Untitled
Abstract: No abstract text available
Text: P4C164L LOW POWER 8K x 8 STATIC CMOS RAM FEATURES Common Data I/O Three-State Outputs Fully TTL Compatible Inputs and Outputs Advanced CMOS Technology Automatic Power Down Packages —28-Pin 300 and 600 mil DIP —28-Pin 450 mil SOP VCC Current Commercial/Industrial
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P4C164L
--28-Pin
a164L
P4C164L
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Untitled
Abstract: No abstract text available
Text: P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Data Retention with 2.0V Supply, 10 A Typical Current P4C164L Military Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial)
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P4C164
P4C164L
28-Pin
100ns)
536-bit
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Untitled
Abstract: No abstract text available
Text: P4C164 REVISIONS DOCUMENT NUMBER: DOCUMENT TITLE: SRAM115 P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS REV. ISSUE DATE ORIG. OF CHANGE OR 1997 DAB New Data Sheet A Oct-05 JDB Change logo to Pyramid B Jun-06 JDB Added 28-pin ceramic DIP C Aug-06 JDB Added Lead Free Designation
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P4C164
Oct-05
Jun-06
Aug-06
SRAM115
P4C164
28-pin
SRAM115
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Untitled
Abstract: No abstract text available
Text: P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Data Retention with 2.0V Supply, 10 A Typical Current P4C164L Military Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial)
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P4C164
P4C164L
28-Pin
100ns)
P4C164
536-bit
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100DM
Abstract: 1519B P4C164 P4C164L
Text: P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Common Data I/O High Speed Equal Access and Cycle Times – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial) – 12/15/20/25/35/45/70/100 ns (Military)
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P4C164
28-Pin
100ns)
32-Pin
100DM
1519B
P4C164
P4C164L
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Untitled
Abstract: No abstract text available
Text: P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Common Data I/O High Speed Equal Access and Cycle Times – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial) – 12/15/20/25/35/45/70/100 ns (Military)
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P4C164
P4C164L
28-Pin
100ns)
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Untitled
Abstract: No abstract text available
Text: P4C164/P4C164L ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Single 5V±10% Power Supply High Speed Equal Access and Cycle Times – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial) – 12/15/20/25/35/45 ns (Military)
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P4C164/P4C164L
770mW
P4C164L
P4C164L
28-Pin
100ns)
P4C164/164L
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1519B
Abstract: P4C164 P4C164L
Text: P4C164/P4C164L ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Single 5V±10% Power Supply High Speed Equal Access and Cycle Times – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial) – 12/15/20/25/35/45 ns (Military)
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P4C164/P4C164L
P4C164L
770mW
P4C164L
28-Pin
100ns)
P4C164/164L
1519B
P4C164
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P4C164L
Abstract: No abstract text available
Text: P4C164L LOW POWER 8K x 8 STATIC CMOS RAM FEATURES Common Data I/O Three-State Outputs Fully TTL Compatible Inputs and Outputs Advanced CMOS Technology Automatic Power Down Packages —28-Pin 300 and 600 mil DIP —28-Pin 330 mil SOP VCC Current Commercial/Industrial
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P4C164L
--28-Pin
SRAM116
SRAM116
P4C164L
Oct-05
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Memory
Abstract: FT6264(L)
Text: FT6264 L ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Common Data I/O High Speed (Equal Access and Cycle Times) – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial) – 12/15/20/25/35/45/70/100 ns (Military)
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FT6264
28-Pin
100ns)
32-Pin
Memory
FT6264(L)
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Untitled
Abstract: No abstract text available
Text: P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Common Data I/O High Speed Equal Access and Cycle Times – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial) – 12/15/20/25/35/45/70/100 ns (Military)
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P4C164
P4C164L
28-Pin
100ns)
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Untitled
Abstract: No abstract text available
Text: P4C164L LOW POWER 8K x 8 STATIC CMOS RAM FEATURES Common Data I/O Three-State Outputs Fully TTL Compatible Inputs and Outputs Advanced CMOS Technology Automatic Power Down Packages —28-Pin 300 and 600 mil DIP —28-Pin 450 mil SOP VCC Current Commercial/Industrial
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Original
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PDF
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P4C164L
--28-Pin
SRAM116
P4C164L
Oct-05
SRAM116
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Untitled
Abstract: No abstract text available
Text: P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Common Data I/O High Speed Equal Access and Cycle Times – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial) – 12/15/20/25/35/45/70/100 ns (Military)
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P4C164
P4C164L
28-Pin
100ns)
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FT6264
Abstract: 25l32
Text: FT6264 L ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Common Data I/O High Speed (Equal Access and Cycle Times) – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial) – 12/15/20/25/35/45/70/100 ns (Military)
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FT6264
FT6264L
28-Pin
100ns)
25l32
|
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Memory
Abstract: FT6164
Text: FT6164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Common Data I/O High Speed Equal Access and Cycle Times – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial) – 12/15/20/25/35/45/70/100 ns (Military)
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FT6164
28-Pin
100ns)
32-Pin
Memory
FT6164
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Untitled
Abstract: No abstract text available
Text: P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Data Retention with 2.0V Supply, 10 µA Typical Current P4C164L Military Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial)
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P4C164
P4C164L
28-Pin
100ns)
32-Pin
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THT355
Abstract: 107 KH Tantalum Capacitor
Text: Type THT Wet Tantalum Capacitors • M GENERAL SPECIFICATIONS C a p a c ito rs Tantalum Case Technology Hermetically Sealed Rugged Construction 200°C Operating Temperature Voltage Range: 6 to 125 VDC @ 85°C 2.4 to 75 VDC @ 200°C Wet Tantalum Up to 3 Volts Reverse
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THT365
I25P6A
THT905
I25P6B
THTI46
I25P6B
THT256*
125P6C
THT566"
I25P6F
THT355
107 KH Tantalum Capacitor
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Untitled
Abstract: No abstract text available
Text: Type THT • MallorY Wet Tantalum Capacitors GENERAL SPECIFICATIONS Tantalum Case T echnology Herm etically Sealed Rugged Construction Stable in Hostile Environm ents 200°C O perating Tem perature T he m axim um ripple current carrying capa bility at 40 kHz and 85°C is shown in the
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THT175â
125P6A
THT365*
THT905
125P6B
THT146-125P6B
THT186
125P6C
THT256
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Untitled
Abstract: No abstract text available
Text: Type THX • MallorY Wet Tantalum Capacitors GENERAL SPECIFICATIONS E x te n d e d R ang e T a n ta lu m C a s e T e c h n o lo g y H e rm e tic a lly S e a le d R u g g e d C o n s tru c tio n S ta b le in H o s tile E n v iro n m e n ts U p to 3 V o lts R e v e rs e
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THX276â
060P6A
THX107
060P6B
THX227â
060P6C
THX277
060P6F
THX106
100P6A
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mallory wet tantalum
Abstract: No abstract text available
Text: I Type THT MallorY Wet Tantalum Capacitors GENERAL SPECIFICATIONS C apacitors Tantalum Case Technology Hermetically Sealed Rugged Construction 200°C Operating Temperature Operating Temperature: -55°C to +200°C with properderating Up to 3 Volts Reverse Capability @ 85°C
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PDF
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THT175
125P6A
THT365
THT905
125P6B
THT146
THT186-125P6C
THT256M25P6C
mallory wet tantalum
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Untitled
Abstract: No abstract text available
Text: Type TLW • MallorY Wet Tantalum Capacitors GENERAL SPECIFICATIONS TYPICAL APPLICATIONS Operating T emperature: -55°Cto+175°C with proper derating Filtering, bypass circuits Coupling and timing circuits Low source impedance circuits High charging current circuits
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PDF
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375x1
TLW175
125P6A
TLW365*
TLW905
125P6B
TLW146
TLW186â
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015P6B
Abstract: No abstract text available
Text: I Type TLW Wet Tantalum Capacitors M allor Y GENERAL SPECIFICATIONS 175°C Operation Silver C ase Technology M lL -C -3 9006 /09 Designs Operating Temperature: -55°C to +175°C Hermetically Sealed Rugged Construction Voltage Range: 6 to 125 V D C Capacitance Range:
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Insulated66
I25P6F
1284/Indianapolis
46206-1284/P
273-0090/Fax:
015P6B
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X827
Abstract: 125P6A THX227 X-826 030p
Text: I Type THX Wet Tantalum Capacitors M allo r Y C a p a c ito rs Extended Range Tantalum C ase Technology Hermetically S ealed T h e maximum ripple current carrying capability at 4 0 kHz and 85°C is shown in the Standard Rating Table. Maxim um ripple capability at other
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PDF
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100P6A
100P6B
100P6C
100P6F
THX276
060P6A
060P6B
THX227
060P6C
THX277
X827
125P6A
X-826
030p
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Untitled
Abstract: No abstract text available
Text: I Type THX M allorY Wet Tantalum Capacitors GENERAL SPECIFICATIONS C apacitors Extended Range Tantalum C ase Technology Herm etically Sealed Rugged Construction Stable in H ostile Environm ents Wet Tantalum Up to 3 Volts Reverse Capability The m axim um ripple current carrying
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OCR Scan
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PDF
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THX226
075P6A
THX686
075P6B
THX826
THX187
075P6C
THX227
Q75P6F
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