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    1000A MOS Search Results

    1000A MOS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    1000A MOS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AC INRUSH CURRENT 1000A LIMITER

    Abstract: KLH Series littelfuse l50s L15S L25S L50S L60S L70S LR29862 UL 248-14
    Text: Next Semiconductor Fuses 150/250/500/600/700 VAC • Very Fast-Acting ■ 1 – 1000 Amperes SPECIFICATIONS Voltage Ratings: L15S: 150 V AC/DC 1 – 60A 150 VAC (70 – 1000A) 100 VDC (70 – 1000A) L25S: 250 V AC/DC (1 – 200A) 250 VAC (225 – 800A) 200 VDC (225 – 800A)


    Original     		PDF VAC/450VDC 700VAC/650VDC E71611 LR29862 001/LHR AC INRUSH CURRENT 1000A LIMITER KLH Series littelfuse l50s L15S L25S L50S L60S L70S LR29862 UL 248-14

    hct mos

    Abstract: HCT-1000K not hct linear date code
    Text: CUSTOMER CUSTOMER CODE PART DESCRIPTION HALL EFFECT CURRENT TRANSDUCER OPEN LOOP HCT 1000A INTERNAL CODE HCT-1000K DATE 21/10/10 EDITION 1 DOCUMENT NAME HCT-1000K_1.doc HCT-1000K HALL EFFECT CURRENT TRANSDUCER OPEN LOOP HCT 1000A NOTES All rights reserved. Passing on of this document, use and communication of contents not permitted without written authorisati on.


    Original     		PDF HCT-1000K HCT-1000K hct mos not hct linear date code

    littelfuse l50s

    Abstract: l13s L15S L25S L50S L60S L70S LR29862 KlA 511 L25S125
    Text: Semiconductor Fuses 150/250/500/600/700 VAC • Very Fast-Acting ■ 1 – 1000 Amperes SPECIFICATIONS Voltage Ratings: L15S: 150 V AC/DC 1 – 60A 150 VAC (70 – 1000A) 100 VDC (70 – 1000A) L25S: 250 V AC/DC (1 – 200A) 250 VAC (225 – 800A) 200 VDC (225 – 800A)


    Original     		PDF VAC/450VDC 700VAC/650VDC E71611 LR29862 littelfuse l50s l13s L15S L25S L50S L60S L70S LR29862 KlA 511 L25S125

    L15S

    Abstract: L25S L50S L60S L70S l13s L15S1000
    Text: Semiconductor Fuses 150/250/500/600/700 VAC • Very Fast-Acting ■ 1 – 1000 Amperes SPECIFICATIONS Voltage Ratings: L15S: 150 V AC/DC 1 – 60A 150 VAC (70 – 1000A) 100 VDC (70 – 1000A) L25S: 250 V AC/DC (1 – 200A) 250 VAC (225 – 800A) 200 VDC (225 – 800A)


    Original     		PDF VAC/450VDC 700VAC/650VDC E71611) LR29862-99) L15S L25S L50S L60S L70S l13s L15S1000

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet ACD-6 TRMS-PRO 1000A Clamp-on Multimeter Simple to operate and well-suited for most basic applications. The TRMS version improves measurement accuracy in noisy electrical environments. No hassle warranty No waiting. No shipping charges. Our commitment to


    Original     		PDF W78mm H40mm MTL-90B, ACF-3000AK VRC-320 877-AMPROBE

    Untitled

    Abstract: No abstract text available
    Text: PT60QHx45 PT60QHx45 Pulse Power Thyristor Switch Preliminary Information Replaces February 2000 version, DS5267-1.3 DS5267-1.4 April 2000 APPLICATIONS ● Pulse Power ● Crowbars ● Ignitron Replacement KEY PARAMETERS 4500V VDRM IT AV 1000A ITSM 22500A


    Original     		PDF PT60QHx45 DS5267-1 2500A 100mA,

    Untitled

    Abstract: No abstract text available
    Text: PT60QHx45 PT60QHx45 Pulse Power Thyristor Switch Preliminary Information Replaces February 2000 version, DS5267-1.3 DS5267-1.4 April 2000 APPLICATIONS ● Pulse Power ● Crowbars ● Ignitron Replacement KEY PARAMETERS 4500V VDRM IT AV 1000A ITSM 22500A


    Original     		PDF PT60QHx45 DS5267-1 2500A 100mA,

    DS5268-1

    Abstract: No abstract text available
    Text: PT60QHx45 PT60QHx45 Medium Voltage High Current Thyristor Switch Preliminary Information Replaces February 2000 version, DS5267-1.3 DS5267-1.4 April 2000 APPLICATIONS ● Pulse Power ● Crowbars ● Ignitron Replacement KEY PARAMETERS 4500V VDRM IT AV 1000A


    Original     		PDF PT60QHx45 DS5267-1 2500A 100mA, DS5268-1

    DS4243-6

    Abstract: DCR1002SF DCR1002SF14
    Text: DCR1002SF DCR1002SF Phase Control Thyristor Advance Information Replaces July 2001 version, DS4243-5.0 DS4243-6.2 November 2002 PACKAGE OUTLINE KEY PARAMETERS VDRM 1400V IT AV 1850A ITSM 32500A dVdt* 1000V/µs dI/dt 1000A/µs *Higher dV/dt selections available


    Original     		PDF DCR1002SF DS4243-5 DS4243-6 2500A DCR1002SF14 100mA. DCR1002SF DCR1002SF14

    Untitled

    Abstract: No abstract text available
    Text: DCR1002SF DCR1002SF Phase Control Thyristor Advance Information Replaces July 2001 version, DS4243-5.0 DS4243-6.2 November 2002 PACKAGE OUTLINE KEY PARAMETERS VDRM 1400V IT AV 1850A ITSM 32500A dVdt* 1000V/µs dI/dt 1000A/µs *Higher dV/dt selections available


    Original     		PDF DCR1002SF DS4243-5 DS4243-6 2500A DCR1002SF14 100mA.

    65c812

    Abstract: asymmetric thyristor DF451 TA449 RC snubber dc motor RC snubber thyristor design AN484 MU86
    Text: TA449.W TA449.W Asymmetric Thyristor Advance Information Replaces March 1998 version, DS4681-4.1 DS4681-5.0 January 2000 KEY PARAMETERS VDRM 1400V IT RMS 400A ITSM 4000A dVdt 1000V/µs dI/dt 1000A/µs tq 10.0µs APPLICATIONS • UPS ■ Induction Heating


    Original     		PDF TA449. DS4681-4 DS4681-5 20kHz TA449 65c812 asymmetric thyristor DF451 RC snubber dc motor RC snubber thyristor design AN484 MU86

    Untitled

    Abstract: No abstract text available
    Text: DCR803SG DCR803SG Phase Control Thyristor Advance Information Supersedes July 2001 version, DS4451-5.0 DS4451-6.0 April 2003 FEATURES KEY PARAMETERS • Double Side Cooling VDRM 1800V IT AV 1045A ITSM 14000A dVdt 1000V/µs dI/dt 1000A/µs ■ High Surge Capability


    Original     		PDF DCR803SG DS4451-5 DS4451-6 4000A DCR803SG18 DCR803SG17 DCR803SG16 DCR803SG15 DCR803SG14

    DG408BP45

    Abstract: No abstract text available
    Text: DG408BP45 DG408BP45 Gate Turn-off Thyristor Replaces March 1998 version, DS4091-2.3 DS4091-3.0 January 2000 APPLICATIONS KEY PARAMETERS 1000A ITCM VDRM 4500V IT AV 320A dVD/dt 1000V/µs diT/dt 300A/µs • Variable speed A.C. motor drive inverters (VSD-AC)


    Original     		PDF DG408BP45 DS4091-2 DS4091-3 DG408BP45

    N mosfet 250v 600A

    Abstract: No abstract text available
    Text: Ihr Spezialist für Mess- und Prüfgeräte Programmable DC Electronic Load MODEL 63200 SERIES Key Features • Power Rating : 2600W, 5200W, 6500W, 10000W, 10400W, 14500W, 15600W ■ Voltage range : 0 ~ 80V/0 ~ 600V/0 ~ 1000V ■ Current range : Up to 1000A


    Original     		PDF 0000W, 0400W, 4500W, 5600W 00V/0 20kHz 63200-E-201408-1000 N mosfet 250v 600A

    DG408BP45

    Abstract: AN4506 AN4839 snubber 1250 MJ2250
    Text: DG408BP45 DG408BP45 Gate Turn-off Thyristor Replaces March 1998 version, DS4091-2.3 DS4091-3.0 January 2000 APPLICATIONS KEY PARAMETERS 1000A ITCM VDRM 4500V 320A IT AV dVD/dt 1000V/µs 300A/µs diT/dt • Variable speed A.C. motor drive inverters (VSD-AC)


    Original     		PDF DG408BP45 DS4091-2 DS4091-3 DG408BP45 AN4506 AN4839 snubber 1250 MJ2250

    DG408BP45

    Abstract: DG408BP
    Text: DG408BP45 DG408BP45 Gate Turn-off Thyristor DS4091-4 July 2014 LN31735 APPLICATIONS KEY PARAMETERS 1000A ITCM VDRM 4500V 320A IT(AV) dVD/dt 1000V/µs 300A/µs diT/dt • Variable speed A.C. motor drive inverters (VSD-AC) ■ Uninterruptable Power Supplies


    Original     		PDF DG408BP45 DS4091-4 LN31735) 000V/Â DG408BP45 DG408BP

    DG406BP25

    Abstract: No abstract text available
    Text: DG406BP25 DG406BP25 Gate Turn-off Thyristor Replaces March 1998 version, DS4090-2.3 DS4090-3.0 January 2000 APPLICATIONS KEY PARAMETERS 1000A ITCM VDRM 2500V IT AV 400A dVD/dt 1000V/µs diT/dt 300A/µs • Variable speed A.C. motor drive inverters (VSD-AC).


    Original     		PDF DG406BP25 DS4090-2 DS4090-3 DG406BP25

    DCR1260F42

    Abstract: DCR1260F40 DCR1020F65
    Text: DCR1260F42 Phase Control Thyristor Preliminary Information DS5966-1 August 2010 LN27373 FEATURES KEY PARAMETERS • Double Side Cooling  High Surge Capability VDRM IT(AV) ITSM dV/dt* dI/dt APPLICATIONS 4200V 1255A 16800A 1500V/µs 1000A/µs * Higher dV/dt selections available


    Original     		PDF DCR1260F42 DS5966-1 LN27373) 6800A DCR1260F40 100mA, DCR1260F42 DCR1260F40 DCR1020F65

    DCR803SG

    Abstract: DCR803SG14 DCR803SG15 DCR803SG16 DCR803SG17 DCR803SG18
    Text: DCR803SG DCR803SG Phase Control Thyristor Advance Information Supersedes July 2001 version, DS4451-5.0 DS4451-6.0 April 2003 FEATURES KEY PARAMETERS • Double Side Cooling VDRM 1800V IT AV 1045A ITSM 14000A dVdt 1000V/µs dI/dt 1000A/µs ■ High Surge Capability


    Original     		PDF DCR803SG DS4451-5 DS4451-6 4000A DCR803SG18 DCR803SG17 DCR803SG16 DCR803SG15 DCR803SG14 DCR803SG DCR803SG14 DCR803SG15 DCR803SG16 DCR803SG17 DCR803SG18

    511000A

    Abstract: M511000A
    Text: O K I semiconductor MSM511000A_ 1,048,576-WORD x 1-BIT DYNAMIC RAM GENERAL DESCRIPTION T he M S M 5 1 1000A is a new generation dynam ic RAM organized as 1,048,576 w o rds x 1 bit. The tech nolog y used to fabricate the M S M 5 1 1000A is O K I's C M O S silicon gate process technology.


    OCR Scan     		PDF MSM511000A_ 576-WORD 576-w MSM511000A» MSM511000A 511000A M511000A

    1000GXHH22

    Abstract: No abstract text available
    Text: 1000GXHH22 TOSHIBA TOSHIBA FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE 1000GXHH22 Unit in mm HIGH SPEED RECTIFIER APPLICATIONS • • • Repetitive Peak Reverse Voltage Average Forward Current Double Side Cooling 2 - 03.5 ± 0.2 : VRRM = 4500V : If A V = 1000a


    OCR Scan     		PDF 1000GXHH22 1000a 1000GXHH22

    1000GXHH23

    Abstract: No abstract text available
    Text: 1000GXHH23 TOSHIBA TOSHIBA FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE 1QGGGXHH23 Unit in mm HIGH SPEED RECTIFIER APPLICATIONS. 2 - 03.5 ± 0.2 • • • Repetitive Peak Reverse Voltage Average Forward Current Double Side Cooling : VRRM = 4500V : Ip AV = 1000A


    OCR Scan     		PDF 1000GXHH23 1QGGGXHH23 1000GXHH23

    BUK456-1000A

    Abstract: BUK456 1000A MOS BUK456-1000B T0220AB
    Text: Philips Components BUK456-1000A BUK456-1000B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode fleld-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		PDF BUK456-1000A BUK456-1000B BUK456 -1000A -1000B T0220AB; M89-1162/RC BUK456-1000A 1000A MOS BUK456-1000B T0220AB

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 1000GXHH23 TOSHIBA FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE 1000GXHH23 Unit in mm HIGH SPEED RECTIFIER APPLICATIONS. 2 -0 3 .5 ±0.2 • • • Repetitive Peak Reverse Voltage Average Forward Current Double Side Cooling : VRRM = 4500V : If AV = 1000A


    OCR Scan     		PDF 1000GXHH23