8237 diode
Abstract: marking VA EC2C03C 82371
Text: EC2C03C Ordering number : ENN8237 Diffused Junction Type Silicon Diode EC2C03C Variable Capacitance Diode for UHF Band VCO Applications • 0.8 to 1.9GHz band VCO applications. Features • • Low series resistance. rs=0.55Ω typ. Ultraminiature 1008size and (0.6mm) leadless package.
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EC2C03C
ENN8237
1008size)
8237 diode
marking VA
EC2C03C
82371
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SMDCHGR0805
Abstract: No abstract text available
Text: SMDCHGR0805SQ/1008SQ SERIES MINIATURE SMD CHIP INDUCTORS Applications : 炽For high-frequency applications including mobile Phones, portable phones, such as PA, ANT, VCD SAW,etc. 炽Mobile phones such as GSM, CDMA, PDC, etc. RF Coil Type 炽Bluetooth, W-LAN.
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SMDCHGR0805SQ/1008SQ
0805SQ
1008SQ
SMDCHGR0805
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Untitled
Abstract: No abstract text available
Text: MINIATURE SMD CHIP INDUCTORS SMDFSR 0603SDP/1008SDP/1210SDP TYPE Shape and Size : Dimensions are in mm E 0603 ONE COLOR CODING 1008/1210 TREE COLOR CODING Features : Ordering Information : ．Miniature SMD wire wound chip inductors have been designed especially for the need of today's small-sized
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0603SDP/1008SDP/1210SDP
1000uH
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1008S
Abstract: 1008SA
Text: SHIELDED SMD FERRITE WIRE WOUND INDUCTOR AISC-1008S-xxx Pb RoHS Compliant FEATURES: • High Inductance Value & Electrical Strength • Magnetic shielding & excellent thermo stability • High reliability & easy surface mount assembly 2.54 x 2.11 x 2.74mm
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AISC-1008S-xxx
AISC-1008
AISC-1008S-xxx
000pcs/reel
AISC-0805
AISC-1008S
1008S
1008SA
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Untitled
Abstract: No abstract text available
Text: SMDCHGR0805SQ/1008SQ SERIES MINIATURE SMD CHIP INDUCTORS Applications : ．For high-frequency applications including mobile Phones, portable phones, such as PA, ANT, VCD SAW,etc. ．Mobile phones such as GSM, CDMA, PDC, etc. ．Bluetooth, W-LAN. Shape and Dimensions Dimensions are in mm :
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SMDCHGR0805SQ/1008SQ
0805SQ
1008SQ
SMDCHGR1008SQ-4N1
SMDCHGR1008SQ-10N
SMDCHGR1008SQ-12N
SMDCHGR1008SQ-18N
SMDCHGR1008SQ-22N
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SMD CODE L01
Abstract: smd color coding smd code 33n
Text: MINIATURE SMD CHIP INDUCTORS SMDCHGR 0805SQ/1008SQ /TYPE Shape and Size : Dimensions are in mm ITEM A max B max C max D H I H 0805 2.4 1.65 1.45 0.65 1.78 1.02 0.76 1008 2.9 2.54 2.03 1.30 2.54 1.02 1.27 Features : Ordering Information : ．Especially high Q factor in this series for customers，design.
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0805SQ/1008SQ
SMDCHGR1008SQ-R10
SMDCHGR1008SQ-R12
SMDCHGR1008SQ-R15
SMDCHGR1008SQ-R22
SMDCHGR1008SQ-R27
SMDCHGR1008SQ-R33
SMDCHGR1008SQ-R39
1008SQ
SMD CODE L01
smd color coding
smd code 33n
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1008s
Abstract: 101M 150M 330M 470M AISC-1008 1008SA
Text: SHIELDED SMD FERRITE WIRE WOUND INDUCTOR AISC-1008S-xxx Pb RoHS Compliant FEATURES: • High Inductance Value & Electrical Strength • Magnetic shielding & excellent thermal stability • High reliability & easy surface mount assembly 2.54 x 2.11 x 2.74mm
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AISC-1008S-xxx
AISC-1008S-xxx
AISC-1008
750pcs/reel
AISC-1008S
1008s
101M
150M
330M
470M
1008SA
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EC2C03C
Abstract: No abstract text available
Text: EC2C03C Ordering number : ENN8237 Diffused Junction Type Silicon Diode EC2C03C Variable Capacitance Diode for UHF Band VCO Applications • 0.8 to 1.9GHz band VCO applications. Features • • Low series resistance. rs=0.55Ω typ. Ultraminiature 1008size and (0.6mm) leadless package.
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EC2C03C
ENN8237
1008size)
EC2C03C
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C-1008SR
Abstract: 1008g 1008-G c1008y C-1008Y A1008G A-1008SR 1008x A-1008E A-1008Y
Text: C/A-1008X ALPHA-NUMERIC DISPLAY Shape Part No. Common Common Cathode Anode Chip Raw Material Emitted Color C-1008E A-1008E GaAsP/GaP Hi.effi Red C-1008G A-1008G GaP C-1008Y A-1008Y GaAsP/GaP Yellow C-1008SR A-1008SR GaAlAs Green Wave Electro-Optical Characteristics
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C/A-1008X
C-1008E
-1008E
C-1008G
-1008G
C-1008Y
-1008Y
C-1008SR
-1008SR
C-1008SR
1008g
1008-G
c1008y
C-1008Y
A1008G
A-1008SR
1008x
A-1008E
A-1008Y
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BR1010
Abstract: BR1010S
Text: BR10005SG thru BR1010SG GLASS PASSIVATED REVERSE VOLTAGE FORWARD CURRENT - BRIDGE RECTIFIERS 50 to 1000Volts 10.0 Amperes BR8 FEATURES ● Surge overload rating -200 amperes peak .296 7.5 .255(6.5) ● Low forward voltage drop ● Small size; simple installation
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BR10005SG
BR1010SG
1000Volts
BR1010
BR1010S
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S7031-0908S
Abstract: S7032
Text: CCD area image sensors S7030/S7031 series Back-thinned FFT-CCD The S7030/S7031 series is a family of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By using the binning operation, the S7030/S7031 series can be used as a linear image sensor having a long aperture
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S7030/S7031
SE-171
KMPD1023E15
S7031-0908S
S7032
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Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR KBPC1000S – KBPC1010S 10A IN-LINE BRIDGE RECTIFIER Data sheet 1297, Rev. Features Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability Ideal for Printed Circuit Boards
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KBPC1000S
KBPC1010S
MIL-STD-202,
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1008SG
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR Data sheet 1425, Rev. A KBPC1000S-G – KBPC1010S-G 10A IN-LINE BRIDGE RECTIFIER Green Products Features Diffused Junction
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KBPC1000S-G
KBPC1010S-G
1008SG
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detector c band
Abstract: S7030 S7030-0906 S7030-0907 S7030-1006 S7030-1007 S7030-1008 S7031 CCD Linear Image Sensor
Text: CCD area image sensors S7030/S7031 series Back-thinned FFT-CCD The S7030/S7031 series is a family of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By using the binning operation, the S7030/S7031 series can be used as a linear image sensor having a long aperture
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S7030/S7031
SE-171
KMPD1023E16
detector c band
S7030
S7030-0906
S7030-0907
S7030-1006
S7030-1007
S7030-1008
S7031
CCD Linear Image Sensor
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Untitled
Abstract: No abstract text available
Text: PB1000S – PB1010S 10A SINGLE PHASE BRIDGE RECTIFIER WON-TOP ELECTRONICS Pb Features Diffused Junction High Current Capability High Case Dielectric Strength High Surge Current Capability Ideal for Printed Circuit Board Application
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PB1000S
PB1010S
E157705
MIL-STD-202,
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1008SA
Abstract: No abstract text available
Text: 1008SA TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit 1008SA High-side Power Switch for Motors, Solenoids, and Lamp Drivers The 1008SA is a monolithic power IC for high-side switches. The IC has a vertical MOS FET output which can be directly driven from a CMOS
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TPD1008SA
TPD1008SA
1008SA
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10005S
Abstract: 1006S GBPC1010S
Text: GBPC10005S THRU GBPC1010S Glass Passivated Bridge Rectifier YENYO Voltage Range 50 to 1000 V Current 10.0 Ampere Features ¬ Plastic package has Underwriters GBPC-S Laboratory Flammability Classification 94V-0 Metal Heat Sink ¬ High surge current capability
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GBPC10005S
GBPC1010S
MIL-STD-202,
300uS
DBE43,
MAR-04
10005S
1006S
GBPC1010S
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BR10S
Abstract: 10005S 1006S
Text: BR10S SERIES REVERSE VOLTAGE FORWARD CURRENT SILICON BRIDGE RECTIFIERS - 50 to 1000Volts 10.0 Amperes BR8 FEATURES ● Surge overload rating -240 amperes peak .296 7.5 .255(6.5) ● Low forward voltage drop ● Small size; simple installation ● Sliver plated copper leads
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BR10S
1000Volts
10005S
1006S
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spw 080
Abstract: LEM3225 CL-2M2012-900JT TKS 0603 FBM3216HS800-T ACB2012M-150-T LAL04TB 494LYF FBM2125HS420-T m5258
Text: CT Technologies - Cross Reference Competitor Part CTC Part 0402R CT0402CSF 0402CS-P CT0402CSF 0402CS L CT0402CSF 0402CS CT0402CSF 0402 CT0402CSF 555-0402 CT0402CSF PE-0402CD CT0402CSF 0402AS CT0402CSF ELJNK CT0402CSF GLZG CT0402CSF KQ0402 CT0402CSF KQT0402L
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0402R
CT0402CSF
0402CS-P
0402CS
spw 080
LEM3225
CL-2M2012-900JT
TKS 0603
FBM3216HS800-T
ACB2012M-150-T
LAL04TB
494LYF
FBM2125HS420-T
m5258
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S7031
Abstract: S7032 S7030 S7030-0906 S7030-0907 S7030-1006 S7030-1007 S7030-1008 S7030-0906N S7031-1007S
Text: IMAGE SENSOR CCDエリアイメージセンサ S7030/S7031シリーズ 裏面入射型FFT-CCD S7030/S7031シリーズは微弱光検出用に開発された計測用FFT-CCDエリアイメージセンサです。ビニング動作を行うこと により、受光面の高さ方向に長いリニアイメージセンサとして使用できるため、分光光度計の検出器に適しています。ビニ
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S7030/S7031
S7030/S7031FFT-CCD
S7030/S703124
S7030
S7031
S7030-0906
S7030-0907
S7030-0908
S7030-1006
S7031
S7032
S7030
S7030-0906
S7030-0907
S7030-1006
S7030-1007
S7030-1008
S7030-0906N
S7031-1007S
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BR10G
Abstract: No abstract text available
Text: BR10SG SERIES GLASS PASSIVATED REVERSE VOLTAGE FORWARD CURRENT BRIDGE RECTIFIERS - 50 to 1000Volts 10.0 Amperes BR8 FEATURES ● Surge overload rating -200 amperes peak .296 7.5 .255(6.5) ● Low forward voltage drop ● Small size; simple installation ● Sliver plated copper leads
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BR10SG
1000Volts
BR10G
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0821
Abstract: No abstract text available
Text: TOSHIBA 1008SA TOSHIBA INTELLIGENT PO W ER DEVICE SILICON MONOLITHIC PO W ER MOS INTEGRATED CIRCUIT T P D 1008S A HIGH-SIDE POWER SWITCH for MOTORS, SOLENOIDS, and LAMP DRIVERS 1008SA is a monolithic power IC for high-side switches. The IC has a vertical MOS FET output which can
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TPD1008SA
1008S
TPD1008SA
SSIP5-P-1-70C
0821
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U 821 B
Abstract: 1008U
Text: ç//ffpp/priç Ëmü'âÆÆJC ^7 ^7 Wa axial leaded a t « g M ^ E jB H J M lg g g g g M L M n SSL-LXA1008XC-TR41 Transfer Molded J 1.40 [0.055] - — C» f 200 [0.079] 4 r 0.50 [0.020] 0.40 [0.016] - 1 Z-Bend Axial Leads 2 4 7 [0.097] Features/Options
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SSL-LXA1008XC-TR41
SSL-LXA10Q8
1008U
U 821 B
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2n3817
Abstract: 2N3804 2N3800 2N3802 2N3812 2n3816 raytheon emitter pad 2N381 2N4942 raytheon npn
Text: RAYTHEON/ SEMICONDUCTOR T4 7597360 RAYTHEON. ^AYTUFnin RAYTHEON J 0005557 S E M IC O N D U C T O R 94D 05527 Low Level, Low Noise D j - z - f - Z ' l H j g h G a j n A m p | j f ¡e r s Popular Types Description G eneral purpose a m p lifier for low level, low noise and high gain amplifier
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75T73fc
2604/JA
2605/JA
54BSC
O-116)
14-Lead
100BSC
2n3817
2N3804
2N3800
2N3802
2N3812
2n3816
raytheon emitter pad
2N381
2N4942
raytheon npn
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