Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    100M200M500M Search Results

    100M200M500M Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    102k1k

    Abstract: 20M diode zener LDTDG12GPLT1G
    Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTDG12GPLT1G zApplications Driver 3 zFeatures 1 High hFE. 300 Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA)


    Original
    LDTDG12GPLT1G 500mA OT-23 102k1k 20M diode zener LDTDG12GPLT1G PDF

    Diode marking CODE 5M

    Abstract: transistor collector diode protection RADIO FREQUENCY transistor marking CODE LDTDG12GPWT1G LDTDG12GPWT3G diode 50M marking code
    Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTDG12GPWT1G zApplications Driver 3 zFeatures 1 High hFE. 300 Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA)


    Original
    LDTDG12GPWT1G 500mA Diode marking CODE 5M transistor collector diode protection RADIO FREQUENCY transistor marking CODE LDTDG12GPWT1G LDTDG12GPWT3G diode 50M marking code PDF

    Diode marking CODE 5M

    Abstract: diode 50M marking code LDTBG12GPWT1G transistor collector diode protection RADIO FREQUENCY transistor marking CODE
    Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTBG12GPWT1G zApplications Driver 3 zFeatures 1 High hFE. 300 Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA)


    Original
    LDTBG12GPWT1G 500mA Diode marking CODE 5M diode 50M marking code LDTBG12GPWT1G transistor collector diode protection RADIO FREQUENCY transistor marking CODE PDF

    20M diode zener

    Abstract: 102k1k DTDG14GP T100
    Text: DTDG14GP Transistors Digital transistor built in resistor and zener diode Driver (60V, 1A) DTDG14GP !External dimensions (Units : mm) 0.5±0.1 4.5+0.2 −0.1 1.5 +0.2 −0.1 4.0±0.3 2.5+0.2 −0.1 1.6±0.1 (1) 1.0±0.2 !Features 1) High hFE. (typ. hFE =750 VCE/IC=2V/0.5A)


    Original
    DTDG14GP 500mA/5mA) SC-62 100m200m500m 20M diode zener 102k1k DTDG14GP T100 PDF

    Untitled

    Abstract: No abstract text available
    Text: DTDG14GP Transistors Digital transistor built in resistor and zener diode Driver (60V, 1A) DTDG14GP !External dimensions (Units : mm) 0.5±0.1 4.5+0.2 −0.1 1.5 +0.2 −0.1 4.0±0.3 2.5+0.2 −0.1 1.6±0.1 (1) 1.0±0.2 !Features 1) High hFE. (typ. hFE =750 VCE/IC=2V/0.5A)


    Original
    DTDG14GP 500mA/5mA) SC-62 PDF

    LDTBG12GPLT1G

    Abstract: 102k1k marking 20M resistor 20M diode zener
    Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTBG12GPLT1G zApplications Driver 3 zFeatures 1 High hFE. 300 Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA)


    Original
    LDTBG12GPLT1G 500mA OT-23 LDTBG12GPLT1G 102k1k marking 20M resistor 20M diode zener PDF

    20M diode zener

    Abstract: 102k1k LDTDG12GPT1G SC-89 transistor collector diode protection
    Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTDG12GPT1G zApplications Driver 3 zFeatures 1 High hFE. 300 Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA)


    Original
    LDTDG12GPT1G 500mA SC-89 463C-01 463C-02. 20M diode zener 102k1k LDTDG12GPT1G SC-89 transistor collector diode protection PDF

    DTDG14GP

    Abstract: T100 sc-62 zener
    Text: DTDG14GP Transistors 1A / 60V Digital Transistor with built-in resistor and zener diode DTDG14GP zExternal dimensions (Unit : mm) zApplications Driver 1.5 2.5 4.0 zFeatures 1) High hFE. 300 (Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA)


    Original
    DTDG14GP 500mA SC-62 DTDG14GP T100 sc-62 zener PDF

    102k1k

    Abstract: LDTBG12GPT1G SC-89
    Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTBG12GPT1G zApplications Driver 3 zFeatures 1 High hFE. 300 Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA)


    Original
    LDTBG12GPT1G 500mA OT-23 SC-89 463C-01 463C-02. 102k1k LDTBG12GPT1G SC-89 PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors Digital transistor built-in resistors Driver (60V,1A) DTDG14GP •F e a tu re s 1) •E xte rn a l dimensions (Units: mm) H ig h h F E . = 750 (Typ.) ( V c e / I c = 2V/0.5A) Low VcE(sat). ( I c / I b = 500mA/5mA) 3) B uilt-in zener dio d e fo r strong


    OCR Scan
    DTDG14GP 500mA/5mA) SC-62 100m200m500m I00m200m PDF