IRF540G
Abstract: Application Note of IRF540 IRF540 T1 IRF540 RF1S540SM RF1S540SM9A
Text: IRF540, RF1S540SM Data Sheet 28A, 100V, 0.077 Ohm, N-Channel Power MOSFETs [ /Title IRF54 0, RF1S5 40SM /Subject (28A, 100V, 0.077 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFETs, TO220AB , TO263AB ) /Creator ()
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IRF540,
RF1S540SM
IRF54
O220AB
O263AB
IRF540G
Application Note of IRF540
IRF540
T1 IRF540
RF1S540SM
RF1S540SM9A
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PDF
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p40nf10
Abstract: STD40NF10 D40NF JESD97 STP40NF10 TF415
Text: STD40NF10 STP40NF10 N-channel 100V - 0.025Ω - 50A TO-220 / DPAK Low gate charge STripFET II Power MOSFET Features Type VDSS RDS on Max ID STD40NF10 100V <0.028Ω 50A STP40NF10 100V <0.028Ω 50A • Exceptional dv/dt capability ■ Low gate charge ■
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STD40NF10
STP40NF10
O-220
O-220
p40nf10
STD40NF10
D40NF
JESD97
STP40NF10
TF415
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PDF
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TA17421
Abstract: IRF140 datasheet IRF140 IRF140 INTERSIL
Text: IRF140 Data Sheet March 1999 28A, 100V, 0.077 Ohm, N-Channel Power MOSFET • 28A, 100V Formerly developmental type TA17421. • rDS ON = 0.077Ω • Single Pulse Avalanche Energy Rated • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds
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IRF140
TA17421.
O-204AE
TA17421
IRF140 datasheet
IRF140
IRF140 INTERSIL
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PDF
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IRF140
Abstract: irf140 ir IRF1401
Text: PD - 90369 IRF140 100V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF140 BVDSS 100V RDS(on) 0.077Ω ID 28A The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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IRF140
O-204AA/AE)
param252-7105
IRF140
irf140 ir
IRF1401
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Untitled
Abstract: No abstract text available
Text: PD - 90369 IRF140 100V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF140 BVDSS 100V RDS(on) 0.077Ω ID 28A The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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IRF140
O-204AA/AE)
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IRF540 mosfet with maximum VDS 12v
Abstract: IRF540 Applications Note of IRF540 MOSFET IRF540 TA17421 IRF540 mosfet irf540 pdf switch irf541 IRF542 IRF543
Text: IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM Semiconductor 25A and 28A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETs November 1997 Features Description • 25A and 28A, 80V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
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IRF540,
IRF541,
IRF542,
IRF543,
RF1S540,
RF1S540SM
IRF540 mosfet with maximum VDS 12v
IRF540
Applications Note of IRF540
MOSFET IRF540
TA17421
IRF540 mosfet
irf540 pdf switch
irf541
IRF542
IRF543
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PDF
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IRF541
Abstract: IRF540 mosfet with maximum VDS 12v IRF5402 IRF540 T1 IRF540 IRF542 IRF543 IRF540 mosfet with maximum VDS 30 V RF1S540 RF1S540SM
Text: IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM S E M I C O N D U C T O R 25A and 28A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETs November 1997 Features Description • 25A and 28A, 80V and 100V These are N-Channel enhancement mode silicon gate
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IRF540,
IRF541,
IRF542,
IRF543,
RF1S540,
RF1S540SM
TA17421.
IRF541
IRF540 mosfet with maximum VDS 12v
IRF5402
IRF540
T1 IRF540
IRF542
IRF543
IRF540 mosfet with maximum VDS 30 V
RF1S540
RF1S540SM
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Rad Hard in Fairchild for MOSFET
Abstract: No abstract text available
Text: FSJ9160D, FSJ9160R 44A, -100V, 0.055 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs December 2001 Features Description • 44A, -100V, rDS ON = 0.055Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs
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FSJ9160D,
FSJ9160R
-100V,
Rad Hard in Fairchild for MOSFET
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IRF540G
Abstract: IRF540 mosfet with maximum VDS 30 V IRF540 T1 IRF540 RF1S540 RF1S540SM RF1S540SM9A Applications Note of IRF540
Text: NS ESIG D W R NE UCT D FO E PROD E D N T MME BSTITU U ECOSheet S N R Data E T 4 NO SIBL IRF5 POS 28A, 100V, 0.077 Ohm, N-Channel Power MOSFETs [ /Title IRF54 0, RF1S5 40SM /Subject (28A, 100V, 0.077 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (Intersil
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IRF540,
RF1S540SM
IRF54
O220AB
O263AB
RF1S540SM
IRF540G
IRF540 mosfet with maximum VDS 30 V
IRF540
T1 IRF540
RF1S540
RF1S540SM9A
Applications Note of IRF540
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IRF540
Abstract: T1 IRF540 IRF542 IRF541 IRF543 RF1S540 RF1S540SM IRF540 harris Applications Note of IRF540 IRF540 MOSFET
Text: IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM S E M I C O N D U C T O R 25A and 28A, 80V and 100V 0.077Ω and 0.100Ω N-Channel Power MOSFETs March 1996 Features Packages JEDEC TO-220AB • 25A and 28A, 80V and 100V SOURCE DRAIN GATE • rDS ON = 0.077Ω and 0.100Ω
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IRF540,
IRF541,
IRF542,
IRF543,
RF1S540,
RF1S540SM
O-220AB
IRF540
T1 IRF540
IRF542
IRF541
IRF543
RF1S540
RF1S540SM
IRF540 harris
Applications Note of IRF540
IRF540 MOSFET
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PDF
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TA17421
Abstract: sec IRFP140 IRFP140 TB334
Text: [ /Title IRFP1 40 /Subject (31A, 100V, 0.077 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (31A, 100V, 0.077 Ohm, NChannel Power MOSFET, Intersil Corporation, TO247) /Creator () /DOCI NFO IGNS DES W E T OR N DUC ED F TE PRO D N MME BSTITU ECOSheet SU
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IRFP14
TA17421
sec IRFP140
IRFP140
TB334
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PDF
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P40NF10
Abstract: JESD97 STP40NF10 p40nf
Text: STP40NF10 N-channel 100V - 0.025Ω - 50A TO-220 Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID STP40NF10 100V <0.028Ω 50A • Exceptional dv/dt capability ■ Low gate charge at 100°C 3 ■ Application oriented characterization
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STP40NF10
O-220
P40NF10
JESD97
STP40NF10
p40nf
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PDF
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IRF5M3710
Abstract: isd 1740 4.5v to 100v input regulator
Text: PD - 94234 HEXFET POWER MOSFET THRU-HOLE TO-254AA IRF5M3710 100V, N-CHANNEL Product Summary Part Number BVDSS IRF5M3710 100V RDS(on) 0.03Ω ID 35A* Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance
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O-254AA)
IRF5M3710
O-254AA.
MIL-PRF-19500
IRF5M3710
isd 1740
4.5v to 100v input regulator
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IRF5N3710
Abstract: 4.5v to 100v input regulator
Text: PD - 94235A HEXFET POWER MOSFET SURFACE MOUNT SMD-1 IRF5N3710 100V, N-CHANNEL Product Summary Part Number BVDSS IRF5N3710 100V RDS(on) 0.028Ω ID 45A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance
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4235A
IRF5N3710
IRF5N3710
4.5v to 100v input regulator
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Untitled
Abstract: No abstract text available
Text: PD - 94234 HEXFET POWER MOSFET THRU-HOLE TO-254AA IRF5M3710 100V, N-CHANNEL Product Summary Part Number BVDSS IRF5M3710 100V RDS(on) 0.03Ω ID 35A* Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance
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O-254AA)
IRF5M3710
O-254AA.
MIL-PRF-19500
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PDF
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BUZ21
Abstract: TA9854 TB334
Text: BUZ21 Semiconductor Data Sheet 19A, 100V, 0.100 Ohm, N-Channel Power MOSFET October 1998 File Number 2420.1 Features • 19A, 100V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 0.100Ω (BUZ21) field effect transistor designed for applications such as
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BUZ21
BUZ21)
TA9854.
BUZ21
TA9854
TB334
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 94235A HEXFET POWER MOSFET SURFACE MOUNT SMD-1 IRF5N3710 100V, N-CHANNEL Product Summary Part Number BVDSS IRF5N3710 100V RDS(on) 0.028Ω ID 45A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance
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4235A
IRF5N3710
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PDF
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2E12
Abstract: FSJ9160D FSJ9160D1 FSJ9160D3 FSJ9160R FSJ9160R1 Rad Hard in Fairchild for MOSFET
Text: FSJ9160D, FSJ9160R 44A, -100V, 0.055 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 44A, -100V, rDS ON = 0.055Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
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FSJ9160D,
FSJ9160R
-100V,
2E12
FSJ9160D
FSJ9160D1
FSJ9160D3
FSJ9160R
FSJ9160R1
Rad Hard in Fairchild for MOSFET
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PDF
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2E12
Abstract: FSJ9160D FSJ9160D1 FSJ9160D3 FSJ9160R FSJ9160R1
Text: FSJ9160D, FSJ9160R 44A, -100V, 0.055 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 44A, -100V, rDS ON = 0.055Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
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FSJ9160D,
FSJ9160R
-100V,
2E12
FSJ9160D
FSJ9160D1
FSJ9160D3
FSJ9160R
FSJ9160R1
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PDF
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IRF140
Abstract: IRF141 IRF143 IRF142 to204ae IRF140 HARRIS IRF140 ir
Text: IRF140, IRF141, IRF142, IRF143 h a r r is SEM C0NDUCT0R 28A and 25A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETs Juiy 1998 Features Description • 28A and 25A, 80V and 100V • High Input Impedance These are N-Channel enhancement mode silicon gate
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OCR Scan
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077i2
IRF140,
IRF141,
IRF142,
IRF143
IRF140
IRF141
IRF143
IRF142
to204ae
IRF140 HARRIS
IRF140 ir
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PDF
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IRF540
Abstract: Applications Note of IRF540 irf541 RF1S540SM9A RF1S540SM IRF542 IRF543 irf540 be IRF540 Rg RF1S540
Text: IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM HARRIS S E M I C O N D U C T O R 25A and 28A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETs November 1997 Description Features • 25A and 28A, 80V and 100V These are N-Channel enhancement mode silicon gate
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OCR Scan
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IRF540,
IRF541,
IRF542,
IRF543,
RF1S540,
RF1S540SM
TA1742E
RF542,
IRF540
Applications Note of IRF540
irf541
RF1S540SM9A
RF1S540SM
IRF542
IRF543
irf540 be
IRF540 Rg
RF1S540
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PDF
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Untitled
Abstract: No abstract text available
Text: FSJ9160D, FSJ9160R 44A, -100V, 0.055 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 44A, -100V, rQs^oN = 0.055i2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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OCR Scan
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FSJ9160D,
FSJ9160R
-100V,
MIL-S-19500
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PDF
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Untitled
Abstract: No abstract text available
Text: IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM H A F R F R IS S E M I C O N D U C T O R 25A and 28A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETs November 1997 Description Features 25A and 28A, 80V and 100V These are N-Channel enhancement mode silicon gate
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OCR Scan
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IRF540,
IRF541,
IRF542,
IRF543,
RF1S540,
RF1S540SM
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PDF
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VOLTAGE LEVEL RELAY SM 125 230
Abstract: No abstract text available
Text: u FSJ9160D, FSJ9160R H a r r is .«»,co.ucTo» 44A, -100V, 0.055 Ohm, Rad Harel, SEGR Resistant, P-Channel Power MOSFETs Ju ne 1 998 Features Description • 44A, -100V, rDS 0 N = 0.055£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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OCR Scan
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FSJ9160D,
FSJ9160R
-100V,
MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
VOLTAGE LEVEL RELAY SM 125 230
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