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    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN3206 _ F C 1 3 2 No.3286 NPN Epitaxial Planar Silicon Composite Transistor Sw itching Applications with Bias Resistance F e a tu re s • On-chip bias resistances (R1 = lOkii, R2 = 47kC2) • Composite type with 2 transistors contained in the CP package currently in use, improving the


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    PDF EN3206 47kC2) FC132 2SC4047,

    2N4260

    Abstract: 2N3829 BFT29 BFT30 BFT31 BFT39 BFT40 BFT41 BFT53 BFY50
    Text: s[^pT e x a s Discrete Semiconductors In s tru m e n ts Polarity High Current NPN Amplifiers Device Type Case Maximum ratings BV BV BV CBO CEO EBO ICM mA V V V hFE1 hFE2 1C fT 1C mA min. min. max. MHz max. mA 250 250 300 1000 1000 1000 20 25 25 — 1000 1000


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    PDF BFT39 BFT29 BFT40 BFT30 BFT41 BFT31 BFY50 BFT53 BFY51 BFT54 2N4260 2N3829

    Untitled

    Abstract: No abstract text available
    Text: AN AL OG « F VI CF X INC 51E D A N A LO G D E V IC E S Dual PNP Transistor T-H3-2£r MAT-03 FEATURES Dual Matched PNP Transistor Low Offset Voltage. . Low Noise. 1nV/VHz @ 1kHz Max High G ain . .


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    PDF MAT-03 DAC-08, 992mA 992rnA, 008mA

    Untitled

    Abstract: No abstract text available
    Text: SANYO SEMICONDUCTOR FC107 CORP E2E D 7 cn 7 D 7 b Q0G7372 1 T-Sl-ll # P N P Epitaxial Planar S ilicon C o m p o site Transistor 2066 Switching Applications 3075 with Bias Resistances R1=47ki2, R2=47kO Features • On-chip bias resistors (Ri = 47kfl,R2= 47k£2)


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    PDF FC107 Q0G7372 47ki2, 47kfl FC107 2SA1341, 4139MO QD07373

    Untitled

    Abstract: No abstract text available
    Text: S A M S UN G SEMICONDUCTOR INC MPS6562 m g q J 7 cj t . 4 m 2 QQ07330 1 PNP EPITAXIAL SILICON TRANSISTOR T-29-21 AUDIO TRANSISTOR • Collector-Emltter Voltage: Vc*0 =25V • Collector Dissipation: Pc max =625mW • Complement to MPS6560 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)


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    PDF MPS6562 QQ07330 T-29-21 625mW MPS6560

    Untitled

    Abstract: No abstract text available
    Text: UNCONTROLLED DOCUMENT SC:0.25 PART NUMBER REV. SSF-H 233Q G YD PRELIM INARY IN P / N DIR ELECTRO-OPTICAL CHARACTERISTICS Ta = 2 5 'C PARAMETER lf=2DmA GREEN YELLOW UNITS 565 2.2 585 2.1 nm Vf PEAK WAVELENGTH FORWARD VOLTAGE TYP. TEST COND FORWARD VOLTAGE (MAX.)


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    PDF SSF-H233QGYD 100iiA

    Untitled

    Abstract: No abstract text available
    Text: S AM S U N G SEMICONDUCTOR INC MPS6601 14E O | 7^ 4142 0007331 3 | NPN EPITAXIAL SILICON TRANSISTOR ' T-29-21 AMPLIFIER TRANSISTOR TO-92 • Collector-Emitter Voltage: Vceo=25V • Collector Dissipation: Pc max =625mW A B S O L U T E MAXIMUM RATINGS (Ta=25°C)


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    PDF MPS6601 625mW T-29-21

    transistor marking 551

    Abstract: E551 1N MARKING marking code SAL sot-23
    Text: KST13/14 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS T ^ 2 S V Characteristic Symbol Collector-Base Voltage Collactor-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature


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    PDF KST13/14 OT-23 KST13 KST14 100mA 100mA, 100mA 100MHz transistor marking 551 E551 1N MARKING marking code SAL sot-23

    Small Signal MOSFET

    Abstract: No abstract text available
    Text: N-CHANNEL SMALL SIGNAL MOSFET 2N7000 FEATURES TO-92 1 • Fast switching speeds • TO-92 Package ' V ’ i 1. S o u rc e 2. Gate 3. Drain PRODUCT SUMMARY Part Number V ds R d S o ii ta< on ) 2N7000 60V 5.0 n 200 mA MAXIMUM RATINGS Characteristic Drain-Source Voltage (1)


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    PDF 2N7000 2N7000 Small Signal MOSFET

    C1684 r .85 transistor

    Abstract: 100JjA optocouplers 4n35 25CC 4N35 4N36 4N37 C1684 transistor transistor c1684
    Text: PHOTOTRANSISTOR OPTOCOUPLERS 0FT8ELECTB0HICS 4N35 4N36 4N37 DESCRIPTION PACKAGE DIMENSIONS “T h e 4N 35,4N 36, and 4N37 series of optocouplers have an NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. FEATURES & APPLICATIONS


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    PDF ST1603A C2Q79 E90700 hu1685 C1296A C1S94 VCEat10 C1684 r .85 transistor 100JjA optocouplers 4n35 25CC 4N35 4N36 4N37 C1684 transistor transistor c1684

    1B2 zener diode

    Abstract: 1b2 zener 2SC4671
    Text: Ordering number: EN 3483 2SC4671 No.3483 NPN Epitaxial P lan ar Silicon D arlington T ransistor Various Drivers Applications I A p p lic a tio n s . Suitable for use in switching of L load motor drivers, p rin te r ham m er drivers, relay drivers F e a tu re s


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    PDF 2SC4671 1B2 zener diode 1b2 zener 2SC4671

    MC1400

    Abstract: LT1021C-5 SOI series shunt lt1021-5 lt1021 APPLICATION lt 1021-10 LT 1021 lt1021dcn8-5 LTI021-7 LT1021A-10
    Text: LINEAR TECHNOLOGY CORP r r m EOE D • SSlflMbfl GQ03ST1 S ■ _ m g y -iy TEC H N O LO G Y LT1021 Precision R e fe re n c e F€ATUR€S DCSCRIPTIOfl ■ Pin Compatible w ith M ost Bandgap Reference Applications, Including Ref 0 1 , Ref 0 2 , LM 3 6 8 ,


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    PDF LM368, MC1400, MC1404, 100dB 551S4bfl DQ032T1 LT1021 SS104bà aa033Gb T-58-07 MC1400 LT1021C-5 SOI series shunt lt1021-5 lt1021 APPLICATION lt 1021-10 LT 1021 lt1021dcn8-5 LTI021-7 LT1021A-10

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification 3.3V Octal inverting buffer 3-State 74LVT240 FEATURES DESCRIPTION • Octal bus interface The LVT240 Is a high-performance BiCMOS product designed for V cc operation at 3.3V. • 3-State buffers This device is an octal inverting buffer that is ideal for driving bus


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    PDF 74LVT240 64mA/-32mA 500mA LVT240 74LVT 10MHz 500ns SV00092

    NB013

    Abstract: B014-024 cs b013
    Text: NB013,014 NPN , NB023,024(PNP ° NATL S E m C O N D 130 N A T L {DISCRETE! 56 SEMICOND, » E ^ b S D 1 1 3 0 0035501 5 (DISCRETE) 28C 35589 ^National r Æj Semiconductor - ' Z f ' Z D . / ¡ u o n f if m / D w o ! 30m A low noise transistors N B 0 2 3 .0 2 4 (PNP)


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    PDF NB013 NB023 300mV to-92 NB014 NB024 5D113D 3SSC15 B014-024 cs b013

    mp362

    Abstract: MP362A 5VBW
    Text: • 5QE D bQi?H.H4 00033ÔH. T I MICRO POWER SYSTEMS INC â k MICRO POWER MP360 MP361 MP362 SYSTEM S PNP DUAL MONOLITHIC SILICON NITROX’ TRANSISTORS MONOLITHIC MATCHED PAIRS FOR D IFFEREN TIAL AM PLIFIERS HIGH GAIN T'2.9 '27 h F E> 6 0 0 @ 10juA • IjuA


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    PDF MP360 MP361 MP362 10juA 10juA, MP361 MP360 MP361. MP362A 5VBW

    ispgal22lv10a

    Abstract: No abstract text available
    Text: is p G A L 2 2 L V 1 0 n-System Programmable Low Voltage E2CMOS® PLD Generic Array Logic >IN-SYSTEM PROGRAMMABLE — IEEE 1149.1 Standard TAP Controller Port Programming — 4-Wire Serial Programming Interface — Minimum 10,000 Program/Erase Cycles


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    PDF 22V10 22LV10/22V10 22LV10/2Tco ispGAL22LV10 ispgal22lv10a

    Untitled

    Abstract: No abstract text available
    Text: F£Ö to 199,! HI7131 m HARRIS Ë SE M IC O N D U C TO R Ë Ë Ë Ë Ë 3 1/2 D igit Low Power, High C M R R LCD D isplay Type A /D C onverter February 1993 Features Description • 120dB CMRR Equal to ±0.01 Count/V of Com­ mon Mode Voltage Error • Fast Recovery from Input Overrange Results


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    PDF HI7131 120dB 1-800-4-HARRIS

    Untitled

    Abstract: No abstract text available
    Text: SOT23 PNP SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR ISSUE 4 -JU N E 1996 FMMT589 _O _ I • FEATURES * Low equivalent on-resistance; RcE Mt 2 5 0 m ii a t 1A PARTMARKING DETAILS - 589 COMPLEMENTARY TYPE- FMMT489


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    PDF FMMT589 FMMT489 -100m -500mA, 100mA, 100MHz FMMT549

    Untitled

    Abstract: No abstract text available
    Text: SM-8 DUAL NPN M EDIUM POWER HIGH GAIN TRANSISTORS ZDT694 ISSU E 1 - NOVEM BER 1995_ Oll 1 c r c2Πc2U L .1 _U Bi _U Ei ~ n b2 1 1 E2 SM-8 8 LEAD SOT223 PARTMARKING DETAIL - T694 ABSOLUTE MAXIMUM RATINGS. SY M B O L PARAM ETER VALUE V CBO


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    PDF ZDT694 OT223) ce-10V, lB1-10m lB2-10mA, 300ns.

    Untitled

    Abstract: No abstract text available
    Text: UNCONTROLLED DOCUMENT PA R T N U M B ER REV. S S L—L X 5 0 F T 3 S I C / A A REV, E.C.N . N U M B ER AND R EV ISIO N A E.C.N , #11149 COMMENTS DATE 1 1.0 2.06 05,00 [00.197] ELECTRO-OPTICAL CHARACTERISTICS Ta =25‘C PARAMET[R MIN lf=20mA MAX 63B P[AK WAVELENGTH


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    PDF SSL-LX50FT3SIC/A 10/jS

    IN4804

    Abstract: IN4801 IN4807 IN4802 IN4806 1N950 IN4803 IN480 1N4807 1N952
    Text: _ 3 LORAL / F R E Ö U EN C Y / S E M I C O N D _ 96D 00812 D Jlb.HIGH VOLTAGE » • TUNING VAR ACTORS 7 ^ 0 7 ./ 9 SS71L21 OOOO êla T TYPICAL DIODE CAPACITANCE VS REVERSE VOLTAGE 1 N 4 8 0 1 , A , B, C, D through 1N4807, A , B, C, D 1 N 95 0 through 1N952


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    PDF 1N4801, 1N4807, 1N950 1N952 KV4801, KV4807, KV950 KV952 DO-14 SPECI/12/14 IN4804 IN4801 IN4807 IN4802 IN4806 IN4803 IN480 1N4807 1N952

    IN4148

    Abstract: IN4148 specifications IN4148 diode specifications IN4148 equivalent
    Text: BURR — BROLJN CORP H E I d I 7 3 i 3 b 5 o o m g g ^ T - s S - o Y " B U R R -B R O W N E g | \ REF200 3 DUAL CURRENT SOURCE o o CM U_ LU DC FEATURES APPLICATIONS • COMPLETELY FLOATING: No Common Connection • HIGH ACCURACY: lOOfiA ±0.5% • LOW TEMPERATURE COEFFICIENT:


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    PDF REF200 25ppm/Â REF200 17313kl5 IN4148 IN4146 IN4149 IN4148 IN4148 specifications IN4148 diode specifications IN4148 equivalent

    UC3879 application notes

    Abstract: unitrode u136 Unitrode U-136 Current-doubler rectifier uc3879 Application Note U-136 U136
    Text: y UNITRODE UC1879 UC2879 UC3879 Phase Shift Resonant Controller FEATURES • Programmable Output Turn On Delay; Zero Delay Available • Compatible with Voltage Mode or Current Mode Topologies • Practical Operation at Switching Frequencies to 300kHz • Four 100mA Totem Pole Outputs


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    PDF 300kHz 100mA 10MHz UC1879 UC2879 UC3879 UC3879 U-154, UC3879 application notes unitrode u136 Unitrode U-136 Current-doubler rectifier uc3879 Application Note U-136 U136

    SLVS132

    Abstract: TPS2814
    Text: TPS2811, TPS2812, TPS2814, TPS2815 DUAL HIGH-SPEED MOSFET DRIVERS SLVS132 - OCTOBER 1985 TPS2811, TPS2812, TPS2813. . D, P, AND PW PACKAGES TOP VIEW Industry-Standard Driver Replacement 20-ns Max Rise/Fall Times and 30 ns Max Propagation Delay - 1-nF Load


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    PDF TPS2811, TPS2812, TPS2814, TPS2815 SLVS132 20-ns 100-iiA TPS2813. TPS2814