transistor Ic 1A datasheet NPN
Abstract: 2SD689 2SB679 transistor Ic 1A datasheet current amplifier note darlington darlington 5v drive IC 1A datasheet NPN Transistor 1A 100V medium power high voltage transistor npn transistor 0.1A 100V
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 1000 Min @ IC= 1A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 100V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat) = 1.5V(Max)@ IC= 1A
|
Original
|
2SB679
transistor Ic 1A datasheet NPN
2SD689
2SB679
transistor Ic 1A datasheet
current amplifier note darlington
darlington 5v drive
IC 1A datasheet
NPN Transistor 1A 100V
medium power high voltage transistor
npn transistor 0.1A 100V
|
PDF
|
Ic 1A
Abstract: 100v 1a darlington transistor 100v 1a transistor 2SB1411 transistor pnp 1a
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -100V(Min) ·High DC Current Gain: hFE= 1500(Min)@ (VCE= -3V, IC= -1A) ·Low Collector Saturation Voltage: VCE(sat)= -1.5V(Max)@ (IC= -1A, IB= -2mA)
|
Original
|
-100V
-100V;
Ic 1A
100v 1a darlington transistor
100v 1a transistor
2SB1411
transistor pnp 1a
|
PDF
|
2SB1286
Abstract: 2SD1646
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain:hFE = 1000 Min @ IC= -1A ·Collector-Emitter Breakdown Voltage:V(BR)CEO = -100V(Min) ·Low Collector-Emitter Saturation Voltage
|
Original
|
-100V
2SD1646
2SB1286
-100V;
2SB1286
2SD1646
|
PDF
|
2SD1765
Abstract: 2SB1287
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain:hFE = 1000 Min @ IC= -1A ·Collector-Emitter Breakdown Voltage:V(BR)CEO = -100V(Min) ·Low Collector-Emitter Saturation Voltage
|
Original
|
-100V
2SD1765
2SB1287
-100V;
2SD1765
2SB1287
|
PDF
|
2SD2398
Abstract: 2SB1567
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -100V(Min) ·High DC Current Gain: hFE= 1000(Min)@ (VCE= -2V, IC= -1A) ·Complement to Type 2SD2398 APPLICATIONS
|
Original
|
-100V
2SD2398
Dissipati2SB1567
-100V;
2SD2398
2SB1567
|
PDF
|
DARLINGTON 3A 100V npn
Abstract: hfe 2500 NTE264
Text: NTE263 NPN & NTE264 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE263 (NPN) and NTE264 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and low–speed switching applications.
|
Original
|
NTE263
NTE264
NTE263)
NTE264)
DARLINGTON 3A 100V npn
hfe 2500
NTE264
|
PDF
|
FXT704
Abstract: ZTX704 100v 1a darlington transistor DSA003757
Text: PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FXT704 ISSUE 1 FEB 94 FEATURES * 100 Volt VCEO * Gain of 3K at IC=1 Amp * Ptot= 1 Watt APPLICATIONS * Lamp, solenoid and relay drivers * Replacement of TO126 and TO220 darlington transistors REFER TO ZTX704 FOR GRAPHS
|
Original
|
FXT704
ZTX704
-100V,
-10mA*
-10mA,
-100mA,
20MHz
FXT704
100v 1a darlington transistor
DSA003757
|
PDF
|
NTE2341
Abstract: npn darlington TO92 NTE2342
Text: NTE2341 NPN & NTE2342 (PNP) Silicon Complementary Transistors Darlington Driver Description: The NTE2341 (NPN) and NTE2342 (PNP) are silicon complementary Darlington transistors in a TO92 type package designed for general purpose, low frequency applications and as relay drivers.
|
Original
|
NTE2341
NTE2342
NTE2341
500mA,
100MHz
npn darlington TO92
NTE2342
|
PDF
|
2SB1567
Abstract: No abstract text available
Text: TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2SB1567 Silicon PNP Darlington Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEo=-100V(Min) • High DC Current Gain-
|
Original
|
2SB1567
-100V
2SD2398
O-220F
2SB1567
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PNP DARLINGTON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HP107 █ APPLICATIONS High Voltage switching.Motor driving. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-220 Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature……………………………… 150℃
|
Original
|
HP107
O-220
-100V
-30mA,
-100V,
-80mA
|
PDF
|
NPN Transistor 8A
Abstract: HP102 npn transistor 100v min npn 100v 1.5a DARLINGTON 3A 100V npn NPN Transistor 1A 100V
Text: NPN DARLINGTON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HP102 █ APPLICATIONS High Voltage switching.Motor driving. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-220 Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature……………………………… 150℃
|
Original
|
HP102
O-220
NPN Transistor 8A
HP102
npn transistor 100v min
npn 100v 1.5a
DARLINGTON 3A 100V npn
NPN Transistor 1A 100V
|
PDF
|
BDX67
Abstract: npn 120v 10a transistor transistor bdx67 BDX66 NPN Transistor VCEO 80V 100V NPN Transistor VCEO 80V 100V DARLINGTON BDX67C BDX67B darlington power transistor 10a transistor bdx66
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 1000 Min @ IC= 10A ·Low Saturation Voltage ·Complement to Type BDX66/A/B/C APPLICATIONS ·Designed for audio output stages and general amplifier
|
Original
|
BDX66/A/B/C
BDX67
BDX67C
BDX67A
BDX67B
BDX67
npn 120v 10a transistor
transistor bdx67
BDX66
NPN Transistor VCEO 80V 100V
NPN Transistor VCEO 80V 100V DARLINGTON
BDX67C
BDX67B
darlington power transistor 10a
transistor bdx66
|
PDF
|
NTE262
Abstract: NTE261 DARLINGTON 3A 100V npn
Text: NTE261 NPN & NTE262 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE261 (NPN) and NTE262 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and low–speed switching applications.
|
Original
|
NTE261
NTE262
100mA
NTE262
NTE261
DARLINGTON 3A 100V npn
|
PDF
|
CJF6388
Abstract: CJF6668
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR DARLINGTON POWER TRANSISTOR CJF6668 TO-220FP Fully Isolated Plastic Package Complementary CJF6388 General Purpose Darlington Amplifier and Switching Applications
|
Original
|
CJF6668
O-220FP
CJF6388
C-120
CJF6668Rev
CJF6388
CJF6668
|
PDF
|
|
|
CJF6388
Abstract: CJF6668
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PNP SILICON PLANAR DARLINGTON POWER TRANSISTOR CJF6668 TO-220FP Fully Isolated Plastic Package Complementary CJF6388 General Purpose Darlington Amplifier and Switching Applications
|
Original
|
ISO/TS16949
CJF6668
O-220FP
CJF6388
C-120
CJF6668Rev
CJF6388
CJF6668
|
PDF
|
CJF6388
Abstract: CJF6668
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR DARLINGTON POWER TRANSISTOR CJF6388 TO-220FP Fully Isolated Plastic Package Complementary CJF6668 General Purpose Darlington Amplifier and Switching Applications
|
Original
|
ISO/TS16949
CJF6388
O-220FP
CJF6668
C-120
CJF6388Rev
CJF6388
CJF6668
|
PDF
|
TIP117
Abstract: TIP116 TIP115 TIP-115 NPN Transistor TO220 VCEO 80V 100V PNP NPN Transistor VCEO 80V 100V Ic 2A tip117 TRANSISTOR equivalent NPN Transistor VCEO 80V 100V DARLINGTON 2A 80v complementary transistor tip115 transistor
Text: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP115/116/117 HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE= -4V, IC= -1A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-220 Complementary to TIP110/111/112
|
Original
|
TIP115/116/117
O-220
TIP110/111/112
TIP116
TIP117
TIP115
-100V,
TIP117
TIP116
TIP115
TIP-115
NPN Transistor TO220 VCEO 80V 100V
PNP NPN Transistor VCEO 80V 100V Ic 2A
tip117 TRANSISTOR equivalent
NPN Transistor VCEO 80V 100V DARLINGTON
2A 80v complementary transistor
tip115 transistor
|
PDF
|
NPN Transistor VCEO 80V 100V
Abstract: darlington power pack NPN Transistor VCEO 80V 100V DARLINGTON CJF6388 CJF6668
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR DARLINGTON POWER TRANSISTOR CJF6388 TO-220FP Fully Isolated Plastic Package Complementary CJF6668 General Purpose Darlington Amplifier and Switching Applications
|
Original
|
CJF6388
O-220FP
CJF6668
C-120
CJF6388Rev
NPN Transistor VCEO 80V 100V
darlington power pack
NPN Transistor VCEO 80V 100V DARLINGTON
CJF6388
CJF6668
|
PDF
|
nte2544
Abstract: No abstract text available
Text: NTE2544 Silicon NPN Transistor Darlington Driver Features: D Darlington Conncetion D High DC Current Gain D Low Dependence of DC Current Gain on Temperature Applications: D Motor Driver D Printer Hammer Driver D Relay Driver Absolute Maximum Ratings: TA = +25°C unless otherwise specified
|
Original
|
NTE2544
nte2544
|
PDF
|
ULN2003NA
Abstract: transistor af 178 ms4581p 8ch pnp DARLINGTON TRANSISTOR ARRAY DARLINGTON 3A 100V npn array pnp darlington array ULN ULN2004NA 54566P pnp transistor array uln TD62981P
Text: [1] INDEX 1. IFD Family Tree [ 1 ] INDEX 1. IFD Family Tree [i]n t e r -@a c e g n v e r — Transistor-Array — Monolithic Bipolar Series Array Series |T r a n s i s t o r | [ A r r a y ] |DM O S| T r a n s i s t o r |A r r a y | — Multi-Chip — Module
|
OCR Scan
|
TD62M
TD62C
TD/TB62
N29B3a
54S63PA
54597p
54598PÜ
2786A
UDN2580a
ULN2003NA
transistor af 178
ms4581p
8ch pnp DARLINGTON TRANSISTOR ARRAY
DARLINGTON 3A 100V npn array
pnp darlington array ULN
ULN2004NA
54566P
pnp transistor array uln
TD62981P
|
PDF
|
IRF9210
Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
Text: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF
|
OCR Scan
|
2N3904
2N3906
2N4401
2N4403
2N5087
2N5088
2N5551
2N6515
KSP06
KSP10
IRF9210
darlington NPN 600V 8a transistor
fet 10a 600v
darlington NPN 600V 12a transistor
transistor IRF9640
N-CH POWER MOSFET TO-92
600v 12A TO220F
NPN Transistor 600V 5A TO-220
transistor irf620
KSH117-1
|
PDF
|
FXT704
Abstract: No abstract text available
Text: PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FXT704 ISSUE 1 - FEB 94_ FEATURES * 100 V o lt VCE0 * Gain o f 3 K a t lc=1 A m p * P,0,= 1 W a tt APPLICATIONS * Lamp, solenoid and relay drivers * Replacement of T 0 1 2 6 and T 0 2 2 0 darlington transistors
|
OCR Scan
|
TX704
FXT704
-100hA
-100V,
100-C
-10mA*
-10mA,
-100mA,
20MHz
FXT704
|
PDF
|
SQD65BB75
Abstract: sqd65B
Text: TRANSISTOR M O D U L E non -ISOLATED TYPE SQP65BB75 S Q D 6 5B B is a high speed, high power Darlington transistor designed for Resonance circuit. The transistor has a reverse paralleled fast recovery diode. • VCbo= 750V, lc = 65A • Suitable for Resonance circuit applications.
|
OCR Scan
|
SQP65BB75
SQD65BB75
00DEE22
SQD65BB75
sqd65B
|
PDF
|
VQC10
Abstract: No abstract text available
Text: SOT223 PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FZT704 IS SU E 2 - SEPTEM BER 1995 FEA TU RES * 2A CONTINUOUS CURRENT * FA ST SW ITCHING * GUARANTEED HFE SPECIFIED UP TO 2A COM PLEM ENTARY TYPE - FZT604 PART MARKING D ETAIL FZT704 •= ABSOLUTE MAXIMUM RATINGS.
|
OCR Scan
|
OT223
FZT704
FZT604
FZT705
Tamb-25
VQC10
|
PDF
|
