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    Text: 1001PGB200E Thyristors Gate Turn Off Thyristor GTO V(DRM) Max. (V)2.0k V(RRM) Max. (V)18 I(T) Rated Maximum (A)550² @Temp. (øC) (Test Condition) I(TSM) Max. (A)6.5k @ t(w) (s) (Test Condition) I(GT) Max. (A)2.0 V(GT) Max.(V)1.0 I(H) Max. (A) Holding Current25Â


    Original     		PDF 1001PGB200E Current25Ã Current30m StyleTO-200var58W Code4-41