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    1001 TRANSISTOR Search Results

    1001 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    1001 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KAF-1001

    Abstract: kaf-140 KAF-1401
    Text: KAF-1001 IMAGE SENSOR 1024 H X 1024 (V) FULL FRAME CCD IMAGE SENSOR JULY 20, 2012 DEVICE PERFORMANCE SPECIFICATION REVISION 1.0 PS-0033 KAF-1001 Image Sensor TABLE OF CONTENTS Summary Specification . 4


    Original     		PDF KAF-1001 PS-0033 PS-0033 kaf-140 KAF-1401

    Untitled

    Abstract: No abstract text available
    Text: KAF-1001 IMAGE SENSOR 1024 H X 1024 (V) FULL FRAME CCD IMAGE SENSOR JUNE 18, 2014 DEVICE PERFORMANCE SPECIFICATION REVISION 1.1 PS-0033 KAF-1001 Image Sensor TABLE OF CONTENTS Summary Specification . 4


    Original     		PDF KAF-1001 PS-0033 PS-0033

    Untitled

    Abstract: No abstract text available
    Text: H Avantek Products Thin-Film Cascadable Amplifier 5 to 1000 MHz Technical Data UTO/UTC 1001 Series Features Description Pin Configuration • Frequency Range: 5 to 1000␣MHz The 1001 Series is a thin-film bipolar RF amplifier that uses resistive feedback and active bias


    Original     		PDF 1000MHz 5963-2458E

    utc 1018

    Abstract: hp2 800 232 509R
    Text: Thin-Film Cascadable Amplifier 5 to 1000 MHz Technical Data UTO/UTC 1001 Series Features Description Pin Configuration • Frequency Range: 5 to 1000 MHz The 1001 Series is a thin-film bipolar RF amplifier that uses resistive feedback and active bias to provide a stable, reliable gain


    Original     		PDF

    test circuits for Mosfet capacitance

    Abstract: pulse transformer fet 100C AN-1001 how to test mosfet A More Realistic Characterization of Power MOSFET Output Capacitance Coss
    Text: Application Note AN-1001 A More Realistic Characterization of Power MOSFET Output Capacitance Coss Table of Contents 1. Introduction . 1 Power MOSFETs and switching frequency . 1


    Original     		PDF AN-1001 test circuits for Mosfet capacitance pulse transformer fet 100C AN-1001 how to test mosfet A More Realistic Characterization of Power MOSFET Output Capacitance Coss

    ultrasonic probe ge

    Abstract: GaAs MMIC ESD, Die Attach and Bonding Guidelines GaAs FET chip ultrasonic bond AN-1001 Ultrasonic bubble kulicke Soffa nec microwave
    Text: California Eastern Laboratories AN-1001 APPLICATION NOTE RECOMMENDED HANDLING PROCEDURES FOR MICROWAVE TRANSISTOR AND MMIC CHIPS INTRODUCTION This document is provided to inform users of some of the handling precautions necessary and the assembly processes


    Original     		PDF AN-1001 ultrasonic probe ge GaAs MMIC ESD, Die Attach and Bonding Guidelines GaAs FET chip ultrasonic bond AN-1001 Ultrasonic bubble kulicke Soffa nec microwave

    UPA101

    Abstract: UPA101-104 Transistor Array differential amplifier UPA101B UPA101G UPA102 UPA102G UPA103 UPA104 RF TRANSISTOR NPN MICRO-X
    Text: California Eastern Laboratories AN-SI-1001 APPLICATION NOTE Ultrahigh Frequency Transistor Arrays: UPA101/102/103/104 INTRODUCTION SUMMARY In recent years there has been a rapidly increasing demand for high-frequency amplifiers and high-speed logic devices,


    Original     		PDF AN-SI-1001 UPA101/102/103/104 UPA104 UPA104 UPA104B UPA101 UPA101-104 Transistor Array differential amplifier UPA101B UPA101G UPA102 UPA102G UPA103 RF TRANSISTOR NPN MICRO-X

    MJ1000

    Abstract: MJ1001 ic 901 MJ1000.1001
    Text: SavantIC Semiconductor Product Specification MJ1000/1001 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·DARLINGTON ·High DC current gain ·Complement to type MJ900/901 APPLICATIONS ·For use as output devices in complementary general purpose amplifier applications


    Original     		PDF MJ1000/1001 MJ900/901 MJ1000 MJ1001 MJ1000 MJ1001 ic 901 MJ1000.1001

    MJ1000

    Abstract: MJ900 MJ901 mj1001 ic 901 adc 515 Comset
    Text: COMSET SEMICONDUCTORS MJ900/901/1000/1001 COMPLEMENTARY POWER DARLINGTONS TO-3 The MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and


    Original     		PDF MJ900/901/1000/1001 MJ900, MJ901, MJ1000 MJ1001 MJ900 MJ900 MJ901 ic 901 adc 515 Comset

    ASI1001

    Abstract: ASI10522
    Text: ASI1001 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 1001 is Designed for General Purpose Class C Power Amplifier Applications up to 1500 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 12 dB min.at 1.0 W / 1,000 MHz


    Original     		PDF ASI1001 ASI10522 ASI1001 ASI10522

    Untitled

    Abstract: No abstract text available
    Text: Application Note 1001 How to Control Motor Fan Speed of AM4961 Prepared by Dong Xiang Lian System Engineering Dept. 1. Operating Diagram VPWM Voltage VCC 28% Lowest speed setting voltage Open Thermistor fCP=25kHz (CCP=100pF) VCPH (VCC 30%) VMIN Voltage COSC Output


    Original     		PDF AM4961 25kHz 100pF) 100pF 300mA.

    gefran 200 -2r

    Abstract: gefran 500 controller manual gefran 500 manuale manual gefran 1000 gefran 1101 gefran 800 manual gefran 500 programmazione gefran 500 programming gefran 500 manual gefran 2400
    Text: 1000 / 1001 / 1101 ISO 9001 SOFTWARE 11.x / 12.x cod. 80343 / Edit. 11- 07/01 Italiano TERMOREGOLATORI CONFIGURABILI - Manuale d’uso 2 - User’s Manual 10 - Bedienungsanleitung 18 - Manuel d’Utilisation 26 - Manual de Uso 34 - Manual do Usuário 42 English


    Original     		PDF 96x96mm/3 220Vca. 1N4007 gefran 200 -2r gefran 500 controller manual gefran 500 manuale manual gefran 1000 gefran 1101 gefran 800 manual gefran 500 programmazione gefran 500 programming gefran 500 manual gefran 2400

    hfc4511

    Abstract: HFC4511B HCF4511BE HCF4511BEY 4511B HCC4511BF HCF4511BC1 HCF4511BM1
    Text: HCC/HCF4511B BCD-TO-SEVEN SEGMENT LATCH/DECODER/DRIVER . . . . . . . HIGH-OUTPUT-SOURCING CAPABILITY up to 25 mA INPUT LATCHES FOR BCD CODE STORAGE LAMP TEST AND BLANKING CAPABILITY 7-SEGMENT OUTPUTS BLANKED FOR BCD INPUT CODES > 1001 QUIESCENT CURRENT SPECIFIED TO 20V


    Original     		PDF HCC/HCF4511B 100mA hfc4511 HFC4511B HCF4511BE HCF4511BEY 4511B HCC4511BF HCF4511BC1 HCF4511BM1

    rosemount 118mf

    Abstract: 118MF ROSEMOUNT LT1001 1001 raytheon rosemount 118mf 1000 LT/SG3527A
    Text: LT-1001 Section 4 LT-1001 Series Precision Operational Amplifiers gain characteristics. A patented, proprietary test method which includes digital Vos nulling after packaging as well as at wafer test tight­ ens the distribution of this parameter such that


    OCR Scan     		PDF LT-1001 LT-1001 1N914 rosemount 118mf 118MF ROSEMOUNT LT1001 1001 raytheon rosemount 118mf 1000 LT/SG3527A

    SK 1117

    Abstract: No abstract text available
    Text: 10-1500 MHZ MEDIUM POWER T0-8 CASCADABLE AMPLIFIER HAMP-1001 HAMP-1001 TXV T E C H N IC A L D A T A A P R IL 1985 Features 12.96 0.510 12.44 (0 .490) DIA. ULTRA WIDE 1 dB BANDWIDTH 5-2800 MHz EXCEPTIONAL PHASE LINEARITY 0.5 Degree Deviation from 100 to 1500 MHz


    OCR Scan     		PDF HAMP-1001 HAMP-1001TXV 001b7fi4 SK 1117

    Untitled

    Abstract: No abstract text available
    Text: W haì H E W L E T T f t l f i i PACKARD Avantek Products Thin-Film Cascadable Amplifier 5 to 1000 MHz Technical Data UTO/UTC 1001 Series Features Description Pin Configuration • Frequency Range: 5 to 1000 MHz The 1001 Series is a thin-film bipolar RF amplifier that uses


    OCR Scan     		PDF

    1541, transistor

    Abstract: No abstract text available
    Text: T tiS l HEW LETT m L fim P A C K A R D Avantek Products Thin-Film Cascadable Amplifier 5 to 1000 MHz Technical Data UTO/UTC 1001 Series Features Description Pin Configuration • Frequency Range: 5 to 1000 MHz The 1001 Series is a thin-film bipolar RF amplifier that uses


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N6282,2N6283,2N6284,2N6285,2N6286,2N6287 File Number 1001 HARRIS SEMICOND SECTOR 5 h E J> 4302271 20-Ampere Complementary N-P-N and P-N-P Monolithic Darlington Power Transistors 0040533 TS1 IHAS T -3 3 ~0 / TERMINAL DESIGNATIONS 60-80-100 Volts, 160 Watts


    OCR Scan     		PDF 2N6282 2N6283 2N6284 2N6285 2N6286 2N6287 20-Ampere 2N6282, 2N6283, 2N6284)

    AUDIO CIRCUIT 6283

    Abstract: ic 6283 circuit diagram l 6283 2N6282 RCA 2N6282 d 6283 ic d 6282 ic IC 6283 2N6287 RCA
    Text: 3875081 G E SOLID STATE- 01 inf| 3a7SQfll QOlVaBT b |~ 7- J J - $ 1 _ Darffngton Power Transistors File Number 1001 2N6282, 2N6283, 2N6284, 2N6285, 2N6286, 2N6287 20-Ampere Complementary N-P-N and P-N-P Monolithic Darlington Power Transistors TERMINAL DESIGNATIONS


    OCR Scan     		PDF 2N6282, 2N6283, 2N6284, 2N6285, 2N6286, 2N6287 20-Ampere 2N6284) AUDIO CIRCUIT 6283 ic 6283 circuit diagram l 6283 2N6282 RCA 2N6282 d 6283 ic d 6282 ic IC 6283 2N6287 RCA

    2N6282 RCA

    Abstract: 2N6284 RCA 2N6282 2N6285 RCA 2N6287 RCA 2n6285 2N6287 cs 6-07 amplifier transistor 2N6284 2N6283
    Text: 3875081 G E SOLID STATE- 01 ¿ F § 3fl7S0fll □D172Bci b | File Number 1001 DarlingtonPowerTransi 2N6282, 2N6283, 2N6284, 2N6285, 2N6286, 2N6287 20-Ampere Complementary N-P-N and P-N-P Monolithic


    OCR Scan     		PDF 01723ci 2N6282, 2N6283, 2N6284, 2N6285, 2N6286, 2N6287 20-Ampere 2N6282 RCA 2N6284 RCA 2N6282 2N6285 RCA 2N6287 RCA 2n6285 2N6287 cs 6-07 amplifier transistor 2N6284 2N6283

    700 v power transistor

    Abstract: No abstract text available
    Text: DATA SHEET NEC / SILICON TRANSISTOF 2SD 1001 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTIO N The 2SD1001 is designed for audio frequency power amplifier application, especially in Hybrid Integrated Circuits. F E A TU R E S • World Standard M iniature Package


    OCR Scan     		PDF 2SD1001 2SD1001 2SB800 700 v power transistor

    KTA1001

    Abstract: MARKING 1fe
    Text: SEMICONDUCTOR T E C H N IC A L D A T A KT A 1001 EPITAXIAL PLANAR PNP TRANSISTOR CAMERA STROBO FLASH APPLICATION. HIGH CURRENT APPLICATION. FEATURES • hFE=100~320 VCe=-2V, Ic=-0.5A . • hFE=70(Mm.) (Vce=-2V, IC=-3A). • Low Collector Saturation Voltage.


    OCR Scan     		PDF KTA1001 -75mA) 250mm2 KTA1001 MARKING 1fe

    MJ900

    Abstract: MJ1000 MJ901 3001 pnp MJ1001 MJ3001 B 817 c MJ2500 MJ2501 2N6053
    Text: - , SGS-THOMSON MJ900 901 1 Ë fKl MILifgTF!Hi ili] S MJ1000/1001 COMPLEMENTARY POWER DARLINGTONS lE S C R lP T IO N tie MJ900, MJ901, MJ1000 and MJ1001 are siii:on epitaxial-base transistors in monolithic Darlingon configuration, and are mounted in Jedec TO-3


    OCR Scan     		PDF MJ1000/1001 MJ900, MJ901, MJ1000 MJ1001 MJ900 MJ901 \/lJl001 3001 pnp MJ3001 B 817 c MJ2500 MJ2501 2N6053

    ic 6283 circuit diagram

    Abstract: d 6283 ic l 6283 d 6282 ic 2N6282 IC 6283 2N 6287 N6283
    Text: File Num ber 1001 2N6282, 2N6283, 2N6284, 2N6285, 2N6286, 2N6287 20-Ampere Complementary N-P-N and P-N-P Monolithic Darlington Power Transistors TERMINAL DESIGNATIONS 60-80-100 Volts, 160 Watts Gain of 2400 Typ. at 10 A (2N6282, 2N6283, 2N6284) Gain of 3500 (Typ.) at 10 A (2N6285, 2N6286, 2N6287)


    OCR Scan     		PDF 2N6282, 2N6283, 2N6284, 2N6285, 2N6286, 2N6287 20-Ampere 2N6284) ic 6283 circuit diagram d 6283 ic l 6283 d 6282 ic 2N6282 IC 6283 2N 6287 N6283