Untitled
Abstract: No abstract text available
Text: RTL8305SB -Ver. D SINGLE-CHIP 5-PORT 10/100MBPS SWITCH CONTROLLER WITH DUAL MII INTERFACES DATASHEET Rev. 1.2 10 June 2003 Track ID: JATR-1076-21 RTL8305SB-Ver. D Datasheet COPYRIGHT 2003 Realtek Semiconductor Corp. All rights reserved. No part of this document may be reproduced, transmitted,
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RTL8305SB
10/100MBPS
JATR-1076-21
RTL8305SB-Ver.
JATR-1076-21
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RTL8305
Abstract: No abstract text available
Text: RTL8305SB SINGLE-CHIP 5-PORT 10/100MBPS SWITCH CONTROLLER DATASHEET Rev. 1.4 02 April 2004 Track ID: JATR-1076-21 RTL8305SB Datasheet COPYRIGHT 2004 Realtek Semiconductor Corp. All rights reserved. No part of this document may be reproduced, transmitted, transcribed, stored in a retrieval system, or translated into any language in any form or by any
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RTL8305SB
10/100MBPS
JATR-1076-21
RTL8305
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Untitled
Abstract: No abstract text available
Text: RTL8309SB SINGLE-CHIP 9-PORT 10/100MBPS SWITCH CONTROLLER DATASHEET Rev. 1.3 1 June 2004 Track ID: JATR-1076-21 RTL8309SB Datasheet COPYRIGHT 2003 Realtek Semiconductor Corp. All rights reserved. No part of this document may be reproduced, transmitted, transcribed,
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RTL8309SB
10/100MBPS
JATR-1076-21
JATR-1076-21
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Untitled
Abstract: No abstract text available
Text: RTL8305SB -Ver. D SINGLE-CHIP 5-PORT 10/100MBPS SWITCH CONTROLLER WITH DUAL MII INTERFACES DATASHEET Rev. 1.3 05 April 2004 Track ID: JATR-1076-21 RTL8305SB-Ver. D Datasheet COPYRIGHT 2004 Realtek Semiconductor Corp. All rights reserved. No part of this document may be reproduced,
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RTL8305SB
10/100MBPS
JATR-1076-21
RTL8305SB-Ver.
JATR-1076-21
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RTL8306S
Abstract: RTL8306 RTL8306SDM-GR
Text: RTL8306SD-GR RTL8306SDM-GR RTL8306SD-VC-GR RTL8306SDM-VC-GR RTL8306SD-VT-GR SINGLE-CHIP 6-PORT 10/100MBPS ETHERNET SWITCH CONTROLLER WITH DUAL MII/RMII INTERFACES DATASHEET Rev. 1.1 22 June 2007 Track ID: JATR-1076-21 Realtek Semiconductor Corp. No. 2, Innovation Road II, Hsinchu Science Park, Hsinchu 300, Taiwan
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RTL8306SD-GR
RTL8306SDM-GR
RTL8306SD-VC-GR
RTL8306SDM-VC-GR
RTL8306SD-VT-GR
10/100MBPS
JATR-1076-21
RTL8306SD/RTL8306SDM
306SDM-VC-GR
RTL8306S
RTL8306
RTL8306SDM-GR
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26C1000
Abstract: MX25C capacitor 330 1c6
Text: ¡ m i e MX26C1OOO 1 M-OFT [1 SSK X B CM OS MUL.T3PLJE-T1ME-I3ROGRAIV/IMABLE ROM FEA TU RES • • • • • • • • Standby current: 100hA 100 minimum erase/program cycles Package type: - 32 pin PDIP - 32 pin SO P - 32 pin PLCC - 32 pin TSOPii 128K x 8 organization
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MX26C1OOO
100hA
70/90/100/120/i
MX26C1000
32-PIN
QQ01504
26C1000
MX25C
capacitor 330 1c6
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UC3854 Design Note
Abstract: UC3854 test
Text: IN T E G R A T E D C IR C U IT S UC1854 UC2854 UC3854 UNITRODE High Power Factor Preregulator FEATURES DESCRIPTION • Control Boost PWM to 0.99 Power Factor • Limit Line Current Distortion To <5% • World-Wide Operation Without Switches • Feed-Forward Line Regulation
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UC1854
UC2854
UC3854
UC3854
U-134
UC3854 Design Note
UC3854 test
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENN6646 P-Channel Silicon MOSFET 3LP01N Ultrahigh-Speed Switching Applications Package Dimensions Features • Low ON-resistance. unit : mm • Ultrahigh-speed switching. 2178 • 2.5V drive. Specifications Absolute Maximum Ratings at T a=25°C
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ENN6646
3LP01N
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led bar siemens
Abstract: No abstract text available
Text: SIEMENS CfIPNTSi OPTO SIEMENS 44E D Ô23b32b DD OM ^n S ISIEX OLB 2620 YELLOW YLB 2720 GREEN GLB 2820 HIGH EFFICIENCY RED LIGHT BARS T- Hum. Displays Bar Graphs Light Bars Package Dimensions in Inches mm 16 IS M 13 12 I I 10 9 l*J Ui w y r?l FE A TU R E S
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23b32b
OLB2620
YLB2720
GLB2820
led bar siemens
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BYV26E
Abstract: BYV26C BYV26A islp
Text: Temic BYV26 S e m i c o n d u c t o r s Very Fast Soft-Recovery Avalanche Rectifier Features • Glass passivated junction • Hermetically sealed package • Very low switching losses • Low reverse current • High reverse voltage Applications Switched mode power supplies
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BYV26
BYV26A
BYV26B
BYV26C
BYV26D
BYV26E
islp
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Untitled
Abstract: No abstract text available
Text: * DUAL SUPPLY SYNERGY o c ta l e c l-to -ttl S E M IC O N D U C T O R Clockworks s y io o h a b « 100HA643 DESCRIPTION FEATURES E C L /T T L v e rs io n o f p o p u la r E C L in P S ™ E 1 11 4 0 0 p s w ith in d e v ic e sk ew 8 0 0 p s p a rt-to -p a rt s k e w
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SY100HA643
10/100H
SY10HA643JC
10HA643JCTR
SY100HA643JC
100HA643JCTR
SY10HA643JI
SY10HA643JITR
SY100HA643JI
SY100HA643JITR
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d3s diode
Abstract: EIGHT n-channel MOSFET ARRAY AN0140ND
Text: AN01 in c . 8 Channel MOSFET Array Monolithic N-Channel Enchancement Mode Ordering Information_ Order Number / Package * ' If BV qss/ BV dgs min RDS(ON) (max) 160V 350Ü 200V 300Ì2 300V 300CÌ 25mA 320V 350£2 25mA 400V 350£2
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18-Lead
AN0116NA
AN0120NA
AN0130NA
AN0132NA
AN0140NA
SOW-20*
AN0116WG
AN0132WG
AN0140WG
d3s diode
EIGHT n-channel MOSFET ARRAY
AN0140ND
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1N4148 Micro MELF
Abstract: 1n4148 melf package
Text: Tem ic MCL4148.MCL4448 S e m i c o n d u c t o r s Silicon Epitaxial Planar Diodes Features • Saving space • Hermetic sealed parts • Fits onto SOD 323 / SOT 23 footprints • Electrical data identical with the devices 1N4148 and 1N4448 respectively •
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MCL4148
MCL4448
1N4148
1N4448
24-Jun-96
1N4148 Micro MELF
1n4148 melf package
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Untitled
Abstract: No abstract text available
Text: Supertex Inc. 2N7007 N-Channel Enhancement-Mode Vertical DMOS FET Ordering information / R d S ON b v dgs (max) 240V 45£2 Order Number / Package SI B Voss TO-92 150mA 2N7007 Features Advanced DMOS Technology 7“ Free from secondary breakdown n Low power drive requirement
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2N7007
150mA
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3701A
Abstract: 2SC4632
Text: Ordering num ber: EN 3701A 2SC4632 NPN Triple Diffused Planar Silicon Transistor High-Voltage Amp, High-Voltage Switching Applications F e a tu r e s • High breakdown voltage V qeo min = 1200V . • Sm all Cob (typical Cob = 1.6pF). •Full-isolation package.
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2SC4632
3701A
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SN74ALVCH162601
Abstract: No abstract text available
Text: SN74ALVCH162601 18-BIT UNIVERSAL BUS TRANSCEIVER WITH 3-STATE OUTPUTS SC ES 026- JULY 1995 • Member of the Texas Instruments Wldebus Family • EPIC™ Enhanced-Performance Implanted CMOS Submicron Process • UBT™ (Universal Bus Transceiver) Combines D-Type Latches and D-Type
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SN74ALVCH162601
18-BIT
SCES026-
26-ii
MIL-STD-883C,
JESD-17
bl723
D1D24S1
SN74ALVCH162601
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mps8050
Abstract: B5G1 MPS805 DM07S
Text: MPS8050 _ National Discrete POW ER & Signal Technologies S em icon ducto r" MPS8050 NPN General Purpose Amplifier This device is designed for general purpose audio amplifier applications at collector currents to 500 mA. Sourced from Process 30. Absolute Maximum Ratings*
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MPS8050
Lj50113G
DM07S0
mps8050
B5G1
MPS805
DM07S
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Untitled
Abstract: No abstract text available
Text: 5 High-Speed CMOS 3.3V 8- Bit Transparent Latch QS74LVC573A Quality Semiconductor, I nc. FEATURES/BENEFITS DESCRIPTION • • • • • • • • The LVC573A is an 8-bit buffered latch with threestate outputs that is ideal for driving high capacitance
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QS74LVC573A
LVC573A
MDSL-00322-00
QS74LVC
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OP644SL
Abstract: OP123 OP223 OP641 OP641SL OP642SL OP643SL
Text: OPTEK Product Bulletin OP641SL June 1996 NPN Silicon Phototransistors Types OP641SL, OP642SL, OP643SL, OP644SL Features Absolute Maximum Ratings Ta = 25° C unless otherwise noted • • • • • Collector-Emitter Voltage . 25 V
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OP641SL
OP641SL,
OP642SL,
OP643SL,
OP644SL
OP123
OP223
OP644SL
OP641
OP642SL
OP643SL
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01-I04
Abstract: KM641001A KM641001A-15 KM641001A-20
Text: PRELIMINARY KM641001A CMOS SRAM 256K x 4 B it With OE High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 15,17,20 ns(Max.) • Low Power Dissipation Standby (TTL) The KM641001A is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words
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KM641001A
KM641001A-15
KM641001A-17
KM641001A-20
KM641001AJ
28-SQJ-400
KM641001A
576-bit
OOPm53
01-I04
KM641001A-15
KM641001A-20
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OP506W
Abstract: S-7600
Text: P ro d u c t B u lle tin O P506W bTTÖSflO 0 0 0 2 b l 7 OPTEK 701 J u n e 1996 NPN Silicon Phototransistor Type QP506W • Wide receiving angle • T-1 package style • Small package size for space limited applications D e s c rip tio n The OP506W consists of an NPN silicon
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OP506W
S-7600
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Untitled
Abstract: No abstract text available
Text: BIC801M Bias Controlled Monolithic IC VHF/UHF RF Amplifier HITACHI ADE-208-705C Z 4th. Edition Nov. 1, 1998 Features • Bias Controlled Monolithic IC (No external DC biasing voltage on gatel.); To reduce using parts cost & PC board space. • High gain;
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BIC801M
ADE-208-705C
200pF,
OT-143mod)
BIC801M
ind-45
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Untitled
Abstract: No abstract text available
Text: Central CMPT5401 Sem iconductor Corp. PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5401 type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications.
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CMPT5401
CMPT5401
OT-23
100hA
100MHz
00103ti
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Untitled
Abstract: No abstract text available
Text: SN54LVC541A, SN74LVC541A OCTAL BUFFERS/DRIVERS WITH 3-STATE OUTWITS SCAS29BG - JANUARY 1993 - REVISED JANUARY 1998 EPIC Enhanced-Performance Implanted SN54LVC541A . . . J O R W PACKAGE SN74LVC541A . . . DB, DW, OR PW PACKAGE (TOP VIEW CMOS) Submicron Process
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SN54LVC541A,
SN74LVC541A
SCAS29BG
MIL-STD-883,
JESD17
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