Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    1000V 25A MOSFET Search Results

    1000V 25A MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    1000V 25A MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    APT10040B2

    Abstract: No abstract text available
    Text: APT10040B2VFR APT10040LVFR 1000V 25A 0.400W POWER MOS V FREDFET B2VFR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT10040B2VFR APT10040LVFR O-264 O-264 APT10040 O-247 APT10040B2 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT10040B2VR APT10040LVR 1000V 25A 0.400W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT10040B2VR APT10040LVR O-264 O-264 APT10040 O-247 PDF

    050590

    Abstract: APT10040B2 APT10040B2VFR APT10040LVFR
    Text: APT10040B2VFR APT10040LVFR 1000V 25A 0.400W POWER MOS V FREDFET B2VFR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT10040B2VFR APT10040LVFR O-264 O-264 APT10040 FO810 MIL-STD-750 050590 APT10040B2 APT10040B2VFR APT10040LVFR PDF

    96-MH

    Abstract: No abstract text available
    Text: APT10040B2LC APT10040LLC 1000V 25A 0.400W B2LC POWER MOS VITM T-MAX Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss.


    Original     		APT10040B2LC APT10040LLC O-264 O-264 APT10040 O-247 96-MH PDF

    Untitled

    Abstract: No abstract text available
    Text: APT10040B2VR APT10040LVR 1000V 25A 0.400W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT10040B2VR APT10040LVR O-264 O-264 APT10040 O-247 PDF

    050590

    Abstract: APT10040B2VR APT10040LVR
    Text: APT10040B2VR APT10040LVR 1000V 25A 0.400W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT10040B2VR APT10040LVR O-264 O-264 APT10040 O-247 050590 APT10040B2VR APT10040LVR PDF

    Untitled

    Abstract: No abstract text available
    Text: APT10040B2VR APT10040LVR 1000V 25A 0.400W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT10040B2VR APT10040LVR O-264 O-264 APT10040 O-247 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT10040B2VFR APT10040LVFR 1000V 25A 0.400W POWER MOS V FREDFET B2VFR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT10040B2VFR APT10040LVFR O-264 O-264 APT10040 O-247 PDF

    APT10035JFLL

    Abstract: DSA003677
    Text: APT10035JFLL 1000V POWER MOS 7 R 0.350Ω 25A FREDFET S S 27 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		APT10035JFLL OT-227 APT10035JFLL DSA003677 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT10035JLL 1000V R POWER MOS 7 0.350Ω 25A MOSFET S S 27 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		APT10035JLL OT-227 PDF

    APT10035JFLL

    Abstract: No abstract text available
    Text: APT10035JFLL 1000V POWER MOS 7 R 25A FREDFET 0.370Ω S S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		APT10035JFLL OT-227 APT10035JFLL PDF

    Untitled

    Abstract: No abstract text available
    Text: APT10035JFLL 1000V POWER MOS 7 R 0.350Ω 25A FREDFET S S 27 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		APT10035JFLL OT-227 Sym95 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT10035JLL 1000V POWER MOS 7 R 0.350Ω 25A MOSFET S S 27 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		APT10035JLL OT-227 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT10035JFLL 1000V POWER MOS 7 R 25A FREDFET 0.370Ω S S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		APT10035JFLL OT-227 PDF

    APT10035JLL

    Abstract: No abstract text available
    Text: APT10035JLL 25A 0.350 W 1000V POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses


    Original     		APT10035JLL OT-227 oth187) APT10035JLL PDF

    Untitled

    Abstract: No abstract text available
    Text: APT25M100J 1000V, 25A, 0.33Ω Max N-Channel MOSFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original     		APT25M100J E145592 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT25M100J 1000V, 25A, 0.33Ω Max N-Channel MOSFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original     		APT25M100J E145592 APT25M100J OT-227 PDF

    APT25M100J

    Abstract: MIC4452
    Text: APT25M100J 1000V, 25A, 0.33Ω Max N-Channel MOSFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original     		APT25M100J E145592 APT25M100J MIC4452 PDF

    asymmetric flyback

    Abstract: APT25M100J MIC4452
    Text: APT25M100J 1000V, 25A, 0.33Ω Max N-Channel MOSFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original     		APT25M100J E145592 asymmetric flyback APT25M100J MIC4452 PDF

    Untitled

    Abstract: No abstract text available
    Text: APTMC170AM60CT1AG VDSS = 1700V RDSon = 60mΩ max @ Tj = 25°C ID = 53A @ Tc = 25°C Phase leg SiC MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • SiC Power MOSFET


    Original     		APTMC170AM60CT1AG PDF

    MOSFET 1000v 30a

    Abstract: 10A, 100v fast recovery diode OM9027SP1 OM9028SP1 OM9029SP1 OM9030SP1 diode 1000V 10a
    Text: OM9027SP1 OM9029SP1 OM9028SP1 OM9030SP1 UNCOMMITTED POWER MOSFET AND HIGH SPEED RECTIFIER IN 6-PIN PACKAGE 100V Thru 1000V, 4A To 30A Power MOSFET And High Speed Rectifier In One Package FEATURES • • • • • MOSFET And Common Cathode Rectifier In One Package


    Original     		OM9027SP1 OM9029SP1 OM9028SP1 OM9030SP1 OM9027SP1 OM90Surge 300msec, MOSFET 1000v 30a 10A, 100v fast recovery diode OM9029SP1 OM9030SP1 diode 1000V 10a PDF

    Untitled

    Abstract: No abstract text available
    Text: OM9027SP1 OM9029SP1 OM9Q28SP1 QM9030SP1 UNCOMMITTED POWER MOSFET AND HIGH SPEED RECTIFIER IN 6-PIN PACKAGE 10 0 V T h r u 1000V. 4A To 3 0 A P o w e r M O S F E T A n d High S p e e d R ect ifi er In O n e P a c k a g e FEATURES • • • • • M OSFET And Common Cathode Rectifier In One Package


    OCR Scan     		OM9027SP1 OM9029SP1 OM9Q28SP1 QM9030SP1 OM9027 OM9028 OM9029 OM9030 300/jsec, PDF

    POWER MOSFET Rise Time 1000V NS

    Abstract: MOSFET 1000v 30a inverter circuit 200v to 100v mosfet 10a 500v mosfet 400 V 10A OM9027SP1 OM9028SP1 OM9029SP1 OM9030SP1 OM9Q27SP1
    Text: OM9027SP1 OM9029SP1 OM9Q28SP1 OM9030SP1 UNCOMMITTED POWER MOSFET AND HIGH SPEED RECTIFIER IN 6-PIN PACKAGE 100V Thru 1000V, 4A To 30A Power MOSFET And High Speed Rectifier In One Package FEATURES • • • • • M O S F E T And Common Cathode Rectifier In O ne Package


    OCR Scan     		OM9027SP1 OM9029SP1 OM9Q28SP1 OM9030SP1 300/jsec, 100-TYP. 205Crawford 00011b3 POWER MOSFET Rise Time 1000V NS MOSFET 1000v 30a inverter circuit 200v to 100v mosfet 10a 500v mosfet 400 V 10A OM9028SP1 OM9030SP1 OM9Q27SP1 PDF

    Untitled

    Abstract: No abstract text available
    Text: OM9027SP1 OM9029SP1 OM9Q28SP1 OM9030SP1 UNCOMMITTED POWER MOSFET AND HIGH SPEED RECTIFIER IN 6-PIN PACKAGE 100V Thru 1000V, 4A To 30A Power MOSFET And High Speed Rectifier In One Package FEATURES • • • • • MOSFET And Common Cathode Rectifier In One Package


    OCR Scan     		OM9027SP1 OM9029SP1 OM9Q28SP1 OM9030SP1 300/jsec, PDF