FET International Rectifier’s P-channel RA D H A RD tech­

Contextual Info: Provisional Data Sheet No. PD-9.1447 International IQR Rectifier IRHNA9064 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR Pa-W M SB_ RAO HARD -60Volt, 0.055Q, RAD HARD HEXFET International Rectifier's P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability

Contextual Info: MAXWELL LABS INC/ S-CUBED 37E • SÔ7C1721 QQQQQ3fl 7 Q S C U B «m i 'T-65-/3 S-CUBED Division RADIATION HARDENED HYBRID NUCLEAR EVENT DETECTOR Model HSN-500 FEATURES • Detects ionizing radiation pulses • Tested/certified detection threshold level

hc 7400

Contextual Info: htemational \tq r ]Rectifier Provisional Data Sheet No. PD-9.1416 IRHNA7064 IRHNA8064 R E P E T IT IV E A V A L A N C H E AN D dv/dt R A T E D HEXFET*TRANSISTOR N -C H A N N E L M EG A RAD HARD 60 Volt, 0.0150, MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology

Contextual Info: Provisional Data Sheet No. PD-9.1446 In te rn a tio n a l IO R Rectifier IRHI7360SE R E P E T I T I V E A V A L A N C H E A N D dv/dt R A T E D HEXFET TRANSISTOR N -C H A N N E L _ S IN G L E E V E N T E F F E C T S E E R A P H A R D

Contextual Info: Provisional Data Sheet No. PD - 9.1394C International I R Rectifier IRHM7460SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL S IN G L E E V E N T E F F E C T S E E R A D H A R D 500Volt, 0 .3 2 a (SEE) RAD HARD HEXFET International Rectifier's (SEE) RAD HARD technology

Contextual Info: Provisional Data-Sheet No. PD-9.1396 International lö R Rectifier dv/dt R A T E D HEXFET TRANSISTOR IRHNA7160 IRHNA8160 R E P E T IT IV E A V A LA N C H E A N D N -C H A N N E L MEGA RAD HARD 100 Volt, 0.045ft, MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology

MIL-STD-750

Abstract: MIL-STD-750 2072
Contextual Info: Microsemi m m m Santa Ana, CA m P fogress Powered b y Tûùhtiùiûÿy MX043J MX043G 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 Features Harris FSC260R die total dose : 100 kRAD(Si) w ithin pre-radiation param eter lim its