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    1001E Search Results

    1001E Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    G86104111001EU Amphenol Communications Solutions Board mount - Header Plug - Protect Header 2.0mm Pitch Vertical Dip,1x4Pin,Matte Tin,NY9T,Tail=3.5mm,Latch Type,Color-Black Visit Amphenol Communications Solutions
    7601001EA Texas Instruments Data Selectors/Multiplexers 16-CDIP -55 to 125 Visit Texas Instruments Buy
    LDC1001EPWRQ1 Texas Instruments Automotive, 5V, grade-0, Inductance to Digital Converter 16-TSSOP -40 to 150 Visit Texas Instruments
    SF Impression Pixel

    1001E Price and Stock

    Johanson Technology Inc 0433BM15A0001001E

    RF FILTER BAND PASS 433MHZ 0805
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 0433BM15A0001001E Reel 108,000 4,000
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    Bourns Inc CRT0805-FZ-1001ELF

    RESTHINFILM 0805 1K 1% 125MW TC5
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    DigiKey CRT0805-FZ-1001ELF Cut Tape 15,081 1
    • 1 $0.12
    • 10 $0.064
    • 100 $0.0362
    • 1000 $0.02166
    • 10000 $0.02166
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    CRT0805-FZ-1001ELF Digi-Reel 15,081 1
    • 1 $0.12
    • 10 $0.064
    • 100 $0.0362
    • 1000 $0.02166
    • 10000 $0.02166
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    CRT0805-FZ-1001ELF Reel 10,000 5,000
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    Newark CRT0805-FZ-1001ELF Cut Tape 7,470 10
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    • 10 $0.053
    • 100 $0.028
    • 1000 $0.028
    • 10000 $0.028
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    Avnet Abacus CRT0805-FZ-1001ELF Reel 13 Weeks 10,000
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    Master Electronics CRT0805-FZ-1001ELF 20,000
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    Bourns Inc CRT0603-BY-1001ELF

    RES SMD 1K OHM 0.1% 1/10W 0603
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    DigiKey CRT0603-BY-1001ELF Digi-Reel 12,300 1
    • 1 $0.29
    • 10 $0.163
    • 100 $0.0954
    • 1000 $0.05876
    • 10000 $0.05876
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    CRT0603-BY-1001ELF Cut Tape 12,300 1
    • 1 $0.29
    • 10 $0.163
    • 100 $0.0954
    • 1000 $0.05876
    • 10000 $0.05876
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    CRT0603-BY-1001ELF Reel 10,000 5,000
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    Avnet Americas CRT0603-BY-1001ELF Reel 20,000 10 Weeks 5,000
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    Newark CRT0603-BY-1001ELF Cut Tape 4,823 1
    • 1 $0.084
    • 10 $0.084
    • 100 $0.071
    • 1000 $0.071
    • 10000 $0.071
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    Bristol Electronics CRT0603-BY-1001ELF 5,000
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    TTI CRT0603-BY-1001ELF Reel 5,000 5,000
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    Avnet Abacus CRT0603-BY-1001ELF Reel 13 Weeks 5,000
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    Master Electronics CRT0603-BY-1001ELF 5,000
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    Bourns Inc CHP0603-FX-1001ELF

    RES 1 KOHM 1% 1/3W 0603
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CHP0603-FX-1001ELF Reel 10,000 5,000
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    Avnet Americas CHP0603-FX-1001ELF Ammo Pack 16 Weeks, 3 Days 1
    • 1 $0.333
    • 10 $0.333
    • 100 $0.08
    • 1000 $0.08
    • 10000 $0.08
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    CHP0603-FX-1001ELF 15,000
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    CHP0603-FX-1001ELF Reel 14 Weeks 15,000
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    Newark CHP0603-FX-1001ELF Cut Tape 14,690 1
    • 1 $0.034
    • 10 $0.034
    • 100 $0.034
    • 1000 $0.034
    • 10000 $0.034
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    RS CHP0603-FX-1001ELF Bulk 16 Weeks 15,000
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    Avnet Abacus CHP0603-FX-1001ELF Reel 17 Weeks 15,000
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    Master Electronics CHP0603-FX-1001ELF
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    Bourns Inc CMP2512-FX-1001ELF

    RESHIGHPOWER 2512 1K 1% 1.5W TC1
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CMP2512-FX-1001ELF Digi-Reel 8,064 1
    • 1 $0.57
    • 10 $0.314
    • 100 $0.1941
    • 1000 $0.13518
    • 10000 $0.13518
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    Newark CMP2512-FX-1001ELF Cut Tape 9 10
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    • 10 $0.231
    • 100 $0.192
    • 1000 $0.192
    • 10000 $0.192
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    RS CMP2512-FX-1001ELF Bulk 16 Weeks 4,000
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    TTI CMP2512-FX-1001ELF Reel 4,000
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    Avnet Abacus CMP2512-FX-1001ELF Reel 17 Weeks 4,000
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    Master Electronics CMP2512-FX-1001ELF 8,000
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    1001E Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    DDS-101-010

    Abstract: ELS-1001EWA DDS101
    Text: EVERLIGHT ELECTRONICS CO.,LTD. Device Number : DDS-101-010 REV: 1.0 Page: 1/4 1.0" Single Digit Display ELS-1001EWA MODEL NO : █ Features : ECN : █ Package Dimension: ● Industrial Standard Size. ● Low Power Consumption. ● Categorized For Luminous Intensity.


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    DDS-101-010 ELS-1001EWA ELS-1001 30min E109-S1001EWA DDS-101-010 ELS-1001EWA DDS101 PDF

    KAF-1001

    Abstract: No abstract text available
    Text: DEVICE PERFORMANCE SPECIFICATION Revision 3.0 MTD/PS-0195 April 18, 2008 KODAK KAF-1001E IMAGE SENSOR 1024 H X 1024 (V) FULL-FRAME CCD IMAGE SENSOR TABLE OF CONTENTS Summary Specification . 4


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    MTD/PS-0195 KAF-1001E 450ke 500ke. MTD/PS-0666 KAF-1001 PDF

    ELB-1001EWA

    Abstract: No abstract text available
    Text: EVERLIGHT ELECTRONICS CO.,LTD. DDB-100-029 Device Number : REV: 1.1 Page: 1/5 10 Bar Graph Displays MODEL NO : ELB-1001EWA ECN : █ Features : █ Applications: ● Industrial standard size. ● Audio equipment ● Low power consumption. ● Instrument panels


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    DDB-100-029 ELB-1001EWA ELB-1001 30min ELB-1001EWA PDF

    ELB-1001EWA

    Abstract: 100033
    Text: EVERLIGHT ELECTRONICS CO.,LTD. Technical Data Sheet 10 Bar Graph Displays ELB-1001EWA █ Features : ● Industrial standard size. ● Low power consumption. ● Categorized for luminous intensity. ● Pb free █ Descriptions : ● The ELB-1001 series are ten-element


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    ELB-1001EWA ELB-1001 30min CDDB-100-033 ELB-1001EWA 100033 PDF

    KAF-1401E

    Abstract: kodak ccd kaf-140
    Text: KAF-1001E Performance Specification KAF - 1001E 1024 H x 1024(V) Pixel Enhanced Response Full-Frame CCD Image Sensor Performance Specification Eastman Kodak Company Image Sensor Solutions Rochester, New York 14650 Revision 2.0 March 19, 2004 Eastman Kodak Company - Image Sensor Solutions


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    KAF-1001E 1001E 450ke 500ke. KAF-1401E kodak ccd kaf-140 PDF

    KAF-1001E

    Abstract: KAF-1401E kaf-140 kodak ccd
    Text: KAF-1001E Performance Specification KAF - 1001E 1024 H x 1024(V) Pixel Enhanced Response Full-Frame CCD Image Sensor Performance Specification Eastman Kodak Company Image Sensor Solutions Rochester, New York 14650 Revision 1 February 19, 2001 Eastman Kodak Company – Image Sensor Solutions - Rochester, NY 14650-2010


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    KAF-1001E 1001E 450ke 500ke. KAF-1001E KAF-1401E kaf-140 kodak ccd PDF

    Untitled

    Abstract: No abstract text available
    Text: HEMT-3301/HEMT-1001 940 nm High Radiant Emitters Datasheet Description Features The HEMT-3301 and HEMT-1001are infrared emitters, using amesa structure GaAs on GaAsinfrared diode, IRED, optimizedfor maximum quantum efficiencyat a peak wavelength of 940 nm.The HEMT-3301 and HEMT-1001emitters


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    HEMT-3301/HEMT-1001 HEMT-3301 HEMT-1001are HEMT-1001emitters HEMT-3301. HEMT-1001. AV02-0912EN PDF

    KAF-1001E

    Abstract: KEK-4H0080-KAF-1001-12-5 4H0080 ccd 1024 kaf-1401E
    Text: DEVICE PERFORMANCE SPECIFICATION Revision 5.0 MTD/PS-0195 April 14, 2010 KODAK KAF-1001E IMAGE SENSOR 1024 H X 1024 (V) FULL-FRAME CCD COLOR IMAGE SENSOR TABLE OF CONTENTS Summary Specification . 4


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    MTD/PS-0195 KAF-1001E MTD/PS-0195 KEK-4H0080-KAF-1001-12-5 4H0080 ccd 1024 kaf-1401E PDF

    KAF-1001E

    Abstract: microlens KODAK 1001-AAA-CP-B1 KAF-1001-AAA kodak ccd um 11-UV 4H0080
    Text: PRODUCT SUMMARY KODAK KAF-1001E IMAGE SENSOR 1024 H X 1024 (V) FULL FRAME CCD IMAGE SENSOR DESCRIPTION The KODAK KAF-1001 Image Sensor is a highperformance, silicon charge-coupled device (CCD) designed for a wide range of image sensing applications in the 400 nm to 1100 nm wavelength band. Common


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    KAF-1001E KAF-1001 400nm, KAF-1001-AAA MTD/PS-0892) microlens KODAK 1001-AAA-CP-B1 KAF-1001-AAA kodak ccd um 11-UV 4H0080 PDF

    KFG2G16Q2A

    Abstract: 0307h 0719h 63FBGA KFG2G16 onenand oneNand flash
    Text: OneNAND2G KFG2G16Q2A-DEBx OneNAND4G(KFH4G16Q2A-DEBx) FLASH MEMORY KFG2G16Q2A KFH4G16Q2A 2Gb OneNAND A-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


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    KFG2G16Q2A-DEBx) KFH4G16Q2A-DEBx) KFG2G16Q2A KFH4G16Q2A 80x11 KFG2G16Q2A) KFH4G16Q2A) KFG2G16Q2A 0307h 0719h 63FBGA KFG2G16 onenand oneNand flash PDF

    63FBGA

    Abstract: KFG1G16Q2B onenand
    Text: OneNAND1Gb KFG1G16Q2B-DEBx FLASH MEMORY KFG1G16Q2B 1Gb OneNAND B-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


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    KFG1G16Q2B-DEBx) KFG1G16Q2B 80x11 KFG1G16x2B) 63FBGA KFG1G16Q2B onenand PDF

    OR3LP26B

    Abstract: OR3T20 ORT8850 7ba2 diode pb7d
    Text: Preliminary Data Sheet April 2001 PayloadPlus /APC UTOPIA Slave Bridge Introduction Features The PayloadPlus/ATM port controller APC universal test and operations PHY interface for ATM (UTOPIA) slave bridge, also known as the PayloadPlus APC wedge (PAW) or the Atlanta™ interface


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    OR3T20 DS01-212NCIP OR3LP26B ORT8850 7ba2 diode pb7d PDF

    Untitled

    Abstract: No abstract text available
    Text: OneNAND256 KFG5616x1A-xxB6 FLASH MEMORY OneNANDTM Specification Density 256Mb Part No. VCC(core & IO) Temperature PKG KFG5616Q1A-DEB6 1.8V(1.7V~1.95V) Extended 67FBGA(LF) KFG5616Q1A-PEB6 1.8V(1.7V~1.95V) Extended 48TSOP1 KFG5616D1A-DEB6 2.65V(2.4V~2.9V) Extended


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    OneNAND256 KFG5616x1A-xxB6) KFG5616Q1A-DEB6 67FBGA KFG5616Q1A-PEB6 256Mb 48TSOP1 KFG5616D1A-DEB6 KFG5616D1A-PEB6 PDF

    sr04

    Abstract: marking s4 resistor
    Text: Precision Resistor Networks SR04 & S4 Series Description The SR04 & S4 Series resistor networks are precision-class metal film components featuring tight resistance tolerance and low values of temperature coefficient of resistance TCR . This resistor network package provides both excellent


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    SR04TQ1001/2001YRA S4QQ50R0/1001EM5-C 50/1K, SR02M702 sr04 marking s4 resistor PDF

    upD23C1001

    Abstract: No abstract text available
    Text: ¿/P D 23C 1001E 1 31 ,0 72 x 8 -B IT M A S K -P R O G R A M M A B LE c m o s ro m N E C Electronics Inc. Description Pin Configuration The /1001E is a 131,072-word by 8-bit static ROM fabricated with CMOS silicon-gate technology. Designed to operate from a single -l-5-volt power


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    1001E uPD23C1001E 072-word 600-mil, 32-pin upD23C1001 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA HN2C11FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 2 C 1 1 FU VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS U n it in mm 2.1 + 0.1 • Including Two Devices in U S6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


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    HN2C11FU PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA1954 TO SHIBA 2 S A 1 954 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS G ENERAL PURPOSE AMPLIFIER APPLICATIONS SWITCHING AND MUTING SWITCH APPLICATION • Low Saturation Voltage • Large Collector Current VCE (sat) d )= —15mV (Typ.) @ Iq = —10mA/ Iß = —0.5mA


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    2SA1954 --15mV --10mA/ 500mA 1001EA PDF

    t 541A

    Abstract: No abstract text available
    Text: TOSHIBA TC74VH CT540,541 AF/AFW/AFT TOSHIBA CMO S DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74VHCT540AF, TC74VHCT540AFW, TC74VHCT540AFT TC74VHCT541AF, TC74VHCT541AFW, TC74VHCT541AFT OCTAL BUS BUFFER TC74VHCT540AF / AFW / AFT TC74VHCT541 FA / AFW / AFT


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    TC74VH CT540 TC74VHCT540AF, TC74VHCT540AFW, TC74VHCT540AFT TC74VHCT541AF, TC74VHCT541AFW, TC74VHCT541AFT TC74VHCT540AF TC74VHCT541 t 541A PDF

    SG3000GXH29

    Abstract: No abstract text available
    Text: TOSHIBA SG3000GXH23G TOSHIBA GATE TURN-OFF THYRISTOR TENTATIVE SG3000GXH23G Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage V d R M = 4500V R.M.S On-State Current iT RMS = 1200A IT G Q M = 3000A Peak Turn-Off Current Critical Rate of Rise of On-State Current : d i/d t = 400A/ /us


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    SG3000GXH23G 000V// --25A, SG3000GXH29. SG3000GXH29 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A GT40T101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE G T 4 0 T 1 01 HIGH POWER SWITCHING APPLICATIONS. • • • Unit in mm Enhancement-Mode High Speed : tf=0.4/^s Max. (Iq = 40A) Low Saturation : V qe (sat) = 5.0V (Max.) (Iq = 40A)


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    GT40T101 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SK2013 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K2 0 1 3 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION Unit in mm 3.2 ± 0 .2 10 ± 0 .3 • High Breakdown Voltage : V j g g = 180V • High Forward Transfer Admittance : |Yfs | = 0 .7 S Typ.)


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    2SK2013 2SJ313 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SJ378 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt-M O SV 2SJ 378 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS RELAY DRIVE, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 5.0 ± 0 .2 4V Gate Drive


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    2SJ378 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SC2642 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 7 ^ f ? fi J 7 UHF BAND POWER AMPLIFIER APPLICATIONS • U nit in mm O utput Power : Po = 12W Min. (f= 470MHz, V c c = 12.6V, Pi = 3W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL


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    2SC2642 470MHz, PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SC5307 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5307 HIGH VOLTAGE SWITCHING APPLICATIONS • High Voltage : V ç;e o = 400V • Low Saturation Voltage : VCE sat - °-4V (Typ.) d c = 20mA, Ig -0 .5 m A ) MAXIMUM RATINGS (Ta = 25°C)


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    2SC5307 250mm2X0 PDF