Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    100KHZ 5V TRANSISTOR NPN Search Results

    100KHZ 5V TRANSISTOR NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation

    100KHZ 5V TRANSISTOR NPN Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2n3904 transistor

    Abstract: 2N3904, transistor 2N3904 equivalent 2N3904 SOT-23 2N3904 transistor data sheet free download 2N3904 2N3906 MMBT3904LT1 2n3906 PNP transistor DC current gain 2n3904 TRANSISTOR PNP
    Text: TO-92 Plastic-Encapsulate Transistors 2N3904 TRANSISTOR（ NPN ） TO—92 FEATURE •NPN silicon epitaxial planar transistor for switching and Amplifier applications ·As complementary type, the PNP transistor 2N3906 is Recommended ·This transistor is also available in the SOT-23 case with


    Original     		2N3904 O--92 2N3906 OT-23 MMBT3904LT1 100KHz 100MHz 2n3904 transistor 2N3904, transistor 2N3904 equivalent 2N3904 SOT-23 2N3904 transistor data sheet free download 2N3904 MMBT3904LT1 2n3906 PNP transistor DC current gain 2n3904 TRANSISTOR PNP PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N3904 TRANSISTOR（ NPN ） TO—92 FEATURE •NPN silicon epitaxial planar transistor for switching and Amplifier applications ·As complementary type, the PNP transistor 2N3906 is


    Original     		2N3904 2N3906 OT-23 MMBT3904LT1 100KHz 100MHz PDF

    100khz 5v transistor npn

    Abstract: No abstract text available
    Text: KST4123 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Character! ctic T a = 2 5 “C Sym bol Collector-Base Voltage Coltector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage T emperature


    OCR Scan     		KST4123 OT-23 100MHz 100KHz 100khz 5v transistor npn PDF

    Untitled

    Abstract: No abstract text available
    Text: M 2N 1893 NPN SILICON PLANAR M IC R O EPITAXIAL TRANSISTOR EL-ECSnrFRQrsllCSS CASE TO-39 2N1893 is an NPN silicon planar epitaxial transistor designed for audio amplifier output stage and medium power industrial applications. ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage


    OCR Scan     		2N1893 500mA 800mW 100jiA 100kHz 20MHz 100kHz PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N3904 Plastic-Encapsulate Transistors NPN TO—92 Features •NPN silicon epitaxial planar transistor for switching and Amplifier applications ·As complementary type, the PNP transistor 2N3906 is Recommended ·This transistor is also available in the SOT-23 case with


    Original     		2N3904 2N3906 OT-23 MMBT3904LT1 100KHz 100MHz PDF

    2N2920DCSM

    Abstract: No abstract text available
    Text: 2N2920DCSM DUAL NPN TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches 3 1 4 A 6 5 0.23 rad. (0.009) FEATURES 4.32 ± 0.13 (0.170 ± 0.005) 2 2.54 ± 0.13 (0.10 ± 0.005)


    Original     		2N2920DCSM 2N2920DCSM PDF

    2N915

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company 2N915 NPN SILICON PLANAR TRANSISTOR TO-18 Metal Can Package General Purpose Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage SYMBOL VCEO VALUE 50 UNIT V


    Original     		ISO/TS16949 2N915 C-120 2N915Rev 080903E 2N915 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N2920DCSM DUAL NPN TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches 3 1 4 A 6 5 0.23 rad. (0.009) FEATURES 4.32 ± 0.13 (0.170 ± 0.005) 2 2.54 ± 0.13 (0.10 ± 0.005)


    Original     		2N2920DCSM 2N2920DCSM-JQR" 2N2920DCSM-JQR-B 5/10u 60MHz PDF

    CA3246M

    Abstract: CA3246 CA3246M96 850e 610E CA3227 CA3227E CA3227M CA3227M96 SPICE 2G6
    Text: CA3227, CA3246 Data Sheet High-Frequency NPN Transistor Arrays For Low-Power Applications at Frequencies Up to 1.5GHz September 1998 File Number 1345.4 Features • Gain-Bandwidth Product fT . . . . . . . . . . . . . . . . . >3GHz • Five Transistors on a Common Substrate


    Original     		CA3227, CA3246 CA3227 CA3246 CA3246M CA3246M96 850e 610E CA3227E CA3227M CA3227M96 SPICE 2G6 PDF

    CA3246m

    Abstract: 610E CA3227 CA3227E CA3227M CA3227M96 CA3246 CA3246E CA3246M96 m14 transistor
    Text: CA3227, CA3246 S E M I C O N D U C T O R High-Frequency NPN Transistor Arrays For LowPower Applications at Frequencies Up to 1.5GHz August 1996 Features Description • Gain-Bandwidth Product fT . . . . . . . . . . . . . . . >3GHz The CA3227 and CA3246 consist of five general purpose silicon NPN transistors on a common monolithic substrate.


    Original     		CA3227, CA3246 CA3227 CA3246 CA3227 CA3246m 610E CA3227E CA3227M CA3227M96 CA3246E CA3246M96 m14 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: mi Vrrr= mi S E M E 2N2920DCSM LAB DUAL NPN TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches 1 .4 0 ± 0 .1 5 (0 .0 5 5 ± 0 .0 0 6) 2 .2 9 ± 0.20 (0 .09 ± 0 .008)


    OCR Scan     		2N2920DCSM PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N2920DCSM DUAL NPN TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches 3 2 2.54 ± 0.13 (0.10 ± 0.005) 1.40 ± 0.15 (0.055 ± 0.006) 1.65 ± 0.13 (0.065 ± 0.005)


    Original     		2N2920DCSM PDF

    100khz 5v transistor npn

    Abstract: 1R Transistor 100khz 5v transistor KST5089 KST5088 5089 npn marking 1R NPN transistor code mark NF
    Text: KST5088/5089 NPN EPITAXIAL SILICON TRANSISTOR LOW NOISE TRANSISTOR SOT-23 Î ABSOLUTE MAXIMUM RATINGS TA=25 Characteristic Symbol Cllector-Base Voltage :KST5088 :KST5089 Collector-Emitter Voltage :KST5088 :KST5089 Emitter-Base Voltage Collector Current Collector Dissipation


    Original     		KST5088/5089 OT-23 KST5088 KST5089 100khz 5v transistor npn 1R Transistor 100khz 5v transistor KST5089 KST5088 5089 npn marking 1R NPN transistor code mark NF PDF

    act30bht

    Abstract: 13003 transistor power supply circuits 13003 MOSFET transistor ACT30BHT-A ACT30AHT-A act30aht ACT30 flyback 13003 act30bh act30 application
    Text: Datasheet Rev 2, 5/2005 ACT30 ACT30 HIGH PERFORMANCE OFF-LINE CONTROLLER ActiveSwitcherTM IC Family FEATURES GENERAL DESCRIPTION Lowest Total Cost Solution 0.15W Standby Power Emitter Drive Allows Safe NPN Flyback Use Hiccup Mode Short Circuit Current Mode Operation


    Original     		ACT30 65kHz 100kHz ACT30 man50 act30bht 13003 transistor power supply circuits 13003 MOSFET transistor ACT30BHT-A ACT30AHT-A act30aht flyback 13003 act30bh act30 application PDF

    2N1711

    Abstract: transistor 2n1711 ts 4141 TRANSISTOR
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N1711 TO-39 Metal Can Package General Purpose Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage, RBE < 10Ω Ω


    Original     		2N1711 C-120 2N1711Rev 040406E 2N1711 transistor 2n1711 ts 4141 TRANSISTOR PDF

    act30bht

    Abstract: 13003 transistor power supply circuits ACT30BHT-A 13003 MOSFET transistor ACT30AHT-A 13002 and 13003 power transistor act30b E 13003 TRANSISTOR npn transistors 400V low power to92 flyback 13003
    Text: Datasheet Rev 2, 5/2005 ACT30 ACT30 HIGH PERFORMANCE OFF-LINE CONTROLLER ActiveSwitcherTM IC Family FEATURES GENERAL DESCRIPTION Lowest Total Cost Solution 0.15W Standby Power Emitter Drive Allows Safe NPN Flyback Use Hiccup Mode Short Circuit Current Mode Operation


    Original     		ACT30 65kHz 100kHz ACT30 act30bht 13003 transistor power supply circuits ACT30BHT-A 13003 MOSFET transistor ACT30AHT-A 13002 and 13003 power transistor act30b E 13003 TRANSISTOR npn transistors 400V low power to92 flyback 13003 PDF

    PH1819-4N

    Abstract: 1850 transistor
    Text: PH1819-4N Wireless Bipolar Power Transistor 4W, 1.78-1.90 GHz M/A-COM Products Released - Rev. 07.07 Outline Drawing Features • • • • • • • • NPN silicon microwave power transistor Designed for linear amplifier applications Class AB: -34 dBc typ. 3rd IMD at 4 W PEP


    Original     		PH1819-4N PH1819-4N 1850 transistor PDF

    100khz 5v transistor npn

    Abstract: KST4123
    Text: NPN EPITAXIAL SILICON TRANSISTOR KST4123 GENERAL PURPOSE TRANSISTOR SO T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-Base Voltage C ollector-E m itter Voltage Em itter-Base Voltage C ollector Current C ollector D issipation S torage Tem perature


    OCR Scan     		KST4123 OT-23 100MHz 100KHz 100HA, 300ns, 100khz 5v transistor npn KST4123 PDF

    common emitter amplifier

    Abstract: 2N2920DCSM 2N2920
    Text: 2N2920DCSM DUAL NPN TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches 3 2 2.54 ± 0.13 (0.10 ± 0.005) 1.40 ± 0.15 (0.055 ± 0.006) 1.65 ± 0.13 (0.065 ± 0.005)


    Original     		2N2920DCSM common emitter amplifier 2N2920DCSM 2N2920 PDF

    PH1819-15N

    Abstract: No abstract text available
    Text: PH1819-15N Wireless Bipolar Power Transistor 15W, 1.78-1.90 GHz M/A-COM Products Released - Rev. 07.07 Outline Drawing Features • • • • • • • • NPN silicon microwave power transistor Designed for linear amplifier applications Class AB: -34 dBc typ. 3rd IMD at 15 W PEP


    Original     		PH1819-15N PH1819-15N PDF

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON TRANSISTOR KST4123 GENERAL PURPOSE TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-B ase Voltage C ollector-E m itter Voltage Em itter-Base Voltage C ollecto r C urrent C ollecto r D issipation


    OCR Scan     		KST4123 100KHz 300ns, PDF

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N1711 TO-39 Metal Can Package General Purpose Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage, RBE < 10Ω Ω


    Original     		2N1711 C-120 2N1711Rev 040406E PDF

    NTE190

    Abstract: No abstract text available
    Text: NTE190 Silicon NPN Transistor High Voltage Amplifier Description: The NTE190 is an NPN silicon transistor in a TO202N type case designed for horizontal drive applications, high voltage linear amplifiers, and high voltage transistor regulators. Features: D High Collector–Emitter Breakdown Voltage: V BR CEO = 180V (Min) @ IC = 1mA


    Original     		NTE190 NTE190 O202N 200mA 200mA, 20MHz 100kHz PDF

    chip die npn transistor

    Abstract: quad hf npn transistors
    Text: IGN W D ES E N R T FO ODUC NDED T E PR O MME U C IT E T R BS Data Sheet NOT LE S U A3127 POSSIB CA3127, HF April 2002 High-Frequency NPN Transistor Array For Low-Power Applications at Frequencies Up to 1.5GHz The CA3227 consists of five general purpose silicon NPN


    Original     		A3127 CA3127, CA3227 FN1345 CA3227 PUB95 MO-220 chip die npn transistor quad hf npn transistors PDF