Untitled
Abstract: No abstract text available
Text: fo t Immediate Assistante, Contact Your Local Salespersoa SDM862 SDM863 SDM872 SDM873 B U R R -B R O W . 16 Single Ended/8 Differential Input 12-BIT DATA ACQUISITION SYSTEMS FEATURES • COMPLETE 12-BIT DATA ACQUISITION SYSTEM IN A MINIATURE PACKAGE • INPUT RANGES SELECTABLE FOR
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SDM862
SDM863
SDM872
SDM873
12-BIT
45kHz
67kHz
33kHz
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KYS 30 40 diode
Abstract: 40n60 transistor mos 30N60 2355Z wiom DC IXYS 30N60 of ic 3915 1XYS 30N60T 35N100
Text: MbE 4bôb22b D I X Y S OGQQÔTM T H IX Y CORP □IXYS Data Book NO.91560A October 1991 "S" Series MOSIGBTs High Short Circuit SOA Insulated Gate Bipolar Transistor Features Guaranteed Short Circuit Capability SCSOA Low Input Capacitances Optimized for 60Hz to 30kHz Switching
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30kHz
1560A
4bflb55b
Q000S1S
IXSH20N60
IXSM20N60
KYS 30 40 diode
40n60 transistor
mos 30N60
2355Z
wiom DC
IXYS 30N60
of ic 3915
1XYS
30N60T
35N100
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Untitled
Abstract: No abstract text available
Text: APT60GT60BR ADVANCED POW ER Te c h n o l o g y 600V 116A Thunderbolt IGBT The Thunderbolt IGBT is a new generation ot high voltage power IGBTs. Using Non-Punch ThroughTechnology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed.
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APT60GT60BR
150KHz
100jiH,
MIL-STD-750
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Untitled
Abstract: No abstract text available
Text: tfV W S CA3165 .r ? * 7 ^SSS&SSSr2 May 1999 ca" OÏ Electronic Switching Circuit evtv,a'v Features Description • Switching Initiated by Damping of InternalOscillator • Proximity Sensing of Rotational Motion • Repeatable Timing of Switching States The CA3165 is a single chip electronic switching circuit
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CA3165
CA3165
CA3165E1)
CA3165E)
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MAXL001
Abstract: 51559 toroid inductor MAX655 105c inductor MAX743 MAX4193 MAX630 POWER toroid inductor 5A MAX634
Text: W I> JX I> I/I 100\iH Toroid Inductor _ Features ♦ ♦ ♦ ♦ ♦ ♦ Low Electromagnetic Interference Toroid Construction Low-Cost, Iron-Powder Core 200kHz Operation 1.75A Saturation Current 0.08ft DC Resistance Ordering Information
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100\xH
MAXL001
100jiH
200kHz.
200kHz
MAX643
51559
toroid inductor
MAX655
105c inductor
MAX743
MAX4193
MAX630
POWER toroid inductor 5A
MAX634
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A1s smd TRANSISTOR
Abstract: smd diode JC 9E 1px transistor crystal 11.059MHZ AKR 121 11.059mHz crystal oscillator 1E71 mab8051 mPC 514 smd diode code A1s
Text: NAPC/PHILIPS SEMICOND b3E ] • b b S 3 cJE4 □□0 2 51 1 3GD I SIC3 Philips Semiconductors Microcontroller Products Objective specification Low-voltage single-chip 8-bit microcontroller 83CL411 GENERAL DESCRIPTION FEATURES The83CL411 is manufactured in an
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fl2511
83CL411
83CL411
85CL781
83CL41S
hh53TB4
A1s smd TRANSISTOR
smd diode JC 9E
1px transistor
crystal 11.059MHZ
AKR 121
11.059mHz crystal oscillator
1E71
mab8051
mPC 514
smd diode code A1s
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HG20N60B3
Abstract: hG20N60 hg20n60b3 equivalent HG20N60B G20N60B3 hg*20n60 g20n60 vqe 24 d HGTG20N60B3 G20N60B
Text: interrii HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3 J a n u a ry . m Data Sheet 40A, 600V, UFS Series N-Channel IGBTs The HGT1S20N60B3S, the HGTP20N60B3 and the HGTG20N60B3 are Generation III MOS gated high voltage switching devices combining the best features of MOSFETs
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HGT1S20N60B3S,
HGTP20N60B3,
HGTG20N60B3
HGTP20N60B3
HGTG20N60B3
HG20N60B3
hG20N60
hg20n60b3 equivalent
HG20N60B
G20N60B3
hg*20n60
g20n60
vqe 24 d
G20N60B
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS70SMH-2 HIGH-SPEED SWITCHING USE FS70SMH-2 OUTLINE DRAWING Dimensions in mm .4.5. 15.9MAX 1.5 /- Ç 20.0 50 r ^2 f 3.2 5.45 5.45 0.6 4 Q w r 2.5V DRIVE V d s s .100V
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FS70SMH-2
135ns
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS30SMH-3 HIGH-SPEED SWITCHING USE OUTLINE DRAWING Dimensions in mm .4.5. 1.5 4 Q w r 2.5V DRIVE V d s s . 150V rDS ON (MAX). 8 7 m i2
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FS30SMH-3
100ns
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TH 2190 mosfet
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS5VSH-2 HIGH-SPEED SWITCHING USE ; FS5VSH-2 OUTLINE DRAWING Dimensions in mm 10.5MAX. ! I 0.8 \ - 1. i o • 2.5V DRIVE • VDSS . 100V • rDS ON (MAX) .0.440
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O-220S
TH 2190 mosfet
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS1OVSJ-3 HIGH-SPEED SWITCHING USE FS1 OVSJ-3 I • 4V DRIVE • VDSS . 150V i • ros O N ( m a x ) . 160mn
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160mn
1CH23
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS5VS-3 HIGH-SPEED SWITCHING USE FS5VS-3 • 10V DRIVE • VDSS .150V • rD S O N (MAX) .0.38S2
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pi6v
Abstract: No abstract text available
Text: LTC 1433/LTC 1434 450mA, Low Noise Current Mode Step-Down DC/DC Converter F€RTUR€S D C S C R IC T IO n • ■ ■ ■ ■ ■ ■ ■ The LTC 1433/LTC1434 are monolithic pulse width modu lated step-down DC/DC converters. By utilizing current mode switching techniques, they provide excellent AC and
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1433/LTC
450mA,
15jjA
20-Lead
1433/LTC1434
100kHz,
LT1074)
LT1076)
16-Pin
24-Pin
pi6v
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS10UMJ-3 HIGH-SPEED SWITCHING USE FS10UMJ-3 OUTLINE DRAWING ILI U Dimensions in mm LU q w e 4V DRIVE 150 V 160 m i 2 V d s s . rDS ON (M AX).
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FS10UMJ-3
O-220
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743EPE
Abstract: lO01 MAX743CPE MAXL001 Caddell-Burns mpp schematic MAX742 MAX743 MAX743CWE MAX743EWE
Text: 19-2873; Rev 0; 7/90 Dual-Output, Switch-M ode R egulator +5V to ± 15V o r± 1 2 V _ F e a tu re s The MAX743 DC-DC converter IC contains all the active circuitry needed to build small, dual-output power sup plies. Relying on simple two-terminal inductors rather
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MAX743
200kHz,
743EPE
lO01
MAX743CPE
MAXL001
Caddell-Burns
mpp schematic
MAX742
MAX743CWE
MAX743EWE
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Untitled
Abstract: No abstract text available
Text: FSYA250D, FSYA250R ¡fì HARRIS S E M I C O N D U C T O R 27A, 200V, 0.100 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Ju ne 1 998 Features rDS C N) = 0.100S2 T h e D is c re te P ro d u c ts O p e ra tio n of H a rris S e m ic o n d u c to r h a s d eve lo pe d a s e rie s o f R a d ia tio n H a rd e n e d M O S F E T s
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FSYA250D,
FSYA250R
MIL-STD-750,
MIL-S-19500,
500ms;
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FS10KM
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS10KM-3 HIGH-SPEED SWITCHING USE FS10KM-3 OUTLINE DRAWING Dimensions in mm 10 ± 0.3 2 .8 1 0 .2 • w 10V DRIVE V d s s . 150V rDS ON (MAX). 170mi2
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FS10KM-3
170mi2
100ns
O-22QFN
FS10KM
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D-6840
Abstract: D6840 TXYS 91S50B IC-9017 c10006 d684
Text: □IXYS PRELIMINARY TECHNICAL INFORMATION Data Sheet No 91S50B July 1992 HIGH VOLTAGE "S" Series MOSIGBT IX S H 1 7 N 1 0 0 ,1 0 0 A Improved S C SO A Capability IX S M 1 7 N 1 0 0 ,1 0 0 A Part Number •
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91S50B
20kHz
IXSH17N100,
IXSM17N100
125-R
D-6840
D6840
TXYS
IC-9017
c10006
d684
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS30UMH-2 HIGH-SPEED SWITCHING USE FS30UMH-2 OUTLINE DRAWING Dimensions in mm * 2.5V DRIVE V d s s .1 0 0 V rDS ON (M A X ) .93mi2
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FS30UMH-2
93mii
O-220
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS10KMJ-3 HIGH-SPEED SWITCHING USE FS10KMJ-3 OUTLINE DRAWING Dimensions in mm 10 ± 0.3 2 .8 1 0 .2 4V DRIVE V d s s .150 V rDS ON (M AX). 160 m i 2
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FS10KMJ-3
160mi2
O-22QFN
7KH23
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Specification Quartz Crystals 3.58Mhz
Abstract: FT 16MHz quartz RESONATOR
Text: Philips Components-Signetics Document No. 853-1461 ECN No. 000319 Date of issue S ep te m be r6 ,1990 Status Product Specification 80CL410/83CL410 Low voltage/low power single-chip 8-bit microcontroller Application Specific Products DESCRIPTION FEATURES The 80CL410/83CL410 hereafter ge
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80CL410/83CL410
8XCL410)
8XCL410
80C51.
83CL410)
16-bit
Specification Quartz Crystals 3.58Mhz
FT 16MHz quartz RESONATOR
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Untitled
Abstract: No abstract text available
Text: ^M C C DEVICE SPECIFICATION S 4 4 0 2 /S 4 4 0 3 B iC M O S P L L C L O C K G E N E R A T O R S FEATURES APPLICATIONS Generates six clock outputs from 20 MHz to 80 MHz the S4403 generates ten outputs and HFOUT generates 10MHz to 40MHz 21 selectable phase/frequency relationships for
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S4403
10MHz
40MHz)
S4402/03
28-pin
S4402)
44-pin
S4403)
S4402A-66/D
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Untitled
Abstract: No abstract text available
Text: M ODEL IM C -1210 Inductors Surface Mount, Molded a FEATURES • Molded construction provides superior strength and moisture resistance • Tape and reel packaging for automatic handling, 2000/reel, EIA 481 ELECTRICAL SPECIFICATIONS STANDARD ELECTRICAL SPECIFICATIONS
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2000/reel,
IMC-1210
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d74c
Abstract: FSDV 3df s 45 58x58 5CCL MC139
Text: M INIATURE C O IL S TO KO f r i g n i J i, F r e q .r a n g e Type L ran ge Q T y p . kHz kHz MHz MHz MHz 10 10 0 1 1 0 10 0 “ 1-1-1-1-1“ il i il i 1mH~ 680(iH f& w 75-100 18 - 58pF (E -12 series) (6.2x6.2x6.2mm) IV 5PA 5PAG i i 1 ' H
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100jiH~
180pF
1500pF
12x13x6
330pF
-510pF
10jiH
d74c
FSDV
3df s 45
58x58
5CCL
MC139
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