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    Microchip Technology Inc APT1001RBN

    MOSFET N-CH 1000V 11A TO247AD
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    Microchip Technology Inc APT1001RBNRG

    POWER MOSFET TRANSISTOR
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    Richardson RFPD APT1001RBNRG 1
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    Microchip Technology Inc APT1001RBNG

    POWER MOSFET TRANSISTOR
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    Richardson RFPD APT1001RBNG 1
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    APT901RBN

    Abstract: APT1001RBN 1001RBN APT5030BN
    Text: D TO-247 G 1001RBN 1000V 11.0A 1.00Ω S POWER MOS IV 21.0A 0.30Ω APT5030BN 500V N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage


    Original     		PDF O-247 APT1001RBN APT5030BN 1001RBN O-247AD APT901RBN 1001RBN

    1001RBN

    Abstract: 1001R3BN 1001rb APT1001R3BN APT1001R1BN
    Text: D TO-247 G APT1001R1BN 1000V 10.5A 1.10Ω S POWER MOS IV APT1001R3BN 1000V 10.0A 1.30Ω N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage


    Original     		PDF O-247 APT1001R1BN APT1001R3BN 1001RBN 1001R3BN O-247AD 1001RBN 1001R3BN 1001rb

    1001RBN

    Abstract: No abstract text available
    Text: ADVANCED P ow er Te c h n o l o g y 1001RBN 1000V 11.0A 1.00Í2 POWER MOS IV N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified. Parameter Drain-Source Voltage APT 1001RBN


    OCR Scan     		PDF APT1001RBN 1001RBN APT1001RBN O-247AD 1001RBN

    Untitled

    Abstract: No abstract text available
    Text: ADVANCED P ow er Te c h n o l o g y ' OD APT1001R1BN 1000V 10.5A 1.1 Oil OS APT1001R3BN 1000V 10.0A 1.30Í2 POWER MOS IV N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS b All Ratings: Tc = 25°C unless otherwise specified.


    OCR Scan     		PDF APT1001R1BN APT1001R3BN 1001RBN 1001R3BN 150VOLTAGE APT1001R1/1001R3BN O-247AD