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    IRFI5210 Search Results

    IRFI5210 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IRFI5210 International Rectifier -100V Single P-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Original PDF
    IRFI5210 International Rectifier HEXFET Power MOSFET Original PDF
    IRFI5210 Toshiba Power MOSFETs Cross Reference Guide Original PDF

    IRFI5210 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRFI5210

    Abstract: IRF5210
    Text: PD - 9.1404A IRFI5210 PRELIMINARY HEXFET Power MOSFET l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm P-Channel Fully Avalanche Rated D VDSS = -100V RDS on = 0.06Ω G ID = -23A


    Original     		PDF IRFI5210 -100V O-220 IRFI5210 IRF5210

    b 1370

    Abstract: IRFI5210
    Text: PD - 9.1404A IRFI5210 PRELIMINARY HEXFET Power MOSFET l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm P-Channel Fully Avalanche Rated D VDSS = -100V RDS on = 0.06Ω G ID = -23A


    Original     		PDF IRFI5210 -100V O-220 b 1370 IRFI5210

    100v 23A P-Channel MOSFET

    Abstract: IRFI5210 IRF5210 of what package type b 1370
    Text: PD - 9.1404A IRFI5210 PRELIMINARY HEXFET Power MOSFET l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm P-Channel Fully Avalanche Rated D VDSS = -100V RDS on = 0.06Ω G ID = -23A


    Original     		PDF IRFI5210 -100V O-220 100v 23A P-Channel MOSFET IRFI5210 IRF5210 of what package type b 1370

    IRFI5210

    Abstract: No abstract text available
    Text: Previous Datasheet Index Next Data Sheet PRELIMINARY PD 9.1404 IRFI5210 HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l P-Channel l Fully Avalanche Rated


    Original     		PDF IRFI5210 -100V IRFI5210

    sumida 94V-0

    Abstract: inverter using irfz44n MOSFET IRF9430 IRF7414 irfp460 dc welding circuit diagram IRFP264 inverter circuits IRFP450 inverter Three phase inverter using irfp450 mosfet Diagram Sumida ul94v-0 inverter IRF 544 N MOSFET
    Text: International Rectifier The IGBT SIP & HEXPak Navigator Effective 8 September, EXISTING Products NEW Products UPCOMING Products POTENTIAL Products released to production in last 6-9 months to be released within next 3-4 months no current plans. see bus.mgmt.


    Original     		PDF IRFK2D054 IRFK2F054 CPV362M4U CPV363M4U CPV364M4U CPV362M4F CPV363M4F CPV364M4F CPV362M4K CPV363M4K sumida 94V-0 inverter using irfz44n MOSFET IRF9430 IRF7414 irfp460 dc welding circuit diagram IRFP264 inverter circuits IRFP450 inverter Three phase inverter using irfp450 mosfet Diagram Sumida ul94v-0 inverter IRF 544 N MOSFET

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    IRFBE30 equivalent

    Abstract: irf9640 REPLACEMENT GUIDE IRGKI200F06 IRGP440U replacement IRF3205 smd IRGBC20FD2 IRFK3D450 IRFBg30 equivalent IRGNIN150M06 irc540
    Text: Electronic Switches Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  HEXFET Power MOSFETs Description Gen Package Document # Pages Date 11 10 12 7 May-97 May-97 91615 91650 91651 90454 90592 90565 90566


    Original     		PDF May-97 Sep-95 Sep-94 IRFBE30 equivalent irf9640 REPLACEMENT GUIDE IRGKI200F06 IRGP440U replacement IRF3205 smd IRGBC20FD2 IRFK3D450 IRFBg30 equivalent IRGNIN150M06 irc540

    IRF4905 equivalent

    Abstract: 800v irf IRFBE30 equivalent transistor equivalent irf510 IRF3415 equivalent IRF3205 IRF1010E IRFP064N equivalent IRFBg30 equivalent IRF3205 equivalent
    Text: International Rectifier The HEXFET Through Hole Navigator COLOR CODING: EXISTING Products NEW Products released to production in last 6-9 months UPCOMING Products to be released within next 3-4 months POTENTIAL Products no current plans. see bus.mgmt.


    Original     		PDF O-220 O-247 IRL3302 IRL3202 9169IRFPC50LC IRFBC40LC IRFIBC40GLC IRFBE30 IRFIBE30G IRF4905 equivalent 800v irf IRFBE30 equivalent transistor equivalent irf510 IRF3415 equivalent IRF3205 IRF1010E IRFP064N equivalent IRFBg30 equivalent IRF3205 equivalent

    IRF1010E

    Abstract: irf 4110 irfbf30 IRFPF50 irf7333 IRFP044N IRF4905 equivalent Irf520N IRFD110 IRF7606
    Text: HEXFET Power MOSFETs www.irf.com ID ID V BR DSS Continuous RΘ PD Drain-to-Source R DS(on) Continuous On-State Drain Current Drain Current Max. Thermal Max. Power Breakdown 70° Part Resistance Voltage Resistance 1 Dissipation 1 25°C (A) (V) (Ω ) (°C/W)


    Original     		PDF IRLML2402* IRLML2803 IRLML6302* IRLML5103 IRL3303L IRL3103L IRL2203NL IRL3803L IRLZ24NL IRLZ34NL IRF1010E irf 4110 irfbf30 IRFPF50 irf7333 IRFP044N IRF4905 equivalent Irf520N IRFD110 IRF7606

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.1404A International IQ R Rectifier IRFI5210 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm P-Channel Fully Avalanche Rated Vdss = -1 0 0 V RüS on = 0.06Î2


    OCR Scan     		PDF IRFI5210 O-220

    EA MOSFET 63 ng

    Abstract: IRFI5210
    Text: P D - 9 .1 4 0 4 A International Rectifier TOR IRFI5210 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS <S> Sink to Lead Creepage Dist. = 4.8mm P-Channel Fully Avalanche Rated V dss = -1 0 0 V


    OCR Scan     		PDF IRFI5210 EA MOSFET 63 ng IRFI5210

    FI840

    Abstract: 250PA10
    Text: i . I International IOR Rectifier PRELIMINARY PD 9 .1 4 0 4 IRFI5210 HEXFET Power MOSFET • Advanced Process Technology • Ultra Low On-Resistance • Isolated Package • High Voltage Isolation = 2.5KVRMS d> • Sink to Lead Creepage Dist. = 4.8mm • P-Channel


    OCR Scan     		PDF IRFI5210 FI840 250PA10