1001RBN
Abstract: 1001R3BN 1001rb APT1001R3BN APT1001R1BN
Text: D TO-247 G APT1001R1BN 1000V 10.5A 1.10Ω S POWER MOS IV 1001R3BN 1000V 10.0A 1.30Ω N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage
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O-247
APT1001R1BN
APT1001R3BN
1001RBN
1001R3BN
O-247AD
1001RBN
1001R3BN
1001rb
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1001r1bn
Abstract: 130Q APT1001R3BN diode 1000V
Text: ADVANCED PO W ER Te c h n o lo g y O D O S POWER MOS IV® APT1001R1BN APT901R1BN 1001R3BN APT901R3BN 1000V 900V 1000V 900V 10.5A 10.5A 10.0A 10.0A 1.100 1.10Q 1.30Q 1.300 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: T „ = 25°C unless otherwise specified.
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APT1001R1BN
APT901R1BN
APT1001R3BN
APT901R3BN
901R1BN
1001R1BN
901R3BN
1001R3BN
O-247AD
130Q
diode 1000V
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Untitled
Abstract: No abstract text available
Text: O A dvanced P o w er Te c h n o lo g y D APT1001R1BN 1000V 10.5A 1.10Í2 APT901R1BN 900V 10.5A 1.10D 1001R3BN 1000V 10.0A 1.30Q APT901R3BN 900V 10.0A 1.30Q O S POWER MOS IV N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.
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APT1001R1BN
APT901R1BN
APT1001R3BN
APT901R3BN
901R1BN
1001R1BN
901R3BN
1001R3BN
APT1001R1/901R1/1001R3/901R3BN
O-247AD
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APT901R3BN
Abstract: APT1001R3BN
Text: O D Ô s A d van ced P o w er Te c h n o l o g y GIí'WtH MOS iUä APT1001R1BN APT901R1BN 1001R3BN APT901R3BN 1000V 900V 1000V 900V 10.5A 10.5A 10.0 A 10.0A 1.100 1.100 1.300 1.300 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS
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APT1001R1BN
APT901R1BN
APT1001R3BN
APT901R3BN
901R1BN
/1001R3BN
O-247AD
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Untitled
Abstract: No abstract text available
Text: ADVANCED P ow er Te c h n o l o g y ' OD APT1001R1BN 1000V 10.5A 1.1 Oil OS 1001R3BN 1000V 10.0A 1.30Í2 POWER MOS IV N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS b All Ratings: Tc = 25°C unless otherwise specified.
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APT1001R1BN
APT1001R3BN
1001RBN
1001R3BN
150VOLTAGE
APT1001R1/1001R3BN
O-247AD
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SML1001R1BN
Abstract: APT901R1BN 1001R1BN SML1001R3BN SML901R1BN SML901R3BN APT901R
Text: SEMELAB t>OE PLC - 01 3 3 1 0 7 O O O O b ü O 73S « S m B D MOS POWER 4 SML1001R1BN 1000V 10.5A 1.1 OQ SML901R1BN 900V 10.5A 1.1 OQ 1001R3BN 1000V 10.0A 1.3012 SML901R3BN 900V 10.0A 1.3012 SEME LAB N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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SML1001R1BN
SML901R1BN
SML1001R3BN
SML901R3BN
901R1BN
1001R1
901R3BN
1001R3BN
O-247AD
APT901R1BN
1001R1BN
APT901R
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APT1001R1BN
Abstract: APT901R1BN 1001R3BN 1001r1bn
Text: A d v a n ced ROW ER Te c h n o l o g y o D O S POWER MOS IV< APT1001R1BN APT901R1BN 1001R3BN APT901R3BN 1000V 900V 1000V 900V 10.5 A 10.5 A 10.0A 10.0 A 1.10Q 1.10Q 1.3012 1.30Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: T c = 25°C unless otherwise specified.
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APT1001R1BN
APT901R1BN
APT1001R3BN
APT901R3BN
901R1BN
1001R1
901R3BN
1001R3BN
100mS
APT10
1001r1bn
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