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    100E193 Datasheets Context Search

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    E160

    Abstract: E193 MC10193 SY100E193 SY10E193
    Text: Micrel, Inc. SY10E193 100E193 SY10E193 ERROR DETECTION/ CORRECTION CIRCUIT FEATURES 100E193 DESCRIPTION • Hamming code generation ■ Extended 100E VEE range of –4.2V to –5.5V The SY10/100E193 are error detection and correction EDAC circuits designed for use in new, high- performance


    Original     		SY10E193 SY100E193 SY10/100E193 MC10193. M9999-032006 E160 E193 MC10193 SY100E193 SY10E193 PDF

    "on semiconductor"

    Abstract: E160 MC100E193 MC100E193FN MC100E193FNR2 MC10E193 MC10E193FN MC10E193FNR2 p4350
    Text: MC10E193, 100E193 5VĄECL Error Detection/ Correction Circuit The MC10E/100E193 is an error detection and correction EDAC circuit. Modified Hamming parity codes are generated on an 8-bit word according to the pattern shown in the logic symbol. The P5 output gives the parity of the whole word. The word parity is also


    Original     		MC10E193, MC100E193 MC10E/100E193 12-bit r14525 MC10E193/D "on semiconductor" E160 MC100E193 MC100E193FN MC100E193FNR2 MC10E193 MC10E193FN MC10E193FNR2 p4350 PDF

    E160

    Abstract: E193 MC10193 SY100E193 SY10E193 SECDED
    Text: SY10E193 100E193 FINAL ERROR DETECTION/ CORRECTION CIRCUIT FEATURES DESCRIPTION • Hamming code generation ■ Extended 100E VEE range of –4.2V to –5.5V The SY10/100E193 are error detection and correction EDAC circuits designed for use in new, high- performance


    Original     		SY10E193 SY100E193 SY10/100E193 MC10193. 12-bit SY100E193JC J28-1 SY100E193JCTR E160 E193 MC10193 SY100E193 SY10E193 SECDED PDF

    DL140

    Abstract: E160 MC100E193 MC10E193
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Error Detection/Correction MC10E193 Circuit 100E193 The MC10E/100E193 is an error detection and correction EDAC circuit. Modified Hamming parity codes are generated on an 8-bit word according to the pattern shown in the logic symbol. The P5 output gives


    Original     		MC10E193 MC100E193 MC10E/100E193 12-bit MC10E193/D* MC10E193/D DL140 E160 MC100E193 MC10E193 PDF

    SECDED

    Abstract: E160 E193 MC10193 SY100E193 SY10E193
    Text: ERROR DETECTION/ CORRECTION CIRCUIT FEATURES SY10E193 100E193 DESCRIPTION • Hamming code generation ■ Extended 100E VEE range of –4.2V to –5.5V The SY10/100E193 are error detection and correction EDAC circuits designed for use in new, high- performance


    Original     		SY10E193 SY100E193 SY10/100E193 MC10193. 12-bit SY100E193JC J28-1 SY100E193JCTR SECDED E160 E193 MC10193 SY100E193 SY10E193 PDF

    E142 wafer format

    Abstract: HEL32 MR 4710 IC 300w power amplifier circuit diagram HEL05 klt22 HEL12 HEL31 HEL16 HLT22 HLT28
    Text: DL140/D Rev. 6, Jan-2001 High Performance ECL Data ECLinPS and ECLinPS Lite™ High Performance ECL Device Data ECLinPS, ECLinPS Lite, and Low Voltage ECLinPS DL140/D Rev. 6, Jan–2001  SCILLC, 2001 Previous Edition  2000 “All Rights Reserved”


    Original     		DL140/D Jan-2001 r14525 E142 wafer format HEL32 MR 4710 IC 300w power amplifier circuit diagram HEL05 klt22 HEL12 HEL31 HEL16 HLT22 HLT28 PDF

    SECDED

    Abstract: No abstract text available
    Text: This document, MC10E193/D has been canceled. LAN was sent 01/03/2002  Semiconductor Components Industries, LLC, 2000 October, 2000 – Rev. 4 1 Publication Order Number: MC10E193/D MC10E193, 100E193 MC10E193, 100E193 5VĄECL Error Detection/ Correction Circuit


    Original     		MC10E193/D MC10E193/D MC10E193, MC100E193 MC100E193 MC10E/100E193 12-bit r14525 SECDED PDF

    SOP8 8002 Amplifier

    Abstract: SCR s838 TRANSISTOR s838 4606 MOSFET INVERTER transistor SMD DK QB Marking Code SMD CM sot-23-5 4606 inverter reg EL34 SMD MOSFET DRIVE DATASHEET 4606 voltage regulator SOT-223-4 C5 87
    Text: Shortform Catalog June 2003 Micrel Semiconductor • 1849 Fortune Drive • San Jose, CA 95131 • USA • tel +1 408 944-0800 • fax +1 408 944-0970 Micrel Shortform Catalog June 2003 2003 Micrel, Inc. The information furnished by Micrel, Inc., in this publication is believed to be accurate and reliable. However, no responsibility is assumed by Micrel for its use, nor any


    Original     		TinyFE81090 M-0009 SOP8 8002 Amplifier SCR s838 TRANSISTOR s838 4606 MOSFET INVERTER transistor SMD DK QB Marking Code SMD CM sot-23-5 4606 inverter reg EL34 SMD MOSFET DRIVE DATASHEET 4606 voltage regulator SOT-223-4 C5 87 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA E SEMICONDUCTOR • 1 H M b3b7252 MOTOROLA OU H MT T E SC 4Qfl LO ÊIO I TECHNICAL DATA Error Detection/Correction Circuit MC10E193 100E193 The MC10E/100E193 is an error detection and correction (EDAC circuit. Modified Hamm ing parity codes are generated on an 8-bit word


    OCR Scan     		b3b7252 MC10E193 MC100E193 MC10E/100E193 MC10193, PDF

    SECDED

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Error Detection/Correction Circuit MC10E193 100E193 The M C 10E/100E193 is an error detection and correction EDAC circuit. Modified Hamm ing parity codes are generated on an 8-bit word according to the pattern shown in the logic sym bol. The P5 output gives


    OCR Scan     		MC10E193 MC100E193 12-bit DL140 SECDED PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Error Detection/Correction Circuit MC10E193 100E193 The MC10E/100E193 is an error detection and correction EDAC circuit. Modified Hamming parity codes are generated on an 8-bit word according to the pattern shown in the logic symbol. The P5 output gives the parity of the


    OCR Scan     		MC10E193 MC100E193 MC10E/100E193 MC10193, expan1100 DL140 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Error Detection/Correction Circuit MC10E193 100E193 The MC10E/100E193 is an error detection and correction EDAC circuit. Modified Hamming parity codes are generated on an 8-bit word according to the pattern shown in the logic symbol. The P5 output gives


    OCR Scan     		MC10E193 MC100E193 MC10E/100E193 12-bit PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Error Detection/Correction Circuit MC10E193 100E193 The MC10E/100E193 is an error detection and correction EDAC circuit. Modified Hamming parity codes are generated on an 8-bit word according to the pattern shown in the logic symbol. The P5 output gives


    OCR Scan     		MC10E193 MC100E193 MC10E/100E193 12-bit DL140 b3b7252 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Error Detection/C orrection Circuit M C10E193 M C 100E193 The MC10E/100E193 is an error detection and correction EDAC circuit. Modified Hamming parity codes are generated on an 8-bit word according to the pattern shown in the logic symbol. The P5 output gives


    OCR Scan     		C10E193 100E193 MC10E/100E193 12-bit PDF

    Untitled

    Abstract: No abstract text available
    Text: * ERROR DETECTION/ CORRECTION CIRCUIT SYNERGY SY10E193 100E193 SEMICONDUCTOR FEATURES DESCRIPTION • Hamming code generation ■ Extended 100E V ee range of -4.2V to -5.5V ■ 8-bit wide ■ Expandable for more width ■ Provides parity register ■ Fully compatible with industry standard 10KH,


    OCR Scan     		SY10E193 SY100E193 lnternal75KÂ MC10E/100E193 28-pin SY10/100E193 PDF

    Untitled

    Abstract: No abstract text available
    Text: ERROR DEFECTION SYN ER G Y iv iU E iy j C O R R E C T I O N CIRCl.lH ' V 1Q0 E193 S E M IC O N D U C TO R BH3353I31TS! FEATURES • Hamming code generation ■ Extended 100E V ee range of -4.2V to -5.5V ■ 8-bit wide ■ Expandable for more width ■ Provides parity register


    OCR Scan     		lntemal75K MC10E/100E193 28-pin BH3353I31TS! SY10/100E193 SY10E193JC SY10E193JCTR SY100E193JC SY100E193JCTR J28-1 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA • • • • • • M C10E193 M 100E193 Hamming Code Generation 8-Bit Word, Expandable Provides Parity of Whole Word Scannable Parity Register Extended 100E Vgg Range of -4 .2 V to 75 k il Input Pulldown Resistors


    OCR Scan     		C10E193 C100E193 MC10E/100E193 PDF

    block diagram code hamming

    Abstract: SECDED 7 bit hamming code hamming code E160 E193 MC10193 SY100E193 SY10E193 generate the parity after shift register block
    Text: *SYNERGY ERROR DETECTION/ CORRECTION CIRCUIT S E M IC O N D U C TO R FEATURES SY10E193 100E193 D E S C R IP T IO N I Hamming code generation i 8-bit wide Expandable for more width Provides parity register ESD protection of 2000V Fully compatible with Industry standard 10KH,


    OCR Scan     		SY10E193 SY100E193 lnternal75Kii MC10E/100E193 SY100E193 S0013A1 000D7D2 block diagram code hamming SECDED 7 bit hamming code hamming code E160 E193 MC10193 generate the parity after shift register block PDF

    Untitled

    Abstract: No abstract text available
    Text: ERROR DETECTION/ CORRECTION CIRCUIT SYNERGY SY10E193 100E193 SEMICONDUCTOR DESCRIPTION FEATURES • Hamming code generation ■ Extended 100E V ee range of -4 .2 V to -5 .5 V ■ 8-bit wide ■ Expandable for more width ■ Provides parity register ■ Fully com patible with industry standard 10KH,


    OCR Scan     		SY10E193 SY100E193 lnternal75KÂ C10E/100E193 10/100E SY10E193JC J28-1 SY10E193JCTR SY100E193JC PDF

    Untitled

    Abstract: No abstract text available
    Text: * ERR OR DETECTION/ C O RR ECT IO N CIRCUIT SYNERGY SEMICONDUCTOR FEATURES DESCRIPTION • Hamming code generation ■ Extended 100E V ee range of -4.2V to -5.5V ■ 8-bit wide ■ Expandable for more width ■ Provides parity register ■ Fully compatible with industry standard 10KH,


    OCR Scan     		SY10E193 SY100E193 lnternal75KD MC10E/100E193 28-pin SY10/100E193 PDF

    Untitled

    Abstract: No abstract text available
    Text: * ERROR DETECTION/ CORRECTION CIRCUIT SYNERGY SY10E193 100E193 SEMICONDUCTOR FEATURES DESCRIPTION • Hamming code generation ■ Extended 100E V ee range of -4.2V to -5.5V ■ 8-bit wide ■ Expandable for more width ■ Provides parity register ■ Fully compatible with industry standard 10KH,


    OCR Scan     		SY10E193 SY100E193 lnternal75KÂ MC10E/100E193 28-pin SY10/100E193 PDF

    Untitled

    Abstract: No abstract text available
    Text: * ERROR DETECTION/ CORRECTION CIRCUIT SYNERGY SEMICONDUCTOR FEATURES DESCRIPTION • ■ ■ ■ ■ ■ Hamming code generation 8-bit wide Expandable for more width Provides parity register ESD protection of 2000V Fully compatible with industry standard 10KH,


    OCR Scan     		lnternal75Ki2 MC10E/100E193 SY10E193 SY100E193 pa850 SY10E193JC J28-1 SY100E193JC PDF

    block diagram code hamming

    Abstract: ot 112 generate the parity after shift register block SECDED E160 E193 MC10193 SY100E193 SY10E193 p4350
    Text: * ERROR DETECTION/ CORRECTION CIRCUIT SYNERGY S E M IC O N D U C T O R SY10E193 100E193 DESCRIPTION FEATURES • Hamming code generation ■ Extended 100E V ee range of -4.2V to -5.5V ■ 8-bit wide ■ Expandable for more width ■ Provides parity register


    OCR Scan     		SY10E193 SY100E193 lnternal75K MC10E/100E193 SY10/100E193 SY10E193JC J28-1 SY10E193JCTR SY100E193JC block diagram code hamming ot 112 generate the parity after shift register block SECDED E160 E193 MC10193 SY100E193 p4350 PDF

    Untitled

    Abstract: No abstract text available
    Text: Numeric Index Family Specification and General Information Device Data Sheets Package Data This databook contains device specifications for Motorola's ECLinPS advanced ECL logic family. ECLinPS ECL in picoseconds was developed in response to the need for an even higher performance


    OCR Scan     		C62460 PDF