100v 23A P-Channel MOSFET
Abstract: No abstract text available
Text: Semiconductor FRF9150D, FRF9150R, FRF9150H 23A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 23A, -100V, rDS ON = 0.140Ω TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot
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Original
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FRF9150D,
FRF9150R,
FRF9150H
-100V,
O-254AA
1000K
3000K
O-254AA
MIL-S-19500
100v 23A P-Channel MOSFET
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PDF
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Rad Hard in Fairchild for MOSFET
Abstract: No abstract text available
Text: FRF9150D, FRF9150R, FRF9150H 23A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFETs December 2001 Features Package • 23A, -100V, rDS ON = 0.140Ω TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot
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Original
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FRF9150D,
FRF9150R,
FRF9150H
-100V,
O-254AA
1000K
3000K
Rad Hard in Fairchild for MOSFET
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PDF
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100v 23A P-Channel MOSFET
Abstract: Rad Hard in Fairchild for MOSFET FRF9150R 17 17751 21 2E12 FRF9150D FRF9150H FRF9150
Text: FRF9150D, FRF9150R, FRF9150H 23A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 23A, -100V, rDS ON = 0.140Ω TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
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Original
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FRF9150D,
FRF9150R,
FRF9150H
-100V,
O-254AA
1000K
3000K
100v 23A P-Channel MOSFET
Rad Hard in Fairchild for MOSFET
FRF9150R
17 17751 21
2E12
FRF9150D
FRF9150H
FRF9150
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PDF
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100v 23A P-Channel MOSFET
Abstract: 2E12 FRF9150D FRF9150H FRF9150R
Text: FRF9150D, FRF9150R, FRF9150H 23A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 23A, -100V, rDS ON = 0.140Ω TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
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Original
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FRF9150D,
FRF9150R,
FRF9150H
-100V,
O-254AA
1000K
3000K
100v 23A P-Channel MOSFET
2E12
FRF9150D
FRF9150H
FRF9150R
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT23P09 Preliminary POWER MOSFET -23A, -100V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UT23P09 is a P-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance.
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Original
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UT23P09
-100V
UT23P09
UT23P09L-TA3-T
UT23P09G-TA3-T
O-220
QW-R502-844
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PDF
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Untitled
Abstract: No abstract text available
Text: AP25N10GS/P-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low Gate Charge BVDSS D 100V RDS ON Simple Drive Requirement Fast Switching Characteristic ID G RoHS Compliant & Halogen-Free 80m 23A S Description
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Original
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AP25N10GS/P-HF
O-220
O-263
AP25N10GP)
100ms
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PDF
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100v 23A P-Channel MOSFET
Abstract: IRFI5210 IRF5210 of what package type b 1370
Text: PD - 9.1404A IRFI5210 PRELIMINARY HEXFET Power MOSFET l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm P-Channel Fully Avalanche Rated D VDSS = -100V RDS on = 0.06Ω G ID = -23A
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IRFI5210
-100V
O-220
100v 23A P-Channel MOSFET
IRFI5210
IRF5210 of what package type
b 1370
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PDF
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IRFI5210
Abstract: IRF5210
Text: PD - 9.1404A IRFI5210 PRELIMINARY HEXFET Power MOSFET l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm P-Channel Fully Avalanche Rated D VDSS = -100V RDS on = 0.06Ω G ID = -23A
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Original
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IRFI5210
-100V
O-220
IRFI5210
IRF5210
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PDF
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b 1370
Abstract: IRFI5210
Text: PD - 9.1404A IRFI5210 PRELIMINARY HEXFET Power MOSFET l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm P-Channel Fully Avalanche Rated D VDSS = -100V RDS on = 0.06Ω G ID = -23A
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Original
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IRFI5210
-100V
O-220
b 1370
IRFI5210
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PDF
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IRF9540N
Abstract: datasheet of irf9540n IRF9540n datasheet 7A, 100v fast recovery diode irf9540n to220ab ir D 92 M - 02 DIODE
Text: PD - 91437B IRF9540N HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -100V RDS on = 0.117Ω G ID = -23A S Description Fifth Generation HEXFETs from International Rectifier
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Original
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91437B
IRF9540N
-100V
O-220
IRF9540N
datasheet of irf9540n
IRF9540n datasheet
7A, 100v fast recovery diode
irf9540n to220ab ir
D 92 M - 02 DIODE
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 91437B IRF9540N HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -100V RDS on = 0.117Ω G ID = -23A S Description Fifth Generation HEXFETs from International Rectifier
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Original
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91437B
IRF9540N
-100V
O-220
commercial-industria245,
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PDF
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IRFP9140N
Abstract: 100v 23A P-Channel MOSFET
Text: PD - 9.1492A IRFP9140N PRELIMINARY HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature P-Channel Fast Switching Fully Avalanche Rated D VDSS = -100V RDS on = 0.117Ω G ID = -23A S Description Fifth Generation HEXFETs from International Rectifier
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Original
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IRFP9140N
-100V
O-247
IRFP9140N
100v 23A P-Channel MOSFET
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PDF
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IRFP9140N
Abstract: SEC IRF9540N
Text: PD - 9.1492A IRFP9140N PRELIMINARY HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature P-Channel Fast Switching Fully Avalanche Rated D VDSS = -100V RDS on = 0.117Ω G ID = -23A S Description Fifth Generation HEXFETs from International Rectifier
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Original
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IRFP9140N
-100V
O-247
IRFP9140N
SEC IRF9540N
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PDF
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IRF9540N
Abstract: 100v 23A P-Channel MOSFET SEC IRF9540N datasheet of irf9540n IRF9540n datasheet irf9540n to220ab ir
Text: PD - 91437B IRF9540N HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -100V RDS on = 0.117Ω G ID = -23A S Description Fifth Generation HEXFETs from International Rectifier
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Original
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91437B
IRF9540N
-100V
O-220
IRF9540N
100v 23A P-Channel MOSFET
SEC IRF9540N
datasheet of irf9540n
IRF9540n datasheet
irf9540n to220ab ir
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PDF
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irfp9140npbf
Abstract: IRF9540N
Text: PD - 95665 IRFP9140NPbF l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature P-Channel Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -100V RDS on = 0.117Ω G Description ID = -23A S Fifth Generation HEXFETs from International Rectifier
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Original
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IRFP9140NPbF
-100V
O-247
IRF9540N
-470A/
O-247AC
IRFPE30
irfp9140npbf
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PDF
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4.5V TO 100V INPUT REGULATOR
Abstract: No abstract text available
Text: PD - 95665 IRFP9140NPbF l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature P-Channel Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -100V RDS on = 0.117Ω G Description ID = -23A S Fifth Generation HEXFETs from International Rectifier
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Original
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IRFP9140NPbF
-100V
O-247
O-247AC
IRFPE30
4.5V TO 100V INPUT REGULATOR
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PDF
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irfp9140npbf
Abstract: 4.5V TO 100V INPUT REGULATOR
Text: PD - 95665 IRFP9140NPbF l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature P-Channel Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -100V RDS on = 0.117Ω G Description ID = -23A S Fifth Generation HEXFETs from International Rectifier
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Original
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IRFP9140NPbF
-100V
O-247
O-247AC
IRFPE30
irfp9140npbf
4.5V TO 100V INPUT REGULATOR
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PDF
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DIODE 1334 LM
Abstract: 2N7323R 2E12 2N7323D 2N7323H Rad hard for Harris Rad hard MOSFETS in Harris 2N7323
Text: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRF9150 D, R, H 2N7323D, 2N7323R 2N7323H Radiation Hardened P-Channel Power MOSFETs March 1996 Features Package • 23A, -100V, rDS(ON) = 0.140Ω TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts
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Original
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FRF9150
2N7323D,
2N7323R
2N7323H
-100V,
O-254AA
1000K
3000K
3E14ights
1-800-4-HARRIS
DIODE 1334 LM
2N7323R
2E12
2N7323D
2N7323H
Rad hard for Harris
Rad hard MOSFETS in Harris
2N7323
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PDF
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Untitled
Abstract: No abstract text available
Text: FRF9150D, FRF9150R, FRF9150H 23A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 23A, -100V, rD S 0 N = 0.140S1 TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts G • Gamma • Gamma Dot
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OCR Scan
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FRF9150D,
FRF9150R,
FRF9150H
-100V,
O-254AA
140S1
1000K
3000K
-254AA
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PDF
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sm69a
Abstract: 86 diode Rad hard MOSFETS in Harris S 170 TRANSISTOR
Text: Semiconductor FRF9150D, FRF9150R, FRF9150H 23A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 23A, -100V, r D S 0 N = 0.140S2 TO-254AA • Second Generation Rad Hard M OSFET Results From New Design Concepts • G am m a
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OCR Scan
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FRF9150D,
FRF9150R,
FRF9150H
-100V,
1000K
3000K
O-254AA
MIL-S-19500
sm69a
86 diode
Rad hard MOSFETS in Harris
S 170 TRANSISTOR
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PDF
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FRF9150H
Abstract: power mosfet p channel rad hard rds
Text: Q3 HARRIS S E M I C O N D U C T O R FRF9150D, FRF9150R, FRF9150H 23A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Package Features • 23A, -100V, rp S {O N = 0.140Q TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts
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OCR Scan
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FRF9150D,
FRF9150R,
FRF9150H
-100V,
O-254AA
1000K
3000K
MIL-S-19500
I775IUIS
FRF9150H
power mosfet p channel rad hard rds
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PDF
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Untitled
Abstract: No abstract text available
Text: 2N7323D, 2N7323R 2N7323H H a r r is S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRF9150 D, R, H Radiation Hardened P-Channel Power MOSFETs March 1996 Package Features • 23A, -100V, Tos(ON) = 0.140& TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts
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OCR Scan
|
2N7323D,
2N7323R
2N7323H
FRF9150
-100V,
O-254AA
1000K
3000K
1-800-4-HARRIS
|
PDF
|
2N7323
Abstract: No abstract text available
Text: m l- L A J R F R IS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRF9150 D, R, H 2N7323D, 2N7323R 2N7323H Radiation Hardened P-Channel Power MOSFETs December 1992 Package Features • 23A, -100V, ROS(on) « 0.140Q TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts
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OCR Scan
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FRF9150
2N7323D,
2N7323R
2N7323H
O-254AA
-100V,
300KRAD
1000KRAD
3000KRAD
35MeV/mg/cmJandUNCLAMPED
2N7323
|
PDF
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Untitled
Abstract: No abstract text available
Text: f f i h a r r is U U S E M I C O N D U C T O R FRF250D, FRF250R, F fí F2S0H 23A, 200V, 0.115 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 23A, 200V, RDS on = 0.115£1 TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts
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OCR Scan
|
FRF250D,
FRF250R,
O-254AA
100KRAD
300KRAD
1000KRAD
3000KRAD
MIL-S-19500
FRF250H
|
PDF
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