2SC982
Abstract: TO226AA 92PU45 MPSU45 MPS-U45 2S0114 2S01140 2SC3132 b0477
Text: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO Ie Max PD Max (V) (A) (W) hFE Min Max fT leBO Max tr Max tf Max TOper Max (Hz) (A) (8) (8) ee) 125M 75M 75M 75M 75M 75M 200M 200M 100M 125M 100n 500n 20u 500n 500n 500n 100n 100n 100n 100n
|
Original
|
PDF
|
MPSA14
040C1
040C2
040C3
BC517
BC517S
NS0151
MPSW13
2SC982
TO226AA
92PU45
MPSU45
MPS-U45
2S0114
2S01140
2SC3132
b0477
|
bvc49
Abstract: TIPP110 FMMT388 U2TA506 BSR51 SE1001 2N2724 2S0152 transistor* SE1001
Text: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO Ic Max PD Max (V) (A) (W) hFE Min Max fT ICBO Max (Hz) (A) 120M 0.1u 100n 100m 100n 10u tr Max (8) tf Max Toper Max (8) (Oe) 400n 150 150 150 150 150 Package Style NPN Darlington Transistors, (Cont'd)
|
Original
|
PDF
|
2S01111
2S01198A
2S0946A
MPS6725
2SC3985
2S01661M
2S01521
92PU45A
2N6725
bvc49
TIPP110
FMMT388
U2TA506
BSR51
SE1001
2N2724
2S0152
transistor* SE1001
|
ADG200-series
Abstract: ADG200CJ MIL-STO-883
Text: 01CMOS ProtectedDualSPSTAnalogSwitch ADG200 ANALOG W DEVICES FEATURES latch.Proof DI CMOS Overvoltage.Proof: VSUPPL Y :!:25V Superior DG-200 Replacement Break-Before-MakeSwitching Action RON: 100n max over Full Temperature Range Direct TTl/CMOS Interface OBS
|
Original
|
PDF
|
DG-200
01CMOS
ADG200
ADG200Cj
ADG200BP
ADG200BA
ADG200AP
ADG200
O-100
102mml.
ADG200-series
MIL-STO-883
|
Untitled
Abstract: No abstract text available
Text: CSC1187Y Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)30 I(C) Max. (A) Absolute Max. Power Diss. (W) Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)20
|
Original
|
PDF
|
CSC1187Y
Freq400M
|
Untitled
Abstract: No abstract text available
Text: TPS63A Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)12 V(BR)CBO (V)30 I(C) Max. (A) Absolute Max. Power Diss. (W)500m Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)
|
Original
|
PDF
|
TPS63A
Freq500M
|
Untitled
Abstract: No abstract text available
Text: TPS62A Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)12 V(BR)CBO (V)30 I(C) Max. (A) Absolute Max. Power Diss. (W)500m Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)
|
Original
|
PDF
|
TPS62A
Freq500M
|
Untitled
Abstract: No abstract text available
Text: SST1139 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)30 I(C) Max. (A)30m Absolute Max. Power Diss. (W) Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)25
|
Original
|
PDF
|
SST1139
Freq850M
|
Untitled
Abstract: No abstract text available
Text: 2SC3954 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)120 V(BR)CBO (V)120 I(C) Max. (A)300m Absolute Max. Power Diss. (W)8.0 Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)
|
Original
|
PDF
|
2SC3954
Freq400M
|
Untitled
Abstract: No abstract text available
Text: ESM121RS Transistors Half Bridge MOSFET Power Module Circuits Per Package1 V BR DSS (V)400 V(BR)GSS (V) I(D) Max. (A)13 Absolute Max. Power Diss. (W)500 Maximum Operating Temp (øC)125õ Thermal Resistance Junc-Case I(DSS) Min. (A)1.0m I(GSS) Max. (A)100n
|
Original
|
PDF
|
ESM121RS
|
Untitled
Abstract: No abstract text available
Text: BSM181F Transistors Independent MOSFET Power Module Circuits Per Package1 V BR DSS (V)800 V(BR)GSS (V)20 I(D) Max. (A)34 Absolute Max. Power Diss. (W)700 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case I(DSS) Min. (A)250u I(GSS) Max. (A)100n
|
Original
|
PDF
|
BSM181F
Code4-122
NumberTR00400122
|
SME120N20
Abstract: No abstract text available
Text: SME120N20 Transistors Independent MOSFET Power Module Circuits Per Package1 V BR DSS (V)200 V(BR)GSS (V)40 I(D) Max. (A)120 Absolute Max. Power Diss. (W)350 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case I(DSS) Min. (A)1.0m I(GSS) Max. (A)100n
|
Original
|
PDF
|
SME120N20
time50nÃ
|
Untitled
Abstract: No abstract text available
Text: BF547 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)30 I(C) Max. (A) Absolute Max. Power Diss. (W)300m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)10
|
Original
|
PDF
|
BF547
Freq800M
|
Untitled
Abstract: No abstract text available
Text: SKM151 Transistors Independent MOSFET Power Module Circuits Per Package1 V BR DSS (V)500 V(BR)GSS (V)20 I(D) Max. (A)48 Absolute Max. Power Diss. (W)625 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case.20 I(DSS) Min. (A)250u I(GSS) Max. (A)100n
|
Original
|
PDF
|
SKM151
time25nÃ
Code4-19
NumberTR00400019
|
Untitled
Abstract: No abstract text available
Text: KSC2786 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)30 I(C) Max. (A)20m Absolute Max. Power Diss. (W)250m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)
|
Original
|
PDF
|
KSC2786
Freq400M
|
|
|
Untitled
Abstract: No abstract text available
Text: ESM041R Transistors Half Bridge MOSFET Power Module Circuits Per Package1 V BR DSS (V)400 V(BR)GSS (V) I(D) Max. (A)8.0 Absolute Max. Power Diss. (W)500 Maximum Operating Temp (øC)125õ Thermal Resistance Junc-Case I(DSS) Min. (A)1.0m I(GSS) Max. (A)100n
|
Original
|
PDF
|
ESM041R
|
Untitled
Abstract: No abstract text available
Text: BSM121 Transistors Independent MOSFET Power Module Circuits Per Package1 V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)130 Absolute Max. Power Diss. (W)700 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case I(DSS) Min. (A)250u I(GSS) Max. (A)100n
|
Original
|
PDF
|
BSM121
Code4-122
NumberTR00400122
|
Untitled
Abstract: No abstract text available
Text: 2N3953 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)15 I(C) Max. (A)30m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)200þ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)10
|
Original
|
PDF
|
2N3953
|
Untitled
Abstract: No abstract text available
Text: 2SC2845 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)12 V(BR)CBO (V)25 I(C) Max. (A)70m Absolute Max. Power Diss. (W)250m Minimum Operating Temp (øC) Maximum Operating Temp (øC)125õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)
|
Original
|
PDF
|
2SC2845
|
Untitled
Abstract: No abstract text available
Text: BC817-16W Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)45 V(BR)CBO (V) I(C) Max. (A) Absolute Max. Power Diss. (W) Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)20
|
Original
|
PDF
|
BC817-16W
Freq100M
|
Untitled
Abstract: No abstract text available
Text: STH17 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)20 I(C) Max. (A)20m Absolute Max. Power Diss. (W)500m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)
|
Original
|
PDF
|
STH17
Freq800M
|
Untitled
Abstract: No abstract text available
Text: ESM042R Transistors Full Bridge MOSFET Power Module Circuits Per Package1 V BR DSS (V)400 V(BR)GSS (V) I(D) Max. (A)8.0 Absolute Max. Power Diss. (W)500 Maximum Operating Temp (øC)125õ Thermal Resistance Junc-Case I(DSS) Min. (A)1.0m I(GSS) Max. (A)100n
|
Original
|
PDF
|
ESM042R
|
Untitled
Abstract: No abstract text available
Text: BSM151 Transistors Independent MOSFET Power Module Circuits Per Package1 V BR DSS (V)500 V(BR)GSS (V)20 I(D) Max. (A)48 Absolute Max. Power Diss. (W)625 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case I(DSS) Min. (A)250u I(GSS) Max. (A)100n
|
Original
|
PDF
|
BSM151
Code4-122
NumberTR00400122
|
Untitled
Abstract: No abstract text available
Text: ESM102RS Transistors Full Bridge MOSFET Power Module Circuits Per Package1 V BR DSS (V)500 V(BR)GSS (V) I(D) Max. (A)12 Absolute Max. Power Diss. (W)500 Maximum Operating Temp (øC)125õ Thermal Resistance Junc-Case I(DSS) Min. (A)1.0m I(GSS) Max. (A)100n
|
Original
|
PDF
|
ESM102RS
|
transistor 2n3054
Abstract: 2N3054
Text: GAE GREAT AMERICAN ELECTROINCS 2N3054 Silicon NPN medium power transistor 2N3054 is intended for general switching and amplifier applications. Package Type: TO-66 ABSOLUTE IVAXIMUM RATINGS TCASE = 25°C SYMBOL PARAMETERS Collector-Emitter Voltage REB=100n
|
OCR Scan
|
PDF
|
2N3054
2N3054
100mAdc,
30Vdc,
90Vdc,
500mAdc,
50mAdc
200mAdc,
transistor 2n3054
|
