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    100N5 Search Results

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    100N5 Price and Stock

    TTM Technologies C100N50Z4A

    RF ATTENUATOR 50OHM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey C100N50Z4A Reel 1,000 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $3.02596
    • 10000 $2.87466
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    C100N50Z4A Digi-Reel 1
    • 1 $6.05
    • 10 $5.404
    • 100 $4.4309
    • 1000 $3.58792
    • 10000 $3.58792
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    C100N50Z4A Cut Tape 1
    • 1 $6.05
    • 10 $5.404
    • 100 $4.4309
    • 1000 $3.58792
    • 10000 $3.58792
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    Richardson RFPD C100N50Z4A 279 1
    • 1 $1.44
    • 10 $1.44
    • 100 $1.44
    • 1000 $1.44
    • 10000 $1.44
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    C100N50Z4A 1,000
    • 1 -
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    • 1000 $2.81
    • 10000 $2.81
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    TTM Technologies K100N50X4B

    RF ATTENUATOR 50OHM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey K100N50X4B Tray 950 1
    • 1 $7.34
    • 10 $6.733
    • 100 $5.5085
    • 1000 $4.1314
    • 10000 $4.1314
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    Richardson RFPD K100N50X4B 770 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $3.98
    • 10000 $3.98
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    TTM Technologies A100N50X4A

    RF ATTENUATOR 50OHM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey A100N50X4A Bag 894 1
    • 1 $4.26
    • 10 $3.247
    • 100 $2.5697
    • 1000 $2.13394
    • 10000 $1.9291
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    Richardson RFPD A100N50X4A 1
    • 1 $3.64
    • 10 $3.64
    • 100 $3.27
    • 1000 $1.96
    • 10000 $1.96
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    TTM Technologies C100N50Z4B

    SMD TERM 100W 50 OHM 5GHZ 2020
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey C100N50Z4B Reel 720 800
    • 1 -
    • 10 -
    • 100 -
    • 1000 $6.19509
    • 10000 $5.94649
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    C100N50Z4B Cut Tape 43 1
    • 1 $11.48
    • 10 $8.885
    • 100 $7.1895
    • 1000 $6.69984
    • 10000 $6.69984
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    C100N50Z4B Digi-Reel 1
    • 1 $11.48
    • 10 $8.885
    • 100 $7.1895
    • 1000 $6.69984
    • 10000 $6.69984
    		Buy Now
    Richardson RFPD C100N50Z4B 17,600 800
    • 1 -
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    • 100 -
    • 1000 $3.01
    • 10000 $3.01
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    C100N50Z4B 84 1
    • 1 $9.77
    • 10 $9.77
    • 100 $8.75
    • 1000 $5.6
    • 10000 $5.6
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    onsemi FDL100N50F

    MOSFET N-CH 500V 100A TO264-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FDL100N50F Tube 386 1
    • 1 $18.77
    • 10 $13.407
    • 100 $10.7362
    • 1000 $10.7362
    • 10000 $10.7362
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    Avnet Americas FDL100N50F Tube 9 Weeks 375
    • 1 -
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    • 100 -
    • 1000 $9.98033
    • 10000 $9.98033
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    Mouser Electronics FDL100N50F 2,235
    • 1 $18.68
    • 10 $13.41
    • 100 $12.27
    • 1000 $12.27
    • 10000 $12.27
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    Newark FDL100N50F Bulk 557 1
    • 1 $18.95
    • 10 $17.14
    • 100 $14.44
    • 1000 $13.08
    • 10000 $13.08
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    TME FDL100N50F 1
    • 1 $17.73
    • 10 $17.73
    • 100 $14.19
    • 1000 $14.19
    • 10000 $14.19
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    Richardson RFPD FDL100N50F 375
    • 1 -
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    • 1000 $10.74
    • 10000 $10.74
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    Avnet Asia FDL100N50F 9 Weeks 375
    • 1 -
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    • 100 -
    • 1000 $11.452
    • 10000 $10.34819
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    Avnet Silica FDL100N50F 10 Weeks 25
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    Chip1Stop FDL100N50F 100
    • 1 $18.393
    • 10 $13.336
    • 100 $10.7
    • 1000 $10.7
    • 10000 $10.7
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    EBV Elektronik FDL100N50F 11 Weeks 25
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    Find more 100N5 price and stock on Findchips.com

    100N5 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    100N50TW Anaren RF/IF and RFID - Attenuators - RF ATTENUATOR 50OHM Original PDF

    100N5 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Model 100N50TW Flanged Termination 100 Watts, 50Ω General Specifications Resistive Element Substrate Cover Mounting Flange Lead s : Features: • DC – 5.0 GHz • 100 Watts • AlN Ceramic • Non-Nichrome Resistive Element • Low VSWR Thick film Aluminum Nitride ceramic


    Original     		PDF 100N50TW QQ-N-290 MIL-E-5400.

    100N50P

    Abstract: mosfet IXFB 100n50p IXFB100N50P 100N50 NS1250
    Text: PolarHVTM HiPerFET Power MOSFET IXFB 100N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25° C to 150° C 500 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 500 V VGSS Continuous ±30


    Original     		PDF 100N50P 100N50P mosfet IXFB 100n50p IXFB100N50P 100N50 NS1250

    Untitled

    Abstract: No abstract text available
    Text: Model RFP-100N50TW RoHS Compliant Flanged Resistors 100 Watts, 50Ω General Specifications Resistive Element Substrate Cover Mounting flange Leads Features: • DC – 5.0 GHz • 100 Watts • Aluminum Nitride Ceramic • Non-Nichrome Resistive Element • Welded Silver Leads


    Original     		PDF RFP-100N50TW QQ-N-290 MIL-E-5400. 100N50TW

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET IXFB 100N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 500 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 500 V VGSS


    Original     		PDF 100N50P PLUS264TM

    100N50P

    Abstract: 100n50 S20NF
    Text: IXFL 100N50P PolarHVTM HiPerFET Power MOSFET ISOPLUS264TM VDSS ID25 = 500 V = 70 A Ω RDS on ≤ 52 mΩ ≤ 200 ns trr (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25° C to 150° C


    Original     		PDF 100N50P ISOPLUS264TM ISOPLUS264 100N50P 100n50 S20NF

    RFP-100N50TW

    Abstract: No abstract text available
    Text: RFP-100N50TW Aluminum Nitride Termination VER3/14/01 Description: RFP-100N50TW Features: o 1kHz – 5.0 GHz o 100 Watts o Aluminum Nitride AlN ceramic o Welded Silver leads o Non-Nicrome resistive element o Low VSWR o 100% Tested The RFP-100N50TW is a general purpose 100 Watt


    Original     		PDF RFP-100N50TW VER3/14/01 RFP-100N50TW 700oF)

    IXFN 100N50P

    Abstract: 100N50P IXFN100N50P sot 227b diode fast 100n50 90A49 S20NF
    Text: PolarHVTM HiPerFET Power MOSFET IXFN 100N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25° C to 150° C 500 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 500 V VGSS Continuous ±30


    Original     		PDF 100N50P IXFN 100N50P 100N50P IXFN100N50P sot 227b diode fast 100n50 90A49 S20NF

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET IXFN 100N50P VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 500 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ


    Original     		PDF 100N50P

    100N50P

    Abstract: 100n50
    Text: IXFL 100N50P PolarHVTM HiPerFET Power MOSFET ISOPLUS264TM VDSS ID25 = 500 V = 70 A Ω RDS on ≤ 52 mΩ ≤ 200 ns trr (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings


    Original     		PDF 100N50P ISOPLUS264TM 100N50P 100n50

    100N50

    Abstract: RFP-100N50TW RFP100N50 SN63
    Text: 100 Watts, 50 Ω General Specifications Resistive Element: Substrate: Cover: Mounting Flange: Thick film Aluminum nitride ceramic Alumina ceramic Copper, nickel plated per QQ-N-290 99.99% pure silver .005” thk Lead(s): Features • DC – 5.0 GHz Electrical Specifications


    Original     		PDF QQ-N-290 RFP-100N50TW 100N50 RFP-100N50TW RFP100N50 SN63

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    MB81C68

    Abstract: TMS27256 nmc27c640 free transistor equivalent book 2sc Zeropower ram MK48Z ET27160 200 watt Regulated dc Power Supply Schematic Diag itt capacitor ady10 m2764a-2fl
    Text: MEMORY PRODUCTS DATABOOK 1st EDITION JUNE 1988 USE IN LIFE SUPPORT MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON' PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEM WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF SGS-THOMSON


    Original     		PDF Z8000 MB81C68 TMS27256 nmc27c640 free transistor equivalent book 2sc Zeropower ram MK48Z ET27160 200 watt Regulated dc Power Supply Schematic Diag itt capacitor ady10 m2764a-2fl

    3 phase inverter 120 conduction mode waveform

    Abstract: inverter irf840 trf530 IRFP450 inverter sin wave inverter circuit diagram irfp460 inverter Three phase inverter using irfp450 mosfet Diagram irf840 pwm ac sine inverter h bridge irf840 inverter irfp460 mosfet pwm inverter
    Text: Using HEXFET III in PWM Inverters for Motor Drives and UPS Systems HEXFET is a registered trademark of International Rectifier by D. Grant The PWM Inverter Introduction The advantages o f MOSFETs for high frequency pulse-width modulated (PWM) inverters and choppers for variable speed


    OCR Scan     		PDF AN-967A 3 phase inverter 120 conduction mode waveform inverter irf840 trf530 IRFP450 inverter sin wave inverter circuit diagram irfp460 inverter Three phase inverter using irfp450 mosfet Diagram irf840 pwm ac sine inverter h bridge irf840 inverter irfp460 mosfet pwm inverter