semikron semitrans
Abstract: No abstract text available
Text: SKM 100GB128D - ." ' Absolute Maximum Ratings Symbol Conditions IGBT / )- . % / 1-* . %45 1)* 12- & 3* . 1*- & 1-* & 7)* / 1)- . 1* ; )- . =- & 3* . #- & 1-* & ?)* & )* & 2*>>> B 1-*
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100GB128D
semikron semitrans
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100GB128D
Abstract: No abstract text available
Text: SKM 100GB128D - ." ' Absolute Maximum Ratings Symbol Conditions IGBT / )- . % / 1-* . %45 1)* 12- & 3* . 1*- & 1-* & 7)* / 1)- . 1* ; )- . =- & 3* . #- & 1-* & ?)* & )* & 2*>>> B 1-*
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100GB128D
100GB128D
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Untitled
Abstract: No abstract text available
Text: SKM 100GB128D Absolute Maximum Ratings Symbol Conditions IGBT % %56 7 9" 1 3 SEMITRANSTM 2 SPT IGBT Module SKM 100GB128D Features !"
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100GB128D
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SKM100GB128D
Abstract: No abstract text available
Text: SKM 100GB128D - ." ' Absolute Maximum Ratings Symbol Conditions IGBT / )- . % / 1-* . %45 1)* 12- & 3* . 1*- & 1-* & 7)* / 1)- . 1* ; )- . =- & 3* . #- & 1-* & ?)* & )* & 2*>>> B 1-*
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100GB128D
SKM100GB128D
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100GB128DN
Abstract: skm100gb128dn
Text: SKM 100GB128DN Absolute Maximum Ratings Symbol Conditions IGBT % %56 8 :" 1 3 SEMITRANSTM 2N SPT IGBT Module SKM 100GB128DN Preliminary Data Features
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100GB128DN
100GB12mpedance
100GB128DN
skm100gb128dn
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Abstract: No abstract text available
Text: SKM 100GB128DN Absolute Maximum Ratings Symbol Conditions IGBT % %56 7 9" 1 3 SEMITRANSTM 2N SPT IGBT Module SKM 100GB128DN Preliminary Data Features
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100GB128DN
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Untitled
Abstract: No abstract text available
Text: SKM 100GB128D Absolute Maximum Ratings Symbol Conditions IGBT % %56 7 9" 1 3 SEMITRANSTM 2 SPT IGBT Module SKM 100GB128D Features !"
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100GB128D
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Abstract: No abstract text available
Text: SKM 100GB128D Absolute Maximum Ratings Symbol Conditions IGBT % %56 8 :" 1 3 SEMITRANSTM 2 SPT IGBT Module SKM 100GB128D Preliminary Data Features
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100GB128D
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453gb12e4s
Abstract: SEMIX 71GD12E4S 300gb12e4 igbt cross-reference SKM200GB128D SEMiX 202GB12E4s SEMiX453GB12E4 101GD12E4s IGBT cross reference semikron 303GD12E4-c
Text: Application Note AN-9001 Revision: 01 Issue Date: 2009-03-01 Prepared by: Dr. Arendt Wintrich Key Words: IGBT, Trench4, Switching Behaviour, Cross Reference IGBT4 and free wheeling diode CAL4 in IGBT modules General properties . 1
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AN-9001
453gb12e4s
SEMIX 71GD12E4S
300gb12e4
igbt cross-reference
SKM200GB128D
SEMiX 202GB12E4s
SEMiX453GB12E4
101GD12E4s
IGBT cross reference semikron
303GD12E4-c
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semikron IGBT 75a 600v module
Abstract: No abstract text available
Text: SKM 100 GB 128 DN Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C
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