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    McGill Microwave Systems Ltd LMR-100-NM-NM(QTY:3FT)

    LMR 100 CABLE ASSY 3FT NMALE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey LMR-100-NM-NM(QTY:3FT) Ammo Pack 10,000 1
    • 1 $33.98
    • 10 $32.435
    • 100 $30.89
    • 1000 $30.89
    • 10000 $30.89
    		Buy Now

    McGill Microwave Systems Ltd LMR-100-NM-SMRA(QTY:2FT)

    LMR 100 CABLE ASSY 2ft N MALE TO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey LMR-100-NM-SMRA(QTY:2FT) Bulk 10,000 1
    • 1 $34.93
    • 10 $33.338
    • 100 $31.75
    • 1000 $31.75
    • 10000 $31.75
    		Buy Now

    McGill Microwave Systems Ltd LMR-100-NM-SMRA(QTY:5FT)

    LMR 100 CABLE ASSY 5ft N MALE TO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey LMR-100-NM-SMRA(QTY:5FT) Bulk 10,000 1
    • 1 $38.06
    • 10 $36.33
    • 100 $34.6
    • 1000 $34.6
    • 10000 $34.6
    		Buy Now

    McGill Microwave Systems Ltd LMR-100-NM-SMRP(QTY:2FT)

    LMR 100 CABLE 2FT N MALE TO S MA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey LMR-100-NM-SMRP(QTY:2FT) Ammo Pack 10,000 1
    • 1 $33.5
    • 10 $31.973
    • 100 $30.45
    • 1000 $30.45
    • 10000 $30.45
    		Buy Now

    McGill Microwave Systems Ltd LMR-100-NM-SMRA(QTY:1FT)

    LMR 100 CABLE ASSY 1ft N MALE TO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey LMR-100-NM-SMRA(QTY:1FT) Bulk 10,000 1
    • 1 $33.88
    • 10 $32.34
    • 100 $30.8
    • 1000 $30.8
    • 10000 $30.8
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    100NM Datasheets Context Search

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    photodiode

    Abstract: ODD-470W 470nm ir photodiode wavelength
    Text: SELECTIVE WAVELENGTH PHOTODIODE: 470nm PEAK WAVELENGTH ODD-470W FEATURES • • • • Peak response at 470nm Spectral bandwidth 100nm Low dark current No optical filters used RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS TEST CONDITIONS Active Area


    Original     		PDF 470nm ODD-470W 470nm 100nm 380nm 540nm photodiode ODD-470W ir photodiode wavelength

    specifications of scr

    Abstract: scr specifications 100nM SCR-150 S160D motor WITH scr
    Text: Nippon Pulse SCR Stage Notes SCR-050 Notes Note 1: Repeatability +/- 2 counts sub 0.1 um @ Resolutions Note 2: For 10nm resolution, max velocity of encoder is limited to 65mm/sec; for 50nm, the limit is 250mm/sec; and for 100nm 0.1 m , the limit is 500mm/sec.


    Original     		PDF SCR-050 65mm/sec; 250mm/sec; 100nm 500mm/sec. SCR-075 specifications of scr scr specifications 100nM SCR-150 S160D motor WITH scr

    pyroelectric amplifier circuit

    Abstract: LFP-3950L-337 pyroelectric detector
    Text: LFP-3950L-337 pyroelectric detector with tunable FPF Description: Pyroelectric IR detector with integrated ø1.9mm micromachined tunable Fabry-Perot filter. Tuning range 3.9 . 4.8µm, spectral bandwidth 100nm, low spring stiffness, pyroelectric element area 2.0x2.0mm²


    Original     		PDF LFP-3950L-337 100nm, 100Hz 100GOhm LME-337 lfp-3950l pyroelectric amplifier circuit LFP-3950L-337 pyroelectric detector

    ir photodiode wavelength

    Abstract: ODD-470W 470nm NJM4560 pins 380nm 470N-M
    Text: SELECTIVE WAVELENGTH PHOTODIODE: 470nm PEAK WAVELENGTH ODD-470W FEATURES • • • • Peak response at 470nm Spectral bandwidth 100nm Low dark current No optical filters used RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS TEST CONDITIONS Active Area


    Original     		PDF 470nm ODD-470W 470nm 100nm 380nm 540nm ir photodiode wavelength ODD-470W NJM4560 pins 380nm 470N-M

    SAMSUNG MEMORY 2006

    Abstract: K1B2816B2A 128MB ADIE
    Text: UtRAM 128Mb M-die 100nm & A-die(90nm) Comparison Aug. 2006 Product Planning & Application Engineering Team MEMORY DIVISION SAMSUNG ELECTRONICS Co., LTD Product Product Planning Planning & & Application Application Eng. Eng. Team Team The Leader in Memory Technology


    Original     		PDF 128Mb 100nm) K1B2816B2A K1B2816B6M 104Mhz 66Mhz 128Mb SAMSUNG MEMORY 2006 K1B2816B2A ADIE

    mcz 300 1bd

    Abstract: SIT Static Induction Transistor HgCdTe philips igbt induction cooker UJT pin identification thyristor BT 161 Photo DIAC rct Thyristor dg23 transistor smd power IGBT MOSFET GTO SCR diode
    Text: 개정 신판 도해 반도체 가이드 개정신판 도해 반도체 가이드 개정 신판 도해 반도체 가이드 개정 신판 도해 반도체 가이드 발간에 즈음하여 Color and Visual Guide: Semiconductors Published by TOSHIBA CORPORATION


    Original     		PDF 128bit Division/e-Busin125 mcz 300 1bd SIT Static Induction Transistor HgCdTe philips igbt induction cooker UJT pin identification thyristor BT 161 Photo DIAC rct Thyristor dg23 transistor smd power IGBT MOSFET GTO SCR diode

    ISO-105-B02

    Abstract: No abstract text available
    Text: 有关本公司产品的注意事项 请务必在使用本公司产品目录之前阅读。 注意事项 • 本软件中记载的内容是2009年10月现在的内容。本产品目录记载的内容由于产品的改良等原因发生变更时，恕不另行


    Original     		PDF 1/16x-SPEED 123mm 199mm media0102 ISO-105-B02 ISO-105-B02

    IC SEM 2004

    Abstract: ED-4701-304 AB-6201 failure rate TDDB JIS-C-7032 ED-4701-102 ED-4701-303 EIAJ AB-6201 Z81151981 HGSM
    Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株


    Original     		PDF GL-23 IC SEM 2004 ED-4701-304 AB-6201 failure rate TDDB JIS-C-7032 ED-4701-102 ED-4701-303 EIAJ AB-6201 Z81151981 HGSM

    TESA 4965

    Abstract: agilent optical encoder 90-electrical-degree AM26LS32 EN61000-4-2 EN61000-4-3 EN61000-4-4 EN61000-4-6 EN61000-6-2 RS422A
    Text: Agilent AEDL Series Optical Linear Incremental Encoder Features Description The AEDL Series linear encoders use high technology transmissive optical encoding technique to detect linear motion. There is no mechanical contact between the scanning head and the linear scale, thus


    Original     		PDF 15-pin 12-pin 5989-2553EN TESA 4965 agilent optical encoder 90-electrical-degree AM26LS32 EN61000-4-2 EN61000-4-3 EN61000-4-4 EN61000-4-6 EN61000-6-2 RS422A

    nir emitter leds with 700 to 900 nm

    Abstract: ODD-660W ansi z136.1 -vcsel photodiode 650nm nep UV led diode 200 nm peak 1W OD-850-30-030 OD-800W ODD-42WB "infrared led" 800 nm 980 nm led nir
    Text: Optoelectronics Data Book Innovators in Optoelectronics TABLE OF CONTENTS Alphanumeric Eye Safety


    Original     		PDF 660nm ODD-660W nir emitter leds with 700 to 900 nm ODD-660W ansi z136.1 -vcsel photodiode 650nm nep UV led diode 200 nm peak 1W OD-850-30-030 OD-800W ODD-42WB "infrared led" 800 nm 980 nm led nir

    dv4 mosfets

    Abstract: C12 IC GATE CA3240E DEPLETION MOSFET Harris Semiconductor jfet mos die mosfet cross reference n channel depletion MOSFET 2N4036 AN7254
    Text: Harris Semiconductor No. AN7254.2 Harris Power MOSFETs April 1994 Switching Waveforms Of The L2FET: A 5 Volt Gate-Drive Power MOSFET Author: C. Frank Wheatley, Jr. and Harold R. Ronan, Jr. gate sensitivity, as shown in Figures 1, 2, and 3, which are comparisons of the industry standard RFM10N15 with its


    Original     		PDF AN7254 RFM10N15 RFM10N15L. dv4 mosfets C12 IC GATE CA3240E DEPLETION MOSFET Harris Semiconductor jfet mos die mosfet cross reference n channel depletion MOSFET 2N4036

    batch failure test data

    Abstract: Ta2O5 MIL-PRF-55365 P1204
    Text: A Study of Field Crystallization in Tantalum Capacitors and its effect on DCL and Reliability T.Zednicek AVX Czech Republic, s.r.o., Dvorakova 328, 563 01 Lanskroun, Czech Republic Phone: +420 465 358 126 Fax: +420 465 358 128 Mail: tomas.zednicek@eur.avx.com


    Original     		PDF 207-282-5111Fx batch failure test data Ta2O5 MIL-PRF-55365 P1204

    hamamatsu photomultiplier R300

    Abstract: 931A Hamamatsu Hamamatsu r300 6199 photomultiplier R300 pmt hamamatsu pmt R300 RCA 931-A Photomultiplier Tube Hamamatsu photomultiplier RCA 931A photomultiplier R928, hamamatsu
    Text: CHAPTER 1 INTRODUCTION 2007 HAMAMATSU PHOTONICS K. K. 2 1.1 CHAPTER 1 INTRODUCTION Overview of This Manual The following provides a brief description of each chapter in this technical manual. Chapter 1 Introduction Before starting to describe the main subjects, this chapter explains basic photometric units used to measure


    Original     		PDF

    multilayer lithography ic fabrication

    Abstract: Jewell Instruments
    Text: EUV Lithography—The Successor to Optical Lithography? John E. Bjorkholm Advanced Lithography Department, Technology and Manufacturing Group, Santa Clara, CA. Intel Corporation Index words: EUV lithography, lithography, microlithography Abstract This paper discusses the basic concepts and current state


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 2009 年 6 月 30 日 实现顶级耐光性能 将对应蓝光波长区段的 GL 系列波长板商品化 爱普生拓优科梦（Epson Toyocom）公司（总经理：宮澤 要）将具备了能够同时对 应高功率及高光密度蓝光波长区段的耐光性用于光学拾波器光学系统的高性能 GL 系列


    Original     		PDF 100nm

    SBC102

    Abstract: photodiode sharp sbc T4151 SBC541 SBC111 SBC255 A350L 500EX SBC11
    Text: S HARP ELEK/ MELEC DIV 1SE D | fllflG?Ta GQ0E70Û ü l Blue Sensitive Photodiodes • 1. 2. 3. SBC Series ■ F ea tu res Suitable for visible light measurement A wide range of sensitivity wavelength A : 350~l,100nm Wide acceptance A pp licatio n s 1. Illuminance meters


    OCR Scan     		PDF 100nm) 44mm2 SBC111 314mm2 SBC255 ActiC255) SBC541) 500ex SBC255) SBC102 photodiode sharp sbc T4151 SBC541 SBC111 SBC255 A350L 500EX SBC11

    SBC102

    Abstract: SBC541 SBC111
    Text: SHARP ELEK/ MELEC DIV 1SE D | fllflG?Ta GQ0E70Û ü l Blue Sensitive Photodiodes • 1. 2. 3. SBC Series ■ Features Suitable for visible light measurement A wide range of sensitivity wavelength A : 350~l,100nm W ide acceptance 1. 2. 3. 134 SHARP A pplications


    OCR Scan     		PDF GQ0E70Û 100nm SBC102 SBC111 SBC255 SBC541 9X40V) SBC255) SBC102 SBC111

    Untitled

    Abstract: No abstract text available
    Text: MS-15 INFRA-RED PHOTOCELL This silicon photocell has been specifically developed for the detection of Infra-red radiation in the wavelength range of 7 5 0 to 1 100nm . Originally used in conjunction with a Helium Neon laser for the simulation of gun-fire in a training target system, the M S 1 5 can be used in a wide range of more


    OCR Scan     		PDF MS-15 100nm 750nm

    mmic p07

    Abstract: hp mmic p07
    Text: MICROWAVE GaAs STANDARD FOUNDRY SERVICE 1 - STANDARD FOUNDRY SERVICE 1.1. BASIC FOUNDRY SERVICE T he standard approa ch en ables a single cu sto ­ m er to im ple m en t one or several chip designs o r d e s ig n v a r ia tio n s on a s a m e re tic le an d


    OCR Scan     		PDF ldss/100 ldss/100 mmic p07 hp mmic p07

    1D225

    Abstract: 200 Amp bridge mosfet ptc resistor 300 to 500 e OMS420 OMS420A OMS520 OMS620 L15A diode t25 4 HO
    Text: OMS420 OMS52Q OMS620 3 PHASE, LOW VOLTAGE, LOW R Ds<on , MOSFET BRIDGE CIRCUIT IN A PLASTIC PACKAGE Three Phase, 200 Volt, 15 To 45 Amp Bridge With Current And Temperature Sensing In A Low Profile Package FEATURES • • • • • • Three Phase Power Switch Configuration


    OCR Scan     		PDF OMS420 OMS620 OMS520 100nm 0DG1D47 1D225 200 Amp bridge mosfet ptc resistor 300 to 500 e OMS420A OMS520 L15A diode t25 4 HO

    ST E3 0560

    Abstract: J 292 ftm 230 CS8125 CS8127 CS8127-IP1 625 660 TG t1537
    Text: CRYSTAL SEMICONDUCTOR 3âE: D ES 2S4L.3E4 •^ r o a a a m jL iT r x ,o \ m E z r a ma r a a œ a a& E ^? 00040=14 S E3CYS CS8127 Semiconductor Corporation Light Emitting /Detecting Diode iu3~7 Features General Description • Supports bi-direction communication


    OCR Scan     		PDF CS8127 CS8123 CS8124 CS8125 CS8127 applicat400 62BSC 300BSG x45deg 45degkâ ST E3 0560 J 292 ftm 230 CS8127-IP1 625 660 TG t1537

    UT-34-SP

    Abstract: Gigabit Logic 5sh3
    Text: TE K T R O N I X INC/ TRI âU I N T SbE » B fl'JOfc.aifl G Q Q Q S R R S H T R Ö 'T'-S Z-ivo 7 Im E iL i G ig a B it L o g ic 16G076 LED Driver 1 G b it/s N R Z D a ta R a te FEATURES >1-150 mA output current • DC-blocked ECL, GaAs PicoLogic compatible


    OCR Scan     		PDF 16G076 16G076 050P3 0080TOP UT-34-SP Gigabit Logic 5sh3

    Untitled

    Abstract: No abstract text available
    Text: f f ï H A R R HCTS 10MS I S S E M I C O N D U C T O R Radiation Hardened Triple 3-Input NAND Gate September 1995 Pinouts Features • 3 Micron Radiation Hardened SOS CMOS 14 LEAD CERAM IC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP M IL-STD-1835 CDIP2-T14, LEAD FINISH C


    OCR Scan     		PDF IL-STD-1835 CDIP2-T14, 00b25fl7 HCTS10MS 05A/cm2 100nm

    Untitled

    Abstract: No abstract text available
    Text: EPSON PF836-01 SEDI 670 Dot Matrix High Duty LCD Driver • 100 Output • 1/64 to 1/300 in display duty • CMOS High Voltage Resistant Process • OVERVIEW The SED1670 is a 100 output low-power resistance common row driver which is suitable for driving a very high


    OCR Scan     		PDF PF836-01 SED1670 SED1640D SED1606D SED1631* SED1635*