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Kyocera AVX Components 100B240JP500XT Multilayer Ceramic Capacitor, 24 pF, 500 V, ? 5%, C0G (NP0), 1111 [2828 Metric] - Custom Tape W/Leader (Alt: 100B240JP500XT)
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Avnet Americas	100B240JP500XT	Tape w/Leader		16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B240JP500XT					1 - 10 - 100 - 1000 $4.08 10000 $4.08	Get Quote
Avnet Asia	100B240JP500XT			26 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Kyocera AVX Components 100B240JP500XT1K MLC A/B/R - Custom Tape W/Leader (Alt: 100B240JP500XT1K)
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Avnet Americas	100B240JP500XT1K	Tape w/Leader		16 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B240JP500XT1K					1 - 10 - 100 - 1000 $2.96 10000 $2.96	Get Quote
Kyocera AVX Components 100B240JP500XC100 Silicon RF Capacitors / Thin Film MLC A/B/R
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Mouser Electronics	100B240JP500XC100					1 $6.22 10 $5.39 100 $4.14 1000 $3.52 10000 $3.45	Get Quote
Richardson RFPD	100B240JP500XC100				100	1 - 10 - 100 $3.45 1000 $3.11 10000 $2.75	Buy Now
Kyocera AVX Components 100B240JP500XTV1K Silicon RF Capacitors / Thin Film MLC A/B/R
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Mouser Electronics	100B240JP500XTV1K					1 - 10 - 100 - 1000 $2.96 10000 $2.96	Get Quote
American Technical Ceramics Corp ATC100B240JP500XC
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Bristol Electronics	ATC100B240JP500XC		100			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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100B240JP500X Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
C8450 Abstract: MRF5S4140H Text: Document Number: MRF5S4140H Rev. 1, 1/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S4140HR3 MRF5S4140HSR3 Designed for broadband commercial and industrial applications with frequencies from 400 to 500 MHz. The high gain and broadband performance of these	Original	MRF5S4140H 28-volt MRF5S4140HR3 MRF5S4140HSR3 MRF5S4140H C8450	PDF
100B471JP200X Abstract: 100B110JP500X T495X106K035AS4394 400S CDR33BX104AKWS MRF19045R3 MRF19045SR3 100B8R2CP500X Text: MOTOROLA Order this document by MRF19045/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF19045R3 MRF19045SR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from	Original	MRF19045/D MRF19045R3 MRF19045SR3 MRF19045R3 100B471JP200X 100B110JP500X T495X106K035AS4394 400S CDR33BX104AKWS MRF19045SR3 100B8R2CP500X	PDF
FERRITE BEAD 1000 OHM 0805 Abstract: MW6S010NR1 A113 A114 A115 AN1955 C101 JESD22 MW6S010GNR1 CRCW12061001F100 Text: Freescale Semiconductor Technical Data Document Number: MW6S010N Rev. 3, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier	Original	MW6S010N MW6S010NR1 MW6S010GNR1 FERRITE BEAD 1000 OHM 0805 A113 A114 A115 AN1955 C101 JESD22 MW6S010GNR1 CRCW12061001F100	PDF
UHF TRANSISTOR Abstract: J152-ND J151-ND RF MOSFET CLASS AB Coaxicom transistor SMD g 28 100B100JP500X RC1206JR-07100KL smd transistor 259 4404 mosfet Text: The innovative Semiconductor Company! HVV0405-175 HIGH VOLTAGE, HIGH RUGGEDNESS UHF Pulsed Power Transistor 420-470 MHz, 300µs Pulse, 10% Duty Cycle For UHF band, Weather and Long Range Radar Applications TM FEATURES • Silicon MOSFET Technology • Operation from 24V to 50V	Original	HVV0405-175 429-HVVi EG-01-DS10B 05/XX/09 UHF TRANSISTOR J152-ND J151-ND RF MOSFET CLASS AB Coaxicom transistor SMD g 28 100B100JP500X RC1206JR-07100KL smd transistor 259 4404 mosfet	PDF
J0743 Abstract: MRF5S4140H j0810 100B121JP500X A114 A115 AN1955 C101 JESD22 MRF5S4140HR3 Text: Document Number: MRF5S4140H Rev. 2, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S4140HR3 MRF5S4140HSR3 Designed for broadband commercial and industrial applications with frequencies from 400 to 500 MHz. The high gain and broadband performance of these	Original	MRF5S4140H MRF5S4140HR3 MRF5S4140HSR3 28-volt MRF5S4140HR3 J0743 MRF5S4140H j0810 100B121JP500X A114 A115 AN1955 C101 JESD22	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF19045R3 MRF19045SR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1 . 9 t o 2 . 0 G H z . S u i t a b l e f o r T D M A , CDMA and multic arrier amplifier	Original	MRF19045R3 MRF19045SR3	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF19045 Rev. 7, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF19045LR3 MRF19045LSR3 Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier	Original	MRF19045 MRF19045LR3 MRF19045LSR3	PDF
2a258 transistor Abstract: Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index Text: Device Data Book WIRELESS RF PRODUCT DEVICE DATA ireless DL110/D Rev. 13 3/2002 2.5G 3G Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii	Original	DL110/D 2a258 transistor Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index	PDF
MW6S010NR1 Abstract: A114 A115 AN1955 C101 JESD22 MW6S010 MW6S010GMR1 MW6S010GNR1 MW6S010MR1 Text: Freescale Semiconductor Technical Data Document Number: MW6S010 Rev. 1, 5/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier	Original	MW6S010 MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1 A114 A115 AN1955 C101 JESD22 MW6S010 MW6S010GMR1	PDF
400S Abstract: AN1955 CDR33BX104AKWS MRF19045LR3 MRF19045LSR3 Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF19045/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF19045LR3 MRF19045LSR3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs	Original	MRF19045/D MRF19045LR3 MRF19045LSR3 MRF19045LR3 400S AN1955 CDR33BX104AKWS MRF19045LSR3	PDF
6 pin mosfet Z2 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF19045 MRF19045R3 MRF19045S MRF19045SR3 The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1.9 to 2. 0 G Hz . S u i ta b l e fo r T D M A, C D M A a n d mul ti c arri er ampl i fi er	Original	MRF19045 MRF19045R3 MRF19045S MRF19045SR3 6 pin mosfet Z2	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF19045 Rev. 7, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF19045LR3 MRF19045LSR3 Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier	Original	MRF19045 MRF19045LR3 MRF19045LSR3	PDF
400S Abstract: AN1955 CDR33BX104AKWS MRF19045 MRF19045LR3 MRF19045LSR3 Text: Freescale Semiconductor Technical Data Document Number: MRF19045 Rev. 9, 10/2008 RF Power Field Effect Transistors MRF19045LR3 MRF19045LSR3 Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier	Original	MRF19045 MRF19045LR3 MRF19045LSR3 MRF19045LR3 400S AN1955 CDR33BX104AKWS MRF19045 MRF19045LSR3	PDF
FERRITE BEAD 1000 OHM 0805 Abstract: MW6S010NR1 A113 A114 A115 AN1955 C101 JESD22 MW6S010 MW6S010GMR1 Text: Freescale Semiconductor Technical Data Document Number: MW6S010 Rev. 2, 5/2006 Replaced by MW6S010NR1/GNR1. There are no form, fit or function changes with this part replacement. N suffix indicates RoHS compliant part. RF Power Field Effect Transistor MW6S010MR1	Original	MW6S010 MW6S010NR1/GNR1. MW6S010MR1 MW6S010GMR1 MW6S010MR1 FERRITE BEAD 1000 OHM 0805 MW6S010NR1 A113 A114 A115 AN1955 C101 JESD22 MW6S010 MW6S010GMR1	PDF

IM3910 Abstract: 400S AN1955 CDR33BX104AKWS MRF19045 MRF19045LR3 MRF19045LSR3 100B471JP200X RM73B2 Arlon Text: Freescale Semiconductor Technical Data Document Number: MRF19045 Rev. 8, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF19045LR3 MRF19045LSR3 Designed for PCN and PCS base station applications with frequencies from	Original	MRF19045 MRF19045LR3 MRF19045LSR3 MRF19045LR3 IM3910 400S AN1955 CDR33BX104AKWS MRF19045 MRF19045LSR3 100B471JP200X RM73B2 Arlon	PDF
MRF5S4140H Abstract: No abstract text available Text: Document Number: MRF5S4140H Rev. 0, 1/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S4140HR3 MRF5S4140HSR3 Designed for broadband commercial and industrial applications with frequencies from 400 to 500 MHz. The high gain and broadband performance of these	Original	MRF5S4140H MRF5S4140HR3 MRF5S4140HSR3 28-volt MRF5S4140HR3 MRF5S4140H	PDF
capacitor 10uF/63V Abstract: ds10a capacitor 100uF 50V capacitor 1206 63V hex head screws 10uf 63v capacitor AB-45 banana socket datasheet diode gp 429 SMD 1206 RESISTOR 100 OHMS Text: The innovative Semiconductor Company! HVV0405-175 High Voltage, High Ruggedness UHF Pulsed Power Transistor 400-500 MHz, 300 s Pulse, 10% Duty Cycle For UHF band, Weather and Long Range Radar Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V	Original	HVV0405-175 EG-01-DS10A 429-HVVi capacitor 10uF/63V ds10a capacitor 100uF 50V capacitor 1206 63V hex head screws 10uf 63v capacitor AB-45 banana socket datasheet diode gp 429 SMD 1206 RESISTOR 100 OHMS	PDF
Untitled Abstract: No abstract text available Text: Document Number: MRF19045 Rev. 9, 10/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF19045LR3 MRF19045LSR3 Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier	Original	MRF19045 MRF19045LR3 MRF19045LSR3 MRF19045LR3	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MW6S010 Rev. 0, 4/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier	Original	MW6S010 MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1 MW6S010	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF19045/D SEMICONDUCTOR TECHNICAL DATA MRF19045 MRF19045R3 MRF19045S MRF19045SR3 The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from	Original	MRF19045/D MRF19045 MRF19045R3 MRF19045S MRF19045SR3 MRF19045/D	PDF
MRF5S4140H Abstract: No abstract text available Text: Document Number: MRF5S4140H Rev. 2, 5/2006 Freescale Semiconductor Technical Data N - Channel Enhancement - Mode Lateral MOSFETs MRF5S4140HR3 MRF5S4140HSR3 Designed for broadband commercial and industrial applications with frequencies from 400 to 500 MHz. The high gain and broadband performance of these	Original	MRF5S4140H MRF5S4140HR3 MRF5S4140HSR3 28-volt MRF5S4140HR3 MRF5S4140H	PDF
22 pf capacitor datasheet Abstract: 100B121JP500X A114 A115 AN1955 C101 JESD22 MRF5S4140HR3 MRF5S4140HSR3 J0743 Text: RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S4140HR3 MRF5S4140HSR3 LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 400 to 500 MHz. The high gain and broadband performance of these	Original	MRF5S4140HR3 MRF5S4140HSR3 28-volt MRF5S4140HR3 MRF5S4140H 22 pf capacitor datasheet 100B121JP500X A114 A115 AN1955 C101 JESD22 MRF5S4140HSR3 J0743	PDF
CRCW12061001F100 Abstract: MW6S010NR1 A114 A115 AN1955 C101 JESD22 MW6S010 MW6S010GMR1 MW6S010GNR1 Text: Freescale Semiconductor Technical Data Document Number: MW6S010 Rev. 1, 5/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier	Original	MW6S010 MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1 CRCW12061001F100 A114 A115 AN1955 C101 JESD22 MW6S010 MW6S010GMR1	PDF
j0810 Abstract: J0743 j0249 100b1r5jp500x J0313 Text: Document Number: MRF5S4140H Rev. 2, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF5S4140HR3 MRF5S4140HSR3 Designed for broadband commercial and industrial applications with frequencies from 400 to 500 MHz. The high gain and broadband performance of	Original	MRF5S4140H 28--volt IS--95 MRF5S4140HR3 MRF5S4140HSR3 MRF5S4140H j0810 J0743 j0249 100b1r5jp500x J0313	PDF

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Kyocera AVX Components 100B240JP500XT

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100B240JP500X Datasheets Context Search

C8450

100B471JP200X

FERRITE BEAD 1000 OHM 0805

UHF TRANSISTOR

J0743

Untitled

Untitled

2a258 transistor

MW6S010NR1

400S

6 pin mosfet Z2

Untitled

400S

FERRITE BEAD 1000 OHM 0805

IM3910

MRF5S4140H

capacitor 10uF/63V

Untitled

Untitled

Untitled

MRF5S4140H

22 pf capacitor datasheet

CRCW12061001F100

j0810