DDS-101-010
Abstract: ELS-1001EWA DDS101
Text: EVERLIGHT ELECTRONICS CO.,LTD. Device Number : DDS-101-010 REV: 1.0 Page: 1/4 1.0" Single Digit Display ELS-1001EWA MODEL NO : █ Features : ECN : █ Package Dimension: ● Industrial Standard Size. ● Low Power Consumption. ● Categorized For Luminous Intensity.
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DDS-101-010
ELS-1001EWA
ELS-1001
30min
E109-S1001EWA
DDS-101-010
ELS-1001EWA
DDS101
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KAF-1001
Abstract: No abstract text available
Text: DEVICE PERFORMANCE SPECIFICATION Revision 3.0 MTD/PS-0195 April 18, 2008 KODAK KAF-1001E IMAGE SENSOR 1024 H X 1024 (V) FULL-FRAME CCD IMAGE SENSOR TABLE OF CONTENTS Summary Specification . 4
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MTD/PS-0195
KAF-1001E
450ke
500ke.
MTD/PS-0666
KAF-1001
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ELB-1001EWA
Abstract: No abstract text available
Text: EVERLIGHT ELECTRONICS CO.,LTD. DDB-100-029 Device Number : REV: 1.1 Page: 1/5 10 Bar Graph Displays MODEL NO : ELB-1001EWA ECN : █ Features : █ Applications: ● Industrial standard size. ● Audio equipment ● Low power consumption. ● Instrument panels
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DDB-100-029
ELB-1001EWA
ELB-1001
30min
ELB-1001EWA
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ELB-1001EWA
Abstract: 100033
Text: EVERLIGHT ELECTRONICS CO.,LTD. Technical Data Sheet 10 Bar Graph Displays ELB-1001EWA █ Features : ● Industrial standard size. ● Low power consumption. ● Categorized for luminous intensity. ● Pb free █ Descriptions : ● The ELB-1001 series are ten-element
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ELB-1001EWA
ELB-1001
30min
CDDB-100-033
ELB-1001EWA
100033
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KAF-1401E
Abstract: kodak ccd kaf-140
Text: KAF-1001E Performance Specification KAF - 1001E 1024 H x 1024(V) Pixel Enhanced Response Full-Frame CCD Image Sensor Performance Specification Eastman Kodak Company Image Sensor Solutions Rochester, New York 14650 Revision 2.0 March 19, 2004 Eastman Kodak Company - Image Sensor Solutions
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KAF-1001E
1001E
450ke
500ke.
KAF-1401E
kodak ccd
kaf-140
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KAF-1001E
Abstract: KAF-1401E kaf-140 kodak ccd
Text: KAF-1001E Performance Specification KAF - 1001E 1024 H x 1024(V) Pixel Enhanced Response Full-Frame CCD Image Sensor Performance Specification Eastman Kodak Company Image Sensor Solutions Rochester, New York 14650 Revision 1 February 19, 2001 Eastman Kodak Company – Image Sensor Solutions - Rochester, NY 14650-2010
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KAF-1001E
1001E
450ke
500ke.
KAF-1001E
KAF-1401E
kaf-140
kodak ccd
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Untitled
Abstract: No abstract text available
Text: HEMT-3301/HEMT-1001 940 nm High Radiant Emitters Datasheet Description Features The HEMT-3301 and HEMT-1001are infrared emitters, using amesa structure GaAs on GaAsinfrared diode, IRED, optimizedfor maximum quantum efficiencyat a peak wavelength of 940 nm.The HEMT-3301 and HEMT-1001emitters
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HEMT-3301/HEMT-1001
HEMT-3301
HEMT-1001are
HEMT-1001emitters
HEMT-3301.
HEMT-1001.
AV02-0912EN
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KAF-1001E
Abstract: KEK-4H0080-KAF-1001-12-5 4H0080 ccd 1024 kaf-1401E
Text: DEVICE PERFORMANCE SPECIFICATION Revision 5.0 MTD/PS-0195 April 14, 2010 KODAK KAF-1001E IMAGE SENSOR 1024 H X 1024 (V) FULL-FRAME CCD COLOR IMAGE SENSOR TABLE OF CONTENTS Summary Specification . 4
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MTD/PS-0195
KAF-1001E
MTD/PS-0195
KEK-4H0080-KAF-1001-12-5
4H0080
ccd 1024
kaf-1401E
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KAF-1001E
Abstract: microlens KODAK 1001-AAA-CP-B1 KAF-1001-AAA kodak ccd um 11-UV 4H0080
Text: PRODUCT SUMMARY KODAK KAF-1001E IMAGE SENSOR 1024 H X 1024 (V) FULL FRAME CCD IMAGE SENSOR DESCRIPTION The KODAK KAF-1001 Image Sensor is a highperformance, silicon charge-coupled device (CCD) designed for a wide range of image sensing applications in the 400 nm to 1100 nm wavelength band. Common
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KAF-1001E
KAF-1001
400nm,
KAF-1001-AAA
MTD/PS-0892)
microlens
KODAK
1001-AAA-CP-B1
KAF-1001-AAA
kodak ccd um
11-UV
4H0080
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KFG2G16Q2A
Abstract: 0307h 0719h 63FBGA KFG2G16 onenand oneNand flash
Text: OneNAND2G KFG2G16Q2A-DEBx OneNAND4G(KFH4G16Q2A-DEBx) FLASH MEMORY KFG2G16Q2A KFH4G16Q2A 2Gb OneNAND A-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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KFG2G16Q2A-DEBx)
KFH4G16Q2A-DEBx)
KFG2G16Q2A
KFH4G16Q2A
80x11
KFG2G16Q2A)
KFH4G16Q2A)
KFG2G16Q2A
0307h
0719h
63FBGA
KFG2G16
onenand
oneNand flash
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63FBGA
Abstract: KFG1G16Q2B onenand
Text: OneNAND1Gb KFG1G16Q2B-DEBx FLASH MEMORY KFG1G16Q2B 1Gb OneNAND B-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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KFG1G16Q2B-DEBx)
KFG1G16Q2B
80x11
KFG1G16x2B)
63FBGA
KFG1G16Q2B
onenand
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OR3LP26B
Abstract: OR3T20 ORT8850 7ba2 diode pb7d
Text: Preliminary Data Sheet April 2001 PayloadPlus /APC UTOPIA Slave Bridge Introduction Features The PayloadPlus/ATM port controller APC universal test and operations PHY interface for ATM (UTOPIA) slave bridge, also known as the PayloadPlus APC wedge (PAW) or the Atlanta™ interface
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OR3T20
DS01-212NCIP
OR3LP26B
ORT8850
7ba2
diode pb7d
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Untitled
Abstract: No abstract text available
Text: OneNAND256 KFG5616x1A-xxB6 FLASH MEMORY OneNANDTM Specification Density 256Mb Part No. VCC(core & IO) Temperature PKG KFG5616Q1A-DEB6 1.8V(1.7V~1.95V) Extended 67FBGA(LF) KFG5616Q1A-PEB6 1.8V(1.7V~1.95V) Extended 48TSOP1 KFG5616D1A-DEB6 2.65V(2.4V~2.9V) Extended
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OneNAND256
KFG5616x1A-xxB6)
KFG5616Q1A-DEB6
67FBGA
KFG5616Q1A-PEB6
256Mb
48TSOP1
KFG5616D1A-DEB6
KFG5616D1A-PEB6
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sr04
Abstract: marking s4 resistor
Text: Precision Resistor Networks SR04 & S4 Series Description The SR04 & S4 Series resistor networks are precision-class metal film components featuring tight resistance tolerance and low values of temperature coefficient of resistance TCR . This resistor network package provides both excellent
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SR04TQ1001/2001YRA
S4QQ50R0/1001EM5-C
50/1K,
SR02M702
sr04
marking s4 resistor
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upD23C1001
Abstract: No abstract text available
Text: ¿/P D 23C 1001E 1 31 ,0 72 x 8 -B IT M A S K -P R O G R A M M A B LE c m o s ro m N E C Electronics Inc. Description Pin Configuration The /1001E is a 131,072-word by 8-bit static ROM fabricated with CMOS silicon-gate technology. Designed to operate from a single -l-5-volt power
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1001E
uPD23C1001E
072-word
600-mil,
32-pin
upD23C1001
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Untitled
Abstract: No abstract text available
Text: TOSHIBA HN2C11FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 2 C 1 1 FU VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS U n it in mm 2.1 + 0.1 • Including Two Devices in U S6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC
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HN2C11FU
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Untitled
Abstract: No abstract text available
Text: 2SA1954 TO SHIBA 2 S A 1 954 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS G ENERAL PURPOSE AMPLIFIER APPLICATIONS SWITCHING AND MUTING SWITCH APPLICATION • Low Saturation Voltage • Large Collector Current VCE (sat) d )= —15mV (Typ.) @ Iq = —10mA/ Iß = —0.5mA
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2SA1954
--15mV
--10mA/
500mA
1001EA
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t 541A
Abstract: No abstract text available
Text: TOSHIBA TC74VH CT540,541 AF/AFW/AFT TOSHIBA CMO S DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74VHCT540AF, TC74VHCT540AFW, TC74VHCT540AFT TC74VHCT541AF, TC74VHCT541AFW, TC74VHCT541AFT OCTAL BUS BUFFER TC74VHCT540AF / AFW / AFT TC74VHCT541 FA / AFW / AFT
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TC74VH
CT540
TC74VHCT540AF,
TC74VHCT540AFW,
TC74VHCT540AFT
TC74VHCT541AF,
TC74VHCT541AFW,
TC74VHCT541AFT
TC74VHCT540AF
TC74VHCT541
t 541A
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SG3000GXH29
Abstract: No abstract text available
Text: TOSHIBA SG3000GXH23G TOSHIBA GATE TURN-OFF THYRISTOR TENTATIVE SG3000GXH23G Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage V d R M = 4500V R.M.S On-State Current iT RMS = 1200A IT G Q M = 3000A Peak Turn-Off Current Critical Rate of Rise of On-State Current : d i/d t = 400A/ /us
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SG3000GXH23G
000V//
--25A,
SG3000GXH29.
SG3000GXH29
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Untitled
Abstract: No abstract text available
Text: T O S H IB A GT40T101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE G T 4 0 T 1 01 HIGH POWER SWITCHING APPLICATIONS. • • • Unit in mm Enhancement-Mode High Speed : tf=0.4/^s Max. (Iq = 40A) Low Saturation : V qe (sat) = 5.0V (Max.) (Iq = 40A)
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GT40T101
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SK2013 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K2 0 1 3 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION Unit in mm 3.2 ± 0 .2 10 ± 0 .3 • High Breakdown Voltage : V j g g = 180V • High Forward Transfer Admittance : |Yfs | = 0 .7 S Typ.)
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2SK2013
2SJ313
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SJ378 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt-M O SV 2SJ 378 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS RELAY DRIVE, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 5.0 ± 0 .2 4V Gate Drive
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2SJ378
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SC2642 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 7 ^ f ? fi J 7 UHF BAND POWER AMPLIFIER APPLICATIONS • U nit in mm O utput Power : Po = 12W Min. (f= 470MHz, V c c = 12.6V, Pi = 3W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL
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2SC2642
470MHz,
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SC5307 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5307 HIGH VOLTAGE SWITCHING APPLICATIONS • High Voltage : V ç;e o = 400V • Low Saturation Voltage : VCE sat - °-4V (Typ.) d c = 20mA, Ig -0 .5 m A ) MAXIMUM RATINGS (Ta = 25°C)
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2SC5307
250mm2X0
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