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    100V 100A MOS FET Search Results

    100V 100A MOS FET Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    100V 100A MOS FET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 100V,20A Low RDS ON Nch Trench Power MOS FET FKG1020 Dec. 2012 Features Package  VDS-100V ID-20A  RDS(ON) -33m typ (VGS=10V ,ID=10A )  Built-in gate protection diode TO220F


    Original     		PDF FKG1020 VDS-------------------------100V ID----------------------------20A --------------------33m O220F

    100V 100A mos fet

    Abstract: No abstract text available
    Text: 100V,20A Low RDS ON Nch Trench Power MOS FET FKG1020 Dec. 2012 Features Package  VDS-100V ID-20A  RDS(ON) -33mΩ typ (VGS=10V ,ID=10A )  Built-in gate protection diode TO220F


    Original     		PDF FKG1020 VDS-------------------------100V ID----------------------------20A --------------------33m O220F 100V 100A mos fet

    Untitled

    Abstract: No abstract text available
    Text: 100V,20A Low RDS ON Nch Trench Power MOS FET EKG1020 Dec. 2012 Features Package  VDS-100V ID-20A  RDS(ON) -33m typ (VGS=10V ,ID=10A )  Built-in gate protection diode TO220


    Original     		PDF EKG1020 VDS-------------------------100V ID----------------------------20A --------------------33m

    Untitled

    Abstract: No abstract text available
    Text: 100V,20A Low RDS ON Nch Trench Power MOS FET EKG1020 Dec. 2012 Features Package  VDS-100V ID-20A  RDS(ON) -33mΩ typ (VGS=10V ,ID=10A )  Built-in gate protection diode TO220


    Original     		PDF EKG1020 VDS-------------------------100V ID----------------------------20A --------------------33m

    RDN050N20

    Abstract: No abstract text available
    Text: RDN050N20 Transistors 10V Drive Nch MOS FET RDN050N20 zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET TO-220FN 4.5 φ3.2 2.8 1.2 1.3 14.0 5.0 8.0 15.0 zFeatures 1) Low on-resistance. 2) Low input capacitance. 3) Exellent resistance to damage from static electricity.


    Original     		PDF RDN050N20 O-220FN RDN050N20

    RDN100N20

    Abstract: No abstract text available
    Text: RDN100N20 Transistors 10V Drive Nch MOS FET RDN100N20 zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET TO-220FN 4.5 φ3.2 2.8 1.2 1.3 14.0 5.0 8.0 15.0 zFeatures 1) Low on-resistance. 2) Low input capacitance. 3) Excellent resistance to damage from static electricity.


    Original     		PDF RDN100N20 O-220FN RDN100N20

    RDN150N20

    Abstract: 100V 100A mos fet
    Text: RDN150N20 Transistors 10V Drive Nch MOS FET RDN150N20 zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET TO-220FN 4.5 φ3.2 2.8 1.2 1.3 14.0 5.0 8.0 15.0 zFeatures 1) Low on-resistance. 2) Low input capacitance. 3) Exellent resistance to damage from static electricity.


    Original     		PDF RDN150N20 O-220FN RDN150N20 100V 100A mos fet

    PDM1405HA

    Abstract: No abstract text available
    Text: MOSFET MODULE PDM1405HA Dual 140A /500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Cascaded Circuit * Prevented Body Diodes of MOSFETs by SBDs, and Ultra Fast Recovery Diodes Connected in Parallel Circuit * 300KHz High Speed Switching Possible


    Original     		PDF PDM1405HA /500V 300KHz 142i/W PDM1405HA

    NTE2382

    Abstract: NTE2383
    Text: NTE2382 MOSFET N–Channel Enhancement Mode, High Speed Switch Compl to NTE2383 Description: The NTE2382 is a MOS power N–Channel FET in a TO220 type package designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid, and relay


    Original     		PDF NTE2382 NTE2383) NTE2382 NTE2383

    NTE2383

    Abstract: NTE2382
    Text: NTE2383 MOSFET P–Channel Enhancement Mode, High Speed Switch Compl to NTE2382 Description: The NTE2383 is a MOS power P–Channel FET in a TO220 type package designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid, and relay


    Original     		PDF NTE2383 NTE2382) NTE2383 NTE2382

    power mosfet 80v 150a

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KU045N10P TECHNICAL DATA N-ch Trench MOS FET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter,


    Original     		PDF KU045N10P IS80A, dI/dt200A/, power mosfet 80v 150a

    RDN120N25

    Abstract: No abstract text available
    Text: RDN120N25 Transistors 10V Drive Nch MOS FET RDN120N25 zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET TO-220FN 4.5 φ3.2 2.8 1.2 1.3 14.0 5.0 8.0 15.0 zFeatures 1) Low on-resistance. 2) Low input capacitance. 3) Exellent resistance to damage from static electricity.


    Original     		PDF RDN120N25 O-220FN RDN120N25

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KU390N10P TECHNICAL DATA N-ch Trench MOS FET General Description TENTATIVE This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter,


    Original     		PDF KU390N10P IS40A, dI/dt200A/, 390N10P

    RDN080N25

    Abstract: No abstract text available
    Text: RDN080N25 Transistors 10V Drive Nch MOS FET RDN080N25 zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET TO-220FN 4.5 φ3.2 2.8 1.2 1.3 14.0 5.0 8.0 15.0 zFeatures 1) Low on-resistance. 2) Low input capacitance. 3) Exellent resistance to damage from static electricity.


    Original     		PDF RDN080N25 O-220FN RDN080N25

    2SJ456

    Abstract: No abstract text available
    Text: 2SJ456 P- Channel Silicon MOS FET Very High-Speed Switching Applications TENTATIVE Features and Applications •Low ON-state resistance. •High-speed switching. •Surface mount type device making the following possible. • Reduction in the number of manufacturing processes for 2SJ456-applied equipment.


    Original     		PDF 2SJ456 2SJ456-applied --10V --100V --250V 2SJ456

    Untitled

    Abstract: No abstract text available
    Text: MOSFET MODULE P2H7M441L / P2H7M440L Dual 50A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Separated Circuit * Low On-Resistance and Switching 108.0 Dissipation TYPICAL APPLICATIONS Circuit * Power Supply for the Communications and the Induction Heating


    Original     		PDF 50V/500V P2H7M441L P2H7M440L P2H7M441L 150MAX -441L -440L

    1rf510

    Abstract: 1rf510 n-channel irf511 irf510 IRF512 IRF513 1RF511 20W Solenoid Driver transistor irf510 IRF510 complementary
    Text: SUPERTEX □1 INC D E l f l 7 7 3 2 c]S □□□15ÛG t, IRF510 IRF511 IRF512 IRF513 T"~ i f * d 7 N-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information W n min) Order Number / Package (max) 100V 60V 0.6Q 0.6Q 4.0A 4.0A IRF510 IRF511


    OCR Scan     		PDF IRF510 IRF511 IRF512 IRF513 O-220 IRF510 IRF511 IRF512 1rf510 1rf510 n-channel IRF513 1RF511 20W Solenoid Driver transistor irf510 IRF510 complementary

    1RF520

    Abstract: irf521 irf520 IRF523
    Text: SUPERTEX INC 01 D e | fl773STS GOOlSflH 0 IR F520 IRF521 IR F522 IR F523 R520 R521 Prelim inary N-Channel Enhancement-Mode Vertical DMOS Power FETs T “ 3 f-t* Ordering Information Order Number / Package ^DSS ^ ^DS ON *D(ON) bvms (max) (min) TO-220 TO-92


    OCR Scan     		PDF fl773STS IRF521 O-220 IRF520 IRF522 IRF523 IRF520, IRF522, 1RF520 IRF523

    IRF510

    Abstract: IRF511 irf513 irf512 IRF-510
    Text: □1 SUPERTEX INC D E £ 07732^5 □□□15ÛG t, IRF510 IRF511 IRF512 IRF513 T"~ i f * d 7 N-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Inform ation b v dss/ ^DS ON (max) W n) (min) Order Number / Package ^D G S 100V 60V 0.6Q 0.6Q 4.0A


    OCR Scan     		PDF IRF510 IRF511 IRF512 IRF513 O-220 IRF510 IRF512 IRF510. irf513 IRF-510

    IRF521

    Abstract: IRF522 irf520 IRF523 RP523 R520 R521 irf520 power G-D-S TO-92 TO-220 3 lead bend
    Text: SUPERTEX INC 01 ÇhSupertex inc. D e | fl773STS GOOlSflH 0 IRF520 IRF521 IRF522 IRF523 R520 R521 Preliminary N-Channel Enhancement-Mode Vertical DMOS Power FETs T “ 3 f-t* Ordering Information ^DSS ^ Order Number / Package bvms ^DS ON (max) *D(ON) (min)


    OCR Scan     		PDF 773STS IRF520 IRF521 IRF522 IRF523 O-220 IRF522 IRF523 RP523 R520 R521 irf520 power G-D-S TO-92 TO-220 3 lead bend

    Untitled

    Abstract: No abstract text available
    Text: FU JI [MUMmeoe 2SK2446-L,S F-lll S e rie s > Features - N-channel MOS-FET 100V 0,055£2 30A 80 W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance > Applications - Motor Control - General Purpose Power Amplifier


    OCR Scan     		PDF 2SK2446-L

    N mosfet 100v 200A

    Abstract: Mosfet 100V 50A EE-CM mosfet 200A SDF200NA10 1D20A
    Text: Æ lltro n PRQPUCT CÂTÂLQQ N-CHANNEL ENHANCEMENT MOS FET 200 A , 100V, o.onn SDF200NA10 HE • • • • • • • • RUGGED PACKAGE HI-REL CONSTRUCTION CERAMIC EYELETS LEAD BENDING OPTIONS COPPER CORED 52 ALLOY PINS LOW IR LOSSES LOW THERMAL RESISTANCE


    OCR Scan     		PDF SDF200NA10 MIL-STD-883 300ns. N mosfet 100v 200A Mosfet 100V 50A EE-CM mosfet 200A 1D20A

    R9522

    Abstract: IRF9523 R9523 IRF9522 G-D-S TO-92
    Text: SUPERTEX INC ÏÏl I>iF | a 7732TS GO OlhûS =5 IRF9522 IRF9523 R9522 R9523 Objective P-Channel Enhancement-Mode Vertical DMOS Power FETs T-37-Z? Ordering Information b v d ss/ O rd e r N u m b e r / P ackage ^DGS ^DS<ON m ax) *D(ON) (m in ) -100V 0.BC1


    OCR Scan     		PDF S773ETS IRF9522 IRF9523 R9522 R9523 T-37-Z5 O-220 -100V R9522 R9523 G-D-S TO-92

    Untitled

    Abstract: No abstract text available
    Text: SOLITRON DEVICES INC 48E D • CATALOm PRODUCT fl3bflb02 00G353b SSO « S O D _ J fO lltr a n devices. inc. N-CHANNEL ENHANCEMENT MOS FET 100V, 25A, o. ion 5DF140 SDF140 SDF140 JAA JAB JDA FEATURES • • • • • • • • RUGGED PACKAGE


    OCR Scan     		PDF fl3bflb02 00G353b 5DF140 SDF140 MIL-S-19500 IF-25A. IF-25A 300nS.